SiP32408, SiP32409
www.vishay.com
Vishay Siliconix
1.1 V to 5.5 V, Slew Rate Controlled Load Switch
DESCRIPTION
FEATURES
SiP32408 and SiP32409 are slew rate controlled load
switches designed for 1.1 V to 5.5 V operation.
These devices guarantee low switch on-resistance at 1.2 V
input. They feature a controlled soft-on slew rate of typical
2.5 ms that limits the inrush current for designs of heavy
capacitive load and minimizes the resulting voltage droop at
the power rails.
SiP32408 and SiP32409 feature a low voltage control logic
interface (on/off interface) that can interface with low voltage
control signals without extra level shifting circuit.
Both SiP32408 and SiP32409 have exceptionally low
shutdown current and provide reverse blocking to prevent
high current flowing into the power source.
SiP32409 integrates a output discharge circuit for fast turn
off.
Both SiP32408 and SiP32409 are available in TDFN4
package of 1.2 mm by 1.6 mm.
• 1.1 V to 5.5 V operation voltage range
• Flat row RON down to 1.2 V
• 42 m typical from 1.5 V to 5 V
• Slew rate controlled turn-on: 2.5 ms at 3.6 V
• Low quiescent current < 1 μA when disabled
10.5 μA typical at VIN = 1.2 V
Available
• Reverse current blocking when switch is off
• Output discharge (SiP32409)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• PDAs/smart phones
• Notebook/netbook computers
• Tablet PC
• Portable media players
• Digital camera
• GPS navigation devices
• Data storage devices
• Optical, industrial, medical, and healthcare devices
TYPICAL APPLICATION CIRCUIT
VIN
IN
OUT
VOUT
SiP32408, SiP32409
C IN
4.7 µF
C OUT
0.1 µF
EN
GND
EN
GND
GND
Fig. 1 - SiP32408, SiP32409 Typical Application Circuit
ORDERING INFORMATION
TEMPERATURE RANGE
-40 °C to +85 °C
PACKAGE
TDFN4 1.2 mm x 1.6 mm
MARKING
PART NUMBER
Jx
SiP32408DNP-T1-GE4
Kx
SiP32409DNP-T1-GE4
Notes
• x = lot code
• GE4 denotes halogen-free and RoHS-compliant
S20-0528-Rev. G, 06-Jul-2020
Document Number: 63717
1
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SiP32408, SiP32409
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Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
PARAMETER
LIMIT
UNIT
Supply input voltage (VIN)
-0.3 to 6
Enable input voltage (VEN)
-0.3 to 6
Output voltage (VOUT)
-0.3 to 6
Maximum continuous switch current (Imax.) c
V
3.5
Maximum repetitive pulsed current (1 ms, 10 % duty cycle) c
A
6
Maximum Non-Repetitive Pulsed Current (100 μs, EN = Active)
c
12
ESD rating (HBM)
7000
V
Junction temperature (TJ)
-40 to +150
°C
Thermal resistance (qJA) a
170
°C/W
Power dissipation (PD) a,b
735
mW
Notes
a. Device mounted with all leads and power pad soldered or welded to PC board, see PCB layout
b. Derate 5.9 mW/°C above TA = 25 °C, see PCB layout
c. TA = 25 °C, see PCB layout
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating/conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
PARAMETER
LIMIT
UNIT
