SIP41111DY-T1-E3

SiP41111 Vishay Siliconix 75 V/2 A Peak, Low Cost, High Frequency Half Bridge Driver DESCRIPTION FEATURES • Drives N-Channel MOSFET Half Bridge SiP41111 is the MOSFET driver, which is designed to simplify the converter design for the topologies, which requires the high-side switch such as half bridge, two switch forward and active clamping forward. The high-side and low-side drivers can be configured to meet different driving requirement for these topologies because the high-side and low side drivers are independent controlled. The built-in bootstrap diode eliminates the external diode to improve the flexibility PCB layout. The VDD undervoltage lockout prevents the abnormal operation. Topology • SOIC, SOIC (PowerPAK®) Package Options • Lead (Pb)-free Product Available (RoHS Compliant) • Bootstrap Supply Maximum Voltage to 75 VDC • Built-In Bootstrap Diode RoHS COMPLIANT • Fast Propagation Times Meet High Frequency Converter Circuits • Drives 1000 pF Load with Rise and Fall Times Typical 15 ns to meet 400 kHz typical Switching Requirement • Independent Driver Channel for Two Switch Forward and Active Clamp Forward Topologies • Low Power Consumption • Supply Under Voltage Lockout • 2.0 A Peak Sink and Source Gate Driver Current APPLICATIONS • • • • Half Bridge Converter Two-Switch Forward Converters Active Clamp Forward Converters Bus Converters • Motor Control TYPICAL APPLICATION CIRCUIT + 48 V + 12 V V DD HB HO HI V OUT HS + PWM Controller SiP41111 LI + LO GND VSS Document Number: 74292 S-61214–Rev. A, 17-Jul-06 www.vishay.com 1 SiP41111 Vishay Siliconix BLOCK DIAGRAMS HB V DD LEVEL SHIFT HO HI HS UNDER VOLTAGE LI LO V SS ABSOLUTE MAXIMUM RATINGS Parameter Supply Voltage, VDD, VHB-VHS Limit a Unit - 0.3 to 14 LI and HI Voltagea - 0.3 to VDD + 0.3 Voltage on LOa - 0.3 to VDD + 0.3 Voltage on HOa VHS - 0.3 to VHB + 0.3 Voltage on HSa Continuous - 1 to + 89 Voltage on HBa VDD = 12 V + 89 Average Current in VDD to HB diode ESD Classification Class 1 V 100 mA 1 kV THERMAL INFORMATION Parameter Limit b Thermal Resistance (Typical) θJA Max Power Dissipation Unit SOIC SOIC (PowerPak)b 153 at 70 °C in Free Air (SOIC)c 522 mW at 70 °C in Free Air (SOIC PowerPAK)d 2.0 W °C/W 40 Junction Temperature Range - 65 to 150 Storage Temperature Range - 55 to 150 °C Notes: a. All voltages are referenced to ground unless otherwise specified. b. Device mounted with all leads soldered or welded to PC board. c. Derate 6.5 mW/°C above + 70 °C. d. Derate 25 mW/°C above + 70 °C. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE Parameter Supply Voltage Limit VDD Unit + 9 to 13.2 Voltage on HS - 1 to 75 Voltage on HB VHS + 8 to VHS + 13.2 and VDD - 1 to VDD + 75 www.vishay.com 2 V Document Number: 74292 S-61214–Rev. A, 17-Jul-06 SiP41111 Vishay Siliconix ELECTRICAL SPECIFICATIONS VDD = VHB = 12 V, VSS = VHS = 0 V, no load on LO or HO, unless otherwise specified TJ = 40 °C to 125 °C TJ = 25 °C Parameter Symbol Test Conditions Min Typ Max Min Max VDD Quiescent Current IDD LI = HI = 0 V - 0.18 0.24 - 0.27 VDD Operating Current IDDO f = 500 kHz - 1.7 2.5 - 3 Total HB Quiescent Current IHB LI = HI = 0 V - 0.02 0.10 - 0.15 Unit Supply Currents mA Total HB Operating Current IHBO f = 500 kHz - 1.5 2.5 - 3 HB to VSS Quiescent Current IHBS VHS = VHB = 89 V - 7 12 - 15 µA HB to VSS Operating Current IHBSO f = 500 kHz - 0.6 - - - mA Input Pins Low Level Input Voltage Thresold VIL 4 4.5 - 3 - High Level