SIJH800E-T1-GE3

SiJH800E www.vishay.com Vishay Siliconix N-Channel 80 V (D-S) 175 °C MOSFET FEATURES PowerPAK K® 8 x 8L • TrenchFET® Gen IV power MOSFET • Fully lead (Pb)-free device • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss • 50 % smaller footprint than D2PAK (TO-263) D S 8 m m S S G 1 7.9 S 4 mm Top View S 3 S 2 G 1 • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Bottom View • Synchronous rectification PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 7.5 V Qg typ. (nC) ID (A) a Configuration D • OR-ing 80 0.00155 0.00180 140 288 Single G • Motor drive control • Battery management • Power supply N-Channel MOSFET S ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 8 x 8L SIJH800E-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) SYMBOL LIMIT VDS VGS 80 ±20 299 241 29 b 24 b 350 303 3b 70 245 333 233 3.3 b 2.3 b -55 to +175 260 ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA =70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c PD TJ, Tstg UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b Steady state RthJA 36 45 °C/W 0.36 0.45 Maximum junction-to-case (drain) Steady state RthJC Notes a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 8 x 8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S21-0540-Rev. B, 31-May-2021 Document Number: 63064 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJH800E www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 80 - - ΔVDS/TJ ID = 10 mA - 62 - VGS(th) temperature coefficient ΔVGS(th)/TJ ID = 250 μA - -11 - Gate-source threshold voltage VDS temperature coefficient mV/°C VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V Gate-source leakage IGSS VDS = 0 V, VGS = ±20 - - 100 nA Zero gate voltage drain current IDSS Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 80 V, VGS = 0 V - - 1 VDS = 80 V, VGS = 0 V, TJ = 70 °C - - 15 VGS = 10 V, ID = 20 A - 0.00122 0.00155 VGS = 7.5 V, ID = 20 A - 0.00131 0.00180 VDS = 15 V, ID = 50 A - 200 - - 10 230 - - 1100 - - 34 - - 140 210 - 106 160 VDS = 40 V, VGS = 7.5 V, ID = 20 A - 46 - - 22 - f = 1 MHz 0.2 1.1 2.2 - 20 40 - 10 20 - 52 100 μA Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 40 V, VGS = 0 V, f = 1 MHz VDS = 40 V, VGS = 10 V, ID = 20 A td(on) tr td(off) VDD = 40 V, RL = 10 Ω, ID ≅ 4 A, VGEN = 10 V, Rg = 1 Ω tf - 15 30 td(on) - 25 50 - 12 25 - 47 90 - 15 30 tr td(off) VDD = 40 V, RL = 10 Ω, ID ≅ 4 A, VGEN = 7.5 V, Rg = 1 Ω tf pF nC Ω ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 10 A, VGS = 0 V IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C - - 303 - - 350 - 0.7 1.1 V - 77 155 ns - 154 310 nC - 43 - - 35 - A ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0540-Rev. B, 31-May-2021 Document Number: 63064 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJH800E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 300 10000 10000 300 250 250 150 100 100 VGS = 4 V 50 1000 200 1st line 2nd line 1000 2nd line ID - Drain Current (A) 200 1st line 2nd line 2nd line ID - Drain Current (A) VGS = 10 V thru 5 V 150 TC = 25 °C 100 100 50 TC = 150 °C TC = -55 °C 0 0.5 1.0 1.5 2.0 2.5 0 3.0 1 2 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10000 10000 1.0E+05 Ciss 1000 1st line 2nd line VGS = 7.5 V 0.0012 VGS = 10 V 100 2nd line (pF) C - Capacitance 0.0016 0.0014 6 Axis Title Axis Title 0.0018 1.0E+04 1000 Coss 1.0E+03 100 Crss 1.0E+02 0.0010 10 0.0008 0 50 100 150 200 250 10 1.0E+01 300 0 20 40 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10000 1000 1st line 2nd line VDS = 20 V, 40 V, 64 V 100 2 10 0 0 20 40 60 80 100 120 140 160 2nd line RDS(on) - On-Resistance (Normalized) 8 6 10000 2.6 ID = 20 A 4 80 Axis Title Axis Title 10 2nd line VGS - Gate-to-Source Voltage (V) 60 ID = 20 A 2.2 VGS = 10 V 1000 1.8 VGS = 7.5 V 1.4 100 1.0 0.6 10 0.2 -50 -25 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S21-0540-Rev. B, 31-May-2021 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 3 1st line 2nd line 0 10 0 10 Document Number: 63064 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJH800E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 