SiHG33N60EF
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Vishay Siliconix
EF Series Power MOSFET with Fast Body Diode
FEATURES
PRODUCT SUMMARY
VDS (V) at TJ max.
• Fast body diode MOSFET using E series
technology
• Reduced trr, Qrr, and IRRM
• Low figure-of-merit (FOM): Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
650
RDS(on) max. at 25 °C ()
VGS = 10 V
0.098
Qg (Max.) (nC)
155
Qgs (nC)
22
Qgd (nC)
43
Configuration
Single
D
TO-247AC
APPLICATIONS
• Telecommunications
- Server and telecom power supplies
• Lighting
- High-intensity discharge (HID)
- Light emitting diodes (LEDs)
• Consumer and computing
- ATX power supplies
• Industrial
- Welding
- Battery chargers
• Renewable energy
- Solar (PV inverters)
• Switch mode power suppliers (SMPS)
• Applications using the following topologies
- LLC
- Phase shifted bridge (ZVS)
- 3-level inverter
- AC/DC bridge
G
S
D
S
G
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-247AC
Lead (Pb)-free and Halogen-free
SiHG33N60EF-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
± 30
Continuous Drain Current (TJ = 150 °C)
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Current (Typical) a
ID
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
TJ = 125 °C
Reverse Diode dV/dt d
Soldering Recommendations (Peak Temperature) c
for 10 s
V
33
21
A
IDM
100
2.2
W/°C
EAS
691
mJ
Linear Derating Factor
Single Pulse Avalanche Energy b
UNIT
PD
278
W
TJ, Tstg
-55 to +150
°C
dV/dt
70
50
300
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 7 A.
c. 1.6 mm from case.
d. ISD ID, dI/dt = 900 A/μs, starting TJ = 25 °C.
S17-0295-Rev. C, 27-Feb-17
Document Number: 91590
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THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
40
Maximum Junction-to-Case (Drain)
RthJC
-
0.45
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance a
VDS
VGS = 0 V, ID = 250 μA
600
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.72
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
VGS = ± 20 V
-
-
± 100
nA
μA
IGSS
IDSS
RDS(on)
gfs
VGS = ± 30 V
-
-
±1
VDS = 480 V, VGS = 0 V
-
-
1
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
-
500
-
0.085
0.098
-
12
-
S
VGS = 10 V
ID = 16.5 A
VDS = 30 V, ID = 16.5 A
μA
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
-
3454
-
Output Capacitance
Coss
VDS = 100 V,
-
154
-
Reverse Transfer Capacitance
Crss
f = 1 MHz
-
8
-
Effective Output Capacitance, Energy
Related b
Co(er)
-
121
-
Effective Output Capacitance, Time
Related c
Co(tr)
-
437
-
-
103
155
-
22
-
pF
VGS = 0 V, VDS = 0 V to 480 V
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
-
43
-
Turn-On Delay Time
td(on)
-
28
56
tr
VDD = 480 V, ID = 16.5 A
Rg = 9.1 , VGS = 10 V
-
43
86
-
161
242
-
48
96
f = 1 MHz, open drain
0.2
0.5
1.0
-
-
33
S
-
100
-
TJ = 25 °C, IS = 16.5 A, VGS = 0 V
-
0.9
1.2
V
-
162
324
ns
-
1.0
2.0
μC
-
13
-
A
Rise Time
Turn-Off Delay Time
td(off)
Fall Time
tf
Gate Input Resistance
Rg
VGS = 10 V
ID = 16.5 A, VDS = 480 V
nC
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Reverse Recovery Current
IRRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IF = IS = 16.5 A,
dI/dt = 100 A/μs, VR = 400 V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS.
c. Coss(tr) is a fixed capacitance that gives the charging time as Coss while VDS is rising from 0 % to 80 % VDS.
