SiP32460, SiP32461, SiP32462
www.vishay.com
Vishay Siliconix
50 m, Slew Rate Controlled Load Switch in WCSP
DESCRIPTION
FEATURES
The SiP32460, SiP32461, and SiP32462 are slew rate
controlled integrated high side load switches that operate
over the input voltage range from 1.2 V to 5.5 V.
• Low input voltage, 1.2 V to 5.5 V
• Low Ron, 54 m/typ. at 3 V
• Slew rate control
This series of design features slew rate control, reverse
blocking when switch is off, output discharge, and control
logic pulldown. The devices are logic high enabled.
• Compatible with 1.2 V to 3.3 V logic
• 7.5 μs turn-on time at 5 V (SiP32462)
Available
• Reverse current blocking when switch is off
The SiP32460, SIP32461, and SiP32462 are available
in compact wafer level WCSP package, WCSP4
0.76 mm x 0.76 mm with 0.4 mm pitch.
• Integrated output discharge switch (SiP32461)
• Integrated pulldown resistor at “EN”
• For enable “low” see SiP32467 and SiP32468
• 4-bump WCSP package
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Smart phones
• GPS and portable media players
• Tablet computers
• Medical and healthcare equipment
• Industrial and instrumentation
• Game consoles
TYPICAL APPLICATION CIRCUIT
VIN
IN
OUT
VOUT
SiP32460, SiP32461, SiP32462
CIN
COUT
EN
GND
EN
GND
GND
Fig. 1 - Typical Application Circuit
ORDERING INFORMATION
PACKAGE
ton
(μs)
SiP32460DB-T2-GE1
WCSP4 (2x2), 0.4 mm pitch
300
SiP32461DB-T2-GE1
WCSP4 (2x2), 0.4 mm pitch
300
SiP32462DB-T2-GE1
WCSP4 (2x2), 0.4 mm pitch
7.5
No
PART NUMBER
S20-0532-Rev. E, 06-Jul-2020
MARK CODE
TEMPERATURE RANGE
No
AF
-40 °C to +85 °C
Yes
AG
-40 °C to +85 °C
AH
-40 °C to +85 °C
RDISCHARGE
Document Number: 67754
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SiP32460, SiP32461, SiP32462
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
CONDITIONS
LIMIT
Reference to GND
-0.3 to 6.5
Output voltage VOUT
Reference to GND
-0.3 to 6.5
Output voltage VOUT
Pulse at 1 ms reference to GND a
-1.6
Reference to GND
-0.3 to 6.5
Supply input voltage VIN
Enable input voltage EN
Maximum continuous switch current
UNIT
V
1.2
Maximum pulse switch current
Pulse at 1 ms, 10 % duty cycle
A
2
ESD rating (HBM)
4000
V
Thermal resistance
205
°C/W
300
mW
TA = 25 °C
Maximum power dissipation
Temperature
Operating temperature
-40 to +85
Operating junction temperature
125
Storage temperature
°C
-65 to +150
Note
a. Negative current injection up to 300 mA
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
ELECTRICAL PARAMETER
MINIMUM
TYPICAL
MAXIMUM
Input voltage (VIN)
1.2
-
5.5
Output voltage (VOUT)
1.2
-
5.5
UNIT
V
SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
VIN = 1.2 V to 5.5 V, TA = -40 °C to +85 °C
(typical values are at 25 °C)
LIMITS
MIN.
TYP.
MAX.
