SIHK185N60E-T1-GE3

SiHK185N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PowerPAK® 10 x 12 • 4th generation E series technology Drain tab • Low figure-of-merit (FOM) Ron x Qg TAB • Low effective capacitance (Co(er)) • Reduced switching and conduction losses Gate pin 1 1 2 3 4 5 6 7 • Avalanche energy rated (UIS) Driver source pin 2 Source pin 3 to 8 8 • Kelvin connection for reduced gate noise • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 N-Channel MOSFET APPLICATIONS • • • • Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial - Welding - Induction heating - Motor drives - Battery chargers - Solar (PV inverters) PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C 650 VGS = 10 V 0.160 Qg max. (nC) 33 Qgs (nC) 7 Qgd (nC) Configuration 11 Single ORDERING INFORMATION Package PowerPAK 10 x 12 Lead (Pb)-free and halogen-free SiHK185N60E-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 600 Gate-source voltage VGS ± 30 Continuous drain current (TJ = 150 °C) VGS at 10 V TC = 25 °C TC = 100 °C Pulsed drain current a ID IDM Linear derating factor Single pulse avalanche energy b EAS Maximum power dissipation Operating junction and storage temperature range Drain-source voltage slope TJ = 125 °C Reverse diode dv/dt c UNIT V 19 12 A 44 0.9 W/°C 75 mJ PD 114 W TJ, Tstg -55 to +150 °C dv/dt 100 22 V/ns Notes a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 2.3 A c. ISD  ID, di/dt = 100 A/μs, starting TJ = 25 °C S22-0755-Rev. C, 29-Aug-2022 Document Number: 92433 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHK185N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum junction-to-ambient RthJA - 50 a Maximum junction-to-case (drain) RthJC - 1.1 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage (N) Gate-source leakage Zero gate voltage drain current VDS VGS = 0 V, ID = 250 μA 600 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.63 - V/°C VGS(th) VDS = VGS, ID = 250 μA 3.0 - 5.0 V VGS = ± 20 V - - ± 100 nA VGS = ± 30 V - - ±1 μA VDS = 600 V, VGS = 0 V - - 1 VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 10 IGSS IDSS μA - 0.160 0.185  gfs VDS = 20 V, ID = 9.5 A - 5.3 - S Input capacitance Ciss - 1085 - Output capacitance Coss - 56 - Reverse transfer capacitance Crss VGS = 0 V, VDS = 100 V, f = 1 MHz - 5 - Effective output capacitance, energy related b Co(er) - 59 - Effective output capacitance, time  related c Co(tr) - 301 - - 22 33 - 7 - - 11 - Drain-source on-state resistance Forward transconductance b RDS(on) VGS = 10 V ID = 9.5 A Dynamic pF VDS = 0 V to 400 V, VGS = 0 V Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Rise time Turn-off delay time tr td(off) Fall time tf Gate input resistance Rg VGS = 10 V ID = 9.5 A, VDS = 480 V - 14 28 VDD = 480 V, ID = 9.5 A, VGS = 10 V, Rg = 9.1  - 49 98 - 22 44 - 23 46 f = 1 MHz 0.3 0.7 1.4 - - 19 nC ns  Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulsed diode forward current ISM Diode forward voltage VSD Reverse recovery time trr Reverse recovery charge Qrr Reverse recovery current IRRM MOSFET symbol showing the  integral reverse p - n junction diode D A G TJ = 25 °C, IS = 9.5 A, VGS = 0 V TJ = 25 °C, IF = IS = 9.5 A, di/dt = 100 A/μs, VR = 25 V S - - 44 - - 1.2 - 282 564 ns - 3.6 7.2 μC - 24 - A V Notes a. When mounted on 1" x 1" FR4 board b. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 V to 400 V c. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 V to 400 V S22-0755-Rev. C, 29-Aug-2022 Document Number: 92433 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHK185N60E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.0 45 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V 35 30 25 ID = 9.5 A RDS(on), Drain-to-Source On-Resistance (Normalized) ID, Drain-to-Source Current (A) 40 TJ = 25 °C 20 15 10 5 0 2.0 1.5 1.0 VGS = 10 V 0.5 0 0 5 10 15 VDS, Drain-to-Source Voltage (V) -60 -40 -20 20 Fig. 1 - Typical Output Characteristics 100 000 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V 24 20 TJ = 150 °C VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds