New Product
SiE862DF
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Gen III Power MOSFET
• Ultra Low Thermal Resistance Using
Top-Exposed PolarPAK® Package for
Double-Sided Cooling
• Leadframe-Based New Encapsulated Package
- Die Not Exposed
- Same Layout Regardless of Die Size ≤ 100 V
• Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
• 100 % Rg and UIS Tested
• Compliant to RoHS directive 2002/95/EC
ID (A)a
RDS(on) (Ω)e
Silicon
Limit
0.0032 at VGS = 10 V
134
50
0.0041 at VGS = 4.5 V
119
50
VDS (V)
30
Package
Qg (Typ.)
Limit
23 nC
Package Drawing
www.vishay.com/doc?68797
PolarPAK
10
D
9
G
8
S
7
S
6
D
6
7
8
9
10
APPLICATIONS
D
D
S
G
•
•
•
•
D
D
VRM
DC/DC Conversion
Synchronous Rectification
POL
G
D
1
G
2
S
S
3
4
Top View
D
5
5
4
3
2
1
S
Bottom View
N-Channel MOSFET
Top surface is connected to pins 1, 5, 6, and 10
For Related Documents
Ordering Information: SiE862DF-T1-GE3 (Lead (Pb)-free and Halogen-free)
www.vishay.com/ppg?65026
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
ID
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
Limit
30
± 20
134 (Silicon Limit)
50a (Package Limit)
50a
30b, c
24b, c
100
50a
4.3b, c
40
80
104
66
5.2b, c
3.3b, c
- 55 to 150
260
Unit
V
A
mJ
TC = 25 °C
TC = 70 °C
PD
W
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
°C
d, e
Soldering Recommendations (Peak Temperature)
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 65026
S09-1395-Rev. A, 20-Jul-09
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1
New Product
SiE862DF
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
t ≤ 10 s
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Case (Drain Top)
Steady State
Maximum Junction-to-Case (Source)a, c
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).
Symbol
RthJA
RthJC (Drain)
RthJC (Source)
Typical
20
1
2.8
Maximum
24
1.2
3.4
Unit
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS = 0 V, ID = 250 µA
30
Gate-Source Threshold Voltage
Gate-Source Leakage
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
VDS = VGS , ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 20 A
VDS = 10 V, ID = 20 A
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
RDS(on)
gfs
Ciss
Coss
Crss
Qg
ID = 250 µA
1.2
mV/°C
2.2
± 100
1
10
25
VDS = 10 V, VGS = 10 V, ID = 20 A
0.3
V
nA
µA
A
0.0026
0.0034
90
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 4.5 V, ID = 20 A
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Rg
f = 1 MHz
Gate Resistance
td(on)
Turn-On Delay Time
VDD = 15 V, RL = 1.5 Ω
tr
Rise Time
td(off)
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
tf
Fall Time
td(on)
Turn-On Delay Time
VDD = 15 V, RL = 1.5 Ω
tr
Rise Time
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
td(off)
Turn-Off Delay Time
tf
Fall Time
Drain-Source Body Diode Characteristics
TC = 25 °C
IS
Continuous Source-Drain Diode Current
ISM
Pulse Diode Forward Currenta
IS = 10 A
VSD
Body Diode Voltage
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
ta
Reverse Recovery Fall Time
tb
Reverse Recovery Rise Time
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
V
31
-6
1.65
3100
610
215
48
23
8
6.8
1.4
30
20
40
15
12
12
35
15
0.8
40
40
21
19
0.0032
0.0038
Ω
S
pF
75
35
2.8
45
30
60
25
20
20
55
25
50
100
1.2
60
60
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 65026
S09-1395-Rev. A, 20-Jul-09
New Product
SiE862DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
100
VGS = 10 V thru 4 V
16
I D - Drain Current (A)
I D - Drain Current (A)
80
60
VGS = 3 V
40
12
TC = - 55 °C
8
TC = 25 °C
4
20
TC = 125 °C
VGS = 2 V
0.5
1.0
1.5
0
0.0
2.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0040
4000
0.0035
3200
VGS = 4.5 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0
0.0
0.0030
VGS = 10 V
0.0025
3.0
Ciss
2400
1600
Coss
0.0020
800
0.0015
0
Crss
0
20
40
60
80
0
100
10
15
20
25
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
30
1.8
10
ID = 20 A
ID = 20 A
1.6
8
VDS = 7.5 V
6
VDS = 15 V
4
VDS = 24 V
2
VGS = 10 V
1.4
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
5
VGS = 4.5 V
1.2
1.0
0.8
0
0
10
20
30
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 65026
S09-1395-Rev. A, 20-Jul-09
40
50
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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New Product
SiE862DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.008
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 20 A
10
TJ = 150 °C
TJ = 25 °C
0.006
TJ = 125 °C
0.004
TJ = 25 °C
0.002
0.000
1
0.0
0.2
0.4
0.6
0.8
0
1.0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
2.2
50
2.0
40
1.8
Power (W)
VGS(th) (V)
ID = 250 µA
1.6
1.4
30
20
1.2
10
1.0
0.8
- 50
- 25
0
25
50
75
100
125
0
0.01
150
0.1
1
10
100
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
100
Limited by RDS(on)*
1 ms
I D - Drain Current (A)
10
10 ms
100 ms
1
1s
10 s
0.1
DC
0.01
BVDSS Limited
TA = 25 °C
Single Pulse
0.001
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 65026
S09-1395-Rev. A, 20-Jul-09
New Product
SiE862DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
150
120
100
Power Dissipation (W)
I D - Drain Current (A)
120
90
60
Package Limited
30
80
60
40
20
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65026
S09-1395-Rev. A, 20-Jul-09
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New Product
SiE862DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 55 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top)
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Source
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65026.