UNIT
Power Supply
Quiescent current
IQ
VIN = 3.3 V, IOUT = 0 mA
-
4.5
7
Shutdown current
ISD
OUT = GND
-
0.01
2
Off switch current
IDS(off)
EN = GND, OUT = GND
-
0.01
2
OUT = 5 V, IN = 1.2 V, EN = 0 V, (measured at IN pin)
-
0.01
1
OUT = 5 V, IN = 0 V, EN = 0 V, (measured at IN pin)
-
0.01
1
Reverse blocking current
I(in)RB
μA
Switch Resistance
On resistance
RDS(on)
Discharge switch on resistance
RPD
EN pin pulldown resistor
REN
On resistance temperature
coefficient
IOUT = 500 mA, VIN = 1.2 V, TA = 25 °C
-
95
150
IOUT = 500 mA, VIN = 1.5 V, TA = 25 °C
-
80
120
IOUT = 500 mA, VIN = 1.8 V, TA = 25 °C
-
70
100
IOUT = 500 mA, VIN = 3 V, TA = 25 °C
-
54
65
IOUT = 500 mA, VIN = 5 V, TA = 25 °C
-
50
65
When VIN = 3 V at 25 °C
-
80
-
When VIN = 1.8 V at 25 °C
-
< 200
-
EN = 1.2 V
1
2.6
5
M
-
2800
-
ppm/°C
TCRDS
m
On/off Logic
EN input low voltage
VIL
VIN = 1.5 V
0.4
-
-
EN input high voltage
VIH
VIN = 5.5 V
-
-
1
S20-0532-Rev. E, 06-Jul-2020
V
Document Number: 67754
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SiP32460, SiP32461, SiP32462
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Vishay Siliconix
SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
VIN = 1.2 V to 5.5 V, TA = -40 °C to +85 °C
(typical values are at 25 °C)
ton_DLY
tr
LIMITS
MIN.
TYP.
MAX.
RLOAD = 500 , CL = 0.1 μF, VIN = 5 V
-
130
-
RLOAD = 500 , CL = 0.1 μF, VIN = 5 V
-
170
-
UNIT
Switching Speed
Switch turn-on delay time
(SiP32461)
Switch turn-on rise time
(SiP32461)
μs
Switch turn-on time (including
turn-on delay and rise time
(SiP32462, fast switching)
ton
RLOAD = 500 , CL = 0.1 μF, VIN = 5 V
-
7.5
20
Switch turn-off delay time
toff
RLOAD = 500 , CL = 0.1 μF, (50 % VIN to 90 % VOUT)
-
2
-
PIN CONFIGURATION
Index-Bump A1
1
OUT
A
A
B
GND
2
IN
2
IN
1
OUT
W
A
D
B
EN
Backside
EN
GND
Bumpside
Fig. 2 - WCSP 2 x 2 Package
DEVICE MARKING
Row 1
Dot + W
: dot is A1 locator plus week code
Row 2
AB
: mark code for part number
SiP32460 = AF
SiP32461 = AG
SiP32462 = AH
PIN DESCRIPTION (WSCP package)
PIN#
A1
NAME
OUT
A2
IN
B1
GND
B2
EN
FUNCTION
Switch output
Switch input
Ground connection
Switch on/off control. A pulldown resistor is integrated
TRUTH TABLE
EN
SWITCH
1
On
0
Off
S20-0532-Rev. E, 06-Jul-2020
Document Number: 67754
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SiP32460, SiP32461, SiP32462
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Vishay Siliconix
BLOCK DIAGRAM
Reverse
Blocking
IN
EN
OUT
Control
Logic
Charge
Pump
Turn On
Slew Rate
Control
GND
for SiP32461 only
Fig. 3 - Functional Block Diagram
S20-0532-Rev. E, 06-Jul-2020
Document Number: 67754
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SiP32460, SiP32461, SiP32462
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Vishay Siliconix
7
7
6
6
IQ - Quiescent Current (μA)
IQ - Quiescent Current (μA)
TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
5
4
3
2
VIN = 5.5 V
VIN = 5.0 V
5
VIN = 3.3 V
4
VIN = 2.5 V
3
2
VIN = 1.2 V
1
1
0
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
- 40
5.5
- 20
0
VIN (V)
60
80
100
20
250
SiP32461
OUT = OPEN
SiP32460, SiP32462
OUT = OPEN
IQ(OFF) - Off Supply Current (nA)
200
150
100
50
0
15
10
5
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1.0
5.5
1.5
2.0
2.5
VIN (V)
3.0
3.5
4.0
4.5
5.0
5.5
VIN (V)
Fig. 8 - Off Supply Current vs. Input Voltage
Fig. 5 - Off Supply Current vs. Input Voltage
