SiJ478DP
www.vishay.com
Vishay Siliconix
N-Channel 80 V (D-S) MOSFET
FEATURES
PowerPAK® SO-8L Single
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
D
6.
15
m
m
m
1
3
.1
m
5
Top View
4
G
3
S
2
S
1
S
APPLICATIONS
D
• Primary side switching
Bottom View
• Synchronous rectification
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 10 V
RDS(on) max. () at VGS = 6 V
RDS(on) max. () at VGS = 4.5 V
Qg typ. (nC)
ID (A) a
Configuration
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
• DC/AC inverters
80
0.0080
0.0088
0.0115
17.1
60
Single
• LED backlighting
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK SO-8L
SiJ478DP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 100 μs)
ID
IDM
Continuous source-drain diode current
TC = 25 °C
TA = 25 °C
IS
Single pulse avalanche current
Single pulse avalanche energy
L = 0.1 mH
IAS
EAS
Maximum power dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
TJ, Tstg
Limit
80
± 20
60 a
52.7
18.6 b, c
14.9 b, c
150
60 a
4.5 b, c
30
45
62.5
40
5 b, c
3.2 b, c
-55 to +150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum junction-to-ambient b, f
t 10 s
RthJA
20
25
°C/W
Maximum junction-to-case (drain)
Steady state
RthJC
1.5
2
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 70 °C/W
S13-1386-Rev. A, 17-Jun-13
Document Number: 62868
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiJ478DP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
VDS
VGS = 0 V, ID = 250 μA
80
-
-
V
-
37
-
-
-6.1
-
Static
Drain-source breakdown voltage
VDS temperature coefficient
VDS/TJ
VGS(th) temperature coefficient
VGS(th)/TJ
Gate-source threshold voltage
ID = 250 μA
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
1.4
-
2.6
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
RDS(on)
gfs
VDS = 80 V, VGS = 0 V
-
-
1
VDS = 80 V, VGS = 0 V, TJ = 55 °C
-
-
10
VDS 5 V, VGS = 10 V
30
-
-
VGS = 10 V, ID = 20 A
-
0.0064
0.0080
VGS = 6 V, ID = 15 A
-
0.0070
0.0088
VGS = 4.5 V, ID = 10 A
-
0.0087
0.0115
VDS = 10 V, ID = 20 A
-
60
-
-
1855
-
VDS = 40 V, VGS = 0 V, f = 1 MHz
-
950
-
-
76
-
μA
A
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
VDS = 40 V, VGS = 10 V, ID = 10 A
-
35.5
54
Total gate charge
Qg
VDS = 40 V, VGS = 6 V, ID = 10 A
-
22
33
-
17.1
26
Gate-source charge
Qgs
VDS = 40 V, VGS = 4.5 V, ID = 10 A
-
5.3
-
Gate-drain charge
Qgd
-
7.3
-
Output charge
Qoss
VDS = 40 V, VGS = 0 V
-
57
86
Gate resistance
Rg
f = 1 MHz
0.5
1.3
2
-
12
24
-
8
16
-
32
64
tf
-
7
14
td(on)
-
14
28
-
11
22
-
30
60
-
8
16
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tr
td(off)
VDD = 40 V, RL = 4
ID 10 A, VGEN = 10 V, Rg = 1
VDD = 40 V, RL = 4
ID 10 A, VGEN = 6 V, Rg = 1
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current (t = 100 μs)
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
IS = 5 A
IF = 10 A, di/dt = 100 A/μs,
TJ = 25 °C
-
-
60
-
-
150
-
0.76
1.1
V
-
38
75
ns
-
36
70
nC
-
19
-
-
19
-
A
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-1386-Rev. A, 17-Jun-13
Document Number: 62868
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiJ478DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
120
VGS = 10 V thru 5 V
100
VGS = 4 V
ID - Drain Current (A)
ID - Drain Current (A)
80
60
40
20
80
TC = 25 °C
60
40
TC = 125 °C
20
VGS = 3 V
VGS = 2 V
0
1.0
2.0
3.0
4.0
TC = - 55 °C
0
0.0
5.0
1.4
4.2
5.6
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0150
3500
0.0130
2800
0.0110
VGS = 4.5 V
0.0090
VGS = 6.0 V
7.0
Coss
2100
Ciss
1400
0.0070
700
Crss
VGS = 10 V
0.0050
0
0
20
40
60
80
100
0
12
24
36
48
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
60
Capacitance
On-Resistance vs. Drain Current
2.0
10
ID = 10 A
ID = 20 A
VGS = 10 V
1.7
8
VDS = 40 V
6
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
2.8
