SIJ438DP-T1-GE3

SiJ438DP www.vishay.com Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () Max. ID (A) a, g 0.00135 at VGS = 10 V 80 0.00175 at VGS = 4.5 V 80 Qg (Typ.) 58 nC • TrenchFET® Gen IV power MOSFET • Tuned for the lowest RDS-Qoss FOM • 100 % Rg and UIS tested • Qgd / Qgs ratio < 1 optimizes switching characteristics PowerPAK® SO-8L Single • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D APPLICATIONS 6. 15 m m m 1 13 m 4 G 5. Top View 3 S 2 S 1 S D • Synchronous rectification • ORing • High power density DC/DC G • VRMs and embedded DC/DC Bottom View • DC/AC inverters Ordering Information:  SiJ438DP-T1-GE3 (lead (Pb)-free and halogen-free) N-Channel MOSFET • Load switch S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS +20, -16 Continuous Drain Current (TJ = 150 °C) TC = 25 °C 80 g TC = 70 °C 80 g TA = 25 °C ID Continuous Source-Drain Diode Current 36.2 b, c Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM TC = 25 °C TA = 25 °C L = 0.1 mH TC = 70 °C TA = 25 °C 63 IS 4.5 b, c IAS 50 EAS 125 mJ 69.4 44.4 PD W 5 b, c 3.2 b, c TA = 70 °C Operating Junction and Storage Temperature Range A 200 TC = 25 °C Maximum Power Dissipation V 45.3 b, c TA = 70 °C Pulsed Drain Current (t = 100 μs) Unit TJ, Tstg -55 to +150 Soldering Recommendations (Peak Temperature) d, e °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient b, f Maximum Junction-to-Case (Drain) Symbol Typical Maximum t  10 s RthJA 20 25 Steady State RthJC 1.3 1.8 Unit °C/W Notes a. TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 65 °C/W. g. Package limited. S16-0750-Rev. A, 25-Apr-16 Document Number: 69684 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJ438DP www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit VDS VGS = 0 V, ID = 250 μA 40 - - - V 22 - - -5.6 - Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage ID = 250 μA mV/°C VGS(th) VDS = VGS, ID = 250 μA 1.1 - 2.4 V Gate-Source Leakage IGSS VDS = 0 V, VGS = +20 V, -16 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-State Resistance a Forward Transconductance a RDS(on) gfs VDS = 40 V, VGS = 0 V - - 1 VDS = 40 V, VGS = 0 V, TJ = 55 °C - - 10 VDS  5 V, VGS = 10 V 30 - - VGS = 10 V, ID = 20 A - 0.00110 0.00135 VGS = 4.5 V, ID = 10 A - 0.00145 0.00175 VDS = 10 V, ID = 20 A - 9400 - VDS = 20 V, VGS = 0 V, f = 1 MHz - 1340 - - 215 - - 121 182 - 58 87 - 22.6 - - 13.5 - 149 - μA A  S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Output Charge Qoss VDS = 20 V, VGS = 0 V - 62.5 94 Rg f = 1 MHz 0.4 1.1 2.0 - 16 32 - 19 38 - 54 108 Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = 20 V,VGS = 10 V, ID = 10 A VDS = 20 V,VGS = 4.5 V, ID = 10 A td(on) tr td(off) VDD = 20 V, RL = 2  ID  10 A, VGEN = 10 V, Rg = 1  tf - 9 18 td(on) - 55 110 - 98 196 - 47 94 - 17 34 tr td(off) VDD = 20 V, RL = 2  ID  10 A, VGEN = 4.5 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current (t = 100 μs) ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C IS = 5 A IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C - - 63 - - 200 - 0.7 1.1 V - 60 120 ns - 95 190 nC - 33 - - 27 - A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing.     Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-0750-Rev. A, 25-Apr-16 Document Number: 69684 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJ438DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 200 200 10000 10000 VGS = 10 V thru 4 V 80 100 VGS = 3 V 40 1000 120 1st line 2nd line 1000 120 2nd line ID - Drain Current (A) 160 1st line 2nd line 2nd line ID - Drain Current (A) 160 TC = 25 °C 80 100 40 TC = -55 °C TC = 125 °C VGS = 2 V 0 0 10 0.5 1 1.5 2 2.5 10 0 1 2 VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title 10000 12000 Ciss 1000 1st line 2nd line 0.0012 100 VGS = 10 V 2nd line C - Capacitance (pF) VGS = 4.5 V 0.0018 0.0006 1000 8000 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 10000 0.0024 6000 Coss 4000 2000 0 40 60 80 100 Crss 0 10 20 100 10 0 8 16 32 VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance 2.0 ID = 20 A 8 1000 1st line 2nd line VDS = 30 V VDS = 10 