SiHFPS38N60L
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
D
• Superfast body diode eliminates the need for
external diodes in ZVS applications
Super-247
• Lower gate charge results in simple drive
requirements
G
• Enhanced dV/dt capabilities offer improved
ruggedness
S
D
G
• Higher gate voltage threshold offers improved noise
immunity
S
N-Channel MOSFET
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VDS (V)
APPLICATIONS
600
RDS(on) (Ω)
VGS = 10 V
• Zero voltage switching SMPS
0.12
Qg (Max.) (nC)
320
• Telecom and server power supplies
Qgs (nC)
85
• Uniterruptible power supplies
Qgd (nC)
160
• Motor control applications
Configuration
Single
ORDERING INFORMATION
Package
Super-247
Lead (Pb)-free and halogen-free
SiHFPS38N60L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
600
Gate-source voltage
VGS
± 30
Continuous drain current
VGS at 10 V
TC = 25 °C
ID
TC = 100 °C
current a
UNIT
V
38
24
A
IDM
150
4.3
W/°C
Single pulse avalanche energy b
EAS
680
mJ
Repetitive avalanche current a
IAR
38
A
EAR
54
mJ
Pulsed drain
Linear derating factor
Repetitive avalanche
energy a
Maximum power dissipation
PD
540
W
dV/dt
19
V/ns
TJ, Tstg
- 55 to + 150
TC = 25 °C
Peak diode recovery dV/dt c
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
Mounting torque
for 10 s
6-32 or M3 screw
300 d
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12)
b. Starting TJ = 25 °C, L = 0.91 mH, Rg = 25 Ω, IAS = 38 A, dV/dt = 13 V/ns (see fig. 14a)
c. ISD ≤ 38 A, dI/dt ≤ 630 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case
S21-0019-Rev. C, 18-Jan-2021
Document Number: 91259
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHFPS38N60L
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient
Case-to-sink, flat, greased surface
Maximum junction-to-case (drain)
SYMBOL
TYP.
MAX.
UNIT
RthJA
RthCS
RthJC
0.24
-
40
0.22
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
600
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
410
-
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
3.0
-
5.0
V
Gate-source leakage
IGSS
VGS = ± 30 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
VDS = 600 V, VGS = 0 V
-
-
50
μA
Static
Drain-source breakdown voltage
VDS temperature coefficient
Gate-source threshold voltage
Drain-source on-state resistance
Forward transconductance
RDS(on)
VDS = 480 V, VGS = 0 V, TJ = 125 °C
ID = 23 A b
VGS = 10 V
-
-
2.0
mA
-
0.12
0.15
Ω
S
gfs
VDS = 50 V, ID = 23 A b
20
-
-
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
7990
-
-
740
-
-
72
-
-
350
-
-
260
-
-
-
320
-
-
85
-
-
160
-
1.2
-
-
44
-
Dynamic
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Effective output capacitance
Coss eff.
