SIHP21N80AEF-GE3

SiHP21N80AEF www.vishay.com Vishay Siliconix EF Series Power MOSFET With Fast Body Diode FEATURES D • Low figure-of-merit (FOM) Ron x Qg TO-220AB • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) G G D • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S S APPLICATIONS N-Channel MOSFET • Server and telecom power supplies • Switch mode power supplies (SMPS) PRODUCT SUMMARY • Power factor correction power supplies (PFC) VDS (V) at TJ max. RDS(on) typ. (Ω) at 25 °C 850 VGS = 10 V Qg max. (nC) 71 Qgs (nC) 10 Qgd (nC) Configuration • Lighting 0.220 - High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial 21 - Welding Single - Induction heating - Motor drives - Battery chargers - Solar (PV inverters) ORDERING INFORMATION Package TO-220AB Lead (Pb)-free and halogen-free SIHP21N80AEF-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 800 Gate-source voltage VGS ± 30 Continuous drain current (TJ = 150 °C) VGS at 10 V TC = 25 °C TC = 100 °C Pulsed drain current a ID UNIT V 16.3 10.3 A IDM 37 1.4 W/°C Single pulse avalanche energy b EAS 127 mJ Maximum power dissipation PD 179 W TJ, Tstg -55 to +150 °C Linear derating factor Operating junction and storage temperature range Drain-source voltage slope TJ = 125 °C Reverse diode dv/dt d Soldering recommendations (peak temperature) c For 10 s dv/dt 100 50 260 V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 3.0 A c. 1.6 mm from case d. ISD ≤ ID, di/dt = 170 A/μs, starting TJ = 25 °C S21-1050-Rev. B, 01-Nov-2021 Document Number: 92389 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP21N80AEF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum junction-to-ambient RthJA - 62 Maximum junction-to-case (drain) RthJC - 0.7 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage (N) VDS VGS = 0 V, ID = 250 μA 800 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.8 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V VGS = ± 20 V - - ± 100 nA VGS = ± 30 V - - ±1 μA Gate-source leakage IGSS Zero gate voltage drain current IDSS VDS = 640 V, VGS = 0 V - - 1 μA VDS = 640 V, VGS = 0 V, TJ = 125 °C - - 2 mA - 0.220 0.250 Ω gfs VDS = 30 V, ID = 11 A - 8.7 - S Input capacitance Ciss 1511 - Coss - 58 - Reverse transfer capacitance Crss VGS = 0 V, VDS = 100 V, f = 1 MHz - Output capacitance - 5 - Effective output capacitance, energy related a Co(er) - 44 - Effective output capacitance, time related b Co(tr) - 271 - Drain-source on-state resistance Forward transconductance a RDS(on) VGS = 10 V ID = 8.5 A Dynamic pF VDS = 0 V to 480 V, VGS = 0 V Total gate charge Qg Gate-source charge Qgs VGS = 10 V ID = 11 A, VDS = 640 V - 47 71 - 10 - Gate-drain charge Qgd - 21 - Turn-on delay time td(on) - 18 36 VDD = 640 V, ID = 11 A, VGS = 10 V, Rg = 9.1 Ω - 28 56 - 44 88 - 43 86 f = 1 MHz, open drain 0.2 0.5 1.0 - - 16.3 - - 37 Rise time Turn-off delay time tr td(off) Fall time tf Gate input resistance Rg nC ns Ω Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulsed diode forward current ISM Diode forward voltage VSD Reverse recovery time trr Reverse recovery charge Qrr Reverse recovery current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = 11 A, VGS = 0 V TJ = 25 °C, IF = IS = 11 A, di/dt = 100 A/μs, VR = 400 V S - - 1.2 V - 128 256 ns - 0.8 1.6 μC - 12 - A Notes e. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 V to 480 V f. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 V to 480 V S21-1050-Rev. B, 01-Nov-2021 Document Number: 92389 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP21N80AEF www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 6V 100 10 5V 1.5 VGS = 10 V 0 5 10 15 100 1.0 0.5 10 0 10 0 1000 2.0 20 -60 -40 -20 0 20 40 60 80 100 120 140 160 VDS - Drain-to-Source Voltage (V) TJ - Junction Temperature (°C) Fig. 1 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Axis Title 15 V 14 V 13 V 12 V 11 V 10 V 9V 7V 10000 TJ = 150 °C Ciss 6V 1000 12 100 5V 6 1000 2nd line C - Capacitance (pF) 18 Axis Title 10 000 10000 1st line 2nd line 2nd line ID - Drain-to-Source Current (A) 24 5 10 15 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds shorted Crss = Cgd Coss = Cds + Cgd 100 100 Crss 10 1 20 0 100 200 300 400 500 600 VDS - Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Axis