SiHG70N60AEF
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EF Series Power MOSFET With Fast Body Diode
FEATURES
D
• Fast body diode MOSFET using E series
technology
• Reduced trr, Qrr, and IRRM
• Low figure-of-merit (FOM) Ron x Qg
• Low switching losses due to reduced Qrr
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TO-247AC
G
S
D
S
G
N-Channel MOSFET
APPLICATIONS
• Telecommunications
- Server and telecom power supplies
• Lighting
- High-intensity lighting (HID)
- Light emitting diodes (LEDs)
• Consumer and computing
- ATX power supplies
• Industrial
- Welding
- Battery chargers
• Renewable energy
- Solar (PV inverters)
• Switching mode power supplies (SMPS)
• Applications using the following topologies
- LLC
- Phase shifted bridge (ZVS)
- 3-level inverter
- AC/DC bridge
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) typ. () at 25 °C
650
VGS = 10 V
Qg max. (nC)
0.0355
410
Qgs (nC)
38
Qgd (nC)
99
Configuration
Single
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
TO-247AC
SiHG70N60AEF-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Gate-source voltage AC (f > 1 Hz)
Continuous drain current (TJ = 150 °C)
SYMBOL
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
current a
Pulsed drain
Linear derating factor
Single pulse avalanche energy b
Maximum power dissipation
Operating junction and storage temperature range
Drain-source voltage slope
Reverse diode dv/dt d
Soldering recommendations (peak temperature) c
ID
IDM
EAS
PD
TJ, Tstg
TJ = 125 °C
For 10 s
dv/dt
LIMIT
600
± 20
30
60
38
173
3.3
1019
417
-55 to +150
70
50
300
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 8.5 A
c. 1.6 mm from case
d. ISD = 35 A, di/dt = 300 A/μs, VDS = 400 V
S17-1315-Rev. A, 21-Aug-17
Document Number: 91997
1
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THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum junction-to-ambient
RthJA
-
40
Maximum junction-to-case (drain)
RthJC
-
0.3
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
VDS temperature coefficient
Gate-source threshold voltage (N)
VDS
VGS = 0 V, ID = 250 μA
600
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.62
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2
-
4
V
Gate-source leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
VDS = 480 V, VGS = 0 V
-
-
1
μA
Drain-source on-state resistance
Forward transconductance a
RDS(on)
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 35 A
-
-
2
mA
-
0.0355
0.041
S
gfs
VDS = 30 V, ID = 35 A
-
23
-
Input capacitance
Ciss
5348
-
Coss
-
238
-
Reverse transfer capacitance
Crss
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
-
Output capacitance
-
7
-
Effective output capacitance, energy
related a
Co(er)
-
159
-
Effective output capacitance, time
related b
Co(tr)
-
810
-
Dynamic
pF
VDS = 0 V to 480 V, VGS = 0 V
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Turn-on delay time
td(on)
Rise time
Turn-off delay time
tr
td(off)
Fall time
tf
Gate input resistance
Rg
VGS = 10 V
ID = 35 A, VDS = 480 V
-
205
410
-
38
-
-
99
-
-
45
90
VDD = 480 V, ID = 35 A,
VGS = 10 V, Rg = 9.1
-
104
208
-
219
438
-
113
226
f = 1 MHz, open drain
0.5
1.0
2.0
-
-
60
-
-
173
nC
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulsed diode forward current
ISM
Diode forward voltage
VSD
Reverse recovery time
trr
Reverse recovery charge
Qrr
Reverse recovery current
IRRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IS = 35 A, VGS = 0 V
TJ = 25 °C, IF = IS = 35 A,
di/dt = 100 A/μs, VR = 400 V
S
-
0.9
1.2
V
-
184
368
ns
-
1.6
3.2
μC
-
16
-
A
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS
S17-1315-Rev. A, 21-Aug-17
Document Number: 91997
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.0
