SiHW23N60E
www.vishay.com
Vishay Siliconix
E Series Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max. at 25 °C ()
•
•
•
•
•
•
650
VGS = 10 V
Qg max. (nC)
0.158
95
Qgs (nC)
16
Qgd (nC)
25
Configuration
Single
D
APPLICATIONS
TO-247AD
•
•
•
•
Server and Telecom Power Supplies
Switch Mode Power Supplies (SMPS)
Power Factor Correction Power Supplies (PFC)
Lighting
- High-Intensity Discharge (HID)
- Fluorescent Ballast Lighting
• Industrial
- Welding
- Induction Heating
- Motor Drives
- Battery Chargers
- Renewable Energy
- Solar (PV Inverters)
G
G
D
S
S
Low Figure-of-Merit (FOM) Ron x Qg
Low Input Capacitance (Ciss)
Reduced Switching and Conduction Losses
Ultra Low Gate Charge (Qg)
Avalanche Energy Rated (UIS)
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-247AD
Lead (Pb)-free and Halogen-free
SiHW23N60E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Gate-Source Voltage AC (f > 1 Hz)
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain
VGS at 10 V
TC = 25 °C
TC = 100 °C
Currenta
ID
IDM
Linear Derating Factor
LIMIT
UNIT
600
± 20
V
30
23
15
A
63
1.8
W/°C
mJ
Single Pulse Avalanche Energyb
EAS
353
Maximum Power Dissipation
PD
227
W
TJ, Tstg
- 55 to + 150
°C
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
TJ = 125 °C
Reverse Diode dV/dtd
Soldering Recommendations (Peak Temperature)c
for 10 s
dV/dt
37
34
300
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 5 A.
c. 1.6 mm from case.
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
S13-1031-Rev. A, 10-Jun-13
Document Number: 91562
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHW23N60E
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
40
Maximum Junction-to-Case (Drain)
RthJC
-
0.55
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
VDS
VGS = 0 V, ID = 250 μA
600
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.72
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2
-
4
V
nA
VGS = ± 20 V
-
-
± 100
VDS = 600 V, VGS = 0 V
-
-
1
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
-
10
IGSS
IDSS
μA
-
0.132
0.158
gfs
VDS = 30 V, ID = 12 A
-
6.4
-
S
Input Capacitance
Ciss
2418
-
Coss
-
119
-
Reverse Transfer Capacitance
Crss
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
-
Output Capacitance
-
4
-
Effective Output Capacitance, Energy
Relateda
Co(er)
-
107
-
Effective Output Capacitance, Time
Relatedb
Co(tr)
-
320
-
Qg
-
63
95
-
16
-
-
25
-
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
VGS = 10 V
ID = 12 A
Dynamic
Total Gate Charge
pF
VDS = 0 V to 480 V, VGS = 0 V
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Gate Input Resistance
Rg
VGS = 10 V
ID = 12 A, VDS = 480 V
nC
-
22
44
VDD = 480 V, ID = 12 A,
VGS = 10 V, Rg = 9.1
-
38
76
-
66
99
-
34
68
f = 1 MHz, open drain
-
0.73
-
-
-
23
-
-
63
-
0.9
1.2
-
384
768
ns
-
6.4
12.8
μC
-
30
-
A
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Reverse Recovery Current
IRRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 12 A, VGS = 0 V
TJ = 25 °C, IF = IS = 12 A,
dI/dt = 100 A/μs, VR = 25 V
V
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
S13-1031-Rev. A, 10-Jun-13
Document Number: 91562
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHW23N60E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
TOP 15 V
14 V
13 V
12 V
11 V
60
10 V
9V
8V
7V
3
TJ = 25 °C
ID = 12 A
RDS(on), Drain-to-Source
On Resistance (Normalized)
ID, Drain-to-Source Current (A)
80
40
20
6V
2.5
2
1.5
VGS = 10 V
1
0.5
5V
0
0
5
15
20
25
0
- 60 - 40 - 20 0
30
TJ, Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
30
20
Ciss
TJ = 150 °C
ġ
Capacitance (pF)
TOP 15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
1000
Coss
100
ġ
ġ
Crss
10
10
ġ
5V
1
0
0
10
5
20
15
25
0
30
VDS, Drain-to-Source Voltage (V)
100
200
400
300
500
600
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 2 - Typical Output Characteristics
24
VGS, Gate-to-Source Voltage (V)
80
ID, Drain-to-Source Current (A)
20 40 60 80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
10 000
40
ID, Drain-to-Source Current (A)
10
60
40
TJ = 150 °C
20
TJ = 25 °C
VDS = 29.6 V
VDS = 480 V
VDS = 300 V
VDS = 120 V
20
16
12
8
4
0
0
0
5
10
15
20
25
0
30
60
90
120
150
VGS, Gate-to-Source Voltage (V)
Qg, Total Gate Charge (nC)
Fig. 3 - Typical Transfer Characteristics
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S13-1031-Rev. A, 10-Jun-13
Document Number: 91562
3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHW23N60E
www.vishay.com
Vishay Siliconix
ISD, Reverse Drain Current (A)
100
25
ID, Drain Current (A)
TJ = 150 °C
TJ = 25 °C
10
1
20
15
10
5
VGS = 0 V
0
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
25
1.6
VSD, Source-Drain Voltage (V)
75
100
125
150
TJ, Case Temperature (°C)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
50
Fig. 9 - Maximum Drain Current vs. Case Temperature
IDM = Limited
750
ID = 250 μA
ID, Drain Current (A)
10
100 μs
Limited by RDS(on)*
1
1 ms
Operation in this Area
Limited by RDS(on)
10 ms
0.1
TC = 25 °C
TJ = 150 °C
Single Pulse
0.01
1
VDS, Drain-to-Source
Breakdown Voltage (V)
725
675
650
625
600
575
BVDSS Limited
550
- 60 - 40 - 20 0
10
100
1000
VDS, Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 8 - Maximum Safe Operating Area
Normalized Effective Transient
Thermal Impedance
700
Fig. 10 - Temperature vs. Drain-to-Source Voltage
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Pulse Time (s)
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
S13-1031-Rev. A, 10-Jun-13
Document Number: 91562
4
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHW23N60E
www.vishay.com
Vishay Siliconix
RD
VDS
QG
10 V
VGS
D.U.T.
RG
QGS
+
- VDD
QGD
VG
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Charge
Fig. 12 - Switching Time Test Circuit
Fig. 16 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
VDS
90 %
50 kΩ
12 V
0.2 µF
0.3 µF
+
10 %
VGS
D.U.T.
td(on)
td(off) tf
tr
-
VDS
VGS
3 mA
Fig. 13 - Switching Time Waveforms
IG
ID
Current sampling resistors
Fig. 17 - Gate Charge Test Circuit
L
Vary tp to obtain
required IAS
VDS
D.U.T
RG
+
-
IAS
V DD
10 V
0.01 Ω
tp
Fig. 14 - Unclamped Inductive Test Circuit
VDS
tp
VDD
VDS
IAS
Fig. 15 - Unclamped Inductive Waveforms
S13-1031-Rev. A, 10-Jun-13
Document Number: 91562
5
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHW23N60E
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 18 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91562.
S13-1031-Rev. A, 10-Jun-13
Document Number: 91562
6
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000