S17-0295-Rev. C, 27-Feb-17
Document Number: 91590
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.0
120
TOP
15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
BOTTOM 5 V
80
ID = 16.5 A
RDS(on), Drain-to-Source On-Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
TJ = 25 °C
60
40
20
2.5
2.0
1.5
1.0
VGS = 10 V
0.5
0
0
0
5
10
15
20
25
- 60 - 40 - 20
30
80
40
60
80 100 120 140 160
10 000
TOP
15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
BOTTOM 5 V
TJ = 150 °C
Ciss
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds shorted
Crss = Cgd
Coss = Cds + Cgd
1000
C, Capacitance (pF)
ID, Drain-to-Source Current (A)
20
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 1 - Typical Output Characteristics
60
0
TJ, Junction Temperature (°C)
VDS, Drain-to-Source Voltage (V)
40
20
Coss
100
Crss
10
0
1
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
30
0
100
200
300
400
500
VDS, Drain-to-Source Voltage (V)
600
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 2 - Typical Output Characteristics
25
120
5000
80
60
TJ = 150 °C
15
Eoss
Coss
500
10
Eoss (μJ)
20
Coss (pF)
ID, Drain-to-Source Current (A)
100
40
5
20
VDS = 26.4 V
50
0
0
5
10
15
20
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S17-0295-Rev. C, 27-Feb-17
25
0
0
100
200
300
VDS
400
500
600
Fig. 6 - Coss and Eoss vs. VDS
Document Number: 91590
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40
VDS = 480 V
VDS = 300 V
VDS = 120 V
20
30
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
24
16
12
8
20
10
4
0
0
0
40
80
120
160
Qg, Total Gate Charge (nC)
200
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
25
50
75
100
125
TC, Case Temperature (°C)
150
Fig. 10 - Maximum Drain Current vs. Case Temperature
750
VDS, Drain-to-Source Breakdown Voltage (V)
ISD, Reverse Drain Current (A)
100
TJ = 150 °C
10
TJ = 25 °C
1
VGS = 0 V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain Voltage (V)
1.4
1.6
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Operation in this Area
Limited by RDS(on)
ID, Drain Current (A)
100
725
700
675
650
625
600
575
ID = 250 μA
550
-60 -40 -20
0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 11 - Typical Drain-to-Source Voltage vs. Temperature
IDM Typical
10
Limited by RDS(on)*
100 μs
1
1 ms
TC = 25 °C
TJ = 150 °C
Single Pulse
10 ms
BVDSS Limited
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Fig. 9 - Maximum Safe Operating Area
S17-0295-Rev. C, 27-Feb-17
Document Number: 91590
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1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Pulse Time (s)
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
RD
VDS
VDS
tp
VGS
VDD
D.U.T.
RG
+
- VDD
VDS
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
IAS
Fig. 13 - Switching Time Test Circuit
Fig. 16 - Unclamped Inductive Waveforms
VDS
QG
10 V
90 %
QGS
10 %
VGS
QGD
VG
td(on)
td(off) tf
tr
Charge
Fig. 14 - Switching Time Waveforms
Fig. 17 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
L
Vary tp to obtain
required IAS
VDS
50 kΩ
D.U.T
RG
12 V
+
-
IAS
0.2 µF
0.3 µF
V DD
+
D.U.T.
-
VDS
10 V
tp
0.01 Ω
VGS
3 mA
Fig. 15 - Unclamped Inductive Test Circuit
IG
ID
Current sampling resistors
Fig. 18 - Gate Charge Test Circuit
S17-0295-Rev. C, 27-Feb-17
Document Number: 91590
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SiHG33N60EF
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Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 19 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91590.
S17-0295-Rev. C, 27-Feb-17
Document Number: 91590
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-247AC (High Voltage)
VERSION 1: FACILITY CODE = 9
MILLIMETERS
DIM.
MIN.
MAX.
A
4.83
A1
2.29
MILLIMETERS
NOTES
DIM.
MIN.
