SIP32475DN-T1-GE4

SiP32475 www.vishay.com Vishay Siliconix 47 m, 1.2 V to 5.5 V, Low Quiescent Current Load Switch in Ultra Thin μDFN-4 DESCRIPTION FEATURES The SiP32475 is a compact, ultra thin high side load switch that operates over a input voltage range from 1.2 V to 5.5 V. Designed with a p-channel MOSFET featuring an adaptive charge pump gate drive, the SiP32475 provides 47 m switch on-resistance over a wide input voltage range and maintains a low quiescent current level. • 1.2 V to 5.5 V input voltage range The SiP32475 also features slew rate control, reverse blocking when the switch is off, and output discharge. With guaranteed 1 V control logic high, the SiP32475 can interface directly with a low voltage control I/O, without the need for an extra level shift or driver. The device is logic high enabled and a 2.8 M pulldown resistor is integrated at the logic control EN pin. The slow slew rate of the SiP32475 limits the in-rush current and minimizes the switching noise. • Guaranteed 1 V logic high over the input voltage range • 47 m typical on-resistance • 3 μA quiescent current • 2 A maximum continuous switch current • Slew rate controlled turn on: 160 μs Available • Reverse current blocking when the switch is off or VIN is ground • Integrated output discharge switch • ESD performance per JESD 22: 4 kV HBM • Compact μDFN-4L package with 0.3 mm thickness • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 The SiP32475 is available in the μDFN-4L 1 mm x 1 mm package with a 0.3 mm thickness. The device is specified for operation over a temperature range of -40 °C to +85 °C. APPLICATIONS • PDAs / smart phones • Notebook / netbook computers • Tablet PCs • Portable media players • Digital cameras • GPS navigation devices • Data storage devices • Medical and healthcare devices TYPICAL APPLICATION CIRCUIT VIN IN OUT VOUT SiP32475 CIN COUT EN GND EN GND GND Fig. 1 - Typical Application Circuit ORDERING INFORMATION PART NUMBER SiP32475DN-T1-GE4 S20-0532-Rev. B, 06-Jul-2020 PACKAGE ton (μs) RDISCHARGE MARK CODE TEMPERATURE RANGE μDFN-4L 1 mm x 1 mm 300 Yes D -40 °C to +85 °C Document Number: 75792 1 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32475 www.vishay.com Vishay Siliconix ABSOLUTE MAXIMUM RATINGS PARAMETER Supply input voltage VIN Output voltage VOUT Output voltage VOUT Enable input voltage EN Maximum continuous switch current Maximum pulse switch current ESD rating (HBM) Thermal resistance, junction-to-ambient b Maximum power dissipation b Temperature Operating temperature Operating junction temperature Storage temperature CONDITIONS LIMIT Reference to GND Reference to GND Pulse at 1 ms reference to GND a Reference to GND -0.3 to 6.5 -0.3 to 6.5 -1.6 -0.3 to 6.5 2 2.5 4000 150 650 Pulse at 1 ms, 10 % duty cycle TA = 25 °C UNIT V A V °C/W mW -40 to +85 125 -65 to +150 °C Notes a. Negative current injection up to 300 mA b. Measured on 2 oz double side layer 1" x 1" board Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE ELECTRICAL PARAMETER Input voltage (VIN) Output voltage (VOUT) MINIMUM TYPICAL MAXIMUM UNIT 1.2 0 - 5.5 5.5 V SPECIFICATIONS PARAMETER SYMBOL Power Supply Quiescent current Shutdown current Off switch current IDS(off) Reverse blocking current I(in)RB IQ ISD TEST CONDITIONS UNLESS OTHERWISE SPECIFIED VIN = 1.2 V to 5.5 V, TA = -40 °C to +85 °C (typical values are at 25 °C) LIMITS UNIT MIN. TYP. MAX. VIN = 3.3 V, IOUT = 0 mA OUT = GND EN = GND, OUT = GND Out = 5 V, IN = 1.2 V, EN = 0 V, (measured at IN pin) Out = 5 V, IN = 0 V, EN = 0 V, (measured at IN pin) - 4.7 0.001 0.001 0.01 0.12 7 2 2 1 1 IOUT = 500 mA, VIN = 1.2 V, TA = 25 °C IOUT = 500 mA, VIN = 1.5 V, TA = 25 °C IOUT = 500 mA, VIN = 1.8 V, TA = 25 °C IOUT = 500 mA, VIN = 3 V, TA = 25 °C IOUT = 500 mA, VIN = 5 V, TA = 25 °C When VIN = 3 V at 25 °C When VIN = 1.8 V at 25 °C EN = 1.2 V 1 92 74 64 49 47 77 < 200 2.6 120 90 80 60 60 6 M - 2800 - ppm/°C V μA Switch Resistance On resistance RDS(on) Discharge switch on resistance RPD EN pin pull down resistor On resistance temperature coefficient On/off Logic EN input low voltage EN input high voltage Switching Speed Switch turn-on delay time REN Switch turn-on rise time Switch turn-off delay time S20-0532-Rev. B, 06-Jul-2020 TCRDS VIL VIH VIN = 1.5 V VIN = 5.5 V 0.4 - - 1 ton_DLY RLOAD = 500 , CL = 0.1 μF, VIN = 5 V - 138 - tr RLOAD = 500 , CL = 0.1 μF, VIN = 5 V - 162 - toff_DLY RLOAD = 500 , CL = 0.1 μF, (50 % VIN to 90 % VOUT) - 3 - m  μs Document Number: 75792 2 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32475 www.vishay.com Vishay Siliconix PIN CONFIGURATION 2 IN OUT 3 1 EN GND 4 DW Bottom view Pin 1 Indicator Pin 1 Indicator Fig. 2 - μDFN-4L 1 mm x 1 mm DEVICE MARKING Line 1 : plant code DW Line 2 : D = device part number W = assembly week Line 3 : pin 1 dot + fab code Fig. 3 - μDFN-4L 1 mm x 1 mm PIN DESCRIPTION PIN# NAME 3 FUNCTION OUT 2 IN 4 GND 1 EN Switch output Switch input Ground connection Switch on/off control. A pull down resistor is integrated TRUTH TABLE EN SWITCH 1 On 0 Off BLOCK DIAGRAM Reverse Blocking IN EN OUT Control Logic Charge Pump Turn On Slew Rate Control GND Fig. 4 - Functional Block Diagram S20-0532-Rev. B, 06-Jul-2020 Document Number: 75792 3 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32475 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) Axis Title Axis Title 10000 8 1000 5 4 3 100 2 1 10000 VIN = 5 V VIN = 3.3 V 7 VIN = 5.5 V 6 1000 5 1st line 2nd line 6 IQ - Quiescent Current (μA) 7 1st line 2nd line IQ - Quiescent Current (μA) 8 4 3 1 0 10 0 1 2 3 4 5 6 VIN = 1 V 0 7 10 -60 -40 -20 0 20 40 60 80 100 120 140 VIN - Input Voltage (V) 2nd line Temperature (ºC) Fig. 5 - Quiescent Current vs. Input Voltage Fig. 8 - Quiescent Current vs. Temperature Axis Title Axis Title -2000 1st line 2nd line 1000 VIN = 0 V -3000 100 -4000 800 700 1000 600 1st line 2nd line -1000 IQ(OFF) - Off Supply Current (nA) VIN = 1.2 V 0 10000 900 10000 I(IN)RB - Input Current (nA) ) 100 VIN = 1.2 V VIN = 2.5 V 2 500 400 300 100 200 100 OUT=OPEN VOUT = 5 V -5000 -40 0 10 -10 20 50 80 110 10 0 140 1 2 3 5 6 7 Temperature (ºC) VIN - Input Voltage (V)2nd line Fig. 6 - Reverse Blocking Current vs. Temperature Fig. 9 - Off Supply Current vs. Input Voltage Axis Title Axis Title VIN = +5 V 100 VIN = +2.5 V 1000 VIN = +3.3 V 1st line 2nd line 10 1 100 0.1 VIN = +1.2 V 0.01 VIN = +1.0 V 0.001 -40 -20 0 20 40 800 700 1000 600 500 400 300 100 200 100 10 60 IN Current OUT = GND 1st line 2nd line VIN = +5.5 V IDS(off) - Off Switch Current (nA) 1000 10000 900 10000 IQ(OFF) - Off Supply Current (nA) 4 80 100 120 140 0 10 0 1 2 3 4 5 6 7 8 Temperature (°C)ine VIN - Input Voltage (V) Fig. 7 - Off Supply Current vs. Temperature Fig. 10 - Off Switch Current vs. Input Voltage S20-0532-Rev. B, 06-Jul-2020 Document Number: 75792 4 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32475 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) Axis Title Axis Title 180 10000 200 1st line 2nd line 1000 -400 VIN = 0 V -600 100 -800 -1000 -1200 2 3 4 5 6 150 1000 140 130 120 100 110 100 90 80 10 1 160 1st line 2nd line -200 2nd line tON_DLY - Turn-On Delay Time (μs) I(IN)RB - Input Current (nA) 0 0 10000 VIN = 5 V, RL = 500 Ω, CL = 0.1 μF 170 VIN = +1.2 V 10 -40 -20 7 0 20 60 80 100 120 