SiP32501
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Vishay Siliconix
0.9 V to 2.5 V, 66 m Load Switch in TDFN4
DESCRIPTION
FEATURES
The SiP32501 is a compact, low RON turn on slew rate
controlled load switch. The device has 66 m resistance
and operates over the input voltage range of 0.9 V to 2.5 V
without requirement of extra bias power rail.
• Low input voltage, 0.9 V to 2.5 V
• Low RON, 66 m typical
• Fast turn on time
• Low quiescent current
The SiP32501 has low input logic control threshold that can
interface with low voltage control GPIO directly without
extra level shift or driver. The switch supports designs when
control logic voltage is higher than input power voltage.
There is a pull down at this EN logic control pin.
• Low logic control with hysteresis
Available
• Reverse current blocking when disabled
• Integrated pull down at EN pin
• Output discharge
The SiP32501 has 20 μs typically for input voltage of 1.2 V.
Its turn off delay time is less than 1 μs. An output discharge
switch is integrated.
• TDFN4 1.2 mm x 1.6 mm
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
SiP32501 is available in small TDFN4 package of 1.2 mm x
1.6 mm x 0.55 mm. The device is designed for the operation
temperature range of -40 °C to +85 °C.
APPLICATIONS
• Battery operated devices
• Smartphones and tablet
• Ultrabook and notebook
• Portable industrial equipment
• Medical and healthcare equipment
• Digital cameras
• Game console
TYPICAL APPLICATION CIRCUIT
VIN
IN
OUT
VOUT
SiP32501
CIN
COUT
EN
GND
EN
GND
GND
Fig. 1 - SiP32501 Typical Application Circuit
ORDERING INFORMATION
TEMPERATURE RANGE
-40 °C to +85 °C
PACKAGE
MARKING
PART NUMBER
TDFN4 1.2 mm x 1.6 mm
Ux
SiP32501DNP-T1-GE4
Note
• -GE4 denotes halogen-free and RoHS-compliant
S20-0532-Rev. C, 06-Jul-2020
Document Number: 75595
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SiP32501
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
LIMIT
Supply input voltage (VIN)
UNIT
-0.3 to 2.75
Enable input voltage (VEN)
-0.3 to 2.75
Output voltage (VOUT)
-0.3 to 2.75
Maximum continuous switch current (Imax.)
V
1.2
Maximum pulsed current (IDM) VIN (pulsed at 1 ms, 10 % duty cycle)
A
2
ESD rating (HBM)
4000
V
Junction temperature (TJ)
-40 to +150
°C
Thermal resistance (JA) a
170
°C/W
Power dissipation (PD) a
735
mW
Notes
a. Device mounted with all leads and power pad soldered or welded to PC board
b. Derate 5.9 mW/°C above TA = 25 °C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating/conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
PARAMETER
LIMIT
Input voltage range (VIN)
Operating junction temperature range
UNIT
0.9 to 2.5
V
-40 to +125
°C
SPECIFICATIONS
PARAMETER
Operating voltage c
Quiescent current
SYMBOL
TEST CONDITIONS UNLESS SPECIFIED
VIN = 1 V, TA = -40 °C to +85 °C
(Typical values are at TA = 25 °C)
VIN
IQ
LIMITS
MIN. a
TYP. b
MAX. a
0.9
-
2.5
VIN = 1.2 V, VEN = VIN, OUT = open
-
10
15
VIN = 2.5 V, VEN = VIN, OUT = open
-
34
60
Off supply current
IQ(off)
EN = GND, OUT = open
-
-
30
Off switch current
IDS(off)
EN = GND, OUT = 0 V
-
-
30
IRB
VOUT = 2.5 V, VIN = 0.9 V, VEN = 0 V
-
0.001
10
VIN = 1 V, IL = 200 mA, TA = 25 °C
-
69
82
Reverse blocking current
On resistance
RDS(on)
On resistance temp. coefficient
TCRDS
-
68
82
-
66
80
VIN = 2.5 V, IL = 200 mA, TA = 25 °C
-
66
80
-
4100
-
ppm/°C
RPD
VEN = 0 V, TA = 25 °C
-
425
550
VIL
VIN = 1 V
-
-
0.1
EN input high voltage c
VIH
VIN = 2.5 V
1.5
-
-
EN input leakage
IEN
VIN = 2.5 V, VEN = 0 V
-
-
1
VIN = 2.5 V, VEN = 2.5 V
-
10
15
1
Output turn-on rise time
Output turn-off delay time
tr
td(off)
μA
VIN = 1.2 V, IL = 200 mA, TA = 25 °C
Output pulldown resistance
td(on)
V
VIN = 1.8 V, IL = 200 mA, TA = 25 °C
EN input low voltage c
Output turn-on delay time
UNIT
VIN = 1.2 V
-
0.4
VIN = 2.5 V
-
0.05
1
10
20
30
5
9.8
20
VIN = 1.2 V
-
0.25
1
VIN = 2.5 V
-
0.15
1
VIN = 1.2 V
VIN = 2.5 V
RLOAD = 10 ,
CL = 0.1 μF,
TA = 25 °C
m
V
μA
μs
Notes
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. For VIN outside this range consult typical EN threshold curve.