MAX.
NOTES
5.21
D1
16.25
16.85
5
2.55
D2
0.56
0.76
A2
1.50
2.49
E
15.50
15.87
b
1.12
1.33
E1
13.46
14.16
5
b1
1.12
1.28
E2
4.52
5.49
3
b2
1.91
2.39
b3
1.91
2.34
b4
2.87
3.22
b5
2.87
3.18
c
0.55
0.69
c1
0.55
0.65
D
20.40
20.70
4
6
e
L
14.90
15.40
6, 8
L1
3.96
4.16
6
ØP
3.56
3.65
7
6
4
5.44 BSC
Ø P1
7.19 ref.
Q
5.31
5.69
S
5.54
5.74
Notes
(1) Package reference: JEDEC® TO247, variation AC
(2) All dimensions are in mm
(3) Slot required, notch may be rounded
(4) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the
outermost extremes of the plastic body
(5) Thermal pad contour optional with dimensions D1 and E1
(6) Lead finish uncontrolled in L1
(7) Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
(8) Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4
dimension at maximum material condition
Revision: 19-Oct-2020
Document Number: 91360
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
VERSION 2: FACILITY CODE = Y
A
A
4
E
B
3 R/2
E/2
7 ØP
Ø k M DBM
A2
S
(Datum B)
ØP1
A
D2
Q
4
4
2xR
(2)
D1
D
1
2
4
D
3
Thermal pad
5 L1
C
L
See view B
2 x b2
3xb
0.10 M C A M
4
E1
A
0.01 M D B M
View A - A
C
2x e
A1
b4
(b1, b3, b5)
Planting
Lead Assignments
1. Gate
2. Drain
3. Source
4. Drain
D DE
Base metal
E
C
(c)
C
c1
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
DIM.
MIN.
MAX.
A
4.58
5.31
MILLIMETERS
NOTES
DIM.
MIN.
MAX.
D2
0.51
1.30
15.87
A1
2.21
2.59
E
15.29
A2
1.17
2.49
E1
13.72
b
0.99
1.40
e
5.46 BSC
b1
0.99
1.35
Øk
b2
1.53
2.39
L
14.20
16.25
b3
1.65
2.37
L1
3.71
4.29
b4
2.42
3.43
ØP
3.51
3.66
b5
2.59
3.38
Ø P1
-
7.39
c
0.38
0.86
Q
5.31
5.69
4.52
c1
0.38
0.76
R
D
19.71
20.82
S
D1
13.08
-
NOTES
0.254
5.49
5.51 BSC
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 19-Oct-2020
Document Number: 91360
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VERSION 3: FACILITY CODE = N
A
E
R/2
D2
B
A
P
A2
D1
L1
D
D
K M D BM
R
S
Q
N
P1
b2
L
C
e
b
b4
C
E1
A1
0.01 M D B M
0.10 M C A M
b1, b3, b5
c
c1
Base metal
Plating
b, b2, b4
MILLIMETERS
MILLIMETERS
DIM.
MIN.
MAX.
DIM.
MIN.
A
4.65
5.31
D2
0.51
MAX.
1.35
A1
2.21
2.59
E
15.29
15.87
13.46
A2
1.17
1.37
E1
b
0.99
1.40
e
-
b1
0.99
1.35
k
b2
1.65
2.39
L
14.20
b3
1.65
2.34
L1
3.71
b4
2.59
3.43
N
b5
2.59
3.38
P
3.56
c
0.38
0.89
P1
-
7.39
c1
0.38
0.84
Q
5.31
5.69
D
19.71
20.70
R
4.52
D1
13.08
-
S
5.46 BSC
0.254
16.10
4.29
7.62 BSC
3.66
5.49
5.51 BSC
ECN: E20-0545-Rev. F, 19-Oct-2020
DWG: 5971
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Revision: 19-Oct-2020
Document Number: 91360
3
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Disclaimer
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