SiE882DF
www.vishay.com
Vishay Siliconix
N-Channel 25 V (D-S) MOSFET
D
10
S
7
G S
9 8
FEATURES
PolarPAK®
D
6
1
• Ultra low thermal resistance using top-exposed
PolarPAK® package for double-sided cooling
D
S
D
D
G S
D
2 3
1
Top View
• TrenchFET® Gen III power MOSFET
5
4
2 3
S
4
• Leadframe-based encapsulated package
- Die not exposed
- Same layout regardless of die size, 100 V
G
D
5
7
10
6
9 8
• Low Qgd/Qgs ratio helps prevent shoot-through
• 100 % Rg and UIS tested
Bottom View
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Top surface is connected to pins 1, 5, 6, and 10
APPLICATIONS
PRODUCT SUMMARY
VDS (V)
D
• VRM
25
RDS(on) max. () at VGS = 10 V
0.0014
• DC/DC conversion: low side
RDS(on) max. () at VGS = 4.5 V
0.0018
• Server VCORE
Qg typ. (nC)
ID (A) a (package limit)
60
ID (A) a (silicon limit)
229
Configuration
G
46
S
N-Channel MOSFET
Single
ORDERING INFORMATION
Package
PolarPAK
Lead (Pb)-free and halogen-free
SiE882DF-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
SYMBOL
LIMIT
UNIT
VDS
VGS
25
± 20
V
60 a (package limit)
TC = 25 °C
Continuous drain current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current
ID
IDM
Continuous source-drain diode current
TC = 25 °C
TA = 25 °C
IS
Single pulse avalanche current
Avalanche energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
TC = 70 °C
Maximum power dissipation
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
PD
TJ, Tstg
229 (silicon limit)
60 a
47 b, c
41 b, c
100
60 a
4.3 b, c
50
125
125
80
5.2 b, c
3.3 b, c
-55 to +150
260
A
mJ
W
°C
Notes
a. Package limited is 60 A
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S09-1221-Rev. A, 29-Jun-09
Document Number: 65002
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiE882DF
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
t 10 s
Maximum junction-to-ambient a, b
Maximum junction-to-case (drain top)
Maximum junction-to-case (source) a, c
Steady state
SYMBOL
TYPICAL
MAXIMUM
RthJA
20
24
RthJC (drain)
0.8
1
RthJC (source)
2.2
2.7
UNIT
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board
b. Maximum under steady state conditions is 68 °C/W
c. Measured at source pin (on the side of the package)
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
VDS temperature coefficient
SYMBOL
TEST CONDITIONS
MIN.
VDS
VGS = 0 V, ID = 250 μA
VDS/TJ
TYP.
MAX.
UNIT
25
-
-
V
-
25
-
-
-6
-
1.7
-
2.2
± 100
1
10
V
nA
VGS(th) temperature coefficient
VGS(th)/TJ
ID = 250 μA
Gate-source threshold voltage
Gate-source leakage
VGS(th)
IGSS
Zero gate voltage drain current
IDSS
VDS = VGS , ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VDS = 25 V, VGS = 0 V
VDS = 25 V, VGS = 0 V, TJ = 55 °C
1
-
On-state drain current a
ID(on)
VDS 5 V, VGS = 10 V
25
-
-
A
RDS(on)
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 20 A
-
0.0011
0.0015
0.0014
0.0018
Forward transconductance a
gfs
VDS = 15 V, ID = 20 A
-
125
-
S
Dynamic b
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS = 12.5 V, VGS = 0 V, f = 1 MHz
0.2
-
6400
1400
550
96
46
18
12
1.1
45
170
65
85
20
15
45
10
145
70
2.2
70
255
100
130
30
25
70
15
-
-
60
-
-
100
-
0.8
55
70
1.2
85
105
-
25
-
-
30
-
Drain-source on-state resistance a
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = 12.5 V, VGS = 4.5 V, ID = 20 A
IS
TC = 25 °C
Pulse diode forward current a
ISM
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
VSD
trr
Qrr
Reverse recovery fall time
VDS = 12.5 V, VGS = 10 V, ID = 20 A
ta
Reverse recovery rise time
tb
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
f = 1 MHz
VDD = 12.5 V, RL = 1.25 ,
ID 10 A, VGEN = 4.5 V, Rg = 1
VDD = 12.5 V, RL = 1.25 ,
ID 10 A, VGEN = 10 V, Rg = 1
IS = 10 A
IF = 10 A, di/dt = 100 A/μs,
TJ = 25 °C
mV/°C
μA
pF
nC
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S09-1221-Rev. A, 29-Jun-09
Document Number: 65002
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiE882DF
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
100
VGS = 3 V
VGS = 10 V thru 4 V
30
I D - Drain Current (A)
I D - Drain Current (A)
80
60
40
20
TC = 25 °C
10
20
TC = 125 °C
VGS = 2 V
0
0.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
TC = - 55 °C
0
0.0
3.0
0.5
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
3.0
Transfer Characteristics
Output Characteristics
0.0020
8000
0.0016
0.0012
R DS(on) - On-Resistance (Ω)
R DS(on) - On-Resistance (Ω)
Ciss
VGS = 4.5 V
VGS = 10 V
0.0008
0.0004
6000
4000
Coss
2000
Crss
0.0000
0
0
20
40
60
80
100
0
5
10
15
ID - Drain Current (A)
ID - Drain Current (A)
25
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