S20-0532-Rev. C, 06-Jul-2020
Document Number: 75595
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SiP32501
www.vishay.com
Vishay Siliconix
PIN CONFIGURATION
Bottom View
IN
4
1
OUT
2
GND
GND
EN
3
Fig. 2 - TDFN4 1.2 mm x 1.6 mm
PIN DESCRIPTION
PIN NUMBER
NAME
FUNCTION
1
OUT
This pin is the n-channel MOSFET source connection. Bypass to ground through a 0.1 μF capacitor
2
GND
3
EN
Enable input
4
IN
This pin is the n-channel MOSFET drain connection. Bypass to ground through a 4.7 μF capacitor
Ground connection
BLOCK DIAGRAM
IN
EN
OUT
Control
Logic
Charge
Pump
GND
Fig. 3 - Functional Block Diagram
S20-0532-Rev. C, 06-Jul-2020
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SiP32501
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Vishay Siliconix
45
50
40
45
35
40
VIN = 2.5 V
IQ - Quiescent Current (μA)
I Q - Quiescent Current (μA)
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
30
25
20
15
10
35
30
25
20
15
VIN = 1.2 V
10
5
5
0
0
0.8
1.0
1.2
1.4
1.6
1.8 2.0
V IN (V)
2.2
2.4
2.6
2.8
VIN = 1 V
- 40
- 20
0
20
40
60
Temperature (°C)
80
100
Fig. 7 - Quiescent Current vs. Temperature
Fig. 4 - Quiescent Current vs. Input Voltage
1200
100 000
VIN = 2.5 V
10 000
IIQ(OFF) - Off Supply Current (nA)
IQ(OFF) - Off Supply Current (nA)
1100
1000
900
800
700
600
VIN = 1.2 V
1000
100
VIN = 1 V
10
500
400
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
-20
0
20
40
60
80
100
VIN (V)
Temperature (°C)
Fig. 5 - Off Supply Current vs. Input Voltage
Fig. 8 - Off Supply Current vs. Temperature
1000
100 000
900
VIN = 2.5 V
10 000
IDS(off) - Off Switch Current (nA)
IDS(off) - Off Switch Current (nA)
1
-40
2.8
800
700
600
500
400
VIN = 1.2 V
1000
100
VIN = 1 V
10
1
300
200
0.8
1.2
1.6
2
2.4
2.8
0
- 40
- 20
0
20
40
60
80
VIN (V)
Temperature (°C)
Fig. 6 - Off Switch Current vs. Input Voltage
Fig. 9 - Off Switch Current vs. Temperature
S20-0532-Rev. C, 06-Jul-2020
100
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SiP32501
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TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
74
90
73
85
80
IO = 1.2 A
71
RDS - On-Resistance (mΩ)
RDS - On-Resistance (mΩ)
72
IO = 0.2 A
VIN = 1.2 V
70
IO = 0.5 A
69
68
67
66
75
70
65
60
55
50
65
IO = 0.2 A
64
45
63
40
0.8
1.0
1.2
1.4
1.6
1.8 2.0
VIN (V)
2.2
2.4
2.6
2.8
-40
-20
20
40
60
80
100
Temperature (°C)
Fig. 10 - RDS(on) vs. VIN
Fig. 13 - RDS(on) vs. Temperature
2.0
12
VIN = 2.5 V
VIN = 0.9 V
1.8
10
1.6
1.4
8
I IN (nA)
IEN - EN Current (μA)
0
6
1.2
1.0
0.8
4
0.6
0.4
2
0.2
0
0
0
0.5
1
1.5
2
0.8
2.5
1
1.2
1.4
1.6
VEN (V)
1.8 2
VOUT (V)
2.2
2.4
2.6
2.8
Fig. 14 - Reverse Blocking Current vs. Output Voltage
Fig. 11 - IEN vs. VEN
1.6
100
VOUT = 2.5 V
1.4
VIN = 0.9 V
EN Threshold Voltage (V)
80
I IN (nA)
60
40
1.2
1.0
VIH
0.8
VIL
0.6
0.4
20
0.2
0.0
0
-40
-20
0
20
40
60
Temperature (°C)
80
100
Fig. 12 - Reverse Blocking Current vs. Temperature
S20-0532-Rev. C, 06-Jul-2020
0.8 1.0
1.2
1.4
1.6
1.8 2.0
VIN (V)
2.2
2.4
2.6
2.8
Fig. 15 - EN Threshold Voltage vs. Input Voltage
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SiP32501
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Vishay Siliconix
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
460
440
VOUT = VIN = 2.5 V
RPD - Output Pulldown Resistance (Ω)
RPD - Output Pulldown Resistance (Ω)
VOUT = VIN
435
430
425
420
415
450
440
430
420
410
400
410
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
-40
2.8
-20
VIN (V)
20
40
60
80
100
Temperature (°C)
Fig. 16 - Output Pulldown Resistance vs. Input Voltage
