SiHP6N80AE
www.vishay.com
Vishay Siliconix
E Series Power MOSFET
FEATURES
D
• Low figure-of-merit (FOM) Ron x Qg
TO-220AB
• Low effective capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
G
• Avalanche energy rated (UIS)
G
D
• Integrated Zener diode ESD protection
S
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
S
N-Channel MOSFET
APPLICATIONS
PRODUCT SUMMARY
• Server and telecom power supplies
VDS (V) at TJ max.
RDS(on) typ. () at 25 °C
850
VGS = 10 V
Qg max. (nC)
• Power factor correction power supplies (PFC)
22.5
Qgs (nC)
4
Qgd (nC)
7
Configuration
• Switch mode power supplies (SMPS)
0.826
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
Single
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free and halogen-free
SiHP6N80AE-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
800
Gate-source voltage
VGS
± 30
Continuous drain current (TJ = 150 °C)
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed drain current a
ID
UNIT
V
5
3.2
A
IDM
10
0.5
W/°C
Single pulse avalanche energy b
EAS
20.3
mJ
Maximum power dissipation
PD
62.5
W
TJ, Tstg
-55 to +150
°C
Linear derating factor
Operating junction and storage temperature range
Drain-source voltage slope
TJ = 125 °C
Reverse diode dv/dt d
Soldering recommendations (peak temperature) c
For 10 s
dv/dt
100
0.4
260
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 1.2 A
c. 1.6 mm from case
d. ISD ID, di/dt = 100 A/μs, starting TJ = 25 °C
S20-0838-Rev. A, 26-Oct-2020
Document Number: 92364
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For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP6N80AE
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum junction-to-ambient
RthJA
-
62
Maximum junction-to-case (drain)
RthJC
-
2
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
VDS temperature coefficient
Gate-source threshold voltage (N)
VDS
VGS = 0 V, ID = 250 μA
800
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.8
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2
-
4
V
VGS = ± 20 V
-
-
± 10
VGS = ± 30 V
-
-
± 50
VDS = 800 V, VGS = 0 V
-
-
1
VDS = 640 V, VGS = 0 V, TJ = 125 °C
-
-
10
Gate-source leakage
IGSS
Zero gate voltage drain current
IDSS
μA
μA
-
0.826
0.950
gfs
VDS = 30 V, ID = 3 A
-
1.9
-
S
Input capacitance
Ciss
422
-
Coss
-
24
-
Reverse transfer capacitance
Crss
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
-
Output capacitance
-
4
-
Effective output capacitance, energy
related a
Co(er)
-
17
-
Effective output capacitance, time
related b
Co(tr)
-
92
-
-
15
22.5
-
4
-
Drain-source on-state resistance
Forward transconductance a
RDS(on)
VGS = 10 V
ID = 2 A
Dynamic
pF
VDS = 0 V to 480 V, VGS = 0 V
Total gate charge
Qg
Gate-source charge
Qgs
VGS = 10 V
ID = 3 A, VDS = 640 V
Gate-drain charge
Qgd
-
7
-
Turn-on delay time
td(on)
-
12
24
VDD = 640 V, ID = 3 A,
VGS = 10 V, Rg = 9.1
-
10
20
-
16
32
-
20
40
f = 1 MHz, open drain
1
2
4
-
-
5
-
-
10
Rise time
Turn-off delay time
tr
td(off)
Fall time
tf
Gate input resistance
Rg
nC
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulsed diode forward current
ISM
Diode forward voltage
VSD
Reverse recovery time
trr
Reverse recovery charge
Qrr
Reverse recovery current
IRRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IS = 3 A, VGS = 0 V
TJ = 25 °C, IF = IS = 3 A,
di/dt = 100 A/μs, VR = 25 V
S
-
-
1.2
V
-
285
570
ns
-
1.7
3.4
μC
-
9.9
-
A
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 V to 480 V VDSS
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 V to 480 V VDSS
S20-0838-Rev. A, 26-Oct-2020
Document Number: 92364
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP6N80AE
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
8V
1000
6
7V
100
3
6V
5V
0
5
10
15
1000
2.0
1.5
VGS = 10 V
100
1.0
0.5
10
0
10
0
2.5
20
-60 -40 -20 0
20 40 60 80 100 120 140 160
VDS - Drain-to-Source Voltage (V)
TJ - Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Axis Title
15 V
14 V
13 V
12 V
11 V
10 V
6
Axis Title
10 000
10000
10000
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds shorted
Crss = Cgd
Coss = Cds + Cgd
TJ = 150 °C
8V
1000
1st line
2nd line
7V
4
6V
100
2
2nd line
C - Capacitance (pF)
8
2nd line
ID - Drain-to-Source Current (A)
1st line
2nd line
9V
ID = 3 A
1000
1000
Ciss
1st line
2nd line
9
RDS(on) - Drain-to-Source On-Resistance
(Normalized)
TJ = 25 °C
15 V
14 V
13 V
12 V
11 V
10 V
10000
3.0
10000
1st line
2nd line
2nd line
ID - Drain-to-Source Current (A)
12
100
Coss
100
10
Crss
5V
10
0
5
10
15
10
1
20
0
100
200
300
400
500
600
