SIE800DF-T1-E3

SiE800DF Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Low Switching Losses • TrenchFET® Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for Double-Sided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC ID (A)a RDS(on) (Ω) Silicon Limit 0.0072 at VGS = 10 V 90 50 0.0115 at VGS = 4.5 V 73 50 VDS (V) 30 Package Qg (Typ.) Limit 12 nC Package Drawing www.vishay.com/doc?73398 PolarPAK 10 D 9 G 8 S 7 S 6 D 6 7 8 9 10 APPLICATIONS D D 1 G 2 S 3 D S 4 D 5 5 Top View Top surface is connected to pins 1, 5, 6, and 10 S 4 3 G D 2 1 • VRM • DC/DC Conversion: High-Side • Synchronous Rectification D G Bottom View S N-Channel MOSFET For Related Documents Ordering Information: SiE800DF-T1-E3 (Lead (Pb)-free) SiE800DF-T1-GE3 (Lead (Pb)-free and Halogen-free) www.vishay.com/ppg?74414 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy ID IDM TC = 25 °C TA = 25 °C IS L = 0.1 mH IAS EAS Limit 30 ± 20 90 (Silicon Limit) 50a (Package Limit) 50a 20.6b, c 16.5b, c 60 50a 4.3b, c 40 80 104 66 5.2b, c 3.3b, c - 55 to 150 260 Unit V A mJ TC = 25 °C TC = 70 °C PD W Maximum Power Dissipation TA = 25 °C TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range °C Soldering Recommendations (Peak Temperature)d, e Notes: a. Package limited is 50 A. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73199 S11-0212-Rev. G, 14-Feb-11 www.vishay.com 1 SiE800DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter t ≤ 10 s Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain Top)a Steady State Maximum Junction-to-Case (Source)a, c Notes: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 68 °C/W. c. Measured at source pin (on the side of the package). Symbol RthJA RthJC (Drain) RthJC (Source) Typical 20 1 2.8 Maximum 24 1.2 3.4 Unit °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VGS = 0 V, ID = 250 µA 30 Gate-Source Threshold Voltage Gate-Source Leakage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) gfs Ciss Coss Crss Qg Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current a ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 11 A VGS = 4.5 V, ID = 9 A VDS = 15 V, ID = 11 A VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 18.5 A Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDS = 15 V, VGS = 4.5 V, ID = 18.5 A IS ISM VSD trr Qrr ta tb TC = 25 °C f = 1 MHz VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω Pulse Diode Forward Current IS = 10 A Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time Reverse Recovery Rise Time Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. 1.5 V 34.5 - 6.7 2.2 mV/°C 3.0 ± 100 1 10 25 V nA µA A 0.006 0.0095 50 1600 750 120 23 12 5.6 3 1.3 20 15 15 8 15 15 25 10 0.8 45 41 21 24 0.0072 0.0115 Ω S pF 35 18 1.95 30 25 25 15 25 25 40 15 50 60 1.2 70 65 nC Ω ns A V ns nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73199 S11-0212-Rev. G, 14-Feb-11 SiE800DF Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 25 VGS = 10 V thru 5 V 50 20 I D - Drain Current (A) I D - Drain Current (A) 4V 40 30 20 15 10 TC = 125 °C 5 10 25 °C 3V 0 0.0 0.4 0.8 1.2 1.6 - 55 °C 0 1.5 2.0 2.0 VDS - Drain-to-Source Voltage (V) 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.014 2500 0.012 2000 C - Capacitance (pF) RDS(on) - On-Resistance (mΩ) 2.5 VGS = 4.5 V 0.010 0.008 VGS = 10 V Ciss 1500 1000 Coss 500 0.006 Crss 0 0.004 0 10 20 30 40 50 0 60 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 30 1.8 10 ID = 10.8 A ID = 18.5 A 1.6 8 VDS = 15 V 6 VDS = 24 V 4 2 1.4 (Normalized) RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 5 VGS = 10 V VGS = 4.5 V 1.2 1.0 0.8 0 0 5 10 15 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73199 S11-0212-Rev. G, 14-Feb-11 20 25 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 SiE800DF Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.020 RDS(on) - Drain-to-Source On-Resistance (Ω) I S - Source Current (A) 60 TJ = 150 °C 10 TJ = 25 °C 1 0.0 ID = 10.8 A 0.016 0.012 TA = 125 °C 0.008 TA = 25 °C 0.004 0.2 0.4 0.6 0.8 1.0 0 1.2 2 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 3.0 50 2.6 40 ID = 250 µA 2.2 Power (W) VGS(th) (V) 4 1.8 30 20 1.4 1.0 - 50 10 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 100 Limited by RDS(on)* 1 ms ID - Drain Current (A) 10 10 ms 100 ms 1 1s 10 s 0.1 TA = 25 °C Single Pulse 0.01 0.1 1 DC 10 100 VDS - Drain-to-Source Voltage (V) * VDS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73199 S11-0212-Rev. G, 14-Feb-11 SiE800DF Vishay Siliconix 120 120 100 100 Power Dissipation (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 60 40 80 60 40 Package Limited 20 20 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73199 S11-0212-Rev. G, 14-Feb-11 www.vishay.com 5 SiE800DF Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 55 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Source Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73199. www.vishay.com 6 Document Number: 73199 S11-0212-Rev. G, 14-Feb-11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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