IRFL9014, SiHFL9014
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
•
•
•
•
•
•
-60
RDS(on) ()
VGS = -10 V
Qg (Max.) (nC)
0.50
12
Qgs (nC)
3.8
Qgd (nC)
5.1
Configuration
Single
S
SOT-223
DESCRIPTION
G
D
G
D
Surface mount
Available in tape and reel
Dynamic dV/dt rating
Repetitive avalanche rated
Available
P-channel
Fast switching
Ease of paralleling
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
has the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
S
D
Marking code: FE
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SOT-223
SiHFL9014-GE3
IRFL9014PbF
SiHFL9014-E3
Lead (Pb)-free
SOT-223
SiHFL9014TR-GE3
IRFL9014TRPbF a
SiHFL9014T-E3 a
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
-60
Gate-Source Voltage
VGS
± 20
VGS at - 10 V
Continuous Drain Current
TC = 25 °C
TC = 100 °C
Pulsed Drain Current a
ID
IDM
UNIT
V
-1.8
-1.1
A
-14
Linear Derating Factor
0.025
Linear Derating Factor (PCB Mount) e
0.017
W/°C
Single Pulse Avalanche Energy b
EAS
140
Repetitive Avalanche Current a
IAR
-1.8
A
Repetitive Avalanche Energy a
EAR
0.31
mJ
Maximum Power Dissipation
Maximum Power Dissipation (PCB
TC = 25 °C
Mount) e
TA = 25 °C
Peak Diode Recovery dV/dt c
Operating Junction and Storage Temperature Range
for 10 s
Soldering Recommendations (Peak Temperature) d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 50 mH, Rg = 25 , IAS = - 1.8 A (see fig. 12).
c. ISD - 6.7 A, dI/dt 90 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S14-1686-Rev. F, 18-Aug-14
PD
3.1
2.0
dV/dt
-4.5
TJ, Tstg
-55 to +150
300
mJ
W
V/ns
°C
Document Number: 91195
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFL9014, SiHFL9014
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
(PCB Mount) a
PARAMETER
RthJA
-
60
Maximum Junction-to-Case (Drain)
RthJC
-
40
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VGS = 0 V, ID = 250 μA
-60
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
-0.059
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
-2.0
-
-4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
VDS = -60 V, VGS = 0 V
-
-
- 100
VDS = -48 V, VGS = 0 V, TJ = 125 °C
-
-
-500
-
-
0.50
1.3
-
-
S
-
270
-
-
170
-
-
31
-
-
-
12
ID = 1.1 A b
VGS = -10 V
VDS = - 25 V, ID = 1.1 A
b
μA
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
-
-
3.8
Gate-Drain Charge
Qgd
-
-
5.1
Turn-On Delay Time
td(on)
-
11
-
tr
-
63
-
-
9.6
-
-
31
-
-
4.0
-
-
6.0
-
-
-
- 1.8
-
-
- 14
-
-
- 5.5
Rise Time
Turn-Off Delay Time
Fall Time
td(off)
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = - 10 V
ID = - 6.7 A, VDS = - 48 V,
see fig. 6 and 13 b
VDD = - 30 V, ID = - 6.7 A,
Rg = 24 , RD = 4.0 , see fig. 10 b
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
pF
nC
ns
D
nH
G
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Current a
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = - 1.8 A, VGS = 0 V b
TJ = 25 °C, IF = - 6.7 A, dI/dt = 100 A/μs b
V
-
80
160
ns
-
0.096
0.19
μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
S14-1686-Rev. F, 18-Aug-14
Document Number: 91195
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFL9014, SiHFL9014
www.vishay.com
Vishay Siliconix
Top
-10 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
Bottom -4.5 V
101
- ID, Drain Current (A)
VGS
-15 V
100
4.5 V
10-1
20 µs Pulse Width
TC = 25 °C
101
100
10-1
- VDS, Drain-to-Source Voltage (V)
91195_01
RDS(on), Drain-to-Source On Resistance
(Normalized)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.5
ID = - 6.7 A
VGS = 10 V
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
TJ, Junction Temperature (°C)
91195_04
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
600
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
101
4.5 V
10-1
Coss
200
Crss
100
- VDS, Drain-to-Source Voltage (V)
25 °C
150 °C
100
10-1
20 µs Pulse Width
VDS = - 25 V
4
5
6
7
8
9
- VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S14-1686-Rev. F, 18-Aug-14
101
- VDS, Drain-to-Source Voltage (V)
91195_05
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
101
- ID, Drain Current (A)
Ciss
300
0
101
Fig. 2 - Typical Output Characteristics, TC = 150 °C
91195_03
400
100
20 µs Pulse Width
TC = 150 °C
100
91195_02
Capacitance (pF)
VGS
-15 V
-10 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
Bottom -4.5 V
Top
- VGS, Gate-to-Source Voltage (V)
- ID, Drain Current (A)
500
100
20 40 60 80 100 120 140 160
ID = -6.7 A
VDS = -48 V
16
VDS = -30 V
12
8
4
For test circuit
see figure 13
0
10
0
91195_06
4
8
12
16
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91195
3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFL9014, SiHFL9014
www.vishay.com
Vishay Siliconix
101
150 °C
- ID, Drain Current (A)
- ISD, Reverse Drain Current (A)
2.0
25 °C
100
1.0
0.5
VGS = 0 V
10-1
1.0
0.0
2.0
3.0
5.0
4.0
6.0
25
- VSD, Source-to-Drain Voltage (V)
91195_07
102
50
125
150
RD
VDS
VGS
2
10
100
Fig. 9 - Maximum Drain Current vs. Case Temperature
Operation in this area limited
by RDS(on)
5
75
TC, Case Temperature (°C)
91195_09
Fig. 7 - Typical Source-Drain Diode Forward Voltage
- ID, Drain Current (A)
1.5
D.U.T.