VDS - Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Axis Title
Axis Title
12
4
10 000
10000
1000
6
TJ = 150 °C
100
3
2nd line
Coss - Output Capacitance (pF)
9
1st line
2nd line
2nd line
ID - Drain-to-Source Current (A)
TJ = 25 °C
3
1000
Coss
Eoss
2
100
1
VDS = 31 V
10
0
0
5
10
15
20
10
0
0
100
200
300
400
500
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
Fig. 6 - Coss and Eoss vs. VDS
S20-0838-Rev. A, 26-Oct-2020
Eoss - Output Capacitance Stored Energy (µJ)
2nd line
0
600
Document Number: 92364
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For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP6N80AE
www.vishay.com
Vishay Siliconix
Axis Title
Axis Title
10000
10000
6
VDS = 640 V
VDS = 400 V
VDS = 160 V
6
100
3
1000
4
1st line
2nd line
1000
2nd line
ID - Drain Current (A)
5
9
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
12
3
100
2
1
10
0
0
5
10
15
10
0
20
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TC - Case Temperature (°C)
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 10 - Maximum Drain Current vs. Case Temperature
Axis Title
TJ = 150 °C
1000
1
TJ = 25 °C
100
VGS = 0 V
10
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.2
10000
1.1
1000
1st line
2nd line
10
1st line
2nd line
2nd line
ISD - Reverse Drain Current (A)
10000
2nd line
VDS - Drain-to-Source Breakdown Voltage (V)
Axis Title
1
100
0.9
ID = 250 µA
10
0.8
-60 -40 -20 0
1.4
20 40 60 80 100 120 140 160
VSD - Source-Drain Voltage (V)
TJ - Junction Temperature (°C)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Fig. 11 - Temperature vs. Drain-to-Source Voltage
Axis Title
100
10000
IDM limited
10
BVDSS 1000
limited
Limited by RDS(on) a
1
100 µs
1st line
2nd line
2nd line
ID - Drain Current (A)
Operation in this area
limited by RDS(on)
100
0.1
1 ms
TC = 25 °C,
TJ = 150 °C,
single pulse
10 ms
0.01
1
10
100
10
1000
VDS - Drain-to-Source Voltage (V)
Fig. 9 - Maximum Safe Operating Area
Note
a. VGS > minimum VGS at which RDS(on) is specified
S20-0838-Rev. A, 26-Oct-2020
Document Number: 92364
4
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP6N80AE
www.vishay.com
Vishay Siliconix
Axis Title
1
10000
0.2
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.1
0.1
0.05
100
0.02
Single pulse
10
0.01
0.0001
0.001
0.01
0.1
1
Pulse Time (s)
Fig. 12 - Normalized Transient Thermal Impedance, Junction-to-Case
RD
VDS
VDS
tp
VGS
D.U.T.
VDD
Rg
+
- VDD
VDS
10 V
Pulse width ≤ 1 μs
Duty factor ≤ 0.1 %
IAS
Fig. 13 - Switching Time Test Circuit
Fig. 16 - Unclamped Inductive Waveforms
VDS
Qg
10 V
90 %
Qgs
10 %
VGS
Qgd
VG
td(on)
td(off)
tr
tf
Charge
Fig. 14 - Switching Time Waveforms
Fig. 17 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
L
VDS
Vary tp to obtain
required IAS
50 kΩ
12 V
D.U.T.
Rg
0.2 μF
0.3 μF
+
- VDD
+
D.U.T.
IAS
10 V
tp
0.01 Ω
-
VDS
VGS
3 mA
Fig. 15 - Unclamped Inductive Test Circuit
IG
ID
Current sampling resistors
Fig. 18 - Gate Charge Test Circuit
S20-0838-Rev. A, 26-Oct-2020
Document Number: 92364
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For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP6N80AE
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Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
3
+
2
-
-
4
+
1
• dV/dt controlled by Rg
• ISD controlled by duty factor “D”
• D.U.T. - device under test
Rg
+
-
VDD
Compliment N-channel of D.U.T. for driver
1
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = -10 V a
2
D.U.T. ISD waveform
Reverse
recovery
current
3
Body diode forward
current
dI/dt
D.U.T. VSD waveform
Re-applied
voltage
4
Diode recovery
dV/dt
VDD
Body diode forward drop
Inductor current
Ripple ≤ 5 %
ISD
Note
a. VGS = -5 V for logic level and -3 V drive devices
Fig. 19 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?92364.
S20-0838-Rev. A, 26-Oct-2020
Document Number: 92364
6
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
C
b
e
J(1)
e(1)
MILLIMETERS
DIM.
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.24
4.65
0.167
0.183
b
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
c
0.36
0.61
0.014
0.024
D
14.33
15.85
0.564
0.624
E
9.96
10.52
0.392
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
J(1)
2.41
2.92
0.095
0.115
L
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
ØP
3.53
3.94
0.139
0.155
Q
2.54
3.00
0.100
0.118
ECN: E21-0621-Rev. D, 04-Nov-2021
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM
Document Number: 66542
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 04-Nov-2021
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 09-Jul-2021
1
Document Number: 91000