Input voltage range (VIN)
1.1 to 5.5
V
Operating junction temperature range (TJ)
-40 to 125
°C
SPECIFICATIONS
PARAMETER
Operating voltage
SYMBOL
c
Quiescent current
TEST CONDITIONS UNLESS SPECIFIED
VIN = 5 V, TA = -40 °C to 85 °C
(typical values are at TA = 25 °C)
VIN
IQ
LIMITS
-40 °C to 85 °C
MIN. a
TYP. b
MAX. a
UNIT
V
1.1
-
5.5
VIN = 1.2 V, EN = active
-
10.5
17
VIN = 1.8 V, EN = active
-
21
30
VIN = 2.5 V, EN = active
-
34
50
VIN = 3.6 V, EN = active
-
54
90
VIN = 4.3 V, EN = active
-
68
110
VIN = 5 V, EN = active
-
105
180
1
Off supply current
IQ(off)
EN = inactive, OUT = open
-
-
Off switch current
IDS(off)
EN = inactive, OUT = GND
-
-
1
IRB
VOUT = 5 V, VIN = 0 V, VEN = inactive
-
-
10
VIN = 1.2 V, IL = 100 mA, TA = 25 °C
-
45
52
VIN = 1.8 V, IL = 100 mA, TA = 25 °C
-
42
50
VIN = 2.5 V, IL = 100 mA, TA = 25 °C
-
42
50
VIN = 3.6 V, IL = 100 mA, TA = 25 °C
-
42
50
VIN = 4.3 V, IL = 100 mA, TA = 25 °C
-
42
50
VIN = 5 V, IL = 100 mA, TA = 25 °C
-
44
50
-
3300
-
Reverse blocking current
On-resistance
On-resistance temp. coefficient
S20-0528-Rev. G, 06-Jul-2020
RDS(on)
TCRDS
μA
m
ppm/°C
Document Number: 63717
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SiP32408, SiP32409
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SPECIFICATIONS
PARAMETER
EN input low voltage c
EN input high voltage c
SYMBOL
LIMITS
-40 °C to 85 °C
TEST CONDITIONS UNLESS SPECIFIED
VIN = 5 V, TA = -40 °C to 85 °C
(typical values are at TA = 25 °C)
MIN. a
TYP. b
MAX. a
VIN = 1.2 V
-
-
0.3
VIN = 1.8 V
-
-
0.4 d
VIN = 2.5 V
-
-
0.5 d
VIN = 3.6 V
-
-
0.6 d
VIN = 4.3 V
-
-
0.7 d
VIN = 5 V
-
-
0.8 d
VIN = 1.2 V
0.9 d
-
-
VIN = 1.8 V
1.2 d
-
-
VIN = 2.5 V
1.4 d
-
-
VIN = 3.6 V
1.6 d
-
-
VIN = 4.3 V
d
VIL
VIH
1.7
VIN = 5 V
1.8
-
-
-
-
UNIT
V
EN input leakage
ISINK
VEN = 5.5 V
-1
-
1
μA
Output pull-down resistance
RPD
EN = inactive, TA = 25 °C, (for SiP32409 only)
-
217
280
Output turn-on delay time
td(on)
-
1.8
-
1.2
2.5
3.8
-
-
0.001
Output turn-on rise time
t(on)
Output turn-off delay time
td(off)
VIN = 3.6 V, Rload = 10 , TA = 25 °C
ms
Notes
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing
c. For VIN outside this range consult typical EN threshold curve
d. Not tested, guarantee by design
PIN CONFIGURATION
OUT
4
1
IN
2
GND
GND
EN
3
Bottom View
Fig. 2 - TDFN4 1.2 mm x 1.6 mm Package
PIN DESCRIPTION
PIN NUMBER
NAME
FUNCTION
1
IN
This is the input pin of the switch
2
GND
Ground connection
3
EN
Enable input
4
OUT
This is the output pin of the switch
S20-0528-Rev. G, 06-Jul-2020
Document Number: 63717
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SiP32408, SiP32409
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Vishay Siliconix
BLOCK DIAGRAM
Reverse
Blocking
IN
OUT
Charge
Pump
SiP32409 only
Output
Pulldown
Turn On
Slew Rate Control
Control
Logic
EN
GND
Fig. 3 - Functional Block Diagram
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
140
120
VIN = 5 V
100
IQ - Quiescent Current (μA)