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.0
VDS = 20 V
VDS = 60 V
4
2
1.4
VGS = 4.5 V
1.1
0.8
0
0
8
16
24
32
Qg - Total Gate Charge (nC)
Gate Charge
S13-1386-Rev. A, 17-Jun-13
40
0.5
- 50
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
125
150
On-Resistance vs. Junction Temperature
Document Number: 62868
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiJ478DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.050
TJ = 25 °C
1
0.1
0.01
0.030
0.020
TJ = 125 °C
0.010
0.001
TJ = 25 °C
0.000
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
0
Source-Drain Diode Forward Voltage
0.5
500
0.2
400
- 0.1
300
ID = 5 mA
- 0.4
- 0.7
- 1.0
- 25
0
25
50
75
10
200
100
ID = 250 μA
- 50
2
4
6
8
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Power (W)
VGS(th) Variance (V)
ID = 20 A
0.040
TJ = 150 °C
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
100
125
150
0
0.001
0.01
TJ - Temperature (°C)
Threshold Voltage
0.1
Time (s)
1
10
Single Pulse Power, Junction-to-Ambient
1000
IDM Limited
ID - Drain Current (A)
100
100 μs
ID Limited
10
1 ms
1
10 ms
Limited by RDS(on)*
100 ms
0.1
TA = 25 °C
Single Pulse
0.01
0.01
1s
10 s
DC
BVDSS Limited
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area, Junction-to-Ambient
S13-1386-Rev. A, 17-Jun-13
Document Number: 62868
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiJ478DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
75
ID - Drain Current (A)
60
Package Limited
45
30
15
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
75
2.5
60
2.0
Power (W)
Power (W)
Current Derating a
45
1.5
30
1.0
15
0.5
0.0
0
0
25
50
75
100
TC - Case Temperature (°C)
Power, Junction-to-Case
125
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S13-1386-Rev. A, 17-Jun-13
Document Number: 62868
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiJ478DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 70 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
0.0001
0.001
0.01
4. Surface Mounted
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62868.
S13-1386-Rev. A, 17-Jun-13
Document Number: 62868
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline 1
W
E1
E
E2
W2
W3
W1
b2
D2
b
b1
L
L1
L1
A1
e
θ
D1
D
b3
b4
0.25 gauge line
Topside view
Backside view (single)
E2
W2
C
A
W3
W1
F
K
D3
D3
D2
b3
b4
Backside view (dual)
Revision: 05-Aug-2019
Document Number: 69003
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
DIM.
Vishay Siliconix
MILLIMETERS
MIN.
NOM.
INCHES
MAX.
MIN.
NOM.
MAX.
A
1.00
1.07
1.14
0.039
0.042
0.045
A1
0.00
-
0.127
0.00
-
0.005
b
0.33
0.41
0.48
0.013
0.016
0.019
b1
0.44
0.51
0.58
0.017
0.020
0.023
b2
4.80
4.90
5.00
0.189
0.193
0.197
b3
0.094
0.004
b4
0.47
0.019
c
0.20
0.25
0.30
0.008
0.010
0.012
D
5.00
5.13
5.25
0.197
0.202
0.207
D1
4.80
4.90
5.00
0.189
0.193
0.197
D2
3.86
3.96
4.06
0.152
0.156
0.160
D3
1.63
1.73
1.83
0.064
0.068
0.072
e
1.27 BSC
0.050 BSC
E
6.05
6.15
6.25
0.238
0.242
0.246
E1
4.27
4.37
4.47
0.168
0.172
0.176
E2
3.18
3.28
3.38
0.125
0.129
0.133
F
-
-
0.15
-
-
0.006
L
0.62
0.72
0.82
0.024
0.028
0.032
L1
0.92
1.07
1.22
0.036
0.042
0.048
K
0.51
0.020
W
0.23
0.009
W1
0.41
0.016
W2
2.82
0.111
W3
2.96
0.117
0°
-
10°
0°
-
10°
ECN: S19-0643-Rev. E, 05-Aug-2019
DWG: 5976
Note
• Millimeters will gover
Revision: 05-Aug-2019
Document Number: 69003
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE
5.000
(0.197)
0.510
(0.020)
2.310
(0.091)
4.061
(0.160)
0.595
(0.023)
6.250
(0.246)
8.250
(0.325)
3.630
(0.143)
0.610
(0.024)
0.410
(0.016)
2.715
(0.107)
0.860
(0.034)
1.291
(0.051)
0.710
(0.028)
0.820
(0.032)
1.905
(0.075)
1.270
(0.050)
7.250
(0.285)
Recommended Minimum Pads
Dimensions in mm (inches)
Revision: 07-Feb-12
1
Document Number: 63818
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 01-Jan-2022
1
Document Number: 91000
