SiP32401A, SiP32402A
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Vishay Siliconix
1.1 V to 5.5 V, Slew Rate Controlled Load Switch
DESCRIPTION
FEATURES
SiP32401A and SiP32402A are slew rate controlled load
switches designed for 1.1 V to 5.5 V operation.
• 1.1 V to 5.5 V operation voltage range
The devices guarantee low switch on-resistance at 1.2 V
input. They feature a controlled soft-on slew rate of typical
2.5 ms that limits the inrush current for designs of heavy
capacitive load and minimizes the resulting voltage droop at
the power rails.
• Low Ron down to 1.2 V
• 62 mΩ typical from 2 V to 5 V
• Slew rate controlled turn-on: 2.5 ms at 3.6 V
• Fast shutdown load discharge for SiP32402A
Available
• Low quiescent current
< 1 μA when disabled
10.5 μA typical at VIN = 1.2 V
These devices feature low voltage control logic interface
(On/Off interface) that can interface with low voltage control
signal without extra level shifting circuit. SiP32402A also
integrates an output discharge switch that enables fast
shutdown load discharge.
• Reverse current blocking when switch is off
Both SiP32401A and SiP32402A have exceptionally low
shutdown current and provide reverse blocking to prevent
high current flowing into the power source.
APPLICATIONS
SiP32401A and SiP32402A are in TDFN4 package of
1.2 mm by 1.6 mm.
• Notebook / netbook computers
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
• PDAs / smart phones
• Tablet PC
• Portable media players
• Digital camera
• GPS navigation devices
• Data storage devices
• Optical, industrial, medical, and healthcare devices
TYPICAL APPLICATION CIRCUIT
VIN
IN
OUT
VOUT
SiP32401A, SiP32402A
C IN
4.7 µF
C OUT
0.1 µF
EN
EN
GND
GND
GND
Fig. 1 - SiP32401A, SiP32402A Typical Application Circuit
S15-1246-Rev. D, 01-Jun-15
Document Number: 63705
1
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ORDERING INFORMATION
TEMPERATURE RANGE
-40 °C to +85 °C
PACKAGE
TDFN4 1.2 mm x 1.6 mm
MARKING
PART NUMBER
Gx
SiP32401ADNP-T1GE4
Hx
SiP32402ADNP-T1GE4
Notes
• x = Lot code
• GE4 denotes halogen-free and RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
PARAMETER
LIMIT
Supply Input Voltage (VIN)
Enable Input Voltage (VEN)
-0.3 to +6
Output Voltage (VOUT)
V
-0.3 to VIN + 0.3
Maximum Continuous Switch Current (Imax.) c
Maximum Repetitive Pulsed Current (1 ms, 10 % Duty Cycle)
UNIT
-0.3 to +6
2.4
c
A
3
ESD Rating (HBM)
4000
V
Junction Temperature (TJ)
-40 to +125
°C
Thermal Resistance (θJA) a
170
°C/W
Power Dissipation (PD) a, b
324
mW
Notes
a. Device mounted with all leads and power pad soldered or welded to PC board, see PCB layout.
b. Derate 5.9 mW/°C above TA = 70 °C, see PCB layout.
