SIR1309DP-T1-GE3

SiR1309DP www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PowerPAK® SO-8 Single D 5 D 6 D 7 • TrenchFET® Gen IV p-channel power MOSFET D 8 • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 6. 15 m m 1 5 5.1 mm Top View 3 4 S G Bottom View 2 S 1 S APPLICATIONS • Adapter switch • Load switch G • Motor drive control • Battery management PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -10 V RDS(on) max. () at VGS = -4.5 V Qg typ. (nC) ID (A) Configuration S -30 0.0073 0.0130 28 -65.7 Single • Motor drive control D   P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SO-8 SIR1309DP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) LIMIT -30 ± 25 -65.7 -52.6 -19.1 a, b -15.3 a, b -150 -51.6 -4.3 a, b -20 20 56.8 36.3 4.8 a, b 3.0 a, b -55 to +150 260 ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c, d PD TJ, Tstg UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient a, e Maximum junction-to-case (drain) t  10 s Steady state SYMBOL RthJA RthJC TYPICAL 22 1.8 MAXIMUM 26 2.2 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board b. t = 10 s c. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection d. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components e. Maximum under steady state conditions is 70 °C/W S22-0063-Rev. A, 24-Jan-2022 Document Number: 63177 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR1309DP www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = -250 μA -30 - - VDS/TJ ID = -250 μA - -27 - VGS(th) temperature coefficient VGS(th)/TJ ID = -250 μA - 4.4 - Gate-source threshold voltage VDS temperature coefficient mV/°C VGS(th) VDS = VGS, ID = -250 μA -1 - -2.5 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 25 V - - 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a VDS = -30 V, VGS = 0 V - - -1 VDS = -30 V, VGS = 0 V, TJ = 70 °C - - -15 VDS  -10 V, VGS = -10 V -40 - - A  VGS = -10 V, ID = -10 A - 0.006 0.0073 VGS = -4.5 V, ID = -10 A - 0.0102 0.0130 VDS = -10 V, ID = -10 A - 37 - - 3250 - VDS = -15 V, VGS = 0 V, f = 1 MHz - 410 - - 375 - VDS = -15 V, VGS = -10 V, ID = -10 A - 58 87 - 28 42 VDS = -15 V, VGS = -4.5 V, ID = -10 A - 10.7 - - 9.9 - f = 1 MHz 1.1 2.2 3.8 - 12 24 - 7 14 - 40 80 tf - 8 16 td(on) - 26 54 - 67 135 - 30 60 - 20 40 RDS(on) gfs μA S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tr td(off) VDD = -15 V, RL = 1.5 , ID  -10 A, VGEN = -10 V, Rg = 1  VDD = -15 V, RL = 1.5 , ID  -10 A, VGEN = -4.5 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = -5 A, VGS = 0 V IF = -10 A, di/dt = 100 A/μs, TJ = 25 °C - - -51.6 - - -150 - -0.75 -1.1 - 18 36 ns - 8 16 nC - 9 - - 9 - A V ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing  Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S22-0063-Rev. A, 24-Jan-2022 Document Number: 63177 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR1309DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 100 10000 50 VGS = 10 V thru 5 V 40 100 VGS = 3 V 20 1000 30 1st line 2nd line 1000 60 2nd line ID - Drain Current (A) 40 VGS = 4 V 1st line 2nd line 2nd line ID - Drain Current (A) 80 20 100 TC = 25 °C 10 TC = 125 °C TC = -55 °C VGS = 0 V thru 2 V 10 0 0 0.6 1.2 1.8 2.4 10 0 0 3.0 1 2 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title Axis Title 10000 10 000 10000 0.016 0.008 VGS = 10 V 100 1000 1st line 2nd line 1000 VGS = 4.5 V 0.012 2nd line C - Capacitance (pF) Ciss 1st line 2nd line 2nd line RDS(on) - On-Resistance ( ) 4 VDS - Drain-to-Source Voltage (V) 0.020 1000 Coss 100 Crss 0.004 0 16 32 48 64 10 100 10 0 0 80 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title Axis Title 10000 1000 1st line 2nd line VDS = 10 V, 15 V, 20 V 4 100 2 10 0 0 12 24 36 48 60 1.5 VGS = 10 V, 10 A 1000 1.3 1st line 2nd line ID = 10 A 8 6 10000 1.7 2nd line RDS(on) - On-Resistance (Normalized) 10 2nd line VGS - Gate-to-Source Voltage (V) 3 1.1 100 VGS = 4.5 V, 10 A 0.9 10 0.7 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S22-0063-Rev. A, 24-Jan-2022 Document Number: 63177 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR1309DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 0.7 10000 2nd line VGS(th) - Variance (V) 1000 TJ = 150 °C 1 1st line 2nd line 2nd line IS - Source Current (A) 0.5 10 TJ = 25 °C 100 0.1 ID = 250 µA 1000 0.3 1st line 2nd line 100 ID = 5 mA 0.1 100 -0.1 0.01 10 0 0.2 0.4 0.6 0.8 1.0 10 -0.3 1.2 -50 -25 0 25 50 75 100 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage Axis Title 125 150 Axis Title 10000 0.05 10000 500 400 0.02 100 TJ = 125 °C 0.01 1000 300 1st line 2nd line 2nd line P - Power (W) 1000 0.03 1st line 2nd line 2nd line RDS(on) - On-Resistance ( ) ID = 10 A 0.04 200 100 100 TJ = 25 °C 10 0 0 2 4 6 8 0 0.0001 10 10 0.001 0.01 0.1 1 10 VGS - Gate-to-Source Voltage (V) t - Time (s) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Axis Title 10000 1000 IDM limited 100 µs 1000 ID limited 10 1 1st line 2nd line 2nd line ID - Drain Current (A) 100 1 ms 10 ms Limited by RDS(on) a 100 ms100 1s 0.1 10 s TA = 25 °C, single pulse 0.01 0.01 BVDSS limited DC 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient S22-0063-Rev. A, 24-Jan-2022 Document Number: 63177 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR1309DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 75 1000 45 1st line 2nd line 2nd line ID - Drain Current (A) 60 30 100 15 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating a Axis Title Axis Title 10000 70 56 28 100 14 1000 1.5 1st line 2nd line 1000 42 2nd line P - Power (W) 2.0 1st line 2nd line 2nd line P - Power (W) 10000 2.5 1.0 100 0.5 10 0 0 25 50 75 100 125 150 10 0 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S22-0063-Rev. A, 24-Jan-2022 Document Number: 63177 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR1309DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 Duty cycle = 0.5 Notes 0.2 1000 PDM 0.1 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 t1 t2 t1 t2 2. Per unit base = RthJA = 70 °C/W 0.05 1. Duty cycle, D = 3. TJM - TA = PDMZthJA 0.02 100 (t) 4. Surface mounted Single pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title Normalized Effective Transient Thermal Impedance 1 10000 Duty cycle = 0.5 1st line 2nd line 1000 0.2 0.1 100 0.05 0.02 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63177. S22-0063-Rev. A, 24-Jan-2022 Document Number: 63177 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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