Input Voltage Threshold VIH - 5.5 7 - 8 Input Voltage Hysteresis VIHYS - 1.0 - - - RI - 300 - 100 600 VDD Rising Threshold VDDR 6.6 7.1 7.6 6.4 7.8 VDD Threshold Hysteresis VDDH - 1.3 - - - Input Pulldown Resistance V kΩ Supply Undervoltage Protection V Bootstrap Diode Low-Current Forward Drop Out Voltage High-Current Forward Drop Out Voltage VDL IVDD-HB = 100 µA - 1.25 1.4 - 1.8 VDH IVDD-HB = 100 mA - 1.8 2.0 - 2.2 Dynamic Resistance RD IVDD-HB = 100 mA - 1.5 - - - VOLL ILO = 100 mA - 0.25 0.3 - 0.4 High Level Output Voltage VOHL ILO - 100 mA, VOHL = VDD - VLO - 0.25 0.3 - 0.4 Peak Sourcing Current IOHL VLO = 0 V - 2 - - - Peak Sinking Current IOLL VLO = 12 V - 2 - - - Low Level Output Voltage VOLH IHO = 100 mA - 0.25 0.3 - 0.4 V High Level Output Voltage VOHH IHO = - 100 mA VOHH = VHB - VHO - 0.25 0.3 - 0.4 V Peak Sourcing Current IOHH VHO = 0 V - 2 - - - A Peak Sinking Current IOLH VHO = 12 V - 2 - - - A V Ω LO Gate Driver Low Level Output Voltage V A HO Gate Driver Document Number: 74292 S-61214–Rev. A, 17-Jul-06 www.vishay.com 3 SiP41111 Vishay Siliconix ELECTRICAL SPECIFICATIONS VDD = VHB = 12 V, VSS = VHS = 0 V, no load on LO or HO, unless otherwise specified TJ = 25 °C Parameter Lower Turn-Off Propagation Delay (LI Falling to LO Falling) Upper Turn-Off Propagation Delay (HI Falling to HO Falling) Lower Turn-On Propagation Delay (LI Rising to LO Rising) Upper Turn-On Propagation Delay (HI Rising to HO Rising) Delay Matching: Lower Turn-On and Upper Turn-Off Delay Matching: Lower Turn-Off and Upper Turn-On Symbol Test Conditions Min Typ Max tLPHL - 18 - tHPHL - 18 - tLPLH - 23 - tHPLH - 23 - tMON - 5.5 - tMOFF - 6.5 - Low-side Output Rise Time tRCL - 14 - High-side Output Rise Time tRCH - 13 - Low-side Output Fall Time tFCL - 15 - High-side Output Fall Time tFCH - 15 - Either Output Rise Time Driving DMOS tRD - 27 - Either Output Fall Time Driving DMOS Minimum Input Pulse Width that Changes the Output Bootstrap Diode Turn-On or Turn-Off Time tFD - 30 - tPW - - 65 tBS - 10 - Unit ns CL = 1000 pF CL = Si7456DP Ciss = 3100 pF CL = Si7456DP Ciss = 3100 pF TIMING DIAGRAMS LI HI, LI t HPLH , t LPLH HO, LO HI t HPHL, t LPHL LO t MON t MOFF HO www.vishay.com 4 Document Number: 74292 S-61214–Rev. A, 17-Jul-06 SiP41111 Vishay Siliconix PIN CONFIGURATION TOP VIEW TOP VIEW VDD LO VDD HB VSS HB LO VSS PowerPak HO LI HO LI HS HI HS HI SOIC-8 SOIC-8 (PowerPak) PIN DESCRIPTIONS Symbol Descriptions VDD Input power supply to IC and lower gate drivers HB Floating boostrap supply for the upper MOSFET. External bootstrap capacitor is required HO Output drive for upper MOSFET. Connect to gate of upper power MOSFET HS Floating GND for the upper MOSFET. Connect to source of upper power MOSFET HI Input for upper drive LI Input for lower drive VSS Ground supply LO Output drive for lower MOSFET. Connect to gate of lower power MOSFET PowerPAK Exposed PowerPAK is for heat dissipation. Exposed PowerPAK is floating or grounded. The PowerPad is not guaranteed electrically isolated from all other pins ORDERING INFORMATION Part Number SiP41111DY-T1-E3 SiP41111DYP-T1-E3 Marking 41111 41111 Temperature Range - 40 to 85 °C - 40 to 85 °C Package SOIC-8 SOIC-8 PowerPAK TYPICAL APPLICATION CIRCUITS + 48 V + 12 V VDD HB HO HI V OUT HS + PWM Controller SiP41111 + LO LI GND V SS Two Switch Forward Application Circuit Document Number: 74292 S-61214–Rev. A, 17-Jul-06 www.vishay.com 5 SiP41111 Vishay Siliconix + 24 V + 12 