SIE830DF-T1-E3

SiE830DF Vishay Siliconix New Product N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Extremely Low Qgd WFET® Technology for Low Switching Losses RoHS • Ultra Low Thermal Resistance Using COMPLIANT ® Top-Exposed PolarPAK Package for Double-Sided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through • 100 % Rg and UIS Tested ID (A)a rDS(on) (Ω) Silicon Limit 0.0042 at VGS = 10 V 120 50 0.0048 at VGS = 4.5 V 112 50 VDS (V) 30 Package Qg (Typ) Limit 33 nC Package Drawing PolarPAK 10 D 9 G 8 S 7 S 6 D D D 1 G 2 S 3 6 APPLICATIONS 7 D S 4 D 5 5 Top View Top surface is connected to pins 1, 5, 6, and 10 8 S 4 3 9 10 G D 2 1 • VRM • Point-of-Load • Synchronous Rectification D G Bottom View S Ordering Information: SiE830DF-T1-E3 (Lead (Pb)-free) N-Channel MOSFET For Related Documents ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy ID IDM TC = 25 °C TA = 25 °C IS TC = 25 °C IAS EAS Limit 30 ± 12 120 (Silicon Limit) 50a (Package Limit) 50a 27b, c 21.6b, c 80 50a 4.3b, c 30 45 104 66 5.2b, c 3.3b, c - 50 to 150 260 Unit V A A mJ TC = 25 °C TC = 70 °C PD Maximum Power Dissipation W TA = 25 °C TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range °C Soldering Recommendations (Peak Temperature)d, e Notes: a. Package limited is 50 A. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 sec. d. See Solder Profile (http://www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 74422 S-62482-Rev. A, 04-Dec-06 www.vishay.com 1 SiE830DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter t ≤ 10 sec Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain Top)a Steady State Maximum Junction-to-Case (Source)a, c Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). Symbol RthJA RthJC (Drain) RthJC (Source) Typical 20 1 2.8 Maximum 24 1.2 3.4 Unit °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min VGS = 0 V, ID = 250 µA 30 Gate-Source Threshold Voltage Gate-Source Leakage VDS ΔVDS /TJ ΔVGS(th) /TJ VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Drain-Source On-State Resistance a Forward Transconductance Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge a rDS(on) gfs Ciss Coss Crss Qg Qgs Gate-Source Charge Qgd Gate-Drain Charge Rg Gate Resistance td(on) Turn-on Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-on Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Drain-Source Body Diode Characteristics IS Continuous Source-Drain Diode Current ISM Pulse Diode Forward Currenta VSD Body Diode Voltage trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge ta Reverse Recovery Fall Time tb Reverse Recovery Rise Time Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 12 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 16 A VGS = 4.5 V, ID = 15 A VDS = 15 V, ID = 16 A VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 20 A VDS = 15 V, VGS = 4.5 V, ID = 20 A f = 1 MHz VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 0.6 V 30 - 4.8 1.4 IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C 2 ± 100 1 10 25 V nA µA A 0.0035 0.0039 95 3000 650 220 75 33 11 5.1 1.0 35 105 70 95 15 40 45 10 TC = 25 °C IS = 10 A mV/°C 0.8 40 40 22 18 0.0042 0.0048 Ω S pF 115 50 1.5 55 160 105 145 25 60 70 15 50 80 1.2 60 60 nC Ω ns A V ns nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74422 S-62482-Rev. A, 04-Dec-06 SiE830DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 80 20 VGS = 10 thru 3 V I D - Drain Current (A) I D - Drain Current (A) 16 60 40 12 TC = 125 °C 8 20 4 TC = 25 °C VGS = 2 V 0 0.0 0.5 1.0 TC = - 55 °C 1.5 0 1.0 2.0 1.4 Output Characteristics 2.6 3.0 Transfer Characteristics 0.0044 7200 0.0042 6000 Coss C - Capacitance (pF) VGS = 4.5 V 0.0040 0.0038 0.0036 VGS = 10 V 0.0034 4800 3600 2400 Ciss 1200 0.0032 Crss 0.0030 0 0 20 40 60 0 80 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 1.8 10 ID = 16 A ID = 20 A 1.6 8 VDS = 15 V rDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 2.2 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) rDS(on) - On-Resistance ( ) 1.8 VDS = 32 V 6 4 2 VGS = 4.5 V, 10 V 1.4 1.2 1.0 0.8 0 0 20 40 60 Qg - Total Gate Charge (nC) Gate Charge Document Number: 74422 S-62482-Rev. A, 04-Dec-06 80 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 SiE830DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.010 r DS(on) - Drain-to-Source On-Resistance ( ) I S - Source Current (A) 100 TJ = 150 °C 10 TJ = 25 °C 1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 ID = 16 A 0.009 0.008 0.007 TA = 125 °C 0.006 0.005 TA = 25 °C 0.004 0.003 0.002 0 2 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 1.8 50 1.6 40 ID = 250 µA Power (W) 1.4 VGS(th) (V) 4 1.2 30 20 1.0 10 0.8 0.6 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 TJ - Temperature (°C) 1 10 100 1000 Time (sec) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 *Limited by rDS(on) I D - Drain Current (A) 10 1 ms 10 ms 100 ms 1 1s TA = 25 °C Single Pulse 0.1 10 s DC BVDSS Limited 0.01 0.01 0.1 *VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74422 S-62482-Rev. A, 04-Dec-06 SiE830DF Vishay Siliconix 140 120 120 100 100 Power Dissipation (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 80 60 40 80 60 40 Package Limited 20 20 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating, Junction-to-Case 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74422 S-62482-Rev. A, 04-Dec-06 www.vishay.com 5 SiE830DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 55 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Source Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74422. www.vishay.com 6 Document Number: 74422 S-62482-Rev. A, 04-Dec-06 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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