SiHH100N60E
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Vishay Siliconix
E Series Power MOSFET
FEATURES
Pin 4: drain
• 4th generation E series technology
PowerPAK® 8 x 8
• Low figure-of-merit (FOM) Ron x Qg
• Low effective capacitance (Co(er))
Pin 1:
gate
4
1
2
• Reduced switching and conduction losses
• Avalanche energy rated (UIS)
Pin 2:
Kelvin connection
3
• Kelvin connection for reduced gate noise
Pin 3: source
3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
N-Channel MOSFET
APPLICATIONS
•
•
•
•
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Solar (PV inverters)
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) typ. () at 25 °C
650
VGS = 10 V
Qg max. (nC)
0.085
53
Qgs (nC)
11
Qgd (nC)
13
Configuration
Single
ORDERING INFORMATION
Package
PowerPAK 8 x 8
Lead (Pb)-free and halogen-free
SiHH100N60E-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
600
Gate-source voltage
VGS
± 30
Continuous drain current (TJ = 150 °C)
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed drain current a
ID
IDM
Linear derating factor
Single pulse avalanche energy b
EAS
Maximum power dissipation
Operating junction and storage temperature range
Drain-source voltage slope
TJ = 125 °C
Reverse diode dv/dt c
UNIT
V
28
18
A
63
1.38
W/°C
127
mJ
PD
174
W
TJ, Tstg
-55 to +150
°C
dv/dt
100
50
V/ns
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 3.0 A
c. ISD ID, di/dt = 120 A/μs, starting TJ = 25 °C
S20-0341-Rev. C, 11-May-2020
Document Number: 92126
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For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHH100N60E
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Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum junction-to-ambient
RthJA
40
42
Maximum junction-to-case (drain)
RthJC
0.55
0.72
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
VDS temperature coefficient
Gate-source threshold voltage (N)
Gate-source leakage
Zero gate voltage drain current
VDS
VGS = 0 V, ID = 250 μA
600
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.55
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
3.0
-
5.0
V
VGS = ± 20 V
-
-
± 100
nA
VGS = ± 30 V
-
-
±1
μA
VDS = 600 V, VGS = 0 V
-
-
1
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
-
10
IGSS
IDSS
μA
-
0.085
0.100
gfs
VDS = 8 V, ID = 13.5 A
-
12
-
S
Input capacitance
Ciss
-
1850
-
Output capacitance
Coss
-
83
-
Reverse transfer capacitance
Crss
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
-
6
-
Effective output capacitance, energy
related a
Co(er)
-
64
-
Effective output capacitance, time
related b
Co(tr)
-
410
-
-
35
53
-
11
-
-
13
-
Drain-source on-state resistance
Forward transconductance a
RDS(on)
VGS = 10 V
ID = 13.5 A
Dynamic
pF
VDS = 0 V to 480 V, VGS = 0 V
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Turn-on delay time
td(on)
Rise time
Turn-off delay time
tr
td(off)
Fall time
tf
Gate input resistance
Rg
VGS = 10 V
ID = 13.5 A, VDS = 480 V
-
26
52
VDD = 480 V, ID = 13.5 A,
VGS = 10 V, Rg = 9.1
-
54
81
-
41
82
-
41
82
f = 1 MHz, open drain
0.3
0.6
1.2
-
-
28
nC
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulsed diode forward current
ISM
Diode forward voltage
VSD
Reverse recovery time
trr
Reverse recovery charge
Qrr
Reverse recovery current
IRRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
-
-
63
TJ = 25 °C, IS = 13.5 A, VGS = 0 V
-
-
1.2
-
345
690
ns
-
5.0
10
μC
-
24
-
A
TJ = 25 °C, IF = IS = 13.5 A,
di/dt = 100 A/μs, VR = 25 V
V
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS
S20-0341-Rev. C, 11-May-2020
Document Number: 92126
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For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHH100N60E