IQ - Quiescent Current (μA)
120
100
80
60
40
80
60
VIN = 3.6 V
40
20
20
0
1
1.5
2
2.5
3.5
3
VIN (V)
4
4.5
5
Fig. 4 - Quiescent Current vs. Input Voltage
S20-0528-Rev. G, 06-Jul-2020
5.5
0
- 40
VIN = 1.2 V
- 20
0
20
40
Temperature (°C)
60
80
100
Fig. 5 - Quiescent Current vs. Temperature
Document Number: 63717
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TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
0.7
100
SiP32408
10
SiP32408
IIQ(OFF) - Off Supply Current (nA)
IQ(OFF) - Off Supply Current (nA)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1
1.5
2
2.5
3
3.5
VIN (V)
4
4.5
5
5.5
VIN = 5 V
1
VIN = 3.6 V
0.1
0.01
VIN = 1.2 V
0.001
0.0001
- 40
- 20
0
20
40
Temperature (°C)
60
80
100
Fig. 9 - Off Supply Current vs. Temperature
Fig. 6 - Off Supply Current vs. Input Voltage
1000
1.2
SiP32409
SiP32409
100
IQ(OFF) - Off Supply Current (nA)
IQ(OFF) - Off Supply Current (nA)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
VIN = 5 V
10
VIN = 3.6 V
1
0.1
VIN = 1.2 V
0.01
0.3
0.2
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0.001
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
VIN (V)
Fig. 10 - Off Supply Current vs. Temperature
Fig. 7 - Off Supply Current vs. Input Voltage
1.2
1000
1.0
IDS(off) - Off Switch Current (nA)
IDS(off) - Off Switch Current (nA)
1.1
0.9
0.8
0.7
0.6
0.5
0.4
100
10
VIN = 5 V
1
VIN = 3.6 V
0.1
0.01
VIN = 1.2 V
0.3
0.2
1
1.5
2
2.5
3
3.5
VIN (V)
4
4.5
5
Fig. 8 - Off Switch Current vs. Input Voltage
S20-0528-Rev. G, 06-Jul-2020
5.5
0.001
- 40
- 20
0
20
40
60
Temperature (°C)
80
100
Fig. 11 - Off Switch Current vs. Temperature
Document Number: 63717
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TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
240
54
IO = 2.5 A
52
RDS - On-Resistance (mΩ)
RPD - Output Pulldown Resistance (Ω)
56
IO = 2.0 A
IO = 1.5 A
50
IO = 1.0 A
48
IO = 0.1 A
46
44
42
40
230
225
220
215
210
205
200
38
1
1.5
2
2.5
3
3.5
VIN (V)
4
4.5
5
- 40
5.5
- 20
0
20
40
60
80
100
Temperature (°C)
Fig. 12 - RDS(on) vs. VIN
Fig. 15 - Output Pull-down Resistance vs. Temperature
900
0
SiP32409 only
VOUT = VIN
800
-2
700
IIN - Input Current (nA)
RPD - Output Pulldown Resistance (Ω)
SiP32409 only
VOUT = VIN = 5 V
235
600
500
400
300
-4
-6
VIN = 0 V
-8
200
- 10
100
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
- 12
0.5
5.5
1
1.5
2
VIN (V)
4
4.5
5
5.5
3.25
55
IO = 0.1 A
VIN = 5 V
3.00
tr - Rise Time (ms)
50
RDS - On-Resistance (mΩ)
3 3.5
VOUT (V)
Fig. 16 - Reverse Blocking Current vs. Output Voltage
Fig. 13 - Output Pull-down Resistance vs. Input Voltage
45
40
35
30
- 40
2.5
VIN = 5 V
CL = 0.1 μF
RL = 10 Ω
2.75
2.50
2.25
2.00
- 20
0
20
40
60
80
Temperature (°C)
Fig. 14 - RDS(on) vs. Temperature
S20-0528-Rev. G, 06-Jul-2020
100
1.75
- 40
- 20
0
20
40
Temperature (°C)
60
80
100
Fig. 17 - Rise Time vs. Temperature
Document Number: 63717
