SiR4608DP
www.vishay.com
Vishay Siliconix
N-Channel 60 V (D-S) MOSFET
FEATURES
PowerPAK® SO-8 Single
D
5
D
6
D
7
• TrenchFET® Gen IV power MOSFET
D
8
• Very low RDS - Qg figure-of-merit (FOM)
• Tuned for the lowest RDS - Qoss FOM
• 100 % Rg and UIS tested
6.
15
m
m
m
1
5m
5.1
Top View
3
4 S
G
Bottom View
2
S
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
1
S
APPLICATIONS
PRODUCT SUMMARY
VDS (V)
RDS(on) max. (Ω) at VGS = 10 V
RDS(on) max. (Ω) at VGS = 7.5 V
Qg typ. (nC)
ID (A) a
Configuration
D
• Synchronous rectification
• Primary side switch
60
0.0118
0.0150
8.9
42.8
Single
• DC/DC converter
G
• Motor drive switch
• Battery and load switch
S
• Industrial
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK SO-8
SIR4608DP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
SYMBOL
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 100 μs)
ID
IDM
Continuous source-drain diode current
TC = 25 °C
TA = 25 °C
IS
Single pulse avalanche current
Single pulse avalanche energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
TC = 70 °C
Maximum power dissipation
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
PD
TJ, Tstg
LIMIT
60
± 20
42.8
34.3
13.1 b, c
10.5 b, c
100
35.5
3.3 b, c
15
11.25
39
25
3.6 b, c
2.3 b, c
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum junction-to-ambient b
t ≤ 10 s
RthJA
24
34
°C/W
2.5
3.2
Maximum junction-to-case (drain)
Steady state
RthJC
Notes
a. TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 70 °C/W
S22-0139-Rev. B, 14-Feb-2022
Document Number: 62009
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR4608DP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
Static
Drain-source breakdown voltage
VDS
VGS = 0 V, ID = 250 μA
60
-
-
ΔVDS/TJ
ID = 10 mA
-
34
-
VGS(th) temperature coefficient
ΔVGS(th)/TJ
ID = 250 μA
-
-5.7
-
Gate-source threshold voltage
VDS temperature coefficient
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
2
-
4
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
100
nA
Zero gate voltage drain current
IDSS
Drain-source on-state resistance a
Forward transconductance a
RDS(on)
gfs
VDS = 60 V, VGS = 0 V
-
-
1
VDS = 60 V, VGS = 0 V, TJ = 70 °C
-
-
15
VGS = 10 V, ID = 10 A
-
0.0099
0.0118
VGS = 7.5 V, ID = 10 A
-
0.0115
0.0150
VDS = 15 V, ID = 10 A
-
31
-
-
740
-
-
195
-
-
7
-
-
11.7
18
-
8.9
13.5
-
4.2
-
-
1.9
-
μA
Ω
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
VDS = 30 V, VGS = 0 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 10 A
VDS = 30 V, VGS = 7.5 V, ID = 10 A
Gate-source charge
Qgs
Gate-drain charge
Qgd
Output charge
Qoss
VDS = 30 V, VGS = 0 V
-
12.2
-
Gate resistance
Rg
f = 1 MHz
0.7
1.5
2.6
-
10
20
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
VDD = 30 V, RL = 3 Ω, ID ≅ 10 A,
VGEN = 10 V, Rg = 1 Ω
-
4
8
-
14
28
tf
-
4
8
td(on)
-
11
22
-
5
10
-
13
26
-
4
8
td(off)
tr
td(off)
VDD = 30 V, RL = 3 Ω, ID ≅ 10 A,
VGEN = 7.5 V, Rg = 1 Ω
tf
pF
nC
Ω
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current
ISM
Body diode voltage
VSD
TC = 25 °C
IS = 5 A, VGS = 0 V
-
-
35.5
-
-
100
-
0.82
1.1
A
V
Body diode reverse recovery time
trr
-
20
40
ns
Body diode reverse recovery charge
Qrr
-
12
24
nC
Reverse recovery fall time
ta
-
12
-
Reverse recovery rise time
tb
-
8
-
IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C
ns
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S22-0139-Rev. B, 14-Feb-2022
Document Number: 62009
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR4608DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
100
VGS = 10 V thru 6 V
VGS = 5 V
40
100
1000
36
1st line
2nd line
1000
60
2nd line
ID - Drain Current (A)