1.8
ID = 20 A
R DS(on) - On-Resistance (Normalized)
10
VGS - Gate-to-Source Voltage (V)
20
VDS = 12.5 V
8
VDS = 6 V
6
VDS = 20 V
4
2
0
0
20
40
60
80
Qg - Total Gate Charge (nC)
Gate Charge
S09-1221-Rev. A, 29-Jun-09
100
ID = 20 A
1.6
VGS = 10 V
1.4
VGS = 4.5 V
1.2
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
125
150
On-Resistance vs. Junction Temperature
Document Number: 65002
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiE882DF
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.005
100
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 20 A
10
TJ = 150 °C
TJ = 25 °C
0.004
0.003
0.002
TJ = 125 °C
0.001
TJ = 25 °C
0.000
1
0.0
0.2
0.4
0.6
0.8
VSD - Source-to-Drain Voltage (V)
1.0
0
Source-Drain Diode Forward Voltage
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
2.0
50
1.8
40
ID = 250 µA
Power (W)
VGS(th) (V)
1.6
1.4
30
20
1.2
10
1.0
0.8
- 50
- 25
0
25
50
75
100
TJ - Temperature (°C)
125
150
0
0.01
0.1
1
10
100
1000
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
1 ms
I D - Drain Current (A)
10
10 ms
100 ms
1
1s
10 s
0.1
TA = 25 °C
Single Pulse
DC
BVDSS Limited
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S09-1221-Rev. A, 29-Jun-09
Document Number: 65002
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiE882DF
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
140
300
120
Power Dissipation (W)
I D - Drain Current (A)
250
200
150
100
Package Limited
50
100
80
60
40
20
0
0
0
25
50
75
100
125
TC - Case Temperature (°C)
Current Derating a
150
25
50
75
100
125
TC - Case Temperature (°C)
150
Power Derating, Junction-to-Case
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S09-1221-Rev. A, 29-Jun-09
Document Number: 65002
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiE882DF
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 68 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
10-3
10-2
4. Surface Mounted
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top)
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Source
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65002.
S09-1221-Rev. A, 29-Jun-09
Document Number: 65002
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
POLARPAK™ OPTION L
M4
Product datasheet/information page contain
links to applicable package drawing.
10
9
8
7
6
D
G
S
S
D
M2
M1
M3
D
G
S
1
2
3
S
4
c
D
5
A
(Top View)
b1 H4
H1
7
S
8
S
9
G
b1 H1
10
D
K4
6
D
θ
H3 b2 H2
b3
θ
P1
K3
Z
P1
T5
θ
T3
M3
View A
E
E1
T2
T4
T1
T3
θ
T5
M4
A
b4
K4
A1
K3
P1
b4
P1
K2
K1
D1
D
0.26
b5
S
4
b5
S
3
G
2
D
1
b5
View A
(Bottom View)
0.13
0.25
DETAIL Z
D
5
0.39
A
0.20
0.33
0.58
Document Number: 72945
Revision: 11-Aug-08
www.vishay.com
1
Package Information
Vishay Siliconix
MILLIMETERS
INCHES
DIM
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.75
0.80
0.85
0.030
0.031
0.033
A1
0.00
-
0.05
0.000
-
0.002
b1
0.48
0.58
0.68
0.019
0.023
0.027
b2
0.41
0.51
0.61
0.016
0.020
0.024
b3
2.19
2.29
2.39
0.086
0.090
0.094
b4
0.89
1.04
1.19
0.035
0.041
0.047
b5
0.23
0.33
0.43
0.009
0.013
0.017
c
0.20
0.25
0.30
0.008
0.010
0.012
D
6.00
6.15
6.30
0.236
0.242
0.248
D1
5.74
5.89
6.04
0.226
0.232
0.238
E
5.01
5.16
5.31
0.197
0.203
0.209
E1
4.75
4.90
5.05
0.187
0.193
0.199
H1
0.23
-
-
0.009
-
-
H2
0.45
-
0.56
0.018
-
0.022
H3
0.31
0.41
0.51
0.012
0.016
0.020
H4
0.45
-
0.56
0.018
-
0.022
K1
4.22
4.37
4.52
0.166
0.172
0.178
K2
1.08
1.13
1.18
0.043
0.044
0.046
K3
1.37
-
-
0.054
-
-
K4
0.24
-
-
0.009
-
-
M1
4.30
4.50
4.70
0.169
0.177
0.185
M2
3.43
3.58
3.73
0.135
0.141
0.147
M3
0.22
-
-
0.009
-
-
M4
0.05
-
-
0.002
-
-
P1
0.15
0.20
0.25
0.006
0.008
0.010
T1
3.48
3.64
4.10
0.137
0.143
0.161
T2
0.56
0.76
0.95
0.022
0.030
0.037
T3
1.20
-
-
0.047
-
-
T4
3.90
-
-
0.153
-
-
T5
0
0.18
0.36
0.000
0.007
0.014
θ
0°
10°
12°
0°
10°
12°
ECN: T-08441-Rev. C, 11-Aug-08
DWG: 5946
Notes
Millimeters govern over inches.
www.vishay.com
2
Document Number: 72945
Revision: 11-Aug-08
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PolarPAK® Option L and S
7.300
(0.287)
0.510
(0.020)
0.510
(0.020)
0.410
(0.016)
0.955
(0.038)
0.955
(0.038)
4.520
(0.178)
6.310
(0.248)
0.895
(0.035)
+
0.895
(0.035)
2.290
(0.090)
0.580
(0.023)
0.580
(0.023)
0.510
(0.020)
APPLICATION NOTE
Recommended Minimum for PolarPAK Option L and S
Dimensions in mm/(Inches)
No External Traces within Broken Lines
Dot indicates Gate Pin (Part Marking)
Return to Index
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Document Number: 73491
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 01-Jan-2022
1
Document Number: 91000
