New Product
SiJ458DP
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a, g
0.0022 at VGS = 10 V
60
0.0026 at VGS = 4.5 V
60
VDS (V)
30
Qg (Typ.)
40.6 nC
PowerPAK® SO-8L Single
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
m
5m
6.1
•
•
•
•
5.1
3m
m
D
4
G
S
POL
VRM
DC/DC Converters
High Current Switching
D
G
3
S
2
S
1
S
Ordering Information: SiJ458DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
ID
TC = 25 °C
TA = 25 °C
IS
L = 0.1 mH
IAS
EAS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
Unit
V
60g
60g
35.5b, c
28.4b, c
80
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Limit
30
± 20
60g
4.5b, c
40
80
69.4
44.4
A
mJ
5.0b, c
3.2b, c
- 55 to 150
260
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Typical
20
1.3
Maximum
25
1.8
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
g. Package limited.
Document Number: 65709
S10-0640-Rev. A, 22-Mar-10
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New Product
SiJ458DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS/TJ
VDS Temperature Coefficient
V
32
ID = 250 µA
mV/°C
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
2.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VDS ≥ 5 V, VGS = 10 V
- 6.7
1.0
30
µA
A
VGS = 10 V, ID = 20 A
0.0018
0.0022
VGS = 4.5 V, ID = 15 A
0.0021
0.0026
VDS = 10 V, ID = 20 A
100
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
4810
VDS = 15 V, VGS = 0 V, f = 1 MHz
444
VDS = 15 V, VGS = 10 V, ID = 20 A
81
122
40.6
61
VDS = 15 V, VGS = 4.5 V, ID = 20 A
10.8
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
f = 1 MHz
2.2
16
30
10
20
43
80
18
td(on)
38
75
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
tf
Fall Time
1.1
9
td(off)
Turn-Off Delay Time
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
0.4
tf
tr
Rise Time
nC
13.5
td(on)
Turn-On Delay Time
pF
892
44
80
49
90
24
45
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
a
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
60
80
IS = 4 A
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.7
1.1
V
35
70
ns
32
64
nC
17
18
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65709
S10-0640-Rev. A, 22-Mar-10
New Product
SiJ458DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
80
VGS = 10 V thru 4 V
8
ID - Drain Current (A)
ID - Drain Current (A)
64
48
3V
32
6
TC = 25 °C
4
2
16
TC = - 55 °C
1
3
0
0
0
0.5
1.0
1.5
2.0
0
2.5
2
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0026
6500
0.0024
5200
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
TC = 125 °C
VGS = 4.5 V
0.0022
0.0020
5
Ciss
3900
2600
VGS = 10 V
0.0018
1300
0.0016
0
Coss
Crss
0
16
32
48
64
80
0
12
18
24
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
30
1.8
ID = 20 A
ID = 20 A
8
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
6
VDS = 10 V
6
VDS = 15 V
4
VDS = 20 V
VGS = 10 V
1.5
VGS = 4.5 V
1.2
0.9
2
0
0
18
36
54
72
90
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 65709
S10-0640-Rev. A, 22-Mar-10
150
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New Product
SiJ458DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
100
ID = 20 A
0.08
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
TJ = 150 °C
1
TJ = 25 °C
0.1
TJ = 25 °C
0.00
0.2
0.4
0.6
0.8
1.0
0
1.2
1
2
3
4
5
6
7
8
9
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
200
0.2
160
- 0.1
120
Power (W)
VGS(th) - Variance (V)
TJ = 125 °C
0.04
0.02
0.01
0.001
0.0
0.06
ID = 5 mA
- 0.4
10
80
ID = 250 μA
- 0.7
- 1.0
- 50
40
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
TJ - Junction Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
10
100
Limited by RDS(on)*
1 ms
ID - Drain Current (A)
10
10 ms
100 ms
1
1s
10 s
0.1
DC
BVDSS Limited
TA = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 65709
S10-0640-Rev. A, 22-Mar-10
New Product
SiJ458DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
150
ID - Drain Current (A)
120
90
Package Limited
60
30
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
85
2.5
68
2.0
51
1.5
Power (W)
Power (W)
Current Derating*
34
17
1.0
0.5
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65709
S10-0640-Rev. A, 22-Mar-10
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New Product
SiJ458DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
t1
0.05
t2
t1
t2
2. Per Unit Base = RthJA = 65 °C/W
1. Duty Cycle, D =
0.02
0.01
10-4
3. TJM - TA = PDMZthJA (t)
Single Pulse
10-3
10-2
4. Surface Mounted
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data,see www.vishay.com/ppg?65709.
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Document Number: 65709
S10-0640-Rev. A, 22-Mar-10
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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