V V OUT + VDD HB HO HI HS + PWM Controller SiP41111 LI GND LO V SS Active Clamp Forward Application Circuit TYPICAL CHARACTERISTICS 10 10 1 I HB (mA) I DDO (mA) 1 T = - 40 °C T = 25 °C T = 150 °C T = 125 °C 0.1 T = - 40 °C T = 25 °C T = 150 °C T = 125 °C 0.1 10 100 1000 0.01 10 100 Frequency (kHz) Frequency (kHz) 1000 HB Operating Current vs. Frequency Operating Current vs. Frequency 400 10 VDD = VHB = 9 V 300 VOHL, VOHH (mV) I HBSO (mA) 1 T = - 40 °C T = 25 °C T = 150 °C T = 125 °C 0.1 VDD = VHB = 12 V 200 VDD = VHB = 13.2 V 100 0.01 10 100 Frequency (kHz) HB to Vss Operating Current vs. Frequency www.vishay.com 6 1000 0 - 45 - 10 25 60 95 130 Temperature (°C) High Level Output Voltage vs. Temperature Document Number: 74292 S-61214–Rev. A, 17-Jul-06 SiP41111 Vishay Siliconix TYPICAL CHARACTERISTICS 400 7.8 VDD = VHB = 12 V VDD = VHB = 9 V 7.6 7.4 VDDR (V) VOLL, VOLH (mV) 300 200 7.2 VDD = VHB = 13.2 V 7 100 6.8 0 6.6 - 45 - 10 25 60 95 130 - 45 - 10 25 Temperature (°C) 95 130 Temperature (°C) Undervoltage Lockout Threshold vs. Temperature Low Level Output Voltage vs. Temperature 40 t LPLH,t LPHL,t HPLH,t HPHL(ns) 1.5 1.4 VDDH (V) 60 1.3 1.2 t LPLH tHPLH 35 30 25 t HPHL t LPHL 20 15 - 10 25 60 95 130 - 50 0 50 100 150 Temperature (°C) Temperature (°C) Undervoltage Lockout Hysteresis vs. Temperature Propagation Delay vs. Temperature 2 2 1.8 1.8 1.6 1.6 1.4 1.4 1.2 1.2 ILO,I HO (A) IHO ,ILO (A) 1.1 - 45 1 0.8 1 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0 0 0 2 4 6 8 10 11 VHO ,VLO (V) Peak Source Current vs. Output Voltage Document Number: 74292 S-61214–Rev. A, 17-Jul-06 12 0 2 4 6 8 10 11 12 VLO,VHO (V) Peak Sink Current vs. Output Voltage www.vishay.com 7 SiP41111 Vishay Siliconix TYPICAL CHARACTERISTICS 1 250 1-1 IDD vs VDD 1-2 1 IDD, IHB (mA) Forward Current (A) 200 -3 1-4 150 100 IHB vs VHB 50 -5 1 1-6 0 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 0 5 Forward Voltage (V) Bootstrap Diode I-V Characteristics 10 15 VDD, VHB (V) Quiescent Current vs. Voltage DETAIL DESCRIPTION The SiP41111 IC is the high-speed 2 A half bridge MOSFET drivers, which operating between 9 V to 13.2 V. The drivers are designed to drive the upper MOSFET switch directly without any isolation devices for half bridge topology and other topologies, which require the upper switch MOSFET. without significant voltage drop on the bootstrap capacitor. Low ESR ceramic capacitor is recommended for this application. Built-in Bootstrap Diode The thermally enhanced PowerPak SOIC package can dissipate more heat to meet the aggressive 400 kHz switching frequency while driving 1000 pf total gate capacitance MOSFET with typical 15 ns rise and fall time. Bootstrap Supply Operation The power to drive the high-side MOSFET gate comesfrom the external bootstrap capacitor. This capacitor charges through built-in diode during the time when the low-side MOSFET is on (HS is at GND potential), and then provides the necessary charge to turn on the high-side MOSFET. A built-in bootstrap diode eliminates the external discrete diode to improve flexibility of PCB layout in field application. The bootstrap diode is connected between Pin VDD and HB. The diode is used to charge up the external bootstrap capacitor while the lower MOSFET is on, and isolated VDD while the lower MOSFET is off. The voltage rating of the built-in diode is 89 V. This voltage rating enables the half bridge and two switch forward design for 48 V