140 VOUT - Output Voltage (V)line Temperature (°C) 2nd line Fig. 11 - Reverse Blocking Current vs. Output Voltage Fig. 14 - Turn-on Delay Time vs. Temperature Axis Title Axis Title 1000 VIN = 5 V 100 1000 10 1st line 2nd line VIN = 3.3 V 1 0.1 100 VIN = 2.5 V 0.01 VEN-EN Threshold Voltage (V) VIN = 5.5 V VIN = 1 V 0.0001 -40 -20 0 20 40 60 0.9 0.8 0.7 VIL 0.6 100 0.4 10 10 0 80 100 120 140 1 2 3 4 5 6 7 Temperature (°C) VIN - Input Voltage (V) Fig. 12 - Off Switch Current vs. Temperature Fig. 15 - EN Threshold Voltage vs. Input Voltage Axis Title Axis Title 120 110 IOUT = 1 A 90 1000 1st line 2nd line 100 IOUT = 500 mA 80 70 100 60 50 IOUT =100 mA and 200 mA 40 1 2 3 10 4 5 VIN - Input Voltage (V) Fig. 13 - RDS(on) vs. Input Voltage S20-0532-Rev. B, 06-Jul-2020 6 2nd line RDS(ON) - On-Resistance (mΩ) IOUT = 1.5 A 180 170 160 150 140 130 120 110 100 90 80 70 60 50 40 30 10000 IOUT = 500 mA VIN = 1 V 1000 1st line 2nd line 10000 130 RDS(ON) - On-Resistance (mΩ) 1000 VIH 0.5 VIN = 1.2 V 0.001 10000 1.0 10000 1st line 2nd line 10 000 IDS(off) - Off Switch Current (nA) 40 VIN = 1.2 V VIN = 3.3 V 100 VIN = 2.5 V VIN = 5 V and 5.5 V 10 -40 -20 0 20 40 60 80 100 120 140 Temperature (°C) Fig. 16 - RDS(on) vs. Temperature Document Number: 75792 5 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32475 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) Axis Title Axis Title 190 1000 180 1st line 2nd line tr - Rise Time (μs) 200 4 170 160 100 150 140 130 120 0 20 40 60 3.5 80 100 120 140 10000 1000 3 2.5 2 100 1.5 1 10 -40 -20 VIN = 5 V, RL = 500 Ω, CL = 0.1 μF 1st line 2nd line VIN = 5 V, RL = 500 Ω, CL = 0.1 μF 210 10000 tOFF_DLY - Turn-Off Delay Time (μs) 220 10 -40 -20 0 20 40 60 80 100 120 140 Temperature (ºC)line Temperature (ºC) Fig. 17 - Rise Time vs. Temperature Fig. 18 - Turn-off Delay Time vs. Temperature 10000 VIN = VOUT = 3 V IOUT = 5 mA 1000 1st line 2nd line RPD - Output Pulldown Resistance (Ω) Axis Title 290 270 250 230 210 190 170 150 130 110 90 70 50 100 10 -40 -20 0 20 40 60 80 100 120 140 Temperature (ºC) Fig. 19 - Output Pulldown Resistance vs. Temperature S20-0532-Rev. B, 06-Jul-2020 Document Number: 75792 6 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32475 www.vishay.com Vishay Siliconix TYPICAL WAVEFORMS VIN(200mV/div) VIN(200mV/div) VIN=1.2V RL=500Ω CL=0.1μF VOUT(200mV/div) VOUT(200mV/div) VEN(500mV/div) VEN(500mV/div) VIN=1.2V RL=500Ω CL=0.1μF IOUT(10mA/div) IOUT(10mA/div) 200 μs/div 100 μs/div Fig. 20 - Enable Power Up Fig. 23 - Enable Power Down VIN(500mV/div) VIN(500mV/div) VIN=1.8V RL=500Ω CL=0.1μF VEN(500mV/div) VEN(500mV/div) VOUT(500mV/div) VOUT(500mV/div) VIN=1.8V RL=500Ω CL=0.1μF IOUT(10mA/div) IOUT(10mA/div) 100 μs/div 20 μs/div Fig. 21 - Enable Power Up Fig. 24 - Enable Power Down VIN(500mV/div) VIN(500mV/div) VOUT(500mV/div) VIN=3.3V RL=500Ω CL=0.1μF VEN(1V/div) IOUT(10mA/div) VOUT(500mV/div) VIN=3.3V RL=500Ω CL=0.1μF VEN(1V/div) IOUT(10mA/div) 100 μs/div 10 μs/div Fig. 22 - Enable Power Up Fig. 25 - Enable Power Down S20-0532-Rev. B, 06-Jul-2020 Document Number: 75792 7 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32475 www.vishay.com Vishay Siliconix TYPICAL WAVEFORMS VEN(1V/div) VEN(1V/div) VIN(1V/div) VIN(1V/div) VOUT(1V/div) IOUT(10mA/div) VIN=5.0V RL=500Ω CL=0.1μF VOUT(1V/div) IOUT(10mA/div) VIN=5.0V RL=500Ω CL=0.1μF 100 μs/div 10 μs/div Fig. 26 - Enable Power Up Fig. 29 - Enable Power Down VEN(1V/div) VEN(1V/div) VIN(1V/div) VIN(1V/div) VOUT(1V/div) VOUT(1V/div) IOUT(10mA/div) IOUT(10mA/div) VIN=5.5V RL=500Ω CL=0.1μF VIN=5.5V RL=500Ω CL=0.1μF 100 μs/div 10 μs/div Fig. 27 - Enable Power Up Fig. 30 - Enable Power