Rg
100 µs
+VDD
5
- 10 V
1 ms
2
1
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
10 ms
5
0.1
0.1
Fig. 10a - Switching Time Test Circuit
TC = 25 °C
TJ = 150 °C
Single Pulse
2
2
5
1
2
5
10
2
5
102
2
5
td(on)
103
- VDS, Drain-to-Source Voltage (V)
91195_08
td(off) tf
tr
VGS
10 %
Fig. 8 - Maximum Safe Operating Area
90 %
VDS
Fig. 10b - Switching Time Waveforms
Thermal Response (ZτηJC)
102
0 − 0.5
10 0.2
0.1
0.05
1 0.02
PDM
0.01
Single Pulse
(Thermal Response)
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
0.1
10-2
10-5
91195_11
10-4
10-3
10-2
0.1
1
10
102
103
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S14-1686-Rev. F, 18-Aug-14
Document Number: 91195
4
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFL9014, SiHFL9014
www.vishay.com
Vishay Siliconix
L
Vary tp to obtain
required IAS
IAS
VDS
VDS
D.U.T
Rg
+ V DD
VDD
IAS
tp
- 10 V
0.01 Ω
tp
VDS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12a - Unclamped Inductive Test Circuit
EAS, Single Pulse Energy (mJ)
400
ID
- 0.80 A
- 1.1 A
Bottom - 1.8 A
Top
300
200
100
0
VDD = - 25 V
25
91195_12c
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
- 10 V
12 V
0.2 µF
0.3 µF
QGS
-
QGD
D.U.T.
VG
+ VDS
VGS
- 3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
S14-1686-Rev. F, 18-Aug-14
Fig. 13b - Gate Charge Test Circuit
Document Number: 91195
5
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFL9014, SiHFL9014
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
+
-
-
Rg
• dV/dt controlled by Rg
• ISD controlled by duty factor “D”
• D.U.T. - device under test
+
-
VDD
Note
• Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = - 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91195.
S14-1686-Rev. F, 18-Aug-14
Document Number: 91195
6
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOT-223 (HIGH VOLTAGE)
B
D
A
3
0.08 (0.003)
B1
C
0.10 (0.004) M C B M
A
4
3
H
E
0.20 (0.008) M C A M
L1
1
2
3
4xL
3xB
e
θ
0.10 (0.004) M C B M
e1
4xC
MILLIMETERS
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
1.55
1.80
0.061
0.071
0.033
B
0.65
0.85
0.026
B1
2.95
3.15
0.116
0.124
C
0.25
0.35
0.010
0.014
D
6.30
6.70
0.248
0.264
E
3.30
3.70
0.130
e
2.30 BSC
e1
4.60 BSC
0.181 BSC
H
6.71
7.29
0.264
L
0.91
-
0.036
L1
θ
0.061 BSC
-
0.146
0.0905 BSC
0.287
0.0024 BSC
10'
-
10'
ECN: S-82109-Rev. A, 15-Sep-08
DWG: 5969
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension do not include mold flash.
4. Outline conforms to JEDEC outline TO-261AA.
Document Number: 91363
Revision: 15-Sep-08
www.vishay.com
1
Legal Disclaimer Notice
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
1
Document Number: 91000
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