shorted Crss = Cgd Coss = Cds + Cgd 10 000 C, Capacitance (pF) 28 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature 32 ID, Drain-to-Source Current (A) 2.5 16 12 Ciss 1000 100 Coss 10 Crss 8 4 0 1 5 10 15 VDS, Drain-to-Source Voltage (V) 20 Fig. 2 - Typical Output Characteristics 0 100 200 300 400 500 VDS, Drain-to-Source Voltage (V) 600 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 10 000 45 9 8 40 Coss, Output Capacitance (pF) ID, Drain-to-Source Current (A) TJ = 25 °C 35 30 TJ = 150 °C 25 20 15 10 7 1000 6 5 Eoss 4 100 3 Coss 2 1 5 VDS = 29.5 V 10 0 0 5 10 15 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S22-0755-Rev. C, 29-Aug-2022 20 0 0 100 200 300 400 500 Eoss, Output Capacitance Stored Energy (μJ) 0 600 VDS, Drain-to-Source Voltage (V) Fig. 6 - Coss and Eoss vs. VDS Document Number: 92433 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHK185N60E www.vishay.com Vishay Siliconix 20 12 16 9 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) VDS = 480 V VDS = 300 V VDS = 120 V 6 8 3 4 0 0 0 7 14 21 Qg, Total Gate Charge (nC) 25 28 Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage 50 75 100 125 TC, Case Temperature (°C) 150 Fig. 10 - Maximum Drain Current vs. Case Temperature 100 775 VDS, Drain-to-Source Breakdown Voltage (V) ISD, Reverse Drain Current (A) 12 TJ = 150 °C 10 TJ = 25 °C 1 VGS = 0 V 0.1 0.2 0.4 0.6 0.8 1.0 VSD, Source-Drain Voltage (V) 1.2 1.4 Fig. 8 - Typical Source-Drain Diode Forward Voltage 750 725 700 675 650 ID = 250 μA 625 600 575 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 11 - Temperature vs. Drain-to-Source Voltage 1000 ID, Drain Current (A) 100 Operation in this area limited by RDS(on) IDM limited 10 100 μs Limited by RDS(on)a 1 1 ms TC = 25 °C, TJ = 150 °C, single pulse 0.1 10 ms BVDSS limited 0.01 1 10 100 VDS, Drain-to-Source Voltage (V) 1000 Fig. 9 - Maximum Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified S22-0755-Rev. C, 29-Aug-2022 Document Number: 92433 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHK185N60E www.vishay.com Vishay Siliconix 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse 0.01 0.000001 0.00001 0.0001 0.001 Pulse Time (s) 0.01 0.1 1 Fig. 12 - Normalized Transient Thermal Impedance, Junction-to-Case RD VDS VDS tp VGS D.U.T. VDD Rg + - VDD VDS 10 V Pulse width ≤ 1 μs Duty factor ≤ 0.1 % IAS Fig. 16 - Unclamped Inductive Waveforms Fig. 13 - Switching Time Test Circuit Qg 10 V VDS 90 % Qgs Qgd VG 10 % VGS td(on) td(off) tr Charge tf Fig. 17 - Basic Gate Charge Waveform Fig. 14 - Switching Time Waveforms Current regulator Same type as D.U.T. L VDS Vary tp to obtain required IAS 50 kΩ D.U.T. Rg 12 V 0.2 μF + - VDD 0.3 μF + IAS D.U.T. - VDS 10 V tp 0.01 Ω VGS 3 mA Fig. 15 - Unclamped Inductive Test Circuit IG ID Current sampling resistors Fig. 18 - Gate Charge Test Circuit S22-0755-Rev. C, 29-Aug-2022 Document Number: 92433 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHK185N60E www.vishay.com Vishay Siliconix Peak Diode Recovery dv/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer 3 + 2 - - 4 + 1 Rg • • • • 1 Driver gate drive Period P.W. + V - DD dv/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test D= P.W. Period V GS = 10 V a 2 D.U.T. ISD waveform Reverse recovery current 3 D.U.T. VDS Body diode forward current di/dt waveform Diode recovery dv/dt Re-applied voltage V DD Body diode forward drop 4 Inductor current Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 19 - For N-Channel  Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?92433. S22-0755-Rev. C, 29-Aug-2022 Document Number: 92433 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Land Pattern PowerPAK® 10 x 12 (TOLL) (High Voltage) 9.90 4.30 2x 1.30 3x 0.85 1.40 6.18 12.88 8.20 3.05 0.55 2.25 1.20 7x 1 2 pitch 0.90 8x Note • Dimensions in mm ECN: S22-1061-Rev. C, 26-Dec-2022 DWG: 3013 Revision: 26-Dec-2022 Document Number: 92489 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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