10 000
100
SiP32461
1000
SiP32460, SiP32462
VIN = 5.5 V
IIQ(OFF) - Off Supply Current (nA)
IIQ(OFF) - Off Supply Current (nA)
40
Fig. 7 - Quiescent Current vs. Temperature
Fig. 4 - Quiescent Current vs. Input Voltage
IQ(OFF) - Off Supply Current (nA)
20
Temperature (°C)
100
VIN = 5.0 V
10
VIN = 3.3 V
1
0.1
VIN = 2.5 V
0.01
10
VIN = 5.5 V
VIN = 5.0 V
1
0.1
VIN = 3.3 V
0.01
VIN = 1.2 V
VIN = 1.2 V
VIN = 2.5 V
0.001
0.001
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
Fig. 6 - Off Supply Current vs. Temperature
S20-0532-Rev. E, 06-Jul-2020
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
Fig. 9 - Off Supply Current vs. Temperature
Document Number: 67754
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SiP32460, SiP32461, SiP32462
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
250
10 000
1000
200
IDS(off) - Off Switch Current (nA)
IDS(off) - Off Switch Current (nA)
IN Current
OUT = GND
150
100
50
VIN = 5.5 V
100
VIN = 5.0 V
10
VIN = 3.3 V
1
VIN = 2.5 V
0.1
0.01
0
0.001
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
- 40
0
20
60
80
100
Fig. 10 - Off Switch Current vs. Input Voltage
Fig. 13 - Off Switch Current vs. Temperature
64
IO = 0.2 A
VIN = 3.3 V
62
100
RDS - On-Resistance (mΩ)
60
95
90
85
80
IO = 0.5 A
75
IO = 1.5 A
70
IO = 1.0 A
65
IO = 0.1 A
55
1.0
1.5
58
56
54
52
50
48
46
44
42
IO = 0.2 A
50
2.0
40
2.5
3.0
3.5
4.0
4.5
5.0
- 40
5.5
- 20
0
20
40
60
80
100
Temperature (°C)
VIN (V)
Fig. 14 - RDS(on) vs. Temperature
Fig. 11 - RDS(on) vs. Input Voltage
180
0
- 50
SiP32460, SiP32461
VIN = 5 V
CL = 0.1 μF
R L = 500 Ω
170
td(on) - Turn-On Delay Time (μs)
- 100
VIN = 1.2 V
- 150
IIN - Input Current (nA)
40
Temperature (°C)
105
RDS - On-Resistance (mΩ)
- 20
VIN (V)
110
60
VIN = 1.2 V
- 200
- 250
VIN = 0 V
- 300
- 350
- 400
- 450
- 500
- 550
160
150
140
130
120
110
- 600
100
- 650
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
VOUT (V)
Fig. 12 - Reverse Blocking Current vs. Output Voltage
S20-0532-Rev. E, 06-Jul-2020
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
Fig. 15 - Turn-on Delay Time vs. Temperature
Document Number: 67754
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SiP32460, SiP32461, SiP32462
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TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
10
0
-200
td(on) - Turn-On Delay Time (μs)
VIN = 1.2 V
IIN - Input Current (nA)
-400
VIN = 0 V
-600
-800
-1000
-1200
VOUT = 5 V
-1400
SiP32462
VIN = 5 V
CL = 0.1 μF
R L = 500 Ω
9
8
7
6
-1600
5
-1800
- 40
- 20
0
20
40
60
80
- 40
100
- 20
0
Temperature (°C)
20
40
80
100
Temperature (°C)
Fig. 19 - Turn-on Delay Time vs. Temperature
Fig. 16 - Reverse Blocking Current vs. Temperature
0.9
220
0.85
SiP32460, SiP32461
VIN = 5 V
CL = 0.1 μF
RL = 500 Ω
210
0.8
VIH
0.75
200
VIL
tr - Rise Time (μs)
EN Threshold Voltage (V)
60
0.7
0.65
0.6
0.55
190
180
170
160
0.5
150
0.45
140
0.4
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
- 40
5.5
- 20
0
40
60
80
100
Temperature (°C)
VIN (V)
Fig. 20 - Rise Time vs. Temperature
Fig. 17 - EN Threshold Voltage vs. Input Voltage
10.00
1.0
td(off) - Turn-Off Delay Time (μs)
SiP32462
VIN = 5 V
CL = 0.1 μF
RL = 500 Ω
0.9
tr - Rise Time (μs)
20
0.8
0.7
0.6
0.5
SiP32460, SiP32462
VIN = 5 V
CL = 0.1 μF
RL = 500 Ω
9.00
8.00
7.00
6.00
5.00
- 40
- 20
0
20
40
60
80
Temperature (°C)
