SiE818DF
www.vishay.com
Vishay Siliconix
N-Channel 75 V (D-S) MOSFET
D
10
S
7
G S
9 8
FEATURES
PolarPAK®
D
6
1
• Ultra low thermal resistance using top-exposed
PolarPAK® package for double-sided cooling
D
S
D
D
G S
D
2 3
1
Top View
• TrenchFET® power MOSFET
5
4
2 3
S
4
• Leadframe-based encapsulated package
- Die not exposed
- Same layout regardless of die size
G
D
5
7
10
6
9 8
Available
• Low Qgd/Qgs ratio helps prevent shoot-through
• 100 % Rg and UIS tested
Bottom View
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Top surface is connected to pins 1, 5, 6, and 10
PRODUCT SUMMARY
VDS (V)
APPLICATIONS
75
RDS(on) max. () at VGS = 10 V
0.0095
• Primary side switch
RDS(on) max. () at VGS = 4.5 V
0.0125
• Half-bridge
Qg typ. (nC)
33
ID (A) a (package limit)
60
ID (A) a (silicon limit)
79
Configuration
D
• Synchronous rectification
G
S
Single
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and halogen-free
PolarPAK
SiE818DF-T1-E3
SiE818DF-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
SYMBOL
LIMIT
VDS
VGS
75
± 20
60 a (package Limit)
79 (silicon Limit)
ID
60 a
TC = 25 °C
Continuous drain current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
16 b, c
TA = 70 °C
12.9 b, c
Pulsed drain current
Continuous source-drain diode current
Single pulse avalanche current
Avalanche energy
Maximum power dissipation
IDM
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IS
IAS
EAS
PD
UNIT
V
A
80
60 a
4.3 b, c
50
125
125
80
5.2 b, c
3.3
mJ
W
b, c
Operating junction and storage temperature range
TJ, Tstg
-55 to +150
°C
Soldering recommendations (peak temperature) d, e
260
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S09-1338-Rev. B, 13-Jul-09
Document Number: 74485
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiE818DF
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
t 10 s
Maximum junction-to-ambient a, b
Maximum junction-to-case (drain top)
Maximum junction-to-case (source) a, c
Steady state
SYMBOL
TYPICAL
MAXIMUM
RthJA
20
24
RthJC (drain)
0.8
1
RthJC (source)
2.2
2.7
UNIT
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board
b. Maximum under steady state conditions is 68 °C/W
c. Measured at source pin (on the side of the package)
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
VDS temperature coefficient
SYMBOL
TEST CONDITIONS
MIN.
VDS
VGS = 0 V, ID = 250 μA
VDS/TJ
VGS(th) temperature coefficient
VGS(th)/TJ
Gate-source threshold voltage
ID = 250 μA
TYP.
MAX.
UNIT
75
-
-
V
-
78
-
-
-7.1
-
mV/°C
VGS(th)
VDS = VGS , ID = 250 μA
1.5
2.1
3
V
Gate-source leakage
IGSS
IDSS
On-state drain current a
ID(on)
25
-
0.0078
0.0103
± 100
1
10
0.0095
0.0125
nA
Zero gate voltage drain current
VDS = 0 V, VGS = ± 20 V
VDS = 75 V, VGS = 0 V
VDS = 75 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 16 A
VGS = 4.5 V, ID = 14 A
-
50
-
S
-
3200
330
170
63
33
11
17
95
50
-
-
0.95
1.5
-
30
150
40
15
15
15
40
10
45
225
60
25
25
25
60
15
ns
-
-
60
-
-
80
Drain-source on-state
resistance a
RDS(on)
Forward transconductance a
gfs
VDS = 20 V, ID = 16 A
Dynamic b
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS = 38 V, VGS = 0 V, f = 1 MHz
VDS = 38 V, VGS = 10 V, ID = 16 A
Total gate charge
Qg
Gate-source charge
Gate-drain charge
Qgs
Qgd
VDS = 38 V, VGS = 4.5 V, ID = 16 A
Rg
f = 1 MHz
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
IS
Pulse diode forward current a
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
VDD = 38 V, RL = 3.8 ,
ID 10 A, VGEN = 4.5 V, Rg = 1
VDD = 38 V, RL = 3.8 ,
ID 10 A, VGEN = 10 V, Rg = 1
TC = 25 °C
IS = 10 A
IF = 10 A, di/dt = 100 A/μs,
TJ = 25 °C
μA
A
pF
nC
A
-
0.8
1.2
V
-
100
150
ns
-
345
520
nC
-
75
-
-
25
-
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S09-1338-Rev. B, 13-Jul-09
Document Number: 74485
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiE818DF
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
80
VGS = 10 V thru 4 V
I D - Drain Current (A)
I D - Drain Current (A)
16
60
40
20
TC = 25 °C
12
TC = 125 °C
8
TC = - 55 °C
4
3V
0
0.0
0.5
1.0
1.5
0
1.5
2.0
2.0
5000
0.011
4000
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.012
VGS = 4.5 V
0.010
0.009
VGS = 10 V
0.007
2000
Coss
Crss
60
80
0
10
20
30
40
50
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
60
2.2
10
ID = 16 A
ID = 16 A
2.0
VGS = 10 V, 4.5 V
8
VDS = 38 V
6
VDS = 60 V
4
1.8
1.6
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
3000
0
40
4.0
Ciss
1000
20
3.5
Transfer Characteristics
Output Characteristics
0
3.0
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
0.008
2.5
1.4
1.2
1.0
0.8
2
0.6
0
0
15
30
45
Qg - Total Gate Charge (nC)
Gate Charge
S09-1338-Rev. B, 13-Jul-09
60
75
0.4
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 74485
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiE818DF
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.030
100
ID = 16 A
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
0.025
TJ = 150 °C
TJ = 25 °C
10
0.020
125 °C
0.015
25 °C
0.010
0.005
0.000
1
0.0
0.2
0.4
0.6
0.8
1.0
2
1.2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.6
50
2.4
ID = 250 µA
40
2.0
30
Power (W)
VGS(th) (V)
2.2
1.8
1.6
20
1.4
10
1.2
1.0
- 50
- 25
0
25
50
75
100
125
0
0.01
150
0.1
TJ - Temperature (°C)
1
10
100
1000
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
100 µs
I D - Drain Current (A)
10
1 ms
10 ms
1
100 ms
TA = 25 °C
Single Pulse
0.1
1s
10 s
BVDSS Limited
0.01
0.01
* VGS
0.1
1
10
DC
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S09-1338-Rev. B, 13-Jul-09
Document Number: 74485
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiE818DF
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
140
100
120
Power Dissipation (W)
I D - Drain Current (A)
80
60
Package Limited
40
100
80
60
40
20
20
0
0
0
25
50
75
100
125
150
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating a
Power Derating, Junction-to-Case
150
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S09-1338-Rev. B, 13-Jul-09
Document Number: 74485
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiE818DF
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 55 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top)
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Single Pulse
0.02
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Source
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74485.
