SIR4606DP-T1-GE3

SiR4606DP www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PowerPAK® SO-8 Single D 5 D 6 D 7 • TrenchFET® Gen IV power MOSFET D 8 • Tuned for the lowest RDS - Qoss FOM • 100 % Rg and UIS tested 6. 15 m m 1 5 5.1 mm Top View 3 4 S G Bottom View 2 S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 S APPLICATIONS • Primary side switch • Synchronous rectification • DC/DC converter PRODUCT SUMMARY VDS (V) 0.0185 • Boost converter RDS(on) max. (Ω) at VGS = 7.5 V 0.0225 • LED backlighting ID (A) a, f Configuration G • Motor drive switch 60 RDS(on) max. (Ω) at VGS = 10 V Qg typ. (nC) D S 6.9 N-Channel MOSFET 16 Single ORDERING INFORMATION Package PowerPAK SO-8 Lead (Pb)-free and halogen-free SiR4606DP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 60 Gate-source voltage VGS ± 20 TC = 70 °C TA = 25 °C ID Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy IDM TC = 25 °C TA = 25 °C L = 0.1 mH IS Maximum power dissipation TA = 25 °C Operating junction and storage temperature range 40 A 16 a 2.6 b, c 12 EAS 7.2 mJ 31.2 PD 20 3.7 b, c W 2.4 b, c TA = 70 °C Soldering recommendations (peak temperature) d, e 10.5 b, c IAS TC = 25 °C TC = 70 °C 16 a 8.4 b, c TA = 70 °C Pulsed drain current (t = 100 μs) V 16 a TC = 25 °C Continuous drain current (TJ = 150 °C) UNIT TJ, Tstg -55 to +150 260 °C Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. TC = 25 °C S21-0898-Rev. A, 30-Aug-2021 Document Number: 63129 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR4606DP www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient a, b Maximum junction-to-case (drain) t ≤ 10 s Steady state SYMBOL RthJA RthJC TYPICAL 26 2.9 MAXIMUM 34 4 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board b. Maximum under steady state conditions is 70 °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER Static Drain-source breakdown voltage VDS temperature coefficient VGS(th) temperature coefficient Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current TEST CONDITIONS MIN. TYP. MAX. UNIT VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 μA 60 2 10 - 35 -7.1 0.0142 0.0166 25 4 100 1 10 0.0185 0.0225 - V 0.3 - 540 150 11 8.9 6.9 2.5 1.8 9 1.3 10 5 14 5 10 5 12 5 13.5 10.5 2.6 20 10 30 10 20 10 25 10 - 0.85 38 23 17 21 16 40 1.2 75 45 - IDSS On-state drain current a Drain-source on-state resistance SYMBOL ID(on) a Forward transconductance a Dynamic b Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Output charge Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulse diode forward current Body diode voltage Body diode reverse recovery time Body diode reverse recovery charge Reverse recovery fall time Reverse recovery rise time RDS(on) gfs Ciss Coss Crss Qg ID = 250 μA VDS = VGS, ID = 250 μA VDS = 0 V, VGS = ± 20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 70 °C VDS ≥ 10 V, VGS = 10 V VGS = 10 V, ID = 4 A VGS = 7.5 V, ID = 4 A VDS = 15 V, ID = 10 A VDS = 30 V, VGS = 0 V, f = 1 MHz VDS = 30 V, VGS = 10 V, ID = 4 A Qgs Qgd Qoss Rg td(on) tr td(off) tf td(on) tr td(off) tf VDS = 30 V, VGS = 7.5 V, ID = 4 A IS ISM VSD trr Qrr ta tb TC = 25 °C VDS = 30 V, VGS = 0 V f = 1 MHz VDD = 30 V, RL = 7.5 Ω, ID ≅ 4 A, VGEN = 10 V, Rg = 1 Ω VDD = 30 V, RL = 7.5 Ω, ID ≅ 4 A, VGEN = 7.5 V, Rg = 1 Ω IS = 4 A, VGS = 0 V IF = 4 A, di/dt = 100 A/μs, TJ = 25 °C mV/°C V nA μA A Ω S pF nC Ω ns A V ns nC ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0898-Rev. A, 30-Aug-2021 Document Number: 63129 