Title Axis Title TJ = 25 °C 30 1st line 2nd line 1000 20 TJ = 150 °C 100 10 12 10 000 10000 2nd line Coss - Output Capacitance (pF) 40 2nd line ID - Drain-to-Source Current (A) 1000 Coss 10 10 0 0 1st line 2nd line 1000 2.5 1st line 2nd line 20 7V ID = 11 A 9 1000 Coss 6 Eoss 100 3 VDS = 29.2 V 10 0 0 5 10 15 20 10 0 0 100 200 300 400 500 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 6 - Coss and Eoss vs. VDS S21-1050-Rev. B, 01-Nov-2021 Eoss - Output Capacitance Stored Energy (µJ) 2nd line 30 RDS(on) - Drain-to-Source On-Resistance (Normalized) TJ = 25 °C 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 10000 3.0 10000 1st line 2nd line 2nd line ID - Drain-to-Source Current (A) 40 600 Document Number: 92389 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP21N80AEF www.vishay.com Vishay Siliconix Axis Title Axis Title 20 10000 VDS = 640 V VDS = 400 V VDS = 160 V 6 100 3 15 1000 10 100 5 10 0 0 12 24 36 10000 1st line 2nd line 1000 2nd line ID - Drain Current (A) 9 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) 12 10 0 48 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TC - Case Temperature (°C) Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 10 - Maximum Drain Current vs. Case Temperature Axis Title 1000 TJ = 25 °C 1 100 VGS = 0 V 10 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.2 10000 1.1 1000 1 100 0.9 ID = 1mA 0.8 10 -60 -40 -20 0 1.4 1st line 2nd line TJ = 150 °C 1st line 2nd line 2nd line ISD - Reverse Drain Current (A) 10 2nd line VDS - Drain-to-Source Breakdown Voltage (Normalized) Axis Title 10000 20 40 60 80 100 120 140 160 VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) Fig. 8 - Typical Source-Drain Diode Forward Voltage Fig. 11 - Temperature vs. Drain-to-Source Voltage Axis Title 10000 Operation in this area limited by RDS(on) IDM limited BVDSS limited 10 1000 Limited by RDS(on) a 100 µs 1 1st line 2nd line 2nd line ID - Drain Current (A) 100 100 1 ms 0.1 TC = 25 °C, TJ = 150 °C, single pulse 10 ms 0.01 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) Fig. 9 - Maximum Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified S21-1050-Rev. B, 01-Nov-2021 Document Number: 92389 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP21N80AEF www.vishay.com Vishay Siliconix Axis Title 1 10000 0.2 1000 0.1 1st line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 0.05 100 0.02 Single pulse 10 0.01 0.0001 0.001 0.01 0.1 1 Pulse Time (s) Fig. 12 - Normalized Transient Thermal Impedance, Junction-to-Case RD VDS VDS tp VGS D.U.T. VDD Rg + - VDD VDS 10 V Pulse width ≤ 1 μs Duty factor ≤ 0.1 % IAS Fig. 13 - Switching Time Test Circuit Fig. 16 - Unclamped Inductive Waveforms VDS Qg 10 V 90 % Qgs 10 % VGS Qgd VG td(on) td(off) tr tf Charge Fig. 14 - Switching Time Waveforms Fig. 17 - Basic Gate Charge Waveform Current regulator Same type as D.U.T. L VDS Vary tp to obtain required IAS 50 kΩ D.U.T. Rg + - VDD 12 V 0.2 μF 0.3 μF + IAS D.U.T. - VDS 10 V tp 0.01 Ω VGS 3 mA Fig. 15 - Unclamped Inductive Test Circuit IG ID Current sampling resistors Fig. 18 - Gate Charge Test Circuit S21-1050-Rev. B, 01-Nov-2021 Document Number: 92389 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP21N80AEF www.vishay.com Vishay Siliconix Peak Diode Recovery dv/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer 3 + 2 - - 4 + 1 Rg • • • • 1 Driver gate drive Period P.W. + V - DD dv/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test D= P.W. Period V GS = 10 V a 2 D.U.T. ISD waveform Reverse recovery current 3 D.U.T. VDS Body diode forward current di/dt waveform Diode recovery dv/dt Re-applied voltage V DD Body diode forward drop 4 Inductor current Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 19 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?92389. S21-1050-Rev. B, 01-Nov-2021 Document Number: 92389 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) C b e J(1) e(1) MILLIMETERS DIM. INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 J(1) 2.41 2.92 0.095 0.115 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM Document Number: 66542 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 04-Nov-2021 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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