200
15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
BOTTOM 5 V
150
ID = 35 A
TJ = 25 °C
RDS(on), Drain-to-Source On-Resistance
(Normalized)
100
50
0
2.5
2.0
1.5
1.0
VGS = 10 V
0.5
0
0
5
10
15
-60 -40 -20
20
VDS, Drain-to-Source Voltage (V)
40
60
80 100 120 140 160
Fig. 4 - Normalized On-Resistance vs. Temperature
150
100 000
TOP
15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
BOTTOM 5 V
TJ = 150 °C
Ciss
10 000
C, Capacitance (pF)
ID, Drain-to-Source Current (A)
20
TJ, Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics
100
0
50
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds shorted
Crss = Cgd
Coss = Cds + Cgd
1000
Coss
100
Crss
10
1
0
0.1
0
5
10
15
20
0
100
200
300
400
500
600
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 2 - Typical Output Characteristics
200
35
150
30
TJ = 25 °C
25
TJ = 150 °C
Coss (pF)
ID, Drain-to-Source Current (A)
5000
100
20
Eoss
Coss
500
15
Eoss (μJ)
ID, Drain-to-Source Current (A)
TOP
10
50
VDS = 19.8 V
5
0
0
5
10
15
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S17-1315-Rev. A, 21-Aug-17
20
50
0
0
100
200
300
VDS
400
500
600
Fig. 6 - Coss and Eoss vs. VDS
Document Number: 91997
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60
VDS = 480 V
VDS = 300 V
VDS = 120 V
10
50
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
12
8
6
4
2
40
30
20
10
0
0
0
60
120
180
240
25
50
Qg, Total Gate Charge (nC)
75
100
125
150
TC, Case Temperature (°C)
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 10 - Maximum Drain Current vs. Case Temperature
VDS, Drain-to-Source Breakdown Voltage (V)
825
ISD, Reverse Drain Current (A)
100
TJ = 150 °C
10
TJ = 25 °C
1
VGS = 0 V
0.1
800
775
750
725
700
675
ID = 20 mA
650
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain Voltage (V)
0
20
40
60
80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Operation in this Area
Limited by RDS(on)
-60 -40 -20
Fig. 11 - Temperature vs. Drain-to-Source Voltage
IDM Limited
100
ID, Drain Current (A)
BVDSS Limited
Limited by RDS(on)*
10
100 μs
1 ms
1
TC = 25 °C
TJ = 150 °C
Single Pulse
10 ms
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Fig. 9 - Maximum Safe Operating Area
S17-1315-Rev. A, 21-Aug-17
Document Number: 91997
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1
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single pulse
0.01
0.0001
0.001
0.01
0.1
1
Pulse Time (s)
Fig. 12 - Normalized Transient Thermal Impedance, Junction-to-Case
RD
VDS
VDS
tp
VGS
D.U.T.
VDD
Rg
+
- VDD
VDS
10 V
Pulse width ≤ 1 μs
Duty factor ≤ 0.1 %
IAS
Fig. 13 - Switching Time Test Circuit
Fig. 16 - Unclamped Inductive Waveforms
VDS
Qg
10 V
90 %
Qgs
10 %
VGS
Qgd
VG
td(on)
td(off)
tr
tf
Charge
Fig. 17 - Basic Gate Charge Waveform
Fig. 14 - Switching Time Waveforms
Current regulator
Same type as D.U.T.
L
VDS
Vary tp to obtain
required IAS
50 kΩ
12 V
D.U.T.
Rg
0.2 μF
0.3 μF
+
- VDD
+
D.U.T.
IAS
-
VDS
10 V
tp
0.01 Ω
VGS
3 mA
Fig. 15 - Unclamped Inductive Test Circuit
IG
ID
Current sampling resistors
Fig. 18 - Gate Charge Test Circuit
S17-1315-Rev. A, 21-Aug-17
Document Number: 91997
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SiHG70N60AEF
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Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
3
+
2
-
-
4
+
1
Rg
•
•
•
•
1 Driver gate drive
Period
P.W.
+
V
- DD
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
D=
P.W.
Period
V GS = 10 V a
2
D.U.T. ISD waveform
Reverse
recovery
current
3 D.U.T. VDS
Body diode forward
current
dI/dt
waveform
Diode recovery
dV/dt
Re-applied
voltage
V DD
Body diode forward drop
4 Inductor current
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 19 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91997.