Effective output capacitance
(energy related)
Coss eff. (ER)
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VGS = 0 V
VDS = 0 V to 480 V c
RG
VGS = 10 V
ID = 38 A, VDS = 480 V
see fig. 7 and 15 b
f = 1 MHz, open drain
td(on)
tr
td(off)
VDD = 300 V, ID = 38 A,
RG = 4.3 Ω, VGS = 10 V,
see fig. 11a and 11b b
tf
-
130
-
-
92
-
-
69
-
-
-
38
-
-
150
pF
nC
Ω
ns
Drain-source body diode characteristics
Continuous source-drain diode current
IS
Pulsed diode forward current a
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery time
IRRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IS = 38 A, VGS = 0
S
Vb
-
-
1.5
TJ = 25 °C, IF = 38 A
-
170
250
TJ = 125 °C, dI/dt = 100 A/μs b
-
420
630
TJ = 25 °C, IF = 38 A, VGS = 0 V b
-
830
1240
TJ = 125 °C, dI/dt = 100 A/μs b
-
2600
3900
TJ = 25 °C
-
9.1
14
V
ns
nC
A
Forward turn-On time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising form 0 % to 80 % VDS
Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 % to 80 % VDS
S21-0019-Rev. C, 18-Jan-2021
Document Number: 91259
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHFPS38N60L
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1000
3.0
10
BOTTOM
1
0.1
4.5V
0.01
20µs PULSE WIDTH
Tj = 25°C
ID = 38A
VGS = 10V
2.5
2.0
(Normalized)
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (A)
TOP
1.5
1.0
0.5
0.001
0.0
0.1
1
10
100
-60 -40 -20
VDS, Drain-to-Source Voltage (V)
20
40
60
80 100 120 140 160
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 1 - Typical Output Characteristics
100000
1000
100
BOTTOM
VGS
Ciss
Crss
Coss
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10000
C, Capacitance(pF)
TOP
ID, Drain-to-Source Current (A)
0
T J , Junction Temperature (°C)
10
4.5V
1
= 0V,
f = 1 MHZ
= Cgs + Cgd , Cds SHORTED
= Cgd
= Cds + Cgd
Ciss
1000
Coss
100
Crss
20µs PULSE WIDTH
Tj = 150°C
0.1
10
0.1
1
10
100
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
50
1000
40
100
T J = 150°C
35
Energy (µJ)
ID, Drain-to-Source Current (Α )
45
10
1
30
25
20
15
T J = 25°C
10
0.1
5
0
0.01
4
6
8
10
12
14
16
VGS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S21-0019-Rev. C, 18-Jan-2021
0
100
200
300
400
500
600
700
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Capacitance Stored Energy vs. VDS
Document Number: 91259
3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHFPS38N60L
www.vishay.com
Vishay Siliconix
40
12.0
35
VDS= 480V
VDS= 300V
10.0
30
ID, Drain Current (A)
VGS , Gate-to-Source Voltage (V)
ID= 38A
VDS= 120V
8.0
6.0
4.0
2.0
25
20
15
10
5
0
0.0
0
50
100
150
200
250
25
50
75
100
125
150
T C , Case Temperature (°C)
Q G Total Gate Charge (nC)
Fig. 2 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 10 - Maximum Drain Current vs. Case Temperature
RD
1000.00
ISD, Reverse Drain Current (A)
VDS
VGS
100.00
D.U.T.
RG
+
- VDD
T J = 150°C
10 V
10.00
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
T J = 25°C
1.00
Fig. 11a - Switching Time Test Circuit
VGS = 0V
0.10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VDS
90 %
VSD, Source-to-Drain Voltage (V)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
10 %
VGS
td(on)
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
tr
td(off) tf
Fig. 11b - Switching Time Waveforms
100
100µsec
10
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
0.1
1
10
100
1000
10000
VDS, Drain-to-Source Voltage (V)
Fig. 9 - Maximum Safe Operating Area
S21-0019-Rev. C, 18-Jan-2021
Document Number: 91259
4
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHFPS38N60L
www.vishay.com
Vishay Siliconix
Thermal Response ( Z thJC )
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
P DM
t1
0.001
t2
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty factor D =
2. Peak T
t1/ t 2
J = P DM x Z thJC
+T C
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 10 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VGS(th) Gate threshold Voltage (V)
5.0
4.5
15 V
4.0
3.5
3.0
ID = 250µA
2.5
Driver
L
VDS
2.0
D.U.T
RG
1.5
+
- VDD
IAS
1.0
20 V
tp
0.5
0.0
-75 -50 -25
0
25
50
75
100 125 150 175
A
0.01Ω
Fig. 14b - Unclamped Inductive Test Circuit
T J , Temperature ( °C )
VDS
Fig. 13 - Threshold Voltage vs. Temperature
tp
EAS , Single Pulse Avalanche Energy (mJ)
1400
ID
17A
24A
BOTTOM 38A
TOP
1200
1000
IAS
800
600
Fig. 14c - Unclamped Inductive Waveforms
400
200
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig. 14a - Maximum Avalanche Energy vs. Drain Current
S21-0019-Rev. C, 18-Jan-2021
Document Number: 91259
5
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHFPS38N60L
www.vishay.com
Vishay Siliconix
Current regulator
Same type as D.U.T.
