SIR476DP-T1-GE3

New Product SiR476DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0017 at VGS = 10 V 60 0.0021 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 42.5 nC S • VRM, POL, Server • High Current DC/DC - Low-Side • OR-ing 5.15 mm 1 Halogen-free TrenchFET® Gen III Power MOSFET 100 % Rg Tested 100 % Avalanche Tested RoHS COMPLIANT APPLICATIONS PowerPAK® SO-8 6.15 mm • • • • S 2 S 3 D G 4 D 8 D 7 G D 6 D 5 Bottom View S N-Channel MOSFET Ordering Information: SiR476DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit 25 ± 20 ID Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e V 60a 60a 45b, c 36b, c 100 IDM Pulsed Drain Current Unit A 60a 5.6b, c 50 125 104 66.6 mJ 6.25b, c 4.0b, c - 55 to 150 260 W °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb, f Maximum Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 15 0.9 Maximum 20 1.2 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 54 °C/W. Document Number: 68764 S-81715-Rev. A, 04-Aug-08 www.vishay.com 1 New Product SiR476DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 25 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient V 23 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 25 V, VGS = 0 V 1 VDS = 25 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≥ 5 V, VGS = 10 V - 6.3 1.0 30 µA A VGS = 10 V, ID = 20 A 0.0014 0.0017 VGS = 4.5 V, ID = 20 A 0.00175 0.0021 VDS = 10 V, ID = 20 A 98 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 6150 VDS = 10 V, VGS = 0 V, f = 1 MHz 640 VDS = 10 V, VGS = 10 V, ID = 20 A VDS = 10 V, VGS = 4.5 V, ID = 20 A tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time f = 1 MHz VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 64 16 0.2 1.0 2 20 40 9 18 48 90 18 td(on) 50 90 VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω tf Fall Time 42.5 9 td(off) Turn-Off Delay Time 135 tf tr Rise Time 89 nC 12 td(on) Turn-On Delay Time pF 1510 31 60 60 100 48 90 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current a IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 60 100 IS = 5 A IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.73 1.1 V 43 80 ns 40 80 nC 21 22 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68764 S-81715-Rev. A, 04-Aug-08 New Product SiR476DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 80 10 VGS = 10 thru 4 V 8 I D - Drain Current (A) I D - Drain Current (A) 64 48 32 VGS = 3 V 16 6 4 TC = 25 °C 2 TC = 125 °C 0 0.0 TC = - 55 °C 0 0.5 1.0 1.5 2.0 2.5 0 1 2 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 7600 0.0020 Ciss VGS = 4.5 V 6080 0.0018 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 3 0.0016 VGS = 10 V 0.0014 4560 3040 Coss 0.0012 1520 0.0010 0 Crss 0 16 32 48 64 0 80 10 15 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 25 1.7 10 ID = 20 A ID = 20 A VGS = 10 V 1.5 8 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 5 VDS = 5 V 6 VDS = 15 V VDS = 10 V 4 1.3 1.1 VGS = 4.5 V 0.9 2 0 0 20 Document Number: 68764 S-81715-Rev. A, 04-Aug-08 40 60 80 100 0.7 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SiR476DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.005 100 ID = 20 A TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 0.001 0.0 0.004 0.003 TJ = 125 °C 0.002 TJ = 25 °C 0.001 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 200 0.2 160 Power (W) VGS(th) Variance (V) 4 - 0.1 ID = 5 mA - 0.4 120 80 ID = 250 µA - 0.7 - 1.0 - 50 40 0 - 25 0 25 50 75 100 125 150 0.001 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 1 ms I D - Drain Current (A) 10 10 ms 100 ms 1 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.01 BVDSS Limited 0.1 1 10 VDS - Drain-to-Source Voltage (V) 100 * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 68764 S-81715-Rev. A, 04-Aug-08 New Product SiR476DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 210 I D - Drain Current (A) 168 126 84 Package Limited 42 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 125 3.0 100 2.4 Power (W) Power (W) Current Derating* 75 50 1.8 1.2 0.6 25 0.0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68764 S-81715-Rev. A, 04-Aug-08 www.vishay.com 5 New Product SiR476DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 54 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68764. www.vishay.com 6 Document Number: 68764 S-81715-Rev. A, 04-Aug-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000