SiJ494DP
www.vishay.com
Vishay Siliconix
N-Channel 150 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
150
RDS(on) () Max.
ID (A) a
0.0232 at VGS = 10 V
36.8
0.0272 at VGS = 7.5 V
34
Qg (Typ.)
16.1 nC
• ThunderFET® technology optimizes balance of
RDS(on), Qg, Qsw and Qoss
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
PowerPAK® SO-8L Single
APPLICATIONS
D
6.
15
m
m
m
3
1
1
5.
m
Top View
D
• Primary side switching
4
G
3
S
2
S
1
S
• Synchronous rectification
• DC/AC inverters
• LED backlighting
G
• High current switching
Bottom View
S
Ordering Information:
SiJ494DP-T1-GE3 (lead (Pb)-free and halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
150
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
Continuous Source-Drain Diode Current
29.5
ID
9.8 b, c
7.9 b, c
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
IDM
TC = 25 °C
TA = 25 °C
L = 0.1 mH
36.8
IS
4.5 b, c
IAS
30
EAS
45
TC = 25 °C
69.4
44.4
PD
mJ
W
5 b, c
3.2 b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
A
100
TC = 70 °C
TA = 25 °C
V
36.8
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
Unit
TJ, Tstg
-55 to +150
Soldering Recommendations (Peak Temperature) d, e
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambient b, f
t 10 s
RthJA
20
25
Maximum Junction-to-Case (Drain)
Steady State
RthJC
1.3
1.8
Unit
°C/W
Notes
a. TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
S16-1734-Rev. A, 29-Aug-16
Document Number: 79056
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiJ494DP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
VDS
VGS = 0 V, ID = 250 μA
150
-
-
-
V
111
-
-
-7
-
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 μA
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.5
-
4.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current a
ID(on)
Drain-Source On-State Resistance a
Forward Transconductance a
RDS(on)
gfs
VDS = 150 V, VGS = 0 V
-
-
1
VDS = 150 V, VGS = 0 V, TJ = 70 °C
-
-
10
VDS 5 V, VGS = 10 V
30
-
-
VGS = 10 V, ID = 15 A
-
0.0193
0.0232
VGS = 7.5 V, ID = 10 A
-
0.0217
0.0272
VDS = 10 V, ID = 15 A
-
25
-
-
1070
-
-
250
-
-
22
-
μA
A
S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VDS = 75 V, VGS = 0 V, f = 1 MHz
VDS = 75 V,VGS = 10 V, ID = 15 A
-
20.3
31
-
16.1
25
VDS = 75 V,VGS = 7.5 V, ID = 15 A
-
5.5
-
Gate-Drain Charge
Qgd
-
6.7
-
Output Charge
Qoss
VDS = 75 V, VGS = 0 V
-
50
80
Rg
f = 1 MHz
0.4
1.1
2
-
8
16
-
18
36
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
VDD = 75 V, RL = 5
ID 15 A, VGEN = 10 V, Rg = 1
pF
nC
-
15
30
tf
-
8
16
td(on)
-
11
22
-
58
115
-
12
24
-
22
44
-
-
36.8
-
-
100
-
0.79
1.1
V
-
103
206
ns
-
370
740
nC
-
68
-
-
35
-
tr
td(off)
VDD = 75 V, RL = 5
ID 15 A, VGEN = 7.5 V, Rg = 1
tf
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current (t = 100 μs)
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
IS = 5 A
IF = 15 A, dI/dt = 100 A/μs, TJ = 25 °C
A
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1734-Rev. A, 29-Aug-16
Document Number: 79056
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiJ494DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
100
VGS = 10 V thru 7 V
1st line
2nd line
VGS = 6 V
40
100
VGS = 5 V
1000
60
1st line
2nd line
1000
60
20
10000
80
2nd line
ID - Drain Current (A)
80
2nd line
ID - Drain Current (A)
100
10000
TC = 25 °C
40
100
20
TC = -55 °C
TC = 125 °C
VGS = 4 V
0
0
10
0
2
4
6
8
10
10
0
2
4
8
VDS - Drain-to-Source Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
10
Axis Title
0.05
2500
10000
10000
2000
1000
0.03
0.02
100
VGS = 10 V
0.01
1000
1500
1st line
2nd line
VGS = 7.5 V
2nd line
C - Capacitance (pF)
0.04
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
6
Ciss
1000
100
Coss
500
Crss
0
0
10
20
40
60
80
100
10
0
30
60
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current
Capacitance
2.5
ID = 15 A
8
1000
1st line
2nd line
6
VDS = 50 V, 75 V, 100 V
4
100
2
0
10
10
15
20
25
2nd line
RDS(on) - On-Resistance (Normalized)
10000
5
150
Axis Title
Axis Title
2nd line
VGS - Gate-to-Source Voltage (V)
120
ID - Drain Current (A)
2nd line
10
0
90
10000
ID = 15 A
2.1
VGS = 10 V
1000
1.7
VGS = 7.5 V
1.3
100
0.9
0.5
10
-50
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
2nd line
TJ - Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S16-1734-Rev. A, 29-Aug-16
1st line
2nd line
0