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
1000
8V
40
7V
100
20
6V
5V
2.5
1.5
VGS = 10 V
0.5
5
10
15
10
0
20
-60 -40 -20 0
20 40 60 80 100 120 140 160
VDS - Drain-to-Source Voltage (V)
TJ - Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Axis Title
Axis Title
10000
15 V
14 V
13 V
12 V
11 V
10 V
40
TJ = 150 °C
10 000
Ciss
1000
8V
7V
30
100
20
6V
2nd line
C - Capacitance (pF)
50
10000
100 000
1st line
2nd line
2nd line
ID - Drain-to-Source Current (A)
60
10
1000
1000
Coss
100
Crss
10
100
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds shorted
Crss = Cgd
Coss = Cds + Cgd
1
5V
10
0
0
5
10
15
0.1
0
20
100
200
300
400
500
10
600
VDS - Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Axis Title
Axis Title
80
10000
TJ = 25 °C
60
1000
TJ = 150 °C
40
100
20
2nd line
Coss - Output Capacitance (pF)
14
1st line
2nd line
2nd line
ID - Drain-to-Source Current (A)
1st line
2nd line
0
100
1.0
10
0
1000
2.0
1st line
2nd line
9V
ID = 13.5 A
5000
12
10
8
Coss
Eoss
500
6
4
2
VDS = 28.3 V
10
0
0
5
10
15
20
0
50
0
100
200
300
400
500
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
Fig. 6 - Coss and Eoss vs. VDS
S20-0341-Rev. C, 11-May-2020
Eoss - Output Capacitance Stored Energy (µJ)
2nd line
60
RDS(on) - Drain-to-Source On-Resistance
(Normalized)
TJ = 25 °C
15 V
14 V
13 V
12 V
11 V
10 V
10000
3.0
1st line
2nd line
2nd line
ID - Drain-to-Source Current (A)
80
600
Document Number: 92126
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHH100N60E
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Vishay Siliconix
Axis Title
Axis Title
10000
10000
30
VDS = 480 V
VDS = 300 V
VDS = 120 V
6
100
3
1000
18
1st line
2nd line
1000
2nd line
ID - Drain Current (A)
24
9
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
12
12
100
6
0
10
20
30
10
0
10
0
40
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TC - Case Temperature (°C)
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 10 - Maximum Drain Current vs. Case Temperature
Axis Title
1000
TJ = 25 °C
100
1
VGS = 0 V
10
0.1
0.2
0.6
1.0
1.4
1.8
10000
775
750
1000
725
1st line
2nd line
TJ = 150 °C
10
1st line
2nd line
2nd line
ISD - Reverse Drain Current (A)
100
2nd line
VDS - Drain-to-Source Breakdown Voltage (V)
Axis Title
10000
700
100
675
650
ID = 1 mA
10
625
-60 -40 -20 0
20 40 60 80 100 120 140 160
VSD - Source-Drain Voltage (V)
TJ - Junction Temperature (°C)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Fig. 11 - Temperature vs. Drain-to-Source Voltage
Axis Title
10000
1000
Operation in this area
limited by RDS(on)
IDM limited
1000
10
Limited by RDS(on)
a
100 µs
1
1st line
2nd line
2nd line
ID - Drain Current (A)
100
1 ms100
0.1
TC = 25 °C,
TJ = 150 °C,
single pulse
10 ms
BVDSS limited
0.01
1
10
100
10
1000
VDS - Drain-to-Source Voltage (V)
Fig. 9 - Maximum Safe Operating Area
Note
a. VGS > minimum VGS at which RDS(on) is specified
S20-0341-Rev. C, 11-May-2020
Document Number: 92126
4
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHH100N60E
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Vishay Siliconix
Axis Title
1
10000
0.2
1000
0.1
0.1
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.05
0.02
100
Single pulse
10
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Time (s)
Fig. 12 - Normalized Transient Thermal Impedance, Junction-to-Case
Axis Title
1
10000
Duty cycle = 0.5
0.1
1000
0.05
1st line
2nd line
RthJA - Normalized Thermal
Transient Impedance
0.2
0.1
0.02
0.01
Single pulse
100
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
10
1000
100
Pulse Time (s)
Fig. 13 - Normalized Thermal Transient Impedance, Junction-to-Ambient
VDS
VGS
Rg
RD
VDS
90 %
D.U.T.