3.2 10000 TJ = 25 °C 1 1000 2.4 ID = 250 μA 1st line 2nd line 2nd line VGS(th) (V) 1000 1st line 2nd line 2nd line IS - Source Current (A) 2.8 TJ = 175 °C 10 2.0 100 1.6 100 0.1 1.2 0 0.2 0.4 0.6 0.8 10 0.8 10 0.01 1.0 -50 -25 0 25 50 75 100 125 150 175 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage Axis Title Axis Title 10000 0.010 10000 200 160 0.004 TJ = 150 °C 100 0.002 1000 120 1st line 2nd line 2nd line P - Power (W) 1000 0.006 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) ID = 20 A 0.008 80 100 40 TJ = 25 °C 10 0 0 2 4 6 8 0 0.01 10 0.1 1 10 100 10 1000 VGS - Gate-to-Source Voltage (V) t - Time (s) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient ID(ON) limited 1000 Axis Title IDM limited 10000 1 ms 1000 10 10 ms Limited by RDS(on) a 1st line 2nd line 2nd line ID - Drain Current (A) 100 DC, 100ms 1 100 0.1 TC = 25 °C, single pulse BVDSS limited 0.01 0.01 0.1 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Note a. VGS > minimum VGS at which RDS(on) is specified S21-0540-Rev. B, 31-May-2021 Document Number: 63064 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJH800E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 350 350 300 200 150 100 100 1000 250 1st line 2nd line 1000 2nd line P - Power (W) 300 250 1st line 2nd line 2nd line ID - Drain Current (A) 10000 400 200 150 100 100 50 50 10 0 0 25 50 75 100 125 150 175 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating a Power, Junction-to-Case 175 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S21-0540-Rev. B, 31-May-2021 Document Number: 63064 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJH800E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 0.2 Notes 0.1 PDM 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 t1 0.05 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 45 °C/W 0.02 3. TJM - TA = PDMZthJA Single pulse 0.01 0.0001 0.001 0.01 100 (t) 4. Surface mounted 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 0.2 1000 0.1 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.05 100 0.02 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63064. S21-0540-Rev. B, 31-May-2021 Document Number: 63064 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 8 x 8L BWL Case Outline 2 c D2 E3 D5 E4 W4 D6 E2 D6 W1 D5 E5 b2 E1 E z1 b e b1 z2 L1 L A2 A1 0.25 gauge line D1 ȧ Bottom view (single) A Top view (single) DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. A 1.50 1.60 1.70 0.059 0.063 MAX. 0.067 A1 0.00 - 0.127 0.000 - 0.005 A2 0.655 0.705 0.755 0.026 0.028 0.030 b 0.92 1.00 1.08 0.036 0.039 0.043 b1 1.02 1.10 1.18 0.040 0.043 0.046 b2 6.84 6.94 7.04 0.269 0.273 0.277 c 0.20 0.25 0.30 0.008 0.010 0.012 D1 7.80 7.90 8.00 0.307 0.311 0.315 D2 6.70 6.80 6.90 0.264 0.268 0.272 D5 0.37 0.47 0.57 0.015 0.019 0.022 D6 2.49 2.59 2.69 0.098 0.102 0.106 e 1.97 2.00 2.03 0.078 0.079 0.080 E 7.90 8.00 8.10 0.311 0.315 0.319 E1 6.12 6.22 6.32 0.241 0.245 0.249 E2 4.21 4.31 4.41 0.166 0.170 0.174 E3 4.92 5.02 5.12 0.194 0.198 0.202 E4 3.80 3.90 4.00 0.150 0.154 0.157 E5 0.65 0.75 0.85 0.026 0.030 0.033 L 0.61 0.68 0.75 0.024 0.027 0.030 L1 1.00 1.07 1.15 0.039 0.042 0.045 W1 0.30 0.40 0.50 0.012 0.016 0.020 W4 0.32 0.37 0.42 0.013 0.015 0.017 z1 0.45 0.55 0.65 0.018 0.022 0.026 z2 1.81 1.91 2.01 0.071 0.075 0.079  0° - 5° 0° - 5° ECN: S19-0643-Rev. B, 05-Aug-2019 DWG: 6073 Note • Millimeter will govern Revison: 05-Aug-2019 Document Number: 79736 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PADs for PowerPAK® 8 x 8L Single 8.00 (0.31) 0.50 (0.02) 4.05 (0.16) 3.55 (0.14) Y 3.99 (0.16) 4.59 (0.18) 6.90 (0.27) (0, 0) 0.44 (0.02) X 0.54 (0.02) 0.85 (0.03) 6.11 (0.24) 1.29 (0.05) 1.94 (0.08) 8.25 (0.32) 3.23 (0.13) 0.82 (0.03) 2.47 (0.10) 3.62 (0.14) 4.05 (0.16) 2.03 (0.08) 1.15 (0.05) 0.88 (0.03) Dimensions in millimeters (inches) Note • Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. Revision: 08-Apr-15 1 Document Number: 67477 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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