S17-1315-Rev. A, 21-Aug-17
Document Number: 91997
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Package Information
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TO-247AC (High Voltage)
VERSION 1: FACILITY CODE = 9
MILLIMETERS
DIM.
MIN.
MAX.
A
4.83
A1
2.29
MILLIMETERS
NOTES
DIM.
MIN.
MAX.
NOTES
5.21
D1
16.25
16.85
5
2.55
D2
0.56
0.76
A2
1.50
2.49
E
15.50
15.87
b
1.12
1.33
E1
13.46
14.16
5
b1
1.12
1.28
E2
4.52
5.49
3
b2
1.91
2.39
b3
1.91
2.34
b4
2.87
3.22
b5
2.87
3.18
c
0.55
0.69
c1
0.55
0.65
D
20.40
20.70
4
6
e
L
14.90
15.40
6, 8
L1
3.96
4.16
6
ØP
3.56
3.65
7
6
4
5.44 BSC
Ø P1
7.19 ref.
Q
5.31
5.69
S
5.54
5.74
Notes
(1) Package reference: JEDEC® TO247, variation AC
(2) All dimensions are in mm
(3) Slot required, notch may be rounded
(4) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the
outermost extremes of the plastic body
(5) Thermal pad contour optional with dimensions D1 and E1
(6) Lead finish uncontrolled in L1
(7) Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
(8) Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4
dimension at maximum material condition
Revision: 19-Oct-2020
Document Number: 91360
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VERSION 2: FACILITY CODE = Y
A
A
4
E
B
3 R/2
E/2
7 ØP
Ø k M DBM
A2
S
(Datum B)
ØP1
A
D2
Q
4
4
2xR
(2)
D1
D
1
2
4
D
3
Thermal pad
5 L1
C
L
See view B
2 x b2
3xb
0.10 M C A M
4
E1
A
0.01 M D B M
View A - A
C
2x e
A1
b4
(b1, b3, b5)
Planting
Lead Assignments
1. Gate
2. Drain
3. Source
4. Drain
D DE
Base metal
E
C
(c)
C
c1
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
DIM.
MIN.
MAX.
A
4.58
5.31
MILLIMETERS
NOTES
DIM.
MIN.
MAX.
D2
0.51
1.30
15.87
A1
2.21
2.59
E
15.29
A2
1.17
2.49
E1
13.72
b
0.99
1.40
e
5.46 BSC
b1
0.99
1.35
Øk
b2
1.53
2.39
L
14.20
16.25
b3
1.65
2.37
L1
3.71
4.29
b4
2.42
3.43
ØP
3.51
3.66
b5
2.59
3.38
Ø P1
-
7.39
c
0.38
0.86
Q
5.31
5.69
4.52
c1
0.38
0.76
R
D
19.71
20.82
S
D1
13.08
-
NOTES
0.254
5.49
5.51 BSC
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 19-Oct-2020
Document Number: 91360
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VERSION 3: FACILITY CODE = N
A
E
R/2
D2
B
A
P
A2
D1
L1
D
D
K M D BM
R
S
Q
N
P1
b2
L
C
e
b
b4
C
E1
A1
0.01 M D B M
0.10 M C A M
b1, b3, b5
c
c1
Base metal
Plating
b, b2, b4
MILLIMETERS
MILLIMETERS
DIM.
MIN.
MAX.
DIM.
MIN.
A
4.65
5.31
D2
0.51
MAX.
1.35
A1
2.21
2.59
E
15.29
15.87
13.46
A2
1.17
1.37
E1
b
0.99
1.40
e
-
b1
0.99
1.35
k
b2
1.65
2.39
L
14.20
b3
1.65
2.34
L1
3.71
b4
2.59
3.43
N
b5
2.59
3.38
P
3.56
c
0.38
0.89
P1
-
7.39
c1
0.38
0.84
Q
5.31
5.69
D
19.71
20.70
R
4.52
D1
13.08
-
S
5.46 BSC
0.254
16.10
4.29
7.62 BSC
3.66
5.49
5.51 BSC
ECN: E20-0545-Rev. F, 19-Oct-2020
DWG: 5971
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Revision: 19-Oct-2020
Document Number: 91360
3
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Disclaimer
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