Fig. 18 - Rise Time vs. Temperature
S20-0532-Rev. E, 06-Jul-2020
100
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
Fig. 21 - Turn-off Delay Time vs. Temperature
Document Number: 67754
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TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
85
SiP32461
VIN = 5 V
CL = 0.1 μF
RL = 500 Ω
4.00
SiP32461
RPD - Output Pulldown Resistance (Ω)
td(off) - Turn-Off Delay Time (μs)
5.00
3.00
2.00
1.00
80
VIN = 3.3 V
IOUT = 5 mA
75
70
65
60
55
0.00
- 40
- 20
0
20
40
60
80
100
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
Temperature (°C)
Fig. 22 - Turn-off Delay Time vs. Temperature
Fig. 23 - Output Pulldown Resistance vs. Temperature
TYPICAL WAVEFORMS
SiP32460/SiP32461
SiP32460/SiP32461
VEN (2V/div)
VEN (500mV/div)
VOUT (500mV/div)
VOUT (2V/div)
IOUT (10mA/div)
Time (100μs/div)
Fig. 24 - Turn-on Time
S20-0532-Rev. E, 06-Jul-2020
VIN = 1.2V
RL = 500Ω
CL = 0.1μF
IOUT (20mA/div)
Time (100μs/div)
VIN = 5.0V
RL = 500Ω
CL = 0.1μF
Fig. 25 - Turn-on Time
Document Number: 67754
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TYPICAL WAVEFORMS
VEN (500mV/div)
SiP32460/SiP32461
SiP32460/SiP32461
VEN (2V/div)
VOUT (500mV/div)
VOUT (2V/div)
IOUT (10mA/div)
IOUT (20mA/div)
VIN = 1.8V
RL = 500Ω
CL = 0.1μF
Time (100μs/div)
Time (100μs/div)
VIN = 5.5V
RL = 500Ω
CL = 0.1μF
Fig. 29 - Turn-on Time
Fig. 26 - Turn-on Time
SiP32460/SiP32461
SiP32462
VEN (500mV/div)
VEN (2V/div)
VOUT (500mV/div)
VOUT (2V/div)
IOUT (10mA/div)
IOUT (20mA/div)
Time (100μs/div)
VIN = 3.3V
RL = 500Ω
CL = 0.1μF
Fig. 30 - Turn-on Time
Fig. 27 - Turn-on Time
VEN (500mV/div)
SiP32462
VOUT (500mV/div)
Fig. 28 - Turn-on Time
S20-0532-Rev. E, 06-Jul-2020
SiP32462
VEN (2V/div)
VOUT (2V/div)
IOUT (10mA/div)
Time (10μs/div)
Time (100μs/div)
VIN = 1.2V
RL = 500Ω
CL = 0.1μF
VIN = 1.8V
RL = 500Ω
CL = 0.1μF
IOUT (50mA/div)
Time (2μs/div)
VIN = 5.5V
RL = 500Ω
CL = 0.1μF
Fig. 31 - Turn-on Time
Document Number: 67754
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TYPICAL WAVEFORMS
SiP32460/SiP32462
SiP32462
VEN (1V/div)
VEN (500mV/div)
VOUT (1V/div)
VOUT (500mV/div)
IOUT (20mA/div)
IOUT (10mA/div)
VIN = 3.3V
RL = 500Ω
CL = 0.1μF
Time (4μs/div)
VIN = 1.2V
RL = 500Ω
CL = 0.1μF
Time (100μs/div)
Fig. 35 - Turn-off Time
Fig. 32 - Turn-on Time
SiP32462
VEN (500mV/div)
SiP32460/SiP32462
VEN (2V/div)
VOUT (2V/div)
VOUT (500mV/div)
IOUT (20mA/div)
IOUT (10mA/div)
VIN = 5.0V
RL = 500Ω
CL = 0.1μF
Time (4μs/div)
VIN = 1.8V
RL = 500Ω
CL = 0.1μF
Time (40μs/div)
Fig. 36 - Turn-off Time
Fig. 33 - Turn-on Time
SiP32461
SiP32460/SiP32462
VEN (1V/div)
VEN (500mV/div)
VOUT (500mV/div)
VOUT (1V/div)
IOUT (10mA/div)
IOUT (10mA/div)
Time (100μs/div)
Fig. 34 - Turn-off Time
S20-0532-Rev. E, 06-Jul-2020
VIN = 3.3V
RL = 500Ω
CL = 0.1μF
Time (100μs/div)
VIN = 1.2V
RL = 500Ω
CL = 0.1μF
Fig. 37 - Turn-off Time
Document Number: 67754
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TYPICAL WAVEFORMS
SiP32460/SiP32462
SiP32461
VEN (500mV/div)
VEN (2V/div)
VOUT (500mV/div)
VOUT (2V/div)
IOUT (10mA/div)
IOUT (20mA/div)
VIN = 5.0V
RL = 500Ω
CL = 0.1μF
Time (100μs/div)
VIN = 1.8V
RL = 500Ω
CL = 0.1μF
Time (20μs/div)
Fig. 41 - Turn-off Time
Fig. 38 - Turn-off Time
SiP32461
SiP32460/SiP32462
VEN (2V/div)
VEN (2V/div)
VOUT (2V/div)
VOUT (2V/div)
IOUT (20mA/div)
VIN = 5.5V
RL = 500Ω
CL = 0.1μF
Time (100μs/div)
IOUT (20mA/div)