Document Number: 79056
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiJ494DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
0.15
2nd line
RDS(on) - On-Resistance (Ω)
10000
TJ = 150 °C
1000
1
TJ = 25 °C
1st line
2nd line
2nd line
IS - Source Current (A)
10
0.1
100
0.01
10000
ID = 15 A
0.1
1000
1st line
2nd line
100
0.05
100
TJ = 125 °C
TJ = 25 °C
0.001
0
10
0
0.2
0.4
0.6
0.8
1.0
1.2
10
0
2
4
8
10
VSD - Source-to-Drain Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
Axis Title
0.5
200
10000
0.1
10000
160
1000
-0.7
120
1st line
2nd line
2nd line
Power (W)
1000
ID = 5 mA
-0.3
1st line
2nd line
2nd line
VGS(th) - Variance (V)
6
80
100
ID = 250 μA
100
-1.1
40
-1.5
0
0.001
10
-50
-25
0
25
50
75
100 125 150
10
0.01
0.1
1
10
TJ - Temperature (°C)
2nd line
Time (s)
2nd line
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
10000
100
100 μs
10
ID limited
1 ms
1
1000
10 ms
Limited by RDS(on) (1)
1st line
2nd line
2nd line
ID - Drain Current (A)
IDM limited
100 ms 100
0.1
1s
10 s
TA = 25 °C
Single pulse
0.01
0.01
(1)
0.1
BVDSS limited
1
10
DC
100
10
1000
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S16-1734-Rev. A, 29-Aug-16
Document Number: 79056
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiJ494DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
45
10000
1000
27
1st line
2nd line
2nd line
ID - Drain Current (A)
36
18
100
9
0
10
0
25
50
75
100
125
150
TC - Case Temperature (°C)
2nd line
Current Derating a
Axis Title
Axis Title
100
10000
2.5
80
10000
2.0
1.5
1st line
2nd line
40
2nd line
Power (W)
1000
1st line
2nd line
2nd line
Power (W)
1000
60
1.0
100
20
100
0.5
0
10
0
25
50
75
100
125
150
0
10
0
25
50
75
100
125
TC - Case Temperature (°C)
2nd line
TA - Ambient Temperature (°C)
2nd line
Power, Junction-to-Case
Power, Junction-to-Ambient
150
Note
a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-1734-Rev. A, 29-Aug-16
Document Number: 79056
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiJ494DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
Duty cycle = 0.5
Notes:
0.2
PDM
0.1
0.1
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
t1
t2
t
1. Duty cycle, D = t1
2
2. Per unit base = RthJA = 65 °C/W
0.05
0.02
3. TJM - TA = PDMZthJA
Single pulse
0.01
0.0001
0.001
0.01
100
(t)
4. Surface mounted
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
1
10000
0.2
0.1
1000
0.05
0.1
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.02
Single pulse
0.01
0.0001
100
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?79056.
S16-1734-Rev. A, 29-Aug-16
Document Number: 79056
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline 1
W
E1
E
E2
W2
W3
W1
b2
D2
b
b1
L
L1
L1
A1
e
θ
D1
D
b3
b4
0.25 gauge line
Topside view
Backside view (single)
E2
W2
C
A
W3
W1
F
K
D3
D3
D2
b3
b4
Backside view (dual)
Revision: 05-Aug-2019
Document Number: 69003
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
DIM.
Vishay Siliconix
MILLIMETERS
MIN.
NOM.
INCHES
MAX.
MIN.
NOM.
MAX.
A
1.00
1.07
1.14
0.039
0.042
0.045
A1
0.00
-
0.127
0.00
-
0.005
b
0.33
0.41
0.48
0.013
0.016
0.019
b1
0.44
0.51
0.58
0.017
0.020
0.023
b2
4.80
4.90
5.00
0.189
0.193
0.197
b3
0.094
0.004
b4
0.47
0.019
c
0.20
0.25
0.30
0.008
0.010
0.012
D
5.00
5.13
5.25
0.197
0.202
0.207
D1
4.80
4.90
5.00
0.189
0.193
0.197
D2
3.86
3.96
4.06
0.152
0.156
0.160
D3
1.63
1.73
1.83
0.064
0.068
0.072
e
1.27 BSC
0.050 BSC
E
6.05
6.15
6.25
0.238
0.242
0.246
E1
4.27
4.37
4.47
0.168
0.172
0.176
E2
3.18
3.28
3.38
0.125
0.129
0.133
F
-
-
0.15
-
-
0.006
L
0.62
0.72
0.82
0.024
0.028
0.032
L1
0.92
1.07
1.22
0.036
0.042
0.048
K
0.51
0.020
W
0.23
0.009
W1
0.41
0.016
W2
2.82
0.111
W3
2.96
0.117
0°
-
10°
0°
-
10°
ECN: S19-0643-Rev. E, 05-Aug-2019
DWG: 5976
Note
• Millimeters will gover
Revision: 05-Aug-2019
Document Number: 69003
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE
5.000
(0.197)
0.510
(0.020)
2.310
(0.091)
4.061
(0.160)
0.595
(0.023)
6.250
(0.246)
8.250
(0.325)
3.630
(0.143)
0.610
(0.024)
0.410
(0.016)
2.715
(0.107)
0.860
(0.034)
1.291
(0.051)
0.710
(0.028)
0.820
(0.032)
1.905
(0.075)
1.270
(0.050)
7.250
(0.285)
Recommended Minimum Pads
Dimensions in mm (inches)
Revision: 07-Feb-12
1
Document Number: 63818
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 01-Jan-2022
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Document Number: 91000