50 kΩ
12 V
QG
VGS
0.2 µF
0.3 µF
QGS
+
D.U.T.
-
VDS
QGD
VG
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 15a - Basic Gate Charge Waveform
S21-0019-Rev. C, 18-Jan-2021
Fig. 15b - Gate Charge Test Circuit
Document Number: 91259
6
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHFPS38N60L
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 16 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91259
S21-0019-Rev. C, 18-Jan-2021
Document Number: 91259
7
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-274AA (High Voltage)
VERSION 1: FACILITY CODE = Y
B
A
E
E4
A
D2
E1
A1
R
D1
D
L1
L
Detail “A”
C
b
e
A2
0.10 (0.25) M B A M
10°
b4
b2
Lead Tip
5°
Detail “A”
Scale: 2:1
MILLIMETERS
INCHES
MILLIMETERS
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
DIM.
MIN.
MAX.
MIN.
A
4.70
5.30
0.185
0.209
D1
15.50
16.10
0.610
0.634
A1
1.50
2.50
0.059
0.098
D2
0.70
1.30
0.028
0.051
A2
2.25
2.65
0.089
0.104
E
15.10
16.10
0.594
0.634
13.30
13.90
0.524
0.547
b
1.30
1.60
0.051
0.063
E1
b2
1.80
2.20
0.071
0.087
e
5.45 BSC
MAX.
0.215 BSC
b4
3.00
3.25
0.118
0.128
L
13.70
14.70
0.539
0.579
c (1)
0.38
0.89
0.015
0.035
L1
1.00
1.60
0.039
0.063
D
19.80
20.80
0.780
0.819
R
2.00
3.00
0.079
0.118
Notes
• Dimensioning and tolerancing per ASME Y14.5M-1994
• Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outer extremes of the plastic body
• Outline conforms to JEDEC® outline to TO-274AA
(1) Dimension measured at tip of lead
Revision: 19-Oct-2020
Document Number: 91365
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
VERSION 2: FACILITY CODE = N
A
E
A
E3
B
D
D1
D2
E2
Q
A2
L1
F
F
H
H
C
G
L
G
A1
e
b
3x
0.25 M B A M
b1
C
b3
E4
E1
b’, b2, b4
C
C’
Base metal
b, b1, b3
Plating
SECTION "F-F", "G-G" AND "H-H"
SCALE: NONE
MILLIMETERS
MILLIMETERS
DIM.
MIN.
MAX.
DIM.
MIN.
MAX.
A
4.83
5.21
D1
16.25
17.65
A1
2.29
2.54
D2
0.50
0.80
A2
1.91
2.16
E
15.75
16.13
b’
1.07
1.28
E1
13.10
14.15
b
1.07
1.33
E2
3.68
5.10
b1
1.91
2.41
E3
1.00
1.90
b2
1.91
2.16
E4
12.38
13.43
b3
2.87
3.38
e
b4
2.87
3.13
N
c’
0.55
0.65
L
19.81
c
0.55
0.68
L1
3.70
4.00
D
20.80
21.10
Q
5.49
6.00
5.44 BSC
3
20.32
ECN: E20-0538-Rev. C, 19-Oct-2020
DWG: 5975
Notes
• Dimensioning and tolerancing per ASME Y14.5M-1994
• Outline conforms to JEDEC® outline to TO-274AD
• Dimensions are measured in mm, angles are in degree
• Metal surfaces are tin plated, except area of cut
Revision: 19-Oct-2020
Document Number: 91365
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
1
Document Number: 91000