c. TA = 25 °C, see PCB layout
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating/conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
PARAMETER
Input Voltage Range (VIN)
Operating Junction Temperature Range (TJ)
S15-1246-Rev. D, 01-Jun-15
LIMIT
UNIT
1.1 to 5.5
V
-40 to +125
°C
Document Number: 63705
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SPECIFICATIONS
PARAMETER
Operating Voltage c
Quiescent Current
SYMBOL
TEST CONDITIONS UNLESS SPECIFIED
VIN = 5 V, TA = -40 °C to +85 °C
(typical values are at TA = 25 °C)
UNIT
MIN. a
TYP. b
MAX. a
1.1
-
5.5
VIN = 1.2 V, EN = active
-
10.5
17
VIN = 1.8 V, EN = active
-
21
30
VIN = 2.5 V, EN = active
-
34
50
VIN = 3.6 V, EN = active
-
54
90
VIN = 4.3 V, EN = active
-
68
110
VIN = 5 V, EN = active
-
105
180
VIN
IQ
LIMITS
-40 °C to +85 °C
Off Supply Current
IQ(off)
EN = inactive, OUT = open
-
-
1
Off Switch Current
IDS(off)
EN = inactive, OUT = GND
-
-
1
IRB
VOUT = 5 V, VIN = 0 V, VEN = inactive
-
-
10
VIN = 1.2 V, IL = 100 mA, TA = 25 °C
-
66
76
VIN = 1.8 V, IL = 100 mA, TA = 25 °C
-
62
72
VIN = 2.5 V, IL = 100 mA, TA = 25 °C
-
62
72
VIN = 3.6 V, IL = 100 mA, TA = 25 °C
-
62
72
VIN = 4.3 V, IL = 100 mA, TA = 25 °C
-
62
72
Reverse Blocking Current
On-Resistance
RDS(on)
VIN = 5 V, IL = 100 mA, TA = 25 °C
On-Resistance Temp.-Coefficient
EN Input Low Voltage c
EN Input High Voltage c
-
62
72
-
4250
-
VIN = 1.2 V
-
-
0.3
VIN = 1.8 V
-
-
0.4 d
VIN = 2.5 V
-
-
0.5 d
VIN = 3.6 V
-
-
0.6 d
VIN = 4.3 V
-
-
0.7 d
VIN = 5 V
-
-
0.8 d
VIN = 1.2 V
0.9 d
-
-
VIN = 1.8 V
1.2 d
-
-
VIN = 2.5 V
1.4
d
-
-
VIN = 3.6 V
1.6
d
-
-
VIN = 4.3 V
1.7 d
-
-
TCRDS
VIL
VIH
V
μA
mΩ
ppm/°C
V
VIN = 5 V
1.8
-
-
EN Input Leakage
ISINK
VEN = 5.5 V
-1
-
1
μA
Output Pulldown Resistance
RPD
EN = inactive, TA = 25 °C (for SiP32402A only)
-
217
280
Ω
Output Turn-On Delay Time
td(on)
-
1.8
-
Output Turn-On Rise Time
t(on)
VIN = 3.6 V, RLOAD = 10 Ω, TA = 25 °C
1.2
2.5
3.8
Output Turn-Off Delay Time
td(off)
-
-
0.001
ms
Notes
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. For VIN outside this range consult typical EN threshold curve.
d. Not tested, guarantee by design.
S15-1246-Rev. D, 01-Jun-15
Document Number: 63705
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PIN CONFIGURATION
EN
4
OUT
1
Bottom View
GND
IN
3
2
GND
Fig. 2 - TDFN4 1.2 mm x 1.6 mm Package
PIN DESCRIPTION
PIN NUMBER
1
NAME
OUT
FUNCTION
This is the output pin of the switch
2
GND
Ground connection
3
IN
This is the input pin of the switch
4
EN
Enable input
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
140
120
VIN = 5 V
100
IQ - Quiescent Current (μA)
IQ - Quiescent Current (μA)
120
100
80
60
40
80
60
VIN = 3.6 V
40
20
20
VIN = 1.2 V
0
0
1.0
1.5
2.0
2.5
3.0 3.5
VIN (V)
4.0
4.5
5.0
5.5
- 40
Fig. 3 - Quiescent Current vs. Input Voltage
- 20
0
20
40
Temperature (°C)
60
80
100
Fig. 5 - Quiescent Current vs. Temperature
0.50
100
0.40
IQ(OFF) - Off Supply Current (nA)
IQ(OFF) - Off Supply Current (nA)
0.45
0.35
0.30
0.25
0.20
0.15
0.10
10
1
0.1
0.01
VIN = 5 V
VIN = 3.6 V
0.05
0.00
1.0
VIN = 1.2 V
0.001
1.5
2.0
2.5
3.0 3.5
VIN (V)
4.0
4.5
5.0
