SIE822DF-T1-E3

SiE822DF www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET D 10 S 7 G S 9 8 FEATURES PolarPAK® D 6 1 • Ultra low thermal resistance using top-exposed PolarPAK® package for double-sided cooling D S D D G S D 2 3 1 Top View • TrenchFET® power MOSFET 5 4 2 3 S 4 • Leadframe-based encapsulated package - Die not exposed - Same layout regardless of die size G D 5 7 10 6 9 8 Available • Low Qgd/Qgs ratio helps prevent shoot-through • 100 % Rg and UIS tested Bottom View • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Top surface is connected to pins 1, 5, 6, and 10 PRODUCT SUMMARY VDS (V) APPLICATIONS 20 RDS(on) max. () at VGS = 10 V 0.0034 • VRM RDS(on) max. () at VGS = 4.5 V 0.0055 • DC/DC conversion Qg typ. (nC) 24 ID (A) a (package limit) 50 ID (A) a (silicon limit) 138 Configuration D • Synchronous rectification G S Single N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free PolarPAK SiE822DF-T1-E3 SiE822DF-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage SYMBOL LIMIT VDS VGS 20 ± 20 50 a (package limit) 138 (silicon limit) 50 a 31 b, c 24.8 b, c 80 50 a 4.3 b, c 30 45 104 66 5.2 b, c 3.3 b, c -55 to +150 260 TC = 25 °C Continuous drain current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Avalanche energy L = 0.1 mH IAS EAS UNIT V A mJ TC = 25 °C TC = 70 °C PD W Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range TJ, Tstg °C Soldering recommendations (peak temperature) d, e Notes a. Package limited is 50 A b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S09-1338-Rev. B, 13-Jul-09 Document Number: 74451 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiE822DF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER t  10 s Maximum junction-to-ambient a, b Maximum junction-to-case (drain top) a Maximum junction-to-case (source) a, c Steady state SYMBOL TYPICAL MAXIMUM RthJA 20 24 RthJC (drain) 1 1.2 RthJC (source) 2.8 3.4 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board b. Maximum under steady state conditions is 68 °C/W c. Measured at source pin (on the side of the package) SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient VGS(th) temperature coefficient Gate-source threshold voltage Gate-source leakage VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 μA 20 1.5 25 - 24.1 -7.1 2.3 0.0028 0.0045 90 3.0 ± 100 1 10 0.0034 0.0055 - V VDS = 10 V, VGS = 0 V, f = 1 MHz - 4200 1000 320 - VDS = 10 V, VGS = 10 V, ID = 20 A - 52 78 - 24 13 5 1 50 220 35 20 15 25 35 10 36 1.5 75 330 55 30 25 40 55 15 - 0.8 40 36 19 21 50 80 1.2 60 60 - Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a Dynamic b Input capacitance Output capacitance Reverse transfer capacitance Total gate charge RDS(on) gfs Ciss Coss Crss Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current a ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing ID = 250 μA VDS = VGS, ID = 250 μA VDS = 0 V, VGS = ± 20 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS  5 V, VGS = 10 V VGS = 10 V, ID = 18.3 A VGS = 4.5 V, ID = 14.5 A VDS = 15 V, ID = 18.3 A VDS = 10 V, VGS = 4.5 V, ID = 20 A f = 1 MHz VDD = 10 V, RL = 1 , ID  10 A, VGEN = 4.5 V, Rg = 1  VDD = 20 V, RL = 1 , ID  10 A, VGEN = 10 V, Rg = 1  TC = 25 °C IS = 10 A IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C mV/°C V nA μA A  S pF nC  ns A V ns nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S09-1338-Rev. B, 13-Jul-09 Document Number: 74451 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiE822DF www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 20 VGS = 10 V thru 4 V TC = 125 °C 16 I D - Drain Current (A) I D - Drain Current (A) 60 40 20 12 TC = 25 °C 8 4 VGS = 3 V 0 0.0 0.4 0.8 1.2 1.6 TC = - 55 °C 0 1.5 2.0 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4.0 4800 0.006 Ciss 3600 VGS = 4.5 V 0.005 C - Capacitance (pF) R DS(on) - On-Resistance (m ) 0.0055 0.0045 0.004 0.0035 2400 Coss VGS = 10 V 0.003 1200 0.0025 Crss 0 0.002 0 20 40 60 80 0 10 15 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 