+
- VDD
10 V
Pulse width ≤ 1 μs
Duty factor ≤ 0.1 %
10 %
VGS
td(on)
tr
td(off)
tf
Fig. 15 - Switching Time Waveforms
Fig. 14 - Switching Time Test Circuit
S20-0341-Rev. C, 11-May-2020
Document Number: 92126
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHH100N60E
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Vishay Siliconix
L
VDS
Vary tp to obtain
required IAS
D.U.T.
Rg
+
- VDD
IAS
10 V
tp
0.01 Ω
Fig. 16 - Unclamped Inductive Test Circuit
VDS
tp
VDD
VDS
IAS
Fig. 17 - Unclamped Inductive Waveforms
Qg
10 V
Qgs
Qgd
VG
Charge
Fig. 18 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
50 kΩ
12 V
0.2 μF
0.3 μF
+
D.U.T.
-
VDS
VGS
3 mA
IG
ID
Current sampling resistors
Fig. 19 - Gate Charge Test Circuit
S20-0341-Rev. C, 11-May-2020
Document Number: 92126
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHH100N60E
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Vishay Siliconix
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
3
+
2
-
-
4
+
1
Rg
•
•
•
•
1 Driver gate drive
Period
P.W.
+
V
- DD
dv/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
D=
P.W.
Period
V GS = 10 V a
2
D.U.T. ISD waveform
Reverse
recovery
current
3 D.U.T. VDS
Body diode forward
current
di/dt
waveform
Diode recovery
dv/dt
Re-applied
voltage
V DD
Body diode forward drop
4 Inductor current
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 20 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?92126.
S20-0341-Rev. C, 11-May-2020
Document Number: 92126
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
PowerPAK® 8 x 8 Case Outline
D2
D3
2x
E3
0.1 C A
D
A
2x
0.1 C B
K
E
E2
PPAK 8 x 8
(8 mm x 8 mm)
L
B
e
Pin 1 dot 5, 6
by marking
TOP SIDE VIEW
b
0.08 C
A1
DIM.
A2
A
BACK SIDE VIEW
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.95
1.00
1.05
0.037
0.039
0.041
A1
0.00
-
0.05
0.000
-
0.002
A2
020 ref.
0.008 ref.
b
0.95
1.00
1.05
0.037
0.039
0.041
D
7.90
8.00
8.10
0.311
0.315
0.319
D2
7.10
7.20
7.30
0.280
0.283
0.287
D3
0.40 BSC
e
0.016 BSC
2.00 BSC
0.079 BSC
E
7.90
8.00
8.10
0.311
0.315
0.319
E2
4.30
4.35
4.40
0.169
0.171
0.173
E3
0.40 BSC
K
L
0.016 BSC
2.75 BSC
0.45
N (3)
0.50
0.108 BSC
0.55
8
0.018
0.020
0.022
8
Notes
(1) Use millimeters as the primary measurement
(2) Dimensioning and tolerances conform to ASME Y14.5 M - 1994
(3) N is the number of terminals
(4) The pin 1 identifier must be existed on the top surface of the package by using indentation mark or other feature of package body
(5) Exact shape and size of this feature is optional
ECN: E20-0518-Rev. B, 28-Sep-2020
DWG: 6041
Revision: 28-Sep-2020
1
Document Number: 67859
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
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Vishay Siliconix
Recommended Minimum PADs for PowerPAK® 8 mm x 8 mm
8.3
7.3
0.68
4.45
0.4
2.65
0.37
0.7
1.1
2
Dimensions in millimeters
Revision: 07-Apr-16
Document Number: 68441
1
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Legal Disclaimer Notice
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 09-Jul-2021
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Document Number: 91000
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