Fig. 4 - Off Supply Current vs. Input Voltage
S15-1246-Rev. D, 01-Jun-15
5.5
- 40
- 20
0
20
40
Temperature (°C)
60
80
100
Fig. 6 - Off Supply Current vs. Temperature
Document Number: 63705
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1.0
1000
0.9
100
IDS(off) - Off Switch Current (nA)
IDS(off) - Off Switch Current (nA)
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
0.8
0.7
0.6
0.5
0.4
10
0.1
0.2
1
0.01
1.5
2
2.5
3
3.5
VIN (V)
4
4.5
5
5.5
VIN = 1.2 V
0.0001
- 40
78
85
76
80
RDS - On-Resistance (mΩ)
74
72
70
IO = 2 A
68
IO = 1.2 A
66
IO = 1 A
64
62
1.5
2.0
2.5
60
80
100
75
70
65
60
55
IO = 0.1 A
3.0 3.5
VIN (V)
4.0
4.5
5.0
45
- 40
5.5
- 20
0
20
40
60
80
100
Temperature (°C)
Fig. 11 - RDS(on) vs. Temperature
300
600
550
VOUT = VIN = 5 V
VOUT = VIN
RPD - Output Pulldown Resistance (Ω)
RPD - Output Pulldown Resistance (Ω)
20
40
Temperature (°C)
VIN = 5 V
IO = 0.1 mA
Fig. 8 - RDS(on) vs. VIN
500
450
SiP32402A only
400
350
300
250
200
150
100
1.0
0
50
IO = 0.2 A
1.0
- 20
Fig. 10 - Off Switch Current vs. Temperature
Fig. 7 - Off Switch Current vs. Input Voltage
RDS - On-Resistance (mΩ)
VIN = 3.6 V
0.001
0.3
60
VIN = 5 V
1
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
280
SiP32402A only
260
240
220
200
180
160
- 40
- 20
0
20
40
60
80
VIN (V)
Temperature (°C)
Fig. 9 - Output Pull Down vs. Input Voltage
Fig. 12 - Output Pull Down vs. Temperature
S15-1246-Rev. D, 01-Jun-15
100
Document Number: 63705
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0
3
-2
2.5
td(on) - Turn On Delay Time (ms)
IIN - Input Current (nA)
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
-4
-6
-8
VIN = 0 V
VEN = 0 V
- 10
2
1.5
1
0.5
- 12
0.5
1
1.5
2
2.5 3
3.5
VOUT (V)
4
4.5
5
0
- 40
5.5
Fig. 13 - Reverse Blocking Current vs. Output Voltage
- 20
0
20
40
60
Temperature (°C)
80
100
Fig. 16 - Turn-on Delay Time vs. Temperature
0.30
5.0
4.0
td(off) - Turn Off Delay Time (μs)
VIN = 5 V
CL = 0.1 μF
RL = 10 Ω
4.5
tr - Rise Time (ms)
VIN = 5 V
CL = 0.1 μF
RL = 10 Ω
3.5
3.0
2.5
2.0
1.5
1.0
VIN = 5 V
CL = 0.1 μF
RL = 10 Ω
0.25
0.20
0.15
0.10
0.05
0.5
0.0
- 40
- 20
0
20
40
60
Temperature (°C)
80
100
Fig. 14 - Rise Time vs. Temperature
0.00
- 40
- 20
0
20
40
Temperature (°C)
60
80
100
Fig. 17 - Turn-Off Delay Time vs. Temperature
1.5
1.4
EN Threshold Voltage (V)
1.3
VIH
1.2
1.1
VIL
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
VIN (V)
Fig. 15 - EN Threshold Voltage vs. Input Voltage
S15-1246-Rev. D, 01-Jun-15
Document Number: 63705
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TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
EN
5VOUT
EN
5VOUT
3.6VOUT
3.6VOUT
1.5VOUT
IOUT for 5VOUT
1.5VOUT
IOUT for 5VOUT
IOUT for 3.6VOUT
IOUT for 3.6VOUT
IOUT for 1.5VOUT
IOUT for 1.5VOUT
2 V/Div, 2 A/Div, 2 ms/Div
Fig. 18 - Typical Turn-on Delay, Rise Time
COUT = 0.1 μF, CIN = 4.7 μF, IOUT = 1.5 A
Fig. 21 - Typical Fall Time
COUT = 0.1 μF, CIN = 4.7 μF, IOUT = 1.5 A
EN
5VOUT
EN
5VOUT
3.6VOUT
3.6VOUT
1.5VOUT
IOUT for 5VOUT
IOUT for 3.6VOUT
IOUT for 1.5VOUT
1.5VOUT
IOUT for 5VOUT
IOUT for 3.6VOUT
IOUT for 1.5VOUT
2 V/Div, 0.25 A/Div, 2 ms/Div