input converter and 24 V input active clamp forward converter. The typical forward drop out voltage is 1.8 V and the reverse time is 10 ns to meet 400 kHz-switching requirement. Under Voltage Lockout Function Bootstrap Capacitor Selection The capacitance of bootstrap capacitor should be carefully selected to avoid the unexpected oscillations at HO pin. The typical capacitance value for the bootstrap capacitor should be at least 0.1 uf to 1 uf or at least 20 time of the total gate capacitance of MOSFET. The energy in the bootstrap capacitor should large enough to supply the driving current for the upper MOSFET during the on time of the upper MOSFET www.vishay.com 8 The SiP41111 has an internal under-voltage lockout feature to prevent driving the MOSFET gates when the supply voltage (at VDD) is less than the under-voltage lockout specification (VDDR). This prevents the output MOSFET from being turned on without sufficient gate voltage to ensure they are fully on. Document Number: 74292 S-61214–Rev. A, 17-Jul-06 SiP41111 Vishay Siliconix Thermal Consideration Layout Consideration The thermal issue of the IC cannot be ignored because the driver IC is the power conversion device. The IC can generate unexpected amount of heat to have high temperature if the thermal issue is not carefully considered at begin of the system level design. The additional heat sink for the IC will increase the cost of materials. The best solution to settle the thermal issue to improve the reliability of the system design is to increase the trace copper area as much as possible for heat dissipation. The PCB traces are not only for electrical connection. It is also used for heat dissipation. Careful PCB layout design is absolutely necessary for any high frequency switching device to avoid circuit function and EMI issues. The following guideline should be carefully followed to optimize the performance of SiP41111 driver. 1. It is strongly recommended to place a 0.1 uf lower ESR decoupling ceramic capacitor right next to the IC from VDD to VSS. The PowerPAK SOIC package is designed to meet the higher ambient environment operation. A heat dissipation pad is built under the body of the SOIC package. Availability of heat dissipation pad under the body of the package doesn't means the thermal issue can be ignored because the PowerPAK is designed to mount the body of the package on the PCB trace for heat dissipation. The PowerPAK cannot dissipate enough heat to provide a cool environment for the IC because the surface area of PowerPAK is small. Large trace area is the best way to control the temperature of the IC in the high ambient environment. 2. The loops formed between device and the gate of the MOSFET should be as small as possible. It is strongly recommended to place the IC right next to the gate of the MOSFET to form small driving loop between pin HO, HS, LO and Vss because high frequency, huge instantaneous current is being sunk and sourced in these loop to drive the gate of the MOSFET, which look like a large capacitive load to the device. If the physical distance can not be minimized due to PCB layout mechanical specification, the width of the loop traces should be increased as much as possible to reduce the impedance of the loop traces. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74292. Document Number: 74292 S-61214–Rev. A, 17-Jul-06 www.vishay.com 9 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1