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TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
0.20
VIN = 5 V
CL = 0.1 μF
RL = 10 Ω
2.0
VIN = 5 V
CL = 0.1 μF
RL = 10 Ω
0.18
td(off) - Turn-Off Delay Time (μs)
td(on) - Turn-On Delay Time (ms)
2.2
1.8
1.6
1.4
0.16
0.14
0.12
0.10
0.08
1.2
- 40
- 20
0
20
40
60
80
0.06
- 40
100
Temperature (°C)
- 20
0
20
40
Temperature (°C)
60
80
100
Fig. 18 - Turn-On Delay Time vs. Temperature
Fig. 19 - Turn-Off Delay Time vs. Temperature
1.6
1.5
EN Threshold Voltage (V)
1.4
1.3
1.2
VIH
1.1
1.0
VIL
0.9
0.8
0.7
0.6
0.5
1
1.5
2
2.5
3
3.5
VIN (V)
4
4.5
5
5.5
Fig. 20 - EN Threshold Voltage vs. Input Voltage
S20-0528-Rev. G, 06-Jul-2020
Document Number: 63717
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TYPICAL WAVEFORMS
EN
5VOUT
EN
5VOUT
3.6VOUT
3.6VOUT
1.5VOUT
IOUT for 5VOUT
1.5VOUT
IOUT for 5VOUT
IOUT for 3.6VOUT
IOUT for 3.6VOUT
IOUT for 1.5VOUT
IOUT for 1.5VOUT
2 V/Div, 2 A/Div, 2 μs/Div
2 V/Div, 2 A/Div, 2 ms/Div
Fig. 21 - Typical Turn-on Delay, Rise Time
COUT = 0.1 μF, CIN = 4.7 μF, IOUT = 1.5 A
Fig. 24 - Typical Fall Time
COUT = 0.1 μF, CIN = 4.7 μF, IOUT = 1.5 A
EN
5VOUT
EN
5VOUT
3.6VOUT
3.6VOUT
1.5VOUT
IOUT for 5VOUT
IOUT for 3.6VOUT
IOUT for 1.5VOUT
2 V/Div, 0.25 A/Div, 2 ms/Div
1.5VOUT
IOUT for 5VOUT
IOUT for 3.6VOUT
IOUT for 1.5VOUT
2 V/Div, 0.25 A/Div, 2 μs/Div
Fig. 22 - Typical Turn-on Delay, Rise Time
COUT = 0.1 μF, CIN = 4.7 μF, ROUT = 10
Fig. 25 - Typical Fall Time
COUT = 0.1 μF, CIN = 4.7 μF, ROUT = 10
EN
5VOUT
EN
5VOUT
3.6VOUT
3.6VOUT
1.5VOUT
1.5VOUT
IOUT for 5VOUT
IOUT for 5VOUT
IOUT for 3.6VOUT
IOUT for 3.6VOUT
IOUT for 1.5VOUT
2 V/Div, 2 A/Div, 2 ms/Div
Fig. 23 - Typical Turn-on Delay, Rise Time
COUT = 200 μF, CIN = 4.7 μF, IOUT = 1.5 A
S20-0528-Rev. G, 06-Jul-2020
IOUT for 1.5VOUT
2 V/Div, 2 A/Div, 2 ms/Div
Fig. 26 - Typical Fall Time
COUT = 200 μF, CIN = 4.7 μF, IOUT = 1.5 A
Document Number: 63717
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EN
EN
5VOUT
5VOUT
3.6VOUT
3.6VOUT
1.5VOUT
1.5VOUT
IOUT for 5VOUT
IOUT for 5VOUT
IOUT for 3.6VOUT
IOUT for 3.6VOUT
IOUT for 1.5VOUT
IOUT for 1.5VOUT
2 V/Div, 0.25 A/Div, 2 ms/Div
2 V/Div, 0.25 A/Div, 2 ms/Div
Fig. 27 - Typical Turn-on Delay, Rise Time
COUT = 200 μF, CIN = 4.7 μF, ROUT = 10
Fig. 28 - Typical Fall Time
COUT = 200 μF, CIN = 4.7 μF, ROUT = 10
DETAILED DESCRIPTION
Enable
SiP32408 and SiP32409 are advanced slew rate controlled
high side load switches consisted of a n-channel power
switch. When the device is enable the gate of the power
switch is turned on at a controlled rate to avoid excessive
in-rush current. Once fully on the gate to source voltage of
the power switch is biased at a constant level. The design
gives a flat on resistance throughout the operating voltages.
When the device is off, the reverse blocking circuitry
prevents current from flowing back to input if output is
raised higher than input. The reverse blocking mechanism
also works in case of no input applied.