Fig. 19 - Typical Turn-on Delay, Rise Time
COUT = 0.1 μF, CIN = 4.7 μF, ROUT = 10 Ω
Fig. 22 - Typical Fall Time
COUT = 0.1 μF, CIN = 4.7 μF, ROUT = 10 Ω
EN
5VOUT
EN
5VOUT
3.6VOUT
3.6VOUT
1.5VOUT
1.5VOUT
IOUT for 5VOUT
IOUT for 5VOUT
IOUT for 3.6VOUT
IOUT for 3.6VOUT
IOUT for 1.5VOUT
2 V/Div, 2 A/Div, 2 ms/Div
Fig. 20 - Typical Turn-on Delay, Rise Time
COUT = 200 μF, CIN = 4.7 μF, IOUT = 1.5 A
S15-1246-Rev. D, 01-Jun-15
IOUT for 1.5VOUT
2 V/Div, 2 A/Div, 2 ms/Div
Fig. 23 - Typical Fall Time
COUT = 200 μF, CIN = 4.7 μF, IOUT = 1.5 A
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EN
EN
5VOUT
5VOUT
3.6VOUT
3.6VOUT
1.5VOUT
1.5VOUT
IOUT for 5VOUT
IOUT for 5VOUT
IOUT for 3.6VOUT
IOUT for 3.6VOUT
IOUT for 1.5VOUT
IOUT for 1.5VOUT
2 V/Div, 0.25 A/Div, 2 ms/Div
2 V/Div, 0.25 A/Div, 2 ms/Div
Fig. 24 - Typical Turn-on Delay, Rise Time
COUT = 200 μF, CIN = 4.7 μF, ROUT = 10 Ω
Fig. 25 - Typical Fall Time
COUT = 200 μF, CIN = 4.7 μF, ROUT = 10 Ω
BLOCK DIAGRAM
Reverse
Blocking
IN
OUT
Charge
Pump
Control
Logic
EN
Turn On
Slew Rate Control
Note: for SiP32402A only
GND
Fig. 26 - Functional Block Diagram
S15-1246-Rev. D, 01-Jun-15
Document Number: 63705
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PCB LAYOUT
Top
Bottom
Fig. 27 - PCB Layout for TDFN4 1.2 mm x 1.6 mm (type: FR4, size: 1" x 1", thickness: 0.062", copper thickness: 2 oz.)
DETAILED DESCRIPTION
SiP32401A and SiP32402A are advanced slew rate
controlled high side load switch consisted of a n-channel
power switch. When the device is enable the gate of the
power switch is turned on at a controlled rate to avoid
excessive in-rush current. Once fully on the gate to source
voltage of the power switch is biased at a constant level. The
design gives a flat on resistance throughout the operating
voltages. When the device is off, the reverse blocking
circuitry prevents current from flowing back to input if output
is raised higher than input. The reverse blocking mechanism
also works in case of no input applied. The SiP32402A also
integrates an output discharge switch which allows fast
output discharge.
APPLICATION INFORMATION
Input Capacitor
The SiP32401A and SiP32402A do not require an input
capacitor. To limit the voltage drop on the input supply
caused by transient inrush currents, an input bypass
capacitor is recommended. A 2.2 μF ceramic capacitor
placed as close to the VIN and GND should be enough.
Higher values capacitor can help to further reduce the
voltage drop. Ceramic capacitors are recommended for
their ability to withstand input current surge from low
impedance sources such as batteries in portable devices.
Output Capacitor
While these devices works without an output capacitor,
an 0.1 μF or larger capacitor across VOUT and GND is
recommended to accommodate load transient condition. It
also help to prevent parasitic inductance forces VOUT below
GND when switching off. Output capacitor has minimal
affect on device’s turn on slew rate time. There is no
requirement on capacitor type and its ESR.
S15-1246-Rev. D, 01-Jun-15
Enable
The EN pin is compatible with both TTL and CMOS logic
voltage levels.
