SIE806DF-T1-E3

SiE806DF Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen II Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for Double-Sided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through • 100 % Rg and UIS Tested • Compliant to RoHS directive 2002/95/EC ID (A) RDS(on) (Ω)e Silicon Limit 0.0017 at VGS = 10 V 202 60 0.0021 at VGS = 4.5 V 187 60 VDS (V) 30 Package Qg (Typ.) Limit 75 nC Package Drawing www.vishay.com/doc?72945 PolarPAK 10 D 9 G 8 S 7 S 6 D 6 7 8 9 10 APPLICATIONS D D S G D • VRM • DC/DC Conversion: Low-Side • Synchronous Rectification D G D 1 G 2 S S 3 4 Top View D 5 5 4 3 2 1 S Bottom View Top surface is connected to pins 1, 5, 6, and 10 N-Channel MOSFET For Related Documents Ordering Information: SiE806DF-T1-E3 (Lead (Pb)-free) SiE806DF-T1-GE3 (Lead (Pb)-free and Halogen-free) www.vishay.com/ppg?73740 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy ID IDM TC = 25 °C TA = 25 °C IS L = 0.1 mH IAS EAS Limit 30 ± 12 202 (Silicon Limit) 60a (Package Limit) 60a 41.3b, c 33b, c 100 60a 4.3b, c 50 125 125 80 5.2b, c 3.3b, c - 55 to 150 260 Unit V A mJ TC = 25 °C TC = 70 °C PD W Maximum Power Dissipation TA = 25 °C TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range °C Soldering Recommendations (Peak Temperature)d, e Notes: a. Package limited is 60 A. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73740 S09-1337-Rev. B, 13-Jul-09 www.vishay.com 1 SiE806DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter t ≤ 10 s Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain Top) Steady State Maximum Junction-to-Case (Source)a, c Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). Symbol RthJA RthJC (Drain) RthJFC(Source) Typical 20 0.8 2.2 Maximum 24 1 2.7 Unit °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS ΔVDS/TJ ΔVGS(th)/TJ VGS = 0 V, ID = 250 µA 30 Gate-Source Threshold Voltage Gate-Source Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 12 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 25 A VGS = 4.5 V, ID = 25 A VDS = 15 V, ID = 25 A Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge RDS(on) gfs Ciss Coss Crss Qg ID = 250 µA VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 20 A VDS = 15 V, VGS = 4.5 V, ID = 20 A Qgs Gate-Source Charge Qgd Gate-Drain Charge Rg f = 1 MHz Gate Resistance td(on) Turn-On Delay Time VDD = 15 V, RL = 1.5 Ω tr Rise Time td(off) ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time VDD = 15 V, RL = 1.5 Ω tr Rise Time ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω td(off) Turn-Off Delay Time tf Fall Time Drain-Source Body Diode Characteristics TC = 25 °C IS Continuous Source-Drain Diode Current ISM Pulse Diode Forward Currenta IS = 10 A VSD Body Diode Voltage trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C ta Reverse Recovery Fall Time tb Reverse Recovery Rise Time Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. 0.6 V 29 - 5.1 1.3 mV/°C 2 ± 100 1 10 25 V nA µA A 0.0014 0.0017 130 13000 1150 550 165 75 23 9.5 0.9 125 160 85 15 20 50 85 10 0.9 52 55 25 27 0.0017 0.0021 Ω S pF 250 115 1.35 190 240 130 25 30 75 130 15 60 100 1.2 80 105 nC Ω ns A V ns nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73740 S09-1337-Rev. B, 13-Jul-09 SiE806DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 100 VGS = 10 V thru 3 V 16 I D - Drain Current (A) I D - Drain Current (A) 80 60 40 12 TC = 125 °C 8 TC = 25 °C 4 20 VGS = 1 V 0 0.0 0.1 0.2 VGS = 2 V 0.3 0.4 TC = - 55 °C 0 1.0 0.5 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0022 15 000 0.0020 12 000 3.0 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V 0.0018 0.0016 9000 6000 VGS = 10 V 3000 0.0014 Coss Crss 0 0.0012 0 20 40 60 80 0 100 5 10 15 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 30 1.8 VGS = 4.5 V, 10 V ID = 25 A ID = 20 A 1.6 8 6 VDS = 24 V 4 2 1.4 (Normalized) VDS = 15 V RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 20 1.2 1.0 0.8 0 0 30 Document Number: 73740 S09-1337-Rev. B, 13-Jul-09 60 90 120 150 180 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 www.vishay.com 3 SiE806DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0050 TJ = 150 °C RDS(on) - Drain-to-Source On-Resistance (Ω) I S - Source Current (A) 100 TJ = 25 °C 10 1 0.0 0.0040 0.0035 0.0030 0.0025 125 °C 0.0020 25 °C 0.0015 0.0010 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.8 50 1.6 40 ID = 250 µA Power (W) 1.4 VGS(th) (V) ID = 25 A 0.0045 1.2 30 20 1.0 10 0.8 0.6 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 ID - Drain Current (A) 100 Limited by RDS(on)* 1 ms 10 10 ms 100 ms 1 1s TA = 25 °C Single Pulse 0.1 10 s DC BVDSS Limited 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VDS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73740 S09-1337-Rev. B, 13-Jul-09 SiE806DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 140 250 120 Power Dissipation (W) I D - Drain Current (A) 200 150 100 100 80 60 40 50 20 Package Limited 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating, Junction-to-Case 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73740 S09-1337-Rev. B, 13-Jul-09 www.vishay.com 5 SiE806DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = RthJA = 55°C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 t1 t2 10-4 10-3 10-2 4. Surface Mounted 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Source Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73740. www.vishay.com 6 Document Number: 73740 S09-1337-Rev. B, 13-Jul-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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