VIN = 3.3V
RL = 500Ω
CL = 0.1μF
Time (20μs/div)
Fig. 42 - Turn-off Time
Fig. 39 - Turn-off Time
SiP32461
VEN (2V/div)
SiP32461
VEN (2V/div)
VOUT (2V/div)
IOUT (20mA/div)
Time (20μs/div)
Fig. 40 - Turn-off Time
S20-0532-Rev. E, 06-Jul-2020
VIN = 5.0V
RL = 500Ω
CL = 0.1μF
VOUT (2V/div)
IOUT (20mA/div)
Time (20μs/div)
VIN = 5.5V
RL = 500Ω
CL = 0.1μF
Fig. 43 - Turn-off Time
Document Number: 67754
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DETAILED DESCRIPTION
SiP32460, SiP32461, and SiP32462 are high side, slew rate
controlled, load switches. They incorporate a negative
charge pump at the gate to keep the gate to source voltage
high when turned on. This keeps the on resistance low at
lower input voltages. SiP32460 and SiP32461 are designed
with slow slew rate to minimize inrush current during turn on.
These devices have a reverse blocking circuit, when
disabled, to prevent the current from going back to the input
when the output voltage is higher than the input voltage. The
SiP32460 and SiP32462 can be used as bidirectional
switches and can be turned on and off when power is at
either in or out. The SiP32461 has an output pulldown
resistor to discharge the output capacitance when the
device is off.
APPLICATION INFORMATION
Input Capacitor
While a bypass capacitor on the input is not required, a
4.7 μF or larger capacitor for CIN is recommended in almost
all applications. The bypass capacitor should be placed as
physically close as possible to the input pin to be effective
in minimizing transients on the input. Ceramic capacitors are
recommended over tantalum because of their ability to
withstand input current surges from low impedance sources
such as batteries in portable devices.
Output Capacitor
A 0.1 μF capacitor across VOUT and GND is recommended
to insure proper slew operation. There is inrush current
through the output MOSFET and the magnitude of the
inrush current depends on the output capacitor, the bigger
the COUT the higher the inrush current. There is no ESR or
capacitor type requirement.
Enable
The EN pin is compatible with CMOS logic voltage levels. It
requires at least 0.4 V or below to fully shut down the device
and 1 V or above to fully turn on the device. There is a
2.6 M resistor connected between EN pin and GND pin.
Protection Against Reverse Voltage Condition
This device contains a reverse blocking circuit. When
disabled (VEN less than 0.4 V) this circuit keeps the output
current from flowing back to the input when the output
voltage is higher than the input voltage.
Thermal Considerations
Due to physical limitations of the layout and assembly of the
device the maximum switch current is 1.2 A as stated in the
Absolute Maximum Ratings table. However, another limiting
S20-0532-Rev. E, 06-Jul-2020
characteristic for the safe operating load current is the
thermal power dissipation of the package.
The maximum power dissipation in any application is
dependent on the maximum junction temperature,
TJ(max.) = 125 °C, the junction-to-ambient thermal
resistance, J-A = 205 °C/W, and the ambient temperature,
TA, which may be expressed as:
125 - T A
T J(max.) - T A
P (max.) = -------------------------------- = ---------------------- JA
205
It then follows that, assuming an ambient temperature of
70 °C, the maximum power dissipation will be limited to
about 268 mW.
