SiHP18N50C, SiHF18N50C
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V) at TJ max.
• Low Figure-of-Merit Ron x Qg
560
RDS(on) (Ω)
VGS = 10 V
• 100 % Avalanche Tested
0.225
Qg (Max.) (nC)
76
• High Peak Current Capability
Qgs (nC)
21
• dV/dt Ruggedness
Qgd (nC)
29
• Improved trr/Qrr
Configuration
Single
• Improved Gate Charge
• High Power Dissipations Capability
D
TO-220
• Compliant to RoHS Directive 2002/95/EC
TO-220 FULLPAK
G
S
G
D
GDS
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220
TO-220 FULLPAK
Lead (Pb)-free
SiHP18N50C-E3
SiHF18N50C-E3
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
500
Gate-Source Voltage
VGS
± 30
Continuous Drain Current (TJ = 150 °C)a
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currentb
Linear Derating Factor
IDM
FULLPAK
0.3
EAS
FULLPAK
Peak Diode Recovery dV/dtd
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
PD
A
72
1.8
TO-220
V
18
11
TO-220
Single Pulse Avalanche Energyc
Maximum Power Dissipation
ID
UNIT
361
223
38
dV/dt
5
TJ, Tstg
- 55 to + 150
300
W/°C
mJ
W
V/ns
°C
Notes
a. Drain current limited by maximum junction temperature.
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 17 A.
d. ISD ≤ 18 A, dI/dt ≤ 380 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
e. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91374
S09-1257-Rev. B, 13-Jul-09
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SiHP18N50C, SiHF18N50C
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
TO-220
FULLPAK
TO-220
FULLPAK
TYP.
MAX.
-
62
RthJA
RthJC
-
65
-
0.56
-
3.29
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
VDS
VGS = 0 V, ID = 250 µA
500
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.6
-
V/°C
VGS(th)
VDS = VGS, ID = 250 µA
3.0
-
5.0
V
Gate-Source Leakage
IGSS
VGS = ± 30 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 500 V, VGS = 0 V
-
-
25
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
250
-
0.225
0.270
Ω
-
6.4
-
S
Drain-Source On-State Resistance
Forward Transconductancea
RDS(on)
gfs
VGS = 10 V
ID = 10 A
VDS = 50 V, ID = 10 A
µA
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
-
2451
2942
Output Capacitance
Coss
VDS = 25 V,
-
300
360
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
-
26
32
Internal Gate Resistance
Rg
f = 1.0 MHz, open drain
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
VGS = 10 V
ID = 18 A, VDS = 400 V
VDD = 250 V, ID = 18 A
Rg = 7.5 Ω, VGS = 10 V
tf
pF
Ω
-
1.1
-
-
65
76
-
21
-
-
29
-
-
80
-
-
27
-
-
32
-
-
44
-
-
-
18
-
-
72
-
-
1.5
V
-
503
-
ns
-
6.7
-
µC
-
30
-
A
nC
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Current
IRRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IS = 18 A, VGS = 0 V
TJ = 25 °C, IF = IS,
dI/dt = 100 A/µs, VR = 35 V
S
Note
a. Repetitive rating; pulse width limited by maximum junction temperature.
The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar
product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products.
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Document Number: 91374
S09-1257-Rev. B, 13-Jul-09
SiHP18N50C, SiHF18N50C
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
100
VGS
15 V
60
14 V
13 V
12 V
11 V
50
10 V
9.0 V
8.0 V
40
7.0 V
6.0 V
30 Bottom 5.0 V
TJ = 25 °C
TJ = 150 °C
ID, Drain Current (A)
ID, Drain Current (A)
Top
20
10
TJ = 25 °C
1
0.1
7.0 V
10
0
0.01
0
6
12
18
24
30
5
TJ = 150 °C
ID, Drain Current (A)
7.0 V
10
0
6
12
18
24
30
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C (TO-220)
Document Number: 91374
S09-1257-Rev. B, 13-Jul-09
RDS(on), Drain-to-Source On Resistance
(Normalized)
40
0
8
9
10
Fig. 3 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics, TC = 150 °C (TO-220)
VGS
15 V
14 V
13 V
12 V
30
11 V
10 V
9.0 V
8.0 V
7.0 V
20
6.0 V
Bottom 5.0 V
7
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Top
6
3
2.5
ID = 17 A
2
1.5
VGS = 10 V
1
0.5
0
- 60 - 40 - 20
0
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
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SiHP18N50C, SiHF18N50C
Vishay Siliconix
100
105
Capacitance (pF)
104
ISD, Reverse Drain Current (A)
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Ciss
103
102
Coss
1
10
100
VGS = 0 V
0.1
1000
0.2
0.5
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
1.4
103
Operation in this area limited
by RDS(on)
VDS = 400 V
VDS = 250 V
VDS = 100 V
102
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
1.1
Fig. 7 - Typical Source-Drain Diode Forward Voltage
ID = 17 A
16
0.8
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
20
TJ = 25 °C
1
Crss
10
TJ = 150 °C
10
12
8
10
100 µs
1 ms
1
TC = 25 °C
TJ = 150 °C
Single Pulse
4
0
10 ms
0.1
0
30
60
90
120
102
10
QG, Total Gate Charge (nC)
103
104
VDS, Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
ID, Drain Current (A)
20
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature (TO-220)
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Document Number: 91374
S09-1257-Rev. B, 13-Jul-09
SiHP18N50C, SiHF18N50C
Vishay Siliconix
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-2
10-3
0.1
1
Pulse Time (s)
Fig. 10 - Normalized Thermal Transient Impedance, Junction-to-Case (TO-220)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-2
10-3
0.1
10
1
Pulse Time (s)
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case (TO-220FP)
VDS
RD
VDS
90 %
VGS
RG
D.U.T.
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 12a - Switching Time Test Circuit
Document Number: 91374
S09-1257-Rev. B, 13-Jul-09
10 %
VGS
td(on)
tr
td(off) tf
Fig. 12b - Switching Time Waveforms
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SiHP18N50C, SiHF18N50C
Vishay Siliconix
L
Vary tp to obtain
required IAS
VDS
D.U.T
RG
+
-
IAS
QG
10 V
V DD
QGS
QGD
10 V
VG
0.01 Ω
tp
Fig. 13a - Unclamped Inductive Test Circuit
Charge
VDS
Fig. 14a - Basic Gate Charge Waveform
tp
VDD
Current regulator
Same type as D.U.T.
VDS
50 kΩ
IAS
12 V
0.2 µF
0.3 µF
Fig. 13b - Unclamped Inductive Waveforms
+
D.U.T.
-
VDS
VGS
3 mA
IG
ID
Current sampling resistors
Fig. 14b - Gate Charge Test Circuit
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Document Number: 91374
S09-1257-Rev. B, 13-Jul-09
SiHP18N50C, SiHF18N50C
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
+
• dV/dt controlled by RG
• ISD controlled by duty factor "D"
• D.U.T. - device under test
RG
Driver gate drive
P.W.
Period
D=
+
-
VDD
P.W.
Period
VGS = 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Body diode
VDD
forward drop
Inductor current
Ripple ≤ 5 %
ISD
* VGS = 5 V for logic level and 3 V drive devices
Fig. 15 - For N-Channel
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91374.
Document Number: 91374
S09-1257-Rev. B, 13-Jul-09
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Disclaimer
All product specifications and data are subject to change without notice.
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therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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