SIR408DP-T1-GE3

SiR408DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0063 at VGS = 10 V 50a 0.008 at VGS = 4.5 V 50a VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 9.3 nC PowerPAK® SO-8 APPLICATIONS S 6.15 mm • Server • POL • DC/DC High Side 5.15 mm 1 S 2 S 3 G D 4 D 8 D 7 G D 6 D 5 Bottom View S Ordering Information: SiR408DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Avalanche Energy Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.1 mH TC = 25 °C Continuous Source-Drain Diode Current TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Limit 25 ± 20 50a 50a 21.5b, c 17.2b, c 70 35 61 37.2 4b, c 44.6 28.6 4.8b, c 3.1b, c - 55 to 150 260 ID IDM IAS EAS IS PD TJ, Tstg Unit V A mJ A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 21 2.4 Maximum 26 2.8 Unit °C/W Notes: a. Based on TC = 25 °C. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 70 °C/W. Document Number: 65036 S09-1396-Rev. A, 20-Jul-09 www.vishay.com 1 SiR408DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 25 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS , ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 27 mV/°C - 5.5 1 2.5 V ± 100 nA VDS = 25 V, VGS = 0 V 1 VDS = 25 V, VGS = 0 V, TJ = 55 °C 5 VDS ≥ 5 V, VGS = 10 V 50 µA A VGS = 10 V, ID = 20 A 0.0052 0.0063 VGS = 4.5 V, ID = 15 A 0.0064 0.008 VDS = 15 V, ID = 20 A 85 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 1230 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 12.5 V, VGS = 10 V, ID = 20 A VDS = 12.5 V, VGS = 4.5 V, ID = 20 A td(off) pF 21.5 33 9.3 14 3.2 f = 1 MHz VDD = 12.5 V, RL = 12.5 Ω ID ≅ 1.0 A, VGEN = 4.5 V, Rg = 1 Ω 0.8 1.6 20 30 28 42 30 45 tf 11 20 td(on) 12 25 tr td(off) nC 2.6 td(on) tr 315 115 VDD = 12.5 V, RL = 12.5 Ω ID ≅ 1.0 A, VGEN = 10 V, Rg = 1 Ω tf 15 25 30 45 8 15 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 44.6 70 IS = 4.0 A, VGS = 0 V IF = 4.0 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.75 1.2 V 26 50 ns 24 50 nC 16.5 9.5 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65036 S09-1396-Rev. A, 20-Jul-09 SiR408DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 70 VGS = 10 V thru 4 V TC = 125 °C 60 50 40 VGS = 3 V 30 20 ID - Drain Current (A) ID - Drain Current (A) 0.8 0.6 0.4 0.2 TC = 25 °C 10 0 0.0 0.5 1.0 1.5 0.0 0.0 2.0 0.5 1.0 TC = - 55 °C 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0100 3.0 1600 0.0085 1200 0.0070 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V 0.0055 VGS = 10 V Coss 800 400 0.0040 Crss 0.0025 0 0 20 40 60 80 100 120 0 10 15 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 25 1.6 10 ID = 20 A ID = 20 A VDS = 6.25 V VGS = 10 V 1.4 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 5 VDS = 18.75 V 6 4 VDS = 12.5 V 1.2 VGS = 4.5 V 1.0 0.8 2 0 0 4 8 12 16 20 24 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 65036 S09-1396-Rev. A, 20-Jul-09 150 www.vishay.com 3 SiR408DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.030 ID = 20 A TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 25 °C 1 TJ = - 50 °C 0.1 0.01 0.024 0.018 0.012 TJ = 125 °C 0.006 TJ = 25 °C 0.000 0.4 0.2 0.8 0.6 1.0 0 1.2 1 2 3 4 5 6 7 8 9 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 150 0.2 120 - 0.1 ID = 1 mA - 0.4 10 90 Power (W) VGS(th) Variance (V) 0.001 0.0 60 ID = 250 µA - 0.7 - 1.0 - 50 30 - 25 0 25 50 75 100 125 0 150 0 .0 0 1 0.01 0.1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 100 10 Limited by RDS(on)* 100 µs ID - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 100 s, DC BVDSS Limited TA = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 65036 S09-1396-Rev. A, 20-Jul-09 SiR408DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 75 ID - Drain Current (A) 60 45 Package Limited 30 15 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 55 2.20 44 1.76 33 1.32 Power (W) Power (W) Current Derating* 22 0.88 0.44 11 0.00 0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65036 S09-1396-Rev. A, 20-Jul-09 www.vishay.com 5 SiR408DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65036. www.vishay.com 6 Document Number: 65036 S09-1396-Rev. A, 20-Jul-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1