SIHP6N80E-GE3

SiHP6N80E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D • Low figure-of-merit (FOM) Ron x Qg TO-220AB • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) Available • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 G G D S S N-Channel MOSFET APPLICATIONS • • • • Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. (Ω) at 25 °C 850 VGS = 10 V Qg max. (nC) 0.82 44 Qgs (nC) 5 Qgd (nC) 8 Configuration Single ORDERING INFORMATION Package TO-220AB SiHP6N80E-BE3 Lead (Pb)-free and halogen-free SiHP6N80E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 800 Gate-source voltage VGS ± 30 Continuous drain current (TJ = 150 °C) VGS at 10 V TC = 25 °C TC = 100 °C Pulsed drain current a ID IDM Linear derating factor UNIT V 5.4 3.4 A 15 0.63 W/°C Single pulse avalanche energy b EAS 95 mJ Maximum power dissipation PD 78 W TJ, Tstg -55 to +150 °C Operating junction and storage temperature range Drain-source voltage slope TJ = 125 °C Reverse diode dv/dt d Soldering recommendations (peak temperature) c For 10 s dv/dt 70 0.25 300 V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 2.6 A c. 1.6 mm from case d. ISD ≤ ID, di/dt = 100 A/μs, starting TJ = 25 °C S21-1110-Rev. B, 15-Nov-2021 Document Number: 92009 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP6N80E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum junction-to-ambient RthJA - 62 Maximum junction-to-case (drain) RthJC - 1.6 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold Voltage (N) Gate-source leakage Zero gate voltage drain current VDS VGS = 0 V, ID = 250 μA 800 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 1.1 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V VGS = ± 20 V - - ± 100 nA VGS = ± 30 V - - ±1 μA VDS = 800 V, VGS = 0 V - - 1 VDS = 640 V, VGS = 0 V, TJ = 125 °C - - 10 IGSS IDSS μA - 0.82 0.94 Ω gfs VDS = 30 V, ID = 3 A - 2.5 - S Input capacitance Ciss VGS = 0 V, VDS = 100 V, f = 1 MHz - 827 - - 37 - - 5 - - 24 - - 109 - Drain-source on-state resistance Forward transconductance RDS(on) VGS = 10 V ID = 3 A Dynamic Output capacitance Coss Reverse transfer capacitance Crss Effective output capacitance, energy related a Co(er) Effective output capacitance, time related b Co(tr) pF VDS = 0 V to 480 V, VGS = 0 V Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time Rise time Turn-off delay time - 22 44 - 5 - - 8 - td(on) - 13 26 tr - 9 18 - 27 54 td(off) Fall time tf Gate input resistance Rg VGS = 10 V ID = 3 A, VDS = 480 V VDD = 480 V, ID = 3 A, VGS = 10 V, Rg = 9.1 Ω f = 1 MHz, open drain - 18 36 0.5 1.0 2.0 - - 5.4 nC ns Ω Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulsed diode forward current ISM Diode forward voltage VSD Reverse recovery time trr Reverse recovery charge Qrr Reverse recovery current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = 3 A, VGS = 0 V TJ = 25 °C, IF = IS = 3 A, di/dt = 100 A/μs, VR = 25 V S - - 15 - - 1.2 - 282 564 ns - 2.0 4.0 μC - 11 - A V Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 V to 480 V VDSS b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 V to 480 V VDSS S21-1110-Rev. B, 15-Nov-2021 Document Number: 92009 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP6N80E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 15 3.0 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V 12 9 ID = 3 A TJ = 25 °C RDS(on), Drain-to-Source On-Resistance (Normalized) 6 3 2.0 1.5 1.0 VGS = 10 V 0.5 0 0 0 5 10 15 VDS, Drain-to-Source Voltage (V) 20 -60 -40 -20 8 10 000 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V TJ = 150 °C Ciss 1000 C, Capacitance (pF) 6 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature Fig. 1 - Typical Output Characteristics ID, Drain-to-Source Current (A) 2.5 4 2 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds shorted Crss = Cgd