Fig. 19 - Output Pulldown Resistance vs. Temperature
14
0.100
VIN = 2.5 V
CL = 0.1 μF
RL = 10 Ω
0.090
13
tr - Rise Switching Time (μs)
0.095
td(on) - Turn-On Delay Time (μs)
0
0.085
0.080
0.075
0.070
0.065
0.060
12
VIN = 2.5 V
CL = 0.1 μF
RL = 10 Ω
11
10
9
8
7
6
0.055
0.050
-40
-20
0
20
40
60
Temperature (°C)
80
100
Fig. 17 - Turn-On Delay Time vs. Temperature
5
-40
-20
0
20
40
Temperature (°C)
60
80
100
Fig. 20 - Rise Time vs. Temperature
td(off) - Turn Off Delay Time (μs)
0.30
VIN = 2.5 V
CL = 0.1 μF
RL = 10 Ω
0.25
0.20
0.15
0.10
0.05
0.00
-40
-20
0
20
40
Temperature (°C)
60
80
100
Fig. 18 - Turn-Off Delay Time vs. Temperature
S20-0532-Rev. C, 06-Jul-2020
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SiP32501
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TYPICAL WAVEFORMS
RL = 10 Ω
CL = 0.1 μF
RL = 10 Ω
CL = 0.1 μF
C1
C1
VEN = (1 V/div.)
VEN = (2 V/div.)
C1
C1
VOUT (1 V/div.)
VOUT (0.5 V/div.)
Time (2 μs/div.)
Time (10 μs/div.)
Fig. 24 - Turn-Off Time (VIN = 2.5 V)
Fig. 21 - Turn-On Time (VIN = 1.2 V)
RL = 10 Ω
CL = 0.1 μF
C1
VEN = (1 V/div.)
C1
VOUT (0.5 V/div.)
Time (2 μs/div.)
Fig. 22 - Turn-Off Time (VIN = 1.2 V)
RL = 10 Ω
CL = 0.1 μF
C1
VEN = (2 V/div.)
C1
VOUT (1 V/div.)
Time (5 μs/div.)
Fig. 23 - Turn-On Time (VIN = 2.5 V)
S20-0532-Rev. C, 06-Jul-2020
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SiP32501
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DETAILED DESCRIPTION
Thermal Considerations
The SiP32501 is a compact, low RON turn on slew rate
controlled load switch. The device has 66 m resistance
and operates over the input voltage range of 0.9 V to 2.5 V
without requirement of extra bias power rail.
This device is designed to maintain a constant output load
current. Due to physical limitations of the layout and
assembly of the device the maximum switch current is 1.2 A
as stated in the Absolute Maximum Ratings table. However,
another limiting characteristic for the safe operating load
current is the thermal power dissipation of the package and
the PCB layout. To obtain the highest power dissipation
(and a thermal resistance of 170 °C/W) the device should be
connected to a heat sink on the printed circuit board.
The SiP32501 consisted of an n-channel power MOSFET
designed as high side load switch. Once enabled the device
charge pumps the gate of the power MOSFET to a constant
gate to source voltage for fast turn on time. The mostly
constant gate to source voltage keeps the on resistance low
through the input voltage range.
The SiP32501 features an output discharge circuit to help
discharge the output capacitor. Because the body of the
output n-channel is always connected to GND, it prevents
the current from going back to the input in case the output
voltage is higher than the input.
The SiP32501 has low input logic control threshold that can
interface with low voltage control GPIO directly without
extra level shift or driver. The switch supports designs when
control logic voltage is higher than input power voltage.
There is a pull down at this EN logic control pin.
The maximum power dissipation in any application is
dependent on the maximum junction temperature,
TJ (max.) = 125 °C, the junction-to-ambient thermal
resistance, J-A = 170 °C/W, and the ambient temperature,
TA, which may be formulaically expressed as:
125 - T A
T J (max.) - T A
P (max.) = ------------------------------------- = ---------------------- JA
170
It then follows that, assuming an ambient temperature of
70 °C, the maximum power dissipation will be limited to
about 323 mW.