The EN pin is compatible with both TTL and CMOS logic
voltage levels. Enable pin voltage can be above IN once it is
within the absolute maximum rating range.
For output voltage slew rate control, EN is required to have
at least 50 μs delay after the input voltage get ready to
enable the device.
Protection Against Reverse Voltage Condition
APPLICATION INFORMATION
SiP32408 and SiP32409 contain a reverse blocking circuitry
to protect the current from going to the input from the output
in case where the output voltage is higher than the input
voltage when the main switch is off. Reverse blocking works
for input voltage as low as 0 V.
Input Capacitor
Thermal Considerations
SiP32408 and SiP32409 do not require an input capacitor.
To limit the voltage drop on the input supply caused by
transient inrush currents, an input bypass capacitor is
recommended. A 2.2 μF ceramic capacitor placed as close
to the VIN and GND should be enough. Higher values
capacitor can help to further reduce the voltage drop.
Ceramic capacitors are recommended for their ability to
withstand input current surge from low impedance sources
such as batteries in portable devices.
SiP32408 and SiP32409 are designed to maintain a
constant output load current. Due to physical limitations of
the layout and assembly of the device the maximum switch
current is 3.5 A, as stated in the Absolute Maximum Ratings
table. However, another limiting characteristic for the safe
operating load current is the thermal power dissipation of
the package. To obtain the highest power dissipation (and a
thermal resistance of 170 °C/W) the power pad of the device
should be connected to a heat sink on the printed circuit
board. Fig. 21 shows a typical PCB layout. All copper traces
and vias for the in and out pins should be sized adequately
to carry the maximum continuous current.
The maximum power dissipation in any application is
dependent on the maximum junction temperature,
TJ(max.) = 125 °C, the junction-to-ambient thermal resistance
for the TDFN4 1.2 mm x 1.6 mm package, J-A = 170 °C/W,
and the ambient temperature, TA, which may be
formulaically expressed as:
Output Capacitor
While these devices works without an output capacitor,
an 0.1 μF or larger capacitor across VOUT and GND is
recommended to accommodate load transient condition. It
also help to prevent parasitic inductance forces VOUT below
GND when switching off. Output capacitor has minimal
affect on device’s turn on slew rate time. There is no
requirement on capacitor type and its ESR.
S20-0528-Rev. G, 06-Jul-2020
P (max.)
=
T J (max.) - T A
θJ- A
=
125 - TA
170
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It then follows that, assuming an ambient temperature of
70 °C, the maximum power dissipation will be limited to
about 324 mW.
So long as the load current is below the 3.5 A limit, the
maximum continuous switch current becomes a function of
two things: the package power dissipation and the RDS(on) at
the ambient temperature.
As an example let us calculate the worst case maximum
load current at TA = 70 °C. The worst case RDS(on) at 25 °C
occurs at an input voltage of 1.2 V and is equal to 52 m.
The RDS(on) at 70 °C can be extrapolated from this data using
the following formula:
RDS(on) (at 70 °C) = RDS(on) (at 25 °C) x (1 + TC x DT)
Where TC is 3300 ppm/°C. Continuing with the calculation
we have
RDS(on) (at 70 °C) = 52 m x (1 + 0.0033 x (70 °C - 25 °C))
= 60 m
The maximum current limit is then determined by
Switch Non-Repetitive Pulsed Current
SiP32408 and SiP32409 can withstand inrush current of up
to 12 A for 100 μs at 25 °C when heavy capacitive loads are
connected and the part is already enabled.
Recommended Board Layout
For the best performance, all traces should be as short as
possible to minimize the inductance and parasitic effects.
The input and output capacitors should be kept as close
as possible to the input and output pins respectively.
Connecting the central exposed pad to GND, using wide
traces for input, output, and GND help reducing the case to
ambient thermal impedance.
P (max.)
I LOAD (max.) <
R DS(ON )
which in this case is 2.3 A. Under the stated input voltage
condition, if the 2.3 A current limit is exceeded the internal
die temperature will rise and eventually, possibly damage
the device.