V 4 100 2 0 10 25 50 75 100 125 2nd line RDS(on) - On-Resistance (Normalized) 10000 VDS = 20 V 40 Axis Title Axis Title 10 2nd line VGS - Gate-to-Source Voltage (V) 24 ID - Drain Current (A) 2nd line 6 5 Axis Title 10000 0 4 VDS - Drain-to-Source Voltage (V) 2nd line 0.003 0 3 10000 ID = 20 A 1.7 VGS = 10 V 1000 1.4 VGS = 4.5 V 1.1 100 0.8 0.5 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S16-0750-Rev. A, 25-Apr-16 1st line 2nd line 0 Document Number: 69684 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJ438DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 0.01 10000 10000 1000 1 TJ = 25 °C 0.1 100 0.01 0.001 0.008 1000 0.006 TJ = 125 °C 0.004 100 0.002 TJ = 25 °C 0 10 0 0.2 0.4 0.6 0.8 1.0 1.2 10 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 0.5 200 10000 0.2 10000 160 1000 2nd line Power (W) 1000 ID = 5 mA -0.4 120 1st line 2nd line -0.1 1st line 2nd line 2nd line VGS(th) - Variance (V) 1st line 2nd line TJ = 150 °C 1st line 2nd line 2nd line IS - Source Current (A) 2nd line RDS(on) - On-Resistance (Ω) ID = 20 A 10 80 100 ID = 250 μA 100 -0.7 40 -1.0 0 0.001 10 -50 -25 0 25 50 75 100 125 150 10 0.01 0.1 1 10 TJ - Temperature (°C) 2nd line Time (s) 2nd line Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 1000 10000 IDM limited ID limited 100 1000 μs 10 1 ms 10 ms Limited by RDS(on) (1) 1 1st line 2nd line 2nd line ID - Drain Current (A) 100 100 ms 100 1s 0.1 10 s Ta = 25 °C Single pulse 0.01 0.01 (1) 0.1 DC BVDSS limited 1 10 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S16-0750-Rev. A, 25-Apr-16 Document Number: 69684 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJ438DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 200 10000 1000 120 1st line 2nd line 2nd line ID - Drain Current (A) 160 80 100 Package Limited 40 0 10 0 25 50 75 100 125 150 TC - Case Temperature (°C) 2nd line Current Derating a Axis Title Axis Title 100 10000 2.5 80 10000 2.0 1.5 1st line 2nd line 40 2nd line Power (W) 1000 1st line 2nd line 2nd line Power (W) 1000 60 1.0 100 20 100 0.5 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TC - Case Temperature (°C) 2nd line TA - Ambient Temperature (°C) 2nd line Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S16-0750-Rev. A, 25-Apr-16 Document Number: 69684 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJ438DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 Duty Cycle = 0.5 Notes: 0.2 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 PDM 0.1 0.1 t1 t2 t 1. Duty cycle, D = t1 2 2. Per unit base = RthJA = 70 °C/W 0.05 0.02 3. TJM - TA = PDMZthJA Single pulse 100 (t) 4. Surface mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 0.2 0.1 1000 0.05 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.02 100 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case                       Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69684. S16-0750-Rev. A, 25-Apr-16 Document Number: 69684 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline 1 W E1 E E2 W2 W3 W1 b2 D2 b b1 L L1 L1 A1 e θ D1 D b3 b4 0.25 gauge line Topside view Backside view (single) E2 W2 C A W3 W1 F K D3 D3 D2 b3 b4 Backside view (dual) Revision: 05-Aug-2019 Document Number: 69003 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS MIN. NOM. INCHES MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 3.18 3.28 3.38 0.125 0.129 0.133 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 2.96 0.117  0° - 10° 0° - 10° ECN: S19-0643-Rev. E, 05-Aug-2019 DWG: 5976 Note • Millimeters will gover Revision: 05-Aug-2019 Document Number: 69003 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE 5.000 (0.197) 0.510 (0.020) 2.310 (0.091) 4.061 (0.160) 0.595 (0.023) 6.250 (0.246) 8.250 (0.325) 3.630 (0.143) 0.610 (0.024) 0.410 (0.016) 2.715 (0.107) 0.860 (0.034) 1.291 (0.051) 0.710 (0.028) 0.820 (0.032) 1.905 (0.075) 1.270 (0.050) 7.250 (0.285) Recommended Minimum Pads Dimensions in mm (inches) Revision: 07-Feb-12 1 Document Number: 63818 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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