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6
Document Number: 65026
S09-1395-Rev. A, 20-Jul-09
Package Information
Vishay Siliconix
POLARPAK™ OPTION U
M4
M1
M4
E1
E
T2
T4
T1
T3
T5
θ
M2
M3
θ
T5
T3
M3
View A
c
(Top View)
A
θ
A1
θ
D1
D
DETAIL Z
b5
b5
b5
0.127
0.254
P1
0.381
A
K1
K2
P1
K3
K4
0.254
P1
0.203
0.332
K3
0.584
P1
K4
A
H1
H4
b1
b4
b4
b3
H3
H2
b2
H1
b1
View A
(Bottom View)
Document Number: 68797
Revision: 11-Aug-08
www.vishay.com
1
Package Information
Vishay Siliconix
MILLIMETERS
INCHES
DIM
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.75
0.80
0.85
0.030
0.031
0.033
A1
0.00
-
0.05
0.000
-
0.002
b1
0.48
0.58
0.68
0.019
0.023
0.027
b2
0.41
0.51
0.61
0.016
0.020
0.024
b3
2.19
2.29
2.39
0.086
0.090
0.094
b4
0.89
1.04
1.19
0.035
0.041
0.047
b5
0.23
0.33
0.43
0.009
0.013
0.017
c
0.20
0.25
0.30
0.008
0.010
0.012
D
6.00
6.15
6.30
0.236
0.242
0.248
D1
5.74
5.89
6.04
0.226
0.232
0.238
E
5.01
5.16
5.31
0.197
0.203
0.209
E1
4.75
4.90
5.05
0.187
0.193
0.199
H1
0.23
-
-
0.009
-
-
H2
0.45
-
0.56
0.018
-
0.022
H3
0.31
0.41
0.51
0.012
0.016
0.020
H4
0.45
-
0.56
0.018
-
0.022
K1
4.22
4.37
4.52
0.166
0.172
0.178
K2
1.62
1.67
1.72
0.064
0.066
0.068
K3
1.16
-
-
0.046
-
-
K4
0.24
-
-
0.009
-
-
M1
4.30
4.50
4.70
0.169
0.177
0.185
M2
3.43
3.58
3.73
0.135
0.141
0.147
M3
0.22
-
-
0.009
-
-
M4
0.05
-
-
0.002
-
-
P1
0.15
0.20
0.25
0.006
0.008
0.010
T1
3.48
3.64
4.10
0.137
0.143
0.161
T2
0.56
0.76
0.95
0.022
0.030
0.037
T3
1.20
-
-
0.047
-
-
T4
3.90
-
-
0.153
-
-
T5
0
0.18
0.36
0.000
0.007
0.014
θ
0°
10°
12°
0°
10°
12°
ECN: T-08441-Rev. A, 11-Aug-08
DWG: 5966
Notes
Millimeters govern over inches.
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2
Document Number: 68797
Revision: 11-Aug-08
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PolarPAK® Option L and S
7.300
(0.287)
0.510
(0.020)
0.510
(0.020)
0.410
(0.016)
0.955
(0.038)
0.955
(0.038)
4.520
(0.178)
6.310
(0.248)
0.895
(0.035)
+
0.895
(0.035)
2.290
(0.090)
0.580
(0.023)
0.580
(0.023)
0.510
(0.020)
APPLICATION NOTE
Recommended Minimum for PolarPAK Option L and S
Dimensions in mm/(Inches)
No External Traces within Broken Lines
Dot indicates Gate Pin (Part Marking)
Return to Index
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Document Number: 73491
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
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Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
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© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
1
Document Number: 91000