Down IOUT(200mA/div) IOUT(200mA/div) VIN(200mV/div) VIN(200mV/div) VOUT(200mV/div) VEN(500mV/div) VOUT(200mV/div) VIN=1.2V IL=1.2A CL=0.1μF VEN(500mV/div) 500 μs/div 500 μs/div Fig. 28 - Enable Power Up Fig. 31 - Enable Power Down S20-0532-Rev. B, 06-Jul-2020 VIN=1.2V IL=1.2A CL=0.1μF Document Number: 75792 8 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32475 www.vishay.com Vishay Siliconix TYPICAL WAVEFORMS VIN(500mV/div) VIN(500mV/div) IOUT(200mA/div) VOUT(500mV/div) VEN(500mV/div) VOUT(500mV/div) VIN=1.8V IL=1.2A CL=0.1μF VEN(500mV/div) VIN=1.8V IL=1.2A CL=0.1μF IOUT(200mA/div) 500 μs/div 5 μs/div Fig. 32 - Enable Power Up Fig. 35 - Enable Power Down VIN(1V/div) VIN(1V/div) VEN(1V/div) VIN=3.3V IL=1.2A CL=0.1μF VOUT(1V/div) IOUT(500mA/div) VEN(1V/div) VIN=3.3V IL=1.2A CL=0.1μF VOUT(1V/div) IOUT(500mA/div) 200 μs/div 2 μs/div Fig. 33 - Enable Power Up Fig. 36 - Enable Power Down VOUT(1V/div) VOUT(1V/div) VIN(1V/div) VIN(1V/div) VEN(1V/div) VEN(1V/div) IOUT(500mA/div) VIN=5V IL=1.2A CL=0.1μF 200 μs/div Fig. 34 - Enable Power Up S20-0532-Rev. B, 06-Jul-2020 VIN=5V IL=1.2A CL=0.1μF IOUT(500mA/div) 2 μs/div Fig. 37 - Enable Power Down Document Number: 75792 9 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32475 www.vishay.com DETAILED DESCRIPTION SiP32475 is high side, slew rate controlled, load switch. It incorporates a negative charge pump at the gate to keep the gate to source voltage high when turned on. This keeps the on resistance low at lower input voltages. SiP32475 is designed with slow slew rate to minimize inrush current during turn on. SiP32475 has a reverse blocking circuit, when disabled, to prevent the current from going back to the input when the output voltage is higher than the input voltage. SiP32475 has an output pull down resistor to discharge the output capacitance when the device is off. APPLICATION INFORMATION Input Capacitor While a bypass capacitor on the input is not required, a 4.7 μF or larger capacitor for CIN is recommended in almost all applications. The bypass capacitor should be placed as physically close as possible to the input pin to be effective in minimizing transients on the input. Ceramic capacitors are recommended over tantalum because of their ability to withstand input current surges from low impedance sources such as batteries in portable devices. Output Capacitor A 0.1 μF capacitor across VOUT and GND is recommended to insure proper slew operation. There is inrush current through the output MOSFET and the magnitude of the inrush current depends on the output capacitor, the bigger the COUT the higher the inrush current. There is no ESR or capacitor type requirement. Enable The EN pin is compatible with CMOS logic voltage levels. It requires at least 0.4 V or below to fully shut down the device and 1 V or above to fully turn on the device. There is a 2.6 M resistor connected between EN pin and GND pin. Protection Against Reverse Voltage Condition This device contains a reverse blocking circuit. When disabled (VEN less than 0.4 V) this circuit keeps the output current from flowing back to the input when the output voltage is higher than the input voltage. Thermal Considerations Due to physical limitations of the layout and assembly of the device the maximum switch current is 2 A as stated in the S20-0532-Rev. B, 06-Jul-2020 Vishay Siliconix Absolute Maximum Ratings table. However, another limiting characteristic for the safe operating load current is the thermal power dissipation of the package. The maximum power dissipation in any application is dependent on the maximum junction temperature, TJ(max.) = 125 °C, the junction-to-ambient thermal resistance, J-A = 150 °C/W, and the ambient temperature, TA, which may be expressed as: 125 - T A T J(max.) - T A P (max.) = -------------------------------- = ---------------------- JA 150 It then follows that, assuming an ambient temperature of 70 °C, the maximum power dissipation will be limited to about 666 mW. So long as the load current is below the 2 A limit, the maximum continuous switch current becomes a function two things: the package power dissipation and the RDS(on) at the ambient temperature. As an example let us calculate the worst case maximum load current at TA = 70 °C. The worst case RDS(on) at 25 °C is 120 m at VIN = 1.5 V. The RDS(on) at 70 °C can be extrapolated from this data using the following formula: RDS(on) (at 70 °C) = RDS(on) (at 25 °C) x (1 + TC x T) Where TC is 2800 ppm/°C. Continuing with the calculation we have RDS(on) (at 70 °C) = 120 m x (1 + 0.0028 x (70 °C - 25 °C)) = 135 m The maximum current limit is then determined by P (max.) I LOAD(max.)  --------------------R DS(on) which in this case is 2.2 A. Under the stated input voltage condition, if the 2.2 A current limit is exceeded the internal die temperature will rise and eventually, possibly damage the device. To avoid possible permanent damage to the device and keep a reasonable design margin, it is recommended to operate the device maximum up to 2 A only as listed in the Absolute Maximum Ratings table. Document Number: 75792 10 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32475 www.vishay.com Vishay Siliconix PRODUCT SUMMARY Part number SiP32475 Description 1.2 V to 5.5 V, 47 m, 200 μs rise time, bidirectional off isolation, output discharge Configuration Single Slew rate time (μs) 162 On delay time (μs) 138 Input voltage min. (V) 1.2 Input voltage max. (V) 5.5 On-resistance at input voltage min. (m) 92 On-resistance at input voltage max. (m) 47 Quiescent current at input voltage min. (μA) 1.2 Quiescent current at input voltage max. (μA) 5.5 Output discharge (yes / no) Yes Reverse blocking (yes / no) Yes Continuous current (A) Package type Package size (W, L, H) (mm) 2 μDFN-4L 1.0 x 1.0 x 0.35 Status code 2 Product type Slew rate Applications Computers, consumer, industrial, healthcare, networking, portable Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75792 S20-0532-Rev. B, 06-Jul-2020 Document Number: 75792 11 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix D 0.05 C A 0.05 C μDFN-4L 1 mm x 1 mm Case Outline e B A 3 E 4 K C 0.10 2x 0.1 C L Pin 1 index area 2x 2 0.1 C 0.10 M C A B 0.05 M C Top view DIM. 1 b A1 K1 C Bottom view Side view MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.25 0.30 0.35 0.010 0.012 0.014 A1 0.00 - 0.05 0.000 - 0.002 b 0.20 0.25 0.30 0.008 0.010 0.012 D 0.95 1.00 1.05 0.037 0.039 0.041 E 0.95 1.00 1.05 0.037 0.039 0.041 e 0.50 BSC 0.020 BSC K 0.20 Ref. 0.008 Ref. K1 0.125 Ref. 0.005 Ref. L 0.35 0.40 0.45 0.014 0.016 0.018 ECN: S17-1722-Rev. A, 27-Nov-17 DWG: 6059 Notes (1) Use millimeters as the primary measurement (2) Dimensioning and tolerances conform to ASME Y14.5M-1994 (3) N is the number of terminals Nd and Ne is the number of terminals in each D and E site respectively (4) Dimensions b applies to plated terminal and is measured between 0.20 mm and 0.30 mm from terminal tip (5) The pin 1 identifier must be existed on the top surface of the package by using indentation mark or other feature of package body (6) Package warpage max. 0.05 mm Revision: 27-Nov-17 Document Number: 75789 1 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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