SIHP28N65EF-GE3

SiHP28N65EF www.vishay.com Vishay Siliconix E Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS (V) at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 700 RDS(on) typ. () at 25 °C VGS = 10 V 0.102 Qg max. (nC) 146 Qgs (nC) 21 Qgd (nC) 43 Configuration Single D TO-220AB APPLICATIONS • Telecommunications - Server and telecom power supplies • Lighting - High intensity discharge (HID) - Light emitting diodes (LEDs) • Consumer and computing - ATX power supplies • Industrial - Welding - Battery chargers • Renewable energy - Solar (PV inverters) • Switch mode power suppliers (SMPS) • Applications using the following topologies - LLC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge G G D S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB Lead (Pb)-free and halogen-free SiHP28N65EF-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 650 Gate-source voltage VGS ± 30 Continuous drain current (TJ = 150 °C) VGS at 10 V TC = 25 °C TC = 100 °C Pulsed drain current a ID UNIT V 28 18 A IDM 87 2 W/°C Single pulse avalanche energy b EAS 427 mJ Maximum power dissipation PD 250 W TJ, Tstg -55 to +150 °C Linear derating factor Operating junction and storage temperature range Drain-source voltage slope TJ = 125 °C Reverse diode dV/dt d Soldering recommendations (peak temperature) c for 10 s dV/dt 70 11 300 V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 5.5 A c. 1.6 mm from case d. ISD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C S18-0016-Rev. B, 15-Jan-18 Document Number: 91707 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP28N65EF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum junction-to-ambient RthJA - 62 Maximum junction-to-case (drain) RthJC - 0.5 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage (N) VDS VGS = 0 V, ID = 250 μA 650 - - V VDS/TJ Reference to 25 °C, ID = 10 mA - 0.74 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V VGS = ± 20 V - - ± 100 nA VGS = ± 30 V - - ±1 μA VDS = 520 V, VGS = 0 V - - 1 VDS = 520 V, VGS = 0 V, TJ = 125 °C - - 500 Gate-source leakage IGSS Zero gate voltage drain current IDSS Drain-source on-state resistance Forward transconductance a μA - 0.102 0.117  gfs VDS = 30 V, ID = 14 A - 11 - S VGS = 0 V, VDS = 100 V, f = 1 MHz - 3249 - - 145 - - 5 - - 105 - RDS(on) VGS = 10 V ID = 14 A Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Effective output capacitance, energy related a Co(er) Effective output capacitance, time related b Co(tr) - 441 - Qg - 97 146 Total gate charge VGS = 0 V, VDS = 0 V to 520 V VGS = 10 V Gate-source charge Qgs - 21 - Gate-drain charge Qgd - 43 - Turn-on delay time td(on) - 29 58 Rise time Turn-off delay time tr td(off) Fall time tf Gate input resistance Rg ID = 14 A, VDS = 520 V pF nC VDD = 520 V, ID = 14 A Rg = 9.1 , VGS = 10 V - 44 88 - 93 140 - 51 102 f = 1 MHz, open drain 0.25 0.5 1.0 - - 28 - - 87 - 0.9 1.2 - 174 308 ns - 1.1 2.4 μC - 15 - A ns  Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulsed diode forward current ISM Diode forward voltage VSD Reverse recovery time trr Reverse recovery charge Qrr Reverse recovery current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 11 A, VGS = 0 V TJ = 25 °C, IF = IS = 14 A, dI/dt = 100 A/μs, VR = 400 V V Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS b. Coss(tr) is a fixed capacitance that gives the charging time as Coss while VDS is rising from 0 % to 80 % VDS S18-0016-Rev. B, 15-Jan-18 Document Number: 91707 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP28N65EF www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.0 100 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V 75 TJ = 25 °C ID = 14 A RDS(on), Drain-to-Source On-Resistance (Normalized) ID, Drain-to-Source Current (A) TOP 50 25 2.5 2.0 1.5 1.0 VGS = 10 V 0.5 0 0 0 5 10 15 20 25 VDS, Drain-to-Source Voltage (V) -60 -40 -20 30 Fig. 4 - Normalized On-Resistance vs. Temperature Fig. 1 - Typical Output Characteristics 60 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V 45 100 000 TJ = 150 °C 10 000 Ciss C, Capacitance (pF) ID, Drain-to-Source Current (A) TOP 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) 30 15 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds shorted Crss = Cgd Coss = Cds + Cgd 1000 Coss 100 Crss 10 0 1 0 5 10 15 20 25 30 0 100 VDS, Drain-to-Source Voltage (V) 200 300 400 500 VDS, Drain-to-Source Voltage (V) 600 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 2 - Typical Output Characteristics 100 18 5000 TJ = 25 °C 16 75 12 50 TJ = 150 °C Eoss Coss 10 500 8 Eoss (μJ) 14 Coss (pF) ID, Drain-to-Source Current (A) 20 6 25 4 VDS = 27.6 V 2 0 0 5 10 15 20 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S18-0016-Rev. B, 15-Jan-18 25 0 50 0 100 200 300 VDS 400 500 600 Fig. 6 - Coss and Eoss vs. VDS Document Number: 91707 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP28N65EF www.vishay.com 30 24 VDS = 520 V VDS = 325 V VDS = 130 V 20 24 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) Vishay Siliconix 16 12 8 0 0 30 60 90 120 Qg, Total Gate Charge (nC) 150 25 180 Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage 50 75 100 125 TC, Case Temperature (°C) 150 Fig. 10 - Maximum Drain Current vs. Case Temperature 100 850 VDS, Drain-to-Source Breakdown Voltage (V) ISD, Reverse Drain Current (A) 12 6 4 0 TJ = 150 °C 10 TJ = 25 °C 1 VGS = 0 V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain Voltage (V) 1.4 1.6 Fig. 8 - Typical Source-Drain Diode Forward Voltage Operation in this Area Limited by RDS(on) 100 ID, Drain Current (A) 18 825 800 775 750 725 700 675 ID = 10 mA 650 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 11 - Typical Drain-to-Source Voltage vs. Temperature IDM Limited 10 100 μs Limited by RDS(on)* 1 1 ms 0.1 10 ms TC = 25 °C TJ = 150 °C Single Pulse BVDSS Limited 0.01 1 10 100 1000 VDS, Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Fig. 9 - Maximum Safe Operating Area S18-0016-Rev. B, 15-Jan-18 Document Number: 91707 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP28N65EF www.vishay.com Vishay Siliconix 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Pulse Time (s) Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case RD VDS VDS tp VGS VDD D.U.T. RG + - VDD VDS 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % IAS Fig. 13 - Switching Time Test Circuit Fig. 16 - Unclamped Inductive Waveforms VDS QG 10 V 90 % QGS QGD VG 10 % VGS td(on) td(off) tf tr Charge Fig. 14 - Switching Time Waveforms Fig. 17 - Basic Gate Charge Waveform Current regulator Same type as D.U.T. L Vary tp to obtain required IAS VDS 50 kΩ D.U.T RG 12 V + - IAS 0.2 µF 0.3 µF V DD + D.U.T. - VDS 10 V tp 0.01 Ω VGS 3 mA Fig. 15 - Unclamped Inductive Test Circuit IG ID Current sampling resistors Fig. 18 - Gate Charge Test Circuit S18-0016-Rev. B, 15-Jan-18 Document Number: 91707 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP28N65EF www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 19 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91707. S18-0016-Rev. B, 15-Jan-18 Document Number: 91707 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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