S09-1338-Rev. B, 13-Jul-09
Document Number: 74485
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
POLARPAK™ OPTION L
M4
Product datasheet/information page contain
links to applicable package drawing.
10
9
8
7
6
D
G
S
S
D
M2
M1
M3
D
G
S
1
2
3
S
4
c
D
5
A
(Top View)
b1 H4
H1
7
S
8
S
9
G
b1 H1
10
D
K4
6
D
θ
H3 b2 H2
b3
θ
P1
K3
Z
P1
T5
θ
T3
M3
View A
E
E1
T2
T4
T1
T3
θ
T5
M4
A
b4
K4
A1
K3
P1
b4
P1
K2
K1
D1
D
0.26
b5
S
4
b5
S
3
G
2
D
1
b5
View A
(Bottom View)
0.13
0.25
DETAIL Z
D
5
0.39
A
0.20
0.33
0.58
Document Number: 72945
Revision: 11-Aug-08
www.vishay.com
1
Package Information
Vishay Siliconix
MILLIMETERS
INCHES
DIM
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.75
0.80
0.85
0.030
0.031
0.033
A1
0.00
-
0.05
0.000
-
0.002
b1
0.48
0.58
0.68
0.019
0.023
0.027
b2
0.41
0.51
0.61
0.016
0.020
0.024
b3
2.19
2.29
2.39
0.086
0.090
0.094
b4
0.89
1.04
1.19
0.035
0.041
0.047
b5
0.23
0.33
0.43
0.009
0.013
0.017
c
0.20
0.25
0.30
0.008
0.010
0.012
D
6.00
6.15
6.30
0.236
0.242
0.248
D1
5.74
5.89
6.04
0.226
0.232
0.238
E
5.01
5.16
5.31
0.197
0.203
0.209
E1
4.75
4.90
5.05
0.187
0.193
0.199
H1
0.23
-
-
0.009
-
-
H2
0.45
-
0.56
0.018
-
0.022
H3
0.31
0.41
0.51
0.012
0.016
0.020
H4
0.45
-
0.56
0.018
-
0.022
K1
4.22
4.37
4.52
0.166
0.172
0.178
K2
1.08
1.13
1.18
0.043
0.044
0.046
K3
1.37
-
-
0.054
-
-
K4
0.24
-
-
0.009
-
-
M1
4.30
4.50
4.70
0.169
0.177
0.185
M2
3.43
3.58
3.73
0.135
0.141
0.147
M3
0.22
-
-
0.009
-
-
M4
0.05
-
-
0.002
-
-
P1
0.15
0.20
0.25
0.006
0.008
0.010
T1
3.48
3.64
4.10
0.137
0.143
0.161
T2
0.56
0.76
0.95
0.022
0.030
0.037
T3
1.20
-
-
0.047
-
-
T4
3.90
-
-
0.153
-
-
T5
0
0.18
0.36
0.000
0.007
0.014
θ
0°
10°
12°
0°
10°
12°
ECN: T-08441-Rev. C, 11-Aug-08
DWG: 5946
Notes
Millimeters govern over inches.
www.vishay.com
2
Document Number: 72945
Revision: 11-Aug-08
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PolarPAK® Option L and S
7.300
(0.287)
0.510
(0.020)
0.510
(0.020)
0.410
(0.016)
0.955
(0.038)
0.955
(0.038)
4.520
(0.178)
6.310
(0.248)
0.895
(0.035)
+
0.895
(0.035)
2.290
(0.090)
0.580
(0.023)
0.580
(0.023)
0.510
(0.020)
APPLICATION NOTE
Recommended Minimum for PolarPAK Option L and S
Dimensions in mm/(Inches)
No External Traces within Broken Lines
Dot indicates Gate Pin (Part Marking)
Return to Index
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6
Document Number: 73491
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
1
Document Number: 91000