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR4606DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 40 10000 10000 1000 1st line 2nd line 25 20 VGS = 5 V 15 100 10 30 1000 20 1st line 2nd line 30 2nd line ID - Drain Current (A) VGS = 10 V thru 6 V 35 2nd line ID - Drain Current (A) 40 TC = 25 °C 100 10 TC = 125 °C 5 VGS = 4 V TC = -55 °C 0 0 0.5 1.0 1.5 2.0 2.5 10 0 10 0 3.0 1 2 3 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 6 Axis Title Axis Title 1000 10000 0.024 10000 0.022 1000 VGS = 7.5 V 0.018 0.016 100 0.014 VGS = 10 V 100 1000 Coss 1st line 2nd line 0.020 2nd line C - Capacitance (pF) Ciss 1st line 2nd line RDS(on) - On-Resistance ( ) 4 10 100 Crss 0.012 10 0.010 10 20 30 1 40 10 0 10 20 40 50 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10000 VDS = 30 V 1000 1st line 2nd line VDS = 15 V VDS = 48 V 4 100 2 10 0 2 4 6 8 10 2nd line RDS(on) - On-Resistance (Normalized) 8 6 10000 1.8 ID = 4 A 0 60 Axis Title Axis Title 10 2nd line VGS - Gate-to-Source Voltage (V) 30 ID = 4 A 1.6 VGS = 10 V 1000 1.4 VGS = 7.5 V 1.2 100 1.0 0.8 10 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S21-0898-Rev. A, 30-Aug-2021 1st line 2nd line 0 Document Number: 63129 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR4606DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 3.4 10000 TJ = 25 °C 1 3.0 1000 2.8 1st line 2nd line 2nd line VGS(th) (V) 1000 1st line 2nd line 2nd line IS - Source Current (A) 3.2 TJ = 150 °C 10 ID = 250 µA 2.6 100 100 2.4 0.1 2.2 10 0.01 0 0.2 0.4 0.6 0.8 1.0 2.0 1.2 10 -50 -25 0 25 75 100 125 150 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage Axis Title Axis Title 0.08 10000 10000 50 40 2nd line P - Power (W) 1000 0.04 TJ = 125 °C 100 1000 30 1st line 2nd line 0.06 1st line 2nd line 2nd line RDS(on) - On-Resistance ( ) 50 20 100 0.02 10 TJ = 25 °C 10 0 0 2 4 6 8 0 0.001 10 0.01 0.1 1 10 100 10 1000 VGS - Gate-to-Source Voltage (V) t - Time (s) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Axis Title 100 IDM limited 10000 Limited by RDS(on) a 10 1000 100 µs 1 ms 1 10 ms 1st line 2nd line 2nd line ID - Drain Current (A) ID(ON) limited 100 100 ms 0.1 TA = 25 °C, single pulse 10 s 1s BVDSS limited DC 10 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient S21-0898-Rev. A, 30-Aug-2021 Document Number: 63129 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR4606DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 35 40 10000 20 Package limited 15 100 10 1000 1st line 2nd line 1000 2nd line P - Power (W) 30 25 1st line 2nd line 2nd line ID - Drain Current (A) 30 20 100 10 5 10 0 0 25 50 75 100 125 150 10 0 0 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating a Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S21-0898-Rev. A, 30-Aug-2021 Document Number: 63129 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR4606DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 0.2 Notes 0.1 PDM 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 t1 0.05 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 70 °C/W 0.02 3. TJM - TA = PDMZthJA Single pulse 0.01 0.0001 0.001 100 (t) 4. Surface mounted 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty cycle = 0.5 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.2 0.1 0.05 100 0.02 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63129. S21-0898-Rev. A, 30-Aug-2021 Document Number: 63129 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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