The SiP32501 has 20 μs typically for input voltage of 1.2 V.
Its turn off delay time is less than 1 μs. An output discharge
switch is integrated.
So long as the load current is below the 1.2 A limit, the
maximum continuous switch current becomes a function
two things: the package power dissipation and the RDS(on) at
the ambient temperature.
APPLICATION INFORMATION
As an example let us calculate the worst case maximum
load current at TA = 70 °C. The worst case RDS(on) at 25 °C is
82 m. The RDS(on) at 70 °C can be extrapolated from this
data using the following formula:
Input Capacitor
While a bypass capacitor on the input is not required, to
minimize the voltage drop on the input supply caused by
load transient, a CIN is recommended to be placed close to
IN pin. A ceramic capacitor is recommended because of
their ability to withstand current surges.
Output Capacitor
A 0.1 μF capacitor across VOUT and GND is recommended
to insure proper slew operation. There is inrush current
through the output MOSFET and the magnitude of the
inrush current depends on the output capacitor, the bigger
the COUT the higher the inrush current. There are no ESR or
capacitor type requirement.
Enable
The EN pin is compatible with CMOS logic voltage levels. It
requires at least 0.1 V or below to fully shut down the device
and 1.5 V or above to fully turn on the device.
The EN pin can withstand voltage higher than VIN.
Protection Against Reverse Voltage Condition
SiP32501 can block the output current from going to the
input in case where the output voltage is higher than the
input voltage when the main switch is off.
S20-0532-Rev. C, 06-Jul-2020
RDS(on) (at 70 °C) = RDS(on) (at 25 °C) x (1 + TC x T)
Where TC is 4100 ppm/°C. Continuing with the calculation
we have
RDS(on) (at 70 °C) = 82 m x (1 + 0.0041 x (70 °C - 25 °C))
= 97.1 m
The maximum current limit is then determined by
P (max.)
I LOAD (max.) --------------------R DS(on)
which in this case is 1.82 A. Under the stated input voltage
condition, if the 1.82 A current limit is exceeded the internal
die temperature will rise and eventually, possibly damage
the device.
To avoid possible permanent damage to the device and
keep a reasonable design margin, it is recommended to
operate the device maximum up to 1.2 A only as listed in the
Absolute Maximum Ratings table.
Document Number: 75595
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SiP32501
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PRODUCT SUMMARY
Part number
SiP32501
Description
0.9 V to 2.5 V, 66 m, 9.8 μs rise time, load switch
Configuration
Single
Slew rate time (μs)
9.8
On delay time (μs)
0.05
Input voltage min. (V)
0.9
Input voltage max. (V)
2.5
On-resistance at input voltage min. (m)
69
On-resistance at input voltage max. (m)
66
Quiescent current at input voltage min. (μA)
5
Quiescent current at input voltage max. (μA)
40
Output discharge (yes / no)
No
Reverse blocking (yes / no)
Yes
Continuous current (A)
1.2
Package type
Package size (W, L, H) (mm)
TDFN4
1.2 x 1.6 x 0.5
Status code
2
Product type
Slew rate
Applications
Computers, consumer, industrial, healthcare, networking, portable
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75595.
S20-0532-Rev. C, 06-Jul-2020
Document Number: 75595
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Package Information
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TDFN4 1.2 x 1.6 Case Outline
D
D2
4
b
3
Pin #1 ID
(Optional)
4
K
E
E2
3
1
2
e
Index Area
(D/2 x E/2)
Bottom View
A
A1
Top View
A3
1
L
2
Side View
DIM.
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.45
0.55
0.60
0.017
0.022
0.024
A1
0.00
-
0.05
0.00
-
A3
0.15 REF. or 0.127 REF.
(1)
0.006 or 0.005
0.002
(1)
b
0.20
0.25
0.30
0.008
0.010
0.012
D
1.15
1.20
1.25
0.045
0.047
0.049
D2
0.81
0.86
0.91
0.032
0.034
0.036
e
0.50 BSC
0.020
E
1.55
1.60
1.65
0.061
0.063
0.065
E2
0.45
0.50
0.55
0.018
0.020
0.022
K
L
0.25 typ.
0.25
0.30
0.010 typ.
0.35
0.010
0.012
0.014
ECN: T16-0143-Rev. C, 18-Apr-16
DWG: 5995
Note
(1) The dimension depends on the leadframe that assembly house used.
Revision: 18-Apr-16
Document Number: 65734
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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Revision: 09-Jul-2021
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Document Number: 91000