48
1st line
2nd line
2nd line
ID - Drain Current (A)
80
10000
60
24
100
TC = 25 °C
12
20
VGS = 4 V thru 0V
10
0
0
1
2
3
4
TC = -55 °C
TC = 125 °C
10
0
0
5
1.6
3.2
4.8
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
10000
10000
1000
Ciss
1000
1st line
2nd line
VGS = 7.5 V
0.012
0.011
100
VGS = 10 V
100
1000
Coss
1st line
2nd line
0.013
2nd line
C - Capacitance (pF)
0.014
2nd line
RDS(on) - On-Resistance (Ω)
8
VDS - Drain-to-Source Voltage (V)
0.015
100
10
0.010
Crss
0
16
32
48
64
10
1
10
0.009
0
80
12
24
36
48
60
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
Axis Title
10000
1000
1st line
2nd line
VDS = 20 V, 30 V, 40 V
4
100
2
10
0
0
2
4
6
8
10
12
1.6
VGS = 10 V, 10 A
1000
1.4
1st line
2nd line
ID = 10 A
8
6
10000
1.8
2nd line
RDS(on) - On-Resistance (Normalized)
10
2nd line
VGS - Gate-to-Source Voltage (V)
6.4
1.2
1.0
100
VGS = 7.5 V, 10 A
0.8
10
0.6
-50
-25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S22-0139-Rev. B, 14-Feb-2022
Document Number: 62009
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR4608DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
0.5
10000
100
TJ = 150 °C
1
TJ = 25 °C
100
0.1
1000
-0.1
1st line
2nd line
2nd line
VGS(th) - Variance (V)
1000
1st line
2nd line
2nd line
IS - Source Current (A)
0.2
10
ID = 5 mA
-0.4
100
ID = 250 μA
-0.7
0.01
10
0
0.2
0.4
0.6
0.8
1.0
10
-1.0
1.2
-50
-25
0
25
50
75
100
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
Source-Drain Diode Forward Voltage
Threshold Voltage
Axis Title
125
150
Axis Title
10000
0.05
10000
200
160
TJ = 125 °C
0.02
100
1000
120
1st line
2nd line
2nd line
P - Power (W)
1000
0.03
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
ID = 10 A
0.04
80
100
TJ = 25 °C
0.01
40
10
0
0
2
4
6
8
10
0
0.001
10
0.01
0.1
1
10
VGS - Gate-to-Source Voltage (V)
t - Time (s)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
1000
10000
IDM limited
1000
100
μs
ID limited
10
1 ms
1
Limited by RDS(on)
a
10100
ms
100 ms
1s
0.1
10s
TA = 25 °C,
single pulse
0.01
0.01
1st line
2nd line
2nd line
ID - Drain Current (A)
100
BVDSS limited
DC
10
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
Safe Operating Area, Junction-to-Ambient
Note
a. VGS > minimum VGS at which RDS(on) is specified
S22-0139-Rev. B, 14-Feb-2022
Document Number: 62009
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR4608DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
50
1000
30
1st line
2nd line
2nd line
ID - Drain Current (A)
40
20
100
10
10
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating a
Axis Title
Axis Title
10000
50
2.0
1st line
2nd line
20
100
10
1000
1.5
1st line
2nd line
1000
30
2nd line
P - Power (W)
40
2nd line
P - Power (W)
10000
2.5
1.0
100
0.5
10
0
0
25
50
75
100
125
150
10
0
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
150
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S22-0139-Rev. B, 14-Feb-2022
Document Number: 62009
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR4608DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
Duty cycle = 0.5
Notes
0.2
PDM
0.1
0.1
1000
1st line
Normalized Effective Transient
Thermal Impedance
1
t1
0.05
t2
t1
1. Duty cycle, D = t
2
2. Per unit base = RthJA = 70 °C/W
0.02
3. TJM - TA = PDMZthJA
Single pulse
100
(t)
4. Surface mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
1
10000
0.2
1000
0.1
1st line
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.05
0.1
0.02
100
Single pulse
0.01
0.0001
10
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62009.
S22-0139-Rev. B, 14-Feb-2022
Document Number: 62009
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2023
1
Document Number: 91000