Protection Against Reverse Voltage Condition
Both SiP32401A and SiP32402A contain reverse blocking
circuitry to protect the current from going to the input from
the output in case where the output voltage is higher than
the input voltage when the main switch is off. Reverse
blocking works for input voltage as low as 0 V.
Thermal Considerations
SiP32401A and SiP32402A are designed to maintain a
constant output load current. Due to physical limitations of
the layout and assembly of the device the maximum switch
current is 2.8 A, as stated in the Absolute Maximum Ratings
table. However, another limiting characteristic for the safe
operating load current is the thermal power dissipation of
the package. To obtain the highest power dissipation (and a
thermal resistance of 170 °C/W) the power pad of the device
should be connected to a heat sink on the printed circuit
board. Figure 23 shows a typical PCB layout. All copper
traces and vias for the IN and OUT pins should be sized
adequately to carry the maximum continuous current.
The maximum power dissipation in any application is
dependant on the maximum junction temperature,
TJ (max.) = 125 °C, the junction-to-ambient thermal
resistance for the TDFN4 1.2 mm x 1.6 mm package, θJ-A =
170 °C/W, and the ambient temperature, TA, which may be
formulaically expressed as:
P (max.)
=
T J (max.) - T A
θJ- A
=
125 - TA
170
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It then follows that, assuming an ambient temperature of
70 °C, the maximum power dissipation will be limited to
about 324 mW.
So long as the load current is below the 2.8 A limit, the
maximum continuous switch current becomes a function of
two things: the package power dissipation and the RDS(on) at
the ambient temperature.
As an example let us calculate the worst case maximum
load current at TA = 70 °C. The worst case RDS(on) at 25 °C
occurs at an input voltage of 1.2 V and is equal to 76 mΩ.
The RDS(on) at 70 °C can be extrapolated from this data using
the following formula:
Vishay Siliconix
Recommended Board Layout
For the best performance, all traces should be as short as
possible to minimize the inductance and parasitic effects.
The input and output capacitors should be kept as close
as possible to the input and output pins respectively.
Connecting the central exposed pad to GND, using wide
traces for input, output, and GND help reducing the case to
ambient thermal impedance.
RDS(on) (at 70 °C) = RDS(on) (at 25 °C) x (1 + TC x DT)
Where TC is 4250 ppm/°C. Continuing with the calculation
we have
RDS(on) (at 70 °C) = 76 mΩ x (1 + 0.00425 x (70 °C - 25 °C))
= 90.5 mΩ
The maximum current limit is then determined by
P (max.)
I LOAD (max.) <
R DS(on)
which in case is 1.9 A. Under the stated input voltage
condition, if the 1.9 A current limit is exceeded the internal
die temperature will rise and eventually, possibly damage
the device.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63705.
S15-1246-Rev. D, 01-Jun-15
Document Number: 63705
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Package Information
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TDFN4 1.2 x 1.6 Case Outline
D
D2
4
b
3
Pin #1 ID
(Optional)
4
K
E
E2
3
1
2
e
Index Area
(D/2 x E/2)
Bottom View
A
A1
Top View
A3
1
L
2
Side View
DIM.
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.45
0.55
0.60
0.017
0.022
0.024
A1
0.00
-
0.05
0.00
-
A3
0.15 REF. or 0.127 REF.
(1)
0.006 or 0.005
0.002
(1)
b
0.20
0.25
0.30
0.008
0.010
0.012
D
1.15
1.20
1.25
0.045
0.047
0.049
D2
0.81
0.86
0.91
0.032
0.034
0.036
e
0.50 BSC
0.020
E
1.55
1.60
1.65
0.061
0.063
0.065
E2
0.45
0.50
0.55
0.018
0.020
0.022
K
L
0.25 typ.
0.25
0.30
0.010 typ.
0.35
0.010
0.012
0.014
ECN: T16-0143-Rev. C, 18-Apr-16
DWG: 5995
Note
(1) The dimension depends on the leadframe that assembly house used.
Revision: 18-Apr-16
Document Number: 65734
1
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR TDFN4 1.2 x 1.6
0.86
0.50
3
1
2
2.0
0.55
0.20
0.50
0.20
4
0.55
0.30
Recommended Minimum Pads
Dimensions in mm
Document Number: 66558
Revision: 05-Mar-10
www.vishay.com
1
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