SIR178DP-T1-RE3

SiR178DP www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PowerPAK® SO-8 Single D 5 D 6 D 7 6. 15 m m m 1 5m 5.1 Top View • TrenchFET® Gen IV power MOSFET • Very low RDS x Qg figure-of-merit (FOM) • Leadership RDS(ON) minimizes power loss from conduction • 2.5 V ratings and operation at low voltage gate drive • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D 8 3 4 S G Bottom View 2 S 1 S PRODUCT SUMMARY APPLICATIONS VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V RDS(on) max. () at VGS = 2.5 V Qg typ. (nC) 20 0.0004 0.0005 0.0012 95 • Battery management • DC/DC converters • Load switch ID (A) a Configuration 430 Single D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SO-8 SiR178DP-T1-RE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c PD TJ, Tstg LIMIT 20 -8 / +12 430 345 100 b, c 84.5 b, c 500 94.5 5.6 b, c 80 320 104 67 6.3 b, c 4 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT t  10 s RthJA 15 20 Maximum junction-to-ambient b °C/W 0.9 1.2 Maximum junction-to-case (drain) Steady state RthJC Notes a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 54 °C/W S20-0381-Rev. A, 25-May-2020 Document Number: 77598 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR178DP www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 20 - - VDS/TJ ID = 10 mA - 14 - VGS(th) temperature coefficient VGS(th)/TJ ID = 250 μA - -4.4 - Gate-source threshold voltage VDS temperature coefficient mV/°C VGS(th) VDS = VGS, ID = 250 μA 0.6 - 1.5 V Gate-source leakage IGSS VDS = 0 V, VGS = -8 V / +12 V - - ± 150 nA Zero gate voltage drain current IDSS On-state drain current a Drain-source on-state resistance a Forward transconductance a VDS = 20 V, VGS = 0 V - - 1 VDS = 20 V, VGS = 0 V, TJ = 70 °C - - 15 ID(on) VDS  10 V, VGS =10 V 20 - - VGS = 10 V, ID = 30 A - 0.00031 0.0004 RDS(on) VGS = 4.5 V, ID = 30 A - 0.00038 0.0005 VGS = 2.5 V, ID = 30 A - 0.00074 0.0012 VDS = 15 V, ID = 50 A - 295 - - 12 430 - - 4070 - - 740 - - 207 310 - 95 143 - 26.6 - - 18.219 - gfs μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Output charge Qoss VDS = 10 V, VGS = 0 V - 62 - Gate resistance Rg f = 1 MHz 0.2 0.94 1.9 - 17 40 - 10 20 Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 20 A VDS = 10 V, VGS = 4.5 V, ID = 20 A td(on) tr td(off) VDD = 10 V, RL = 1 , ID  10 A, VGEN = 10 V, Rg = 1  pF nC  - 83 170 tf - 14 30 td(on) - 44 90 - 64 130 - 128 260 - 39 80 - - 100 - - 300 - 0.7 1.1 V - 46 90 ns - 55 110 nC - 27 - - 19 - tr td(off) VDD = 10 V, RL = 1 , ID  10 A, VGEN = 4.5 V, Rg = 1  tf ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 10 A, VGS = 0 V IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C A ns Notes g. Pulse test; pulse width  300 μs, duty cycle  2 % h. Guaranteed by design, not subject to production testing  Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0381-Rev. A, 25-May-2020 Document Number: 77598 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR178DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 250 10000 250 VGS = 10 V thru 2.5 V 200 100 1000 150 TC = 25 °C 100 100 50 50 1st line 2nd line 100 2nd line ID - Drain Current (A) 1000 150 1st line 2nd line 2nd line ID - Drain Current (A) 200 TC = 125 °C TC = -55 °C 10 0 0.5 1.0 1.5 2.0 2.5 10 0 3.0 1 2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10000 VGS = 2.5 V 1000 1st line 2nd line 0.001 0.001 VGS = 4.5 V 10000 100 000 100 2nd line C - Capacitance (pF) 0.001 4 Axis Title Axis Title 0.002 2nd line RDS(on) - On-Resistance (Ω) 3 Ciss 1000 10 000 Coss 1st line 2nd line 0 0 Crss 1000 100 0 VGS = 10 V 10 0 50 100 150 10 100 0 200 5 10 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10000 VDS = 10 V 1000 VDS = 5 V 1st line 2nd line 6 VDS = 16 V 4 100 2 10 0 0 50 100 150 200 250 2nd line RDS(on) - On-Resistance (Normalized) 1.4 ID = 20 A 8 20 Axis Title Axis Title 10 2nd line VGS - Gate-to-Source Voltage (V) 15 10000 ID = 30 A VGS = 10 V VGS = 4.5 V 1.2 1000 VGS = 2.5 V 1.0 100 0.8 10 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S20-0381-Rev. A, 25-May-2020 1st line 2nd line 0 Document Number: 77598 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR178DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 TJ = 150 °C 1.2 2nd line VGS(th) (V) 1000 TJ = 25 °C 1 1000 1.0 1st line 2nd line 10 1st line 2nd line 2nd line IS - Source Current (A) 10000 1.4 10000 ID = 250 μA 0.8 100 100 0.1 0.6 0 0.2 0.4 0.6 0.8 10 0.4 10 0.01 -50 1 -25 0 25 75 100 125 150 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage Axis Title Axis Title 0.0020 10000 10000 200 160 0.0015 100 TJ = 125 °C 120 1st line 2nd line 0.0010 1000 2nd line P - Power (W) 1000 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 50 80 100 0.0005 40 TJ = 25 °C 10 0 0 2 4 6 8 0 0.001 10 0.01 0.1 1 10 100 10 1000 VGS - Gate-to-Source Voltage (V) t - Time (s) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Axis Title 1000 Limited by RDS(on) a 10000 IDM limited ID(ON) limited 1 ms 1000 10 10 ms 1st line 2nd line 2nd line ID - Drain Current (A) 100 100 ms 1 0.1 10 s 100 1s TA = 25 °C, single pulse DC BVDSS limited 0.01 0.01 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Note a. VGS > minimum VGS at which RDS(on) is specified S20-0381-Rev. A, 25-May-2020 Document Number: 77598 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR178DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 500 400 200 100 100 1000 75 1st line 2nd line 1000 300 2nd line P - Power (W) 100 1st line 2nd line ID - Drain Current (A) 10000 125 50 100 25 10 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating a 125 150 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Case Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S20-0381-Rev. A, 25-May-2020 Document Number: 77598 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR178DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 0.2 Notes 0.1 PDM 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 t1 0.05 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 54 °C/W 0.02 3. TJM - TA = PDMZthJA (t) 4. Surface mounted Single pulse 0.01 0.0001 100 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 1 0.2 1000 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.05 0.1 0.02 100 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77598. S20-0381-Rev. A, 25-May-2020 Document Number: 77598 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8, (Single/Dual) L H E2 K E4 θ D4 W 1 M 1 Z 2 D5 D2 e 2 D1 D 2 D 3 4 θ 4 b 3 L1 E3 θ A1 Backside View of Single Pad H K E2 E4 L 1 D1 D5 2 D2 Detail Z K1 2 E1 E D3 (2x) D4 c A θ 3 4 Notes 1. Inch will govern. 2 Dimensions exclusive of mold gate burrs. 3. Dimensions exclusive of mold flash and cutting burrs. DIM. A A1 b c D D1 D2 D3 D4 D5 E E1 E2 E3 E4 e K K1 H L L1  W M b D2 E3 Backside View of Dual Pad MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. 0.97 1.04 0.41 0.28 5.15 4.90 3.76 1.50 0.57 typ. 3.98 typ. 6.15 5.89 3.66 3.78 0.75 typ. 1.27 BSC 1.27 typ. 0.61 0.61 0.13 0.25 0.125 typ. 1.12 0.05 0.51 0.33 5.26 5.00 3.91 1.68 0.038 0 0.013 0.009 0.199 0.189 0.140 0.052 0.044 0.002 0.020 0.013 0.207 0.197 0.154 0.066 6.25 5.99 3.84 3.91 0.238 0.228 0.137 0.145 0.71 0.71 0.20 12° 0.36 0.022 0.020 0.020 0.002 0° 0.006 0.041 0.016 0.011 0.203 0.193 0.148 0.059 0.0225 typ. 0.157 typ. 0.242 0.232 0.144 0.149 0.030 typ. 0.050 BSC 0.050 typ. 0.024 0.024 0.005 0.010 0.005 typ. 0.33 0.23 5.05 4.80 3.56 1.32 6.05 5.79 3.48 3.68 0.56 0.51 0.51 0.06 0° 0.15 0.246 0.236 0.151 0.154 0.028 0.028 0.008 12° 0.014 ECN: S17-0173-Rev. L, 13-Feb-17 DWG: 5881 Revison: 13-Feb-17 1 Document Number: 71655 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72599 Revision: 21-Jan-08 www.vishay.com 15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000