Reverse
Blocking
IN
OUT
Charge
Pump
Control Logic
Input Buffer
EN
Control and Drive
VOUT > VIN
Detect
Pull Down
Circuit
When VOUT is 0.8 V above the VIN, pull down circuit
will be activated. It connects the EN to GND with a
resistance of around 1 kΩ.
Active EN Pull Down for Reverse Blocking
When an internal circuit detects the condition of VOUT 0.8 V
higher than VIN, it will turn on the pull down circuit connected
to EN, forcing the switching off. The pull down value is about
1 k.
Pulse Current Capability
The device is mounted on the evaluation board shown in the
PCB layout section. It is loaded with pulses of 5 A and 1 ms
for periods of 4.6 ms.
5A
1 ms
180 mA
4.6 ms
SiP32408 and SiP32409 can safely support 5 A pulse
current repetitively at 25 °C.
S20-0528-Rev. G, 06-Jul-2020
Document Number: 63717
10
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP32408, SiP32409
www.vishay.com
Vishay Siliconix
EVALUATION BOARD LAYOUT
Top
Bottom
Fig. 29 - Evaluation board Layout for TDFN4 1.2 mm x 1.6 mm (type: FR4, size: 1" x 1", thickness: 0.062", copper thickness: 2 oz.)
S20-0528-Rev. G, 06-Jul-2020
Document Number: 63717
11
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP32408, SiP32409
www.vishay.com
Vishay Siliconix
PRODUCT SUMMARY
Part number
SiP32408
SiP32409
Description
1.1 V to 5.5 V, 42 m, 2.5 ms rise time,
bidirectional off isolation
1.1 V to 5.5 V, 42 m, 2.5 ms rise time,
bidirectional off isolation, output discharge
Configuration
Single
Single
Slew rate time (μs)
2500
2500
On delay time (μs)
1800
1800
Input voltage min. (V)
1.1
1.1
Input voltage max. (V)
5.5
5.5
On-resistance at input voltage min. (m)
45
45
On-resistance at input voltage max. (m)
42
42
Quiescent current at input voltage min. (μA)
10.5
10.5
Quiescent current at input voltage max. (μA)
105
105
Output discharge (yes / no)
No
Yes
Reverse blocking (yes / no)
Yes
Yes
Continuous current (A)
3.5
3.5
TDFN4
TDFN4
1.2 x 1.6 x 0.5
1.2 x 1.6 x 0.5
Package type
Package size (W, L, H) (mm)
Status code
2
2
Product type
Slew rate
Slew rate
Applications
Computers, consumer, industrial,
healthcare, networking, portable
Computers, consumer, industrial,
healthcare, networking, portable
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63717.
S20-0528-Rev. G, 06-Jul-2020
Document Number: 63717
12
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TDFN4 1.2 x 1.6 Case Outline
D
D2
4
b
3
Pin #1 ID
(Optional)
4
K
E
E2
3
1
2
e
Index Area
(D/2 x E/2)
Bottom View
A
A1
Top View
A3
1
L
2
Side View
DIM.
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.45
0.55
0.60
0.017
0.022
0.024
A1
0.00
-
0.05
0.00
-
A3
0.15 REF. or 0.127 REF.
(1)
0.006 or 0.005
0.002
(1)
b
0.20
0.25
0.30
0.008
0.010
0.012
D
1.15
1.20
1.25
0.045
0.047
0.049
D2
0.81
0.86
0.91
0.032
0.034
0.036
e
0.50 BSC
0.020
E
1.55
1.60
1.65
0.061
0.063
0.065
E2
0.45
0.50
0.55
0.018
0.020
0.022
K
L
0.25 typ.
0.25
0.30
0.010 typ.
0.35
0.010
0.012
0.014
ECN: T16-0143-Rev. C, 18-Apr-16
DWG: 5995
Note
(1) The dimension depends on the leadframe that assembly house used.
Revision: 18-Apr-16
Document Number: 65734
1
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR TDFN4 1.2 x 1.6
0.86
0.50
3
1
2
2.0
0.55
0.20
0.50
0.20
4
0.55
0.30
Recommended Minimum Pads
Dimensions in mm
Document Number: 66558
Revision: 05-Mar-10
www.vishay.com
1
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Revision: 01-Jan-2022
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Document Number: 91000