Coss = Cds + Cgd 100 Coss Crss 10 0 1 0 5 10 15 VDS, Drain-to-Source Voltage (V) 20 0 100 200 300 400 500 VDS, Drain-to-Source Voltage (V) 600 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 2 - Typical Output Characteristics 10 000 20 5.0 Coss, Output Capacitance (pF) ID, Drain-to-Source Current (A) 4.5 TJ = 25 °C 15 10 TJ = 150 °C 5 4.0 3.5 1000 3.0 Coss Eoss 2.5 2.0 100 1.5 1.0 0.5 VDS = 31 V 0 0 5 10 15 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S21-1110-Rev. B, 15-Nov-2021 20 Eoss, Output Capacitance Stored Energy (μJ) ID, Drain-to-Source Current (A) TOP 0 10 0 100 200 300 400 500 VDS, Drain-to-Source Voltage (V) 600 Fig. 6 - Coss and Eoss vs. VDS Document Number: 92009 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP6N80E www.vishay.com Vishay Siliconix 6 VDS = 480 V VDS = 300 V VDS = 120 V 5 9 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 12 6 4 3 2 3 1 0 0 0 6 12 18 Qg, Total Gate Charge (nC) 24 Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage 25 50 75 100 125 TC, Case Temperature (°C) 150 Fig. 10 - Maximum Drain Current vs. Case Temperature VDS, Drain-to-Source Breakdown Voltage (V) 1050 ISD, Reverse Drain Current (A) 10 TJ = 150 °C TJ = 25 °C 1 VGS = 0 V 0.1 0.0 0.3 0.6 0.9 1.2 VSD, Source-Drain Voltage (V) 1.5 Fig. 8 - Typical Source-Drain Diode Forward Voltage 1025 1000 975 950 925 900 875 850 825 800 ID = 250 μA 775 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 11 - Temperature vs. Drain-to-Source Voltage 100 Operation in this area limited by RDS(on) IDM limited ID, Drain Current (A) 10 100 μs 1 Limited by RDS(on)* 1 ms 0.1 TC = 25 °C TJ = 150 °C single pulse 10 ms BVDSS limited 0.01 1 10 100 1000 VDS, Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Fig. 9 - Maximum Safe Operating Area S21-1110-Rev. B, 15-Nov-2021 Document Number: 92009 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP6N80E www.vishay.com Vishay Siliconix 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse 0.01 0.0001 0.001 0.01 Pulse Time (s) 0.1 1 Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case RD VDS VDS tp VGS D.U.T. VDD Rg + - VDD VDS 10 V Pulse width ≤ 1 μs Duty factor ≤ 0.1 % IAS Fig. 13 - Switching Time Test Circuit Fig. 16 - Unclamped Inductive Waveforms VDS Qg 10 V 90 % Qgs 10 % VGS Qgd VG td(on) td(off) tr tf Charge Fig. 14 - Switching Time Waveforms Fig. 17 - Basic Gate Charge Waveform Current regulator Same type as D.U.T. L VDS Vary tp to obtain required IAS 50 kΩ D.U.T. Rg 12 V 0.2 μF 0.3 μF + - VDD + D.U.T. IAS - VDS 10 V tp 0.01 Ω VGS 3 mA Fig. 15 - Unclamped Inductive Test Circuit IG ID Current sampling resistors Fig. 18 - Gate Charge Test Circuit S21-1110-Rev. B, 15-Nov-2021 Document Number: 92009 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP6N80E www.vishay.com Vishay Siliconix Peak Diode Recovery dv/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer 3 + 2 - - 4 + 1 Rg • • • • 1 Driver gate drive Period P.W. + V - DD dv/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test D= P.W. Period V GS = 10 V a 2 D.U.T. ISD waveform Reverse recovery current 3 D.U.T. VDS Body diode forward current di/dt waveform Diode recovery dv/dt Re-applied voltage V DD Body diode forward drop 4 Inductor current Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 19 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?92009. S21-1110-Rev. B, 15-Nov-2021 Document Number: 92009 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) C b e J(1) e(1) MILLIMETERS DIM. INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 J(1) 2.41 2.92 0.095 0.115 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM Document Number: 66542 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 04-Nov-2021 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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