20 1.6 10 ID = 20 A ID = 18.3 A 8 1.4 VDS = 10 V VDS = 16 V 6 4 VGS = 10 V, 4.5 V (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 5 ID - Drain Current (A) 1.2 1.0 0.8 2 0 0 10 20 30 40 50 60 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S09-1338-Rev. B, 13-Jul-09 Document Number: 74451 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiE822DF www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.008 R DS(on) - Drain-to-Source On-Resistance ( ) I S - Source Current (A) 100 TJ = 150 °C TJ = 25 °C 10 ID = 18.3 A 0.007 0.006 0.005 TA = 125 °C 0.004 TA = 25 °C 0.003 0.002 1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 3.0 50 2.8 40 2.6 ID = 250 µA Power (W) VGS(th) (V) 2.4 2.2 2.0 30 20 1.8 1.6 10 1.4 1.2 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 1000 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* I D - Drain Current (A) 1 ms 10 10 ms 100 ms 1 1s TA = 25 C Single Pulse 10 s 0.1 DC BVDSS Limited 0.01 0.01 * VGS 1 0.1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S09-1338-Rev. B, 13-Jul-09 Document Number: 74451 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiE822DF www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 160 120 140 100 Power Dissipation (W) I D - Drain Current (A) 120 100 80 Package Limited 60 80 60 40 40 20 20 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating a Power Derating, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S09-1338-Rev. B, 13-Jul-09 Document Number: 74451 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiE822DF www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 55 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Source Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74451. S09-1338-Rev. B, 13-Jul-09 Document Number: 74451 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix PolarPAK
(Option S) M4 Product datasheet/information page contain links to applicable package drawing. 10 9 8 7 6 D G S S D M3 VIEW A E E1 T2 T1 T4 T3 Q T5 M4 M3 T3 M2 T5 Q M1 D G S S D 1 2 3 4 5 c A (Top View) Q Q H1 6 7 8 9 10 D S S G D b1 b3 H4 H3 b2 H2 b1 H1 Z K4 P1 K1 D1 D A1 K4 P1 b4 b4 DETAIL Z b5 D 5 b5 S S 4 3 b5 G D 2 1 VIEW A (Bottom View) Document Number: 73398 10-Jun-05 www.vishay.com 1 Package Information Vishay Siliconix MILLIMETERS Dim A A1 b1 b2 b3 b4 b5 c D D1 E E1 H1 H2 H3 H4 K1 K4 M1 M2 M3 M4 P1 T1 T2 T3 T4 T5 Q INCHES Min Nom Max Min Nom Max 0.75 0.80 0.85 0.030 0.031 0.033 0.00 − 0.05 0.000 − 0.002 0.48 0.58 0.68 0.019 0.023 0.027 0.41 0.51 0.61 0.016 0.020 0.024 2.19 2.29 2.39 0.086 0.090 0.094 0.89 1.04 1.19 0.035 0.041 0.047 0.23 0.33 0.43 0.009 0.013 0.017 0.20 0.25 0.30 0.008 0.010 0.012 6.00 6.15 6.30 0.236 0.242 0.248 5.74 5.89 6.04 0.226 0.232 0.238 5.01 5.16 5.31 0.197 0.203 0.209 4.75 4.90 5.05 0.187 0.193 0.199 0.23 − − 0.009 − − 0.45 − 0.56 0.020 − 0.022 0.31 0.41 0.51 0.012 0.016 0.020 0.45 − 0.56 0.020 − 0.022 4.22 4.37 4.52 0.166 0.172 0.178 0.24 − − 0.009 − − 4.30 4.50 4.70 0.169 0.177 0.185 3.43 3.58 3.73 0.135 0.141 0.147 0.22 − − 0.009 − − 0.05 − − 0.002 − − 0.15 0.20 0.25 0.006 0.008 0.010 3.48 3.64 4.10 0.137 0.143 0.150 0.56 0.76 0.95 0.22 0.030 0.037 1.20 − − 0.051 − − 3.90 − − 0.154 − − 0 0.18 0.36 0.000 0.007 0.014 0_ 10_ 12_ 0_ 10_ 12_ ECN: S−51049—Rev. B, 13-Jun-05 DWG: 5947 Note: Millimeters govern over inches www.vishay.com 2 Document Number: 73398 10-Jun-05 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PolarPAK® Option L and S 7.300 (0.287) 0.510 (0.020) 0.510 (0.020) 0.410 (0.016) 0.955 (0.038) 0.955 (0.038) 4.520 (0.178) 6.310 (0.248) 0.895 (0.035) + 0.895 (0.035) 2.290 (0.090) 0.580 (0.023) 0.580 (0.023) 0.510 (0.020) APPLICATION NOTE Recommended Minimum for PolarPAK Option L and S Dimensions in mm/(Inches) No External Traces within Broken Lines Dot indicates Gate Pin (Part Marking) Return to Index www.vishay.com 6 Document Number: 73491 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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