So long as the load current is below the 1.2 A limit, the
maximum continuous switch current becomes a function
two things: the package power dissipation and the RDS(on) at
the ambient temperature.
As an example let us calculate the worst case maximum
load current at TA = 70 °C. The worst case RDS(on) at 25 °C is
120 m at VIN = 1.5 V. The RDS(on) at 70 °C can be
extrapolated from this data using the following formula:
RDSon) (at 70 °C) = RDS(on) (at 25 °C) x (1 + TC x T)
Where TC is 2800 ppm/°C. Continuing with the calculation
we have
RDS(on) (at 70 °C) = 120 m x (1 + 0.0028 x (70 °C - 25 °C))
= 135 m
The maximum current limit is then determined by
P (max.)
I LOAD(max.) --------------------R DS(on)
which in this case is 1.99 A. Under the stated input voltage
condition, if the 1.99 A current limit is exceeded the internal
die temperature will rise and eventually, possibly damage
the device.
To avoid possible permanent damage to the device and
keep a reasonable design margin, it is recommended to
operate the device maximum up to 1.2 A only as listed in the
Absolute Maximum Ratings table.
Document Number: 67754
12
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP32460, SiP32461, SiP32462
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Vishay Siliconix
PRODUCT SUMMARY
Part number
Description
Configuration
SiP32460
SiP32461
SiP32462
1.2 V to 5.5 V, 50 m,
200 μs rise time,
bidirectional off isolation
1.2 V to 5.5 V, 50 m,
200 μs rise time,
bidirectional off isolation,
output discharge
1.2 V to 5.5 V,
50 m, 7.5 μs rise time,
bidirectional off isolation
Single
Single
Single
Slew rate time (μs)
170
170
7.5
On delay time (μs)
130
130
-
Input voltage min. (V)
1.2
1.2
1.2
Input voltage max. (V)
5.5
5.5
5.5
On-resistance at input voltage min. (m)
95
95
95
On-resistance at input voltage max. (m)
50
50
50
Quiescent current at input voltage min. (μA)
1.2
1.2
1.2
Quiescent current at input voltage max. (μA)
5.5
5.5
5.5
Output discharge (yes / no)
No
Yes
No
Reverse blocking (yes / no)
Yes
Yes
Yes
Continuous current (A)
Package type
Package size (W, L, H) (mm)
1.2
1.2
1.2
WCSP4
WCSP4
WCSP4
0.8 x 0.8 x 0.5
0.8 x 0.8 x 0.5
0.8 x 0.8 x 0.5
Status code
2
2
2
Product type
Slew rate
Slew rate
Slew rate
Applications
Computers, consumer,
industrial, healthcare,
networking, portable
Computers, consumer,
industrial, healthcare,
networking, portable
Computers, consumer,
industrial, healthcare,
networking, portable
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67754
S20-0532-Rev. E, 06-Jul-2020
Document Number: 67754
13
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
WCSP4: 4 Bumps
(2 x 2, 0.4 mm pitch, 208 μm bump height, 0.8 mm x 0.8 mm die size)
Mark on backside of die
1
A
2
1
2
W
A
A
B
B
B
e
D
4 x Ø 0.15 to Ø 0.20
Solder mask dia. - Pad diameter + 0.1
0.4
e
4xØb
D
Pin 1 mark
A
0.4
Note 3
A1
Recommended Land Pattern
All dimensions in millimeters
Bump Note 2
DWG-No: 6004
Notes
(1) Laser mark on the backside surface of die
(2) Bumps are SAC396
(3) 0.05 max. coplanarity
DIM.
A
MILLIMETERS a
NOM.
MAX.
MIN.
NOM.
MAX.
0.515
0.530
0.545
0.0203
0.0209
0.0215
0.250
0.260
0.270
0.0098
0.800
0.0283
A1
b
0.208
e
D
INCHES
MIN.
0.0082
0.400
0.720
0.760
0.0102
0.0106
0.0157
0.0299
0.0315
Note
a. Use millimeters as the primary measurement
T19-0364-Rev. D, 07-Oct-2019
1
Document Number: 63459
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000