SIR5708DP-T1-RE3

SiR5708DP www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PowerPAK® SO-8 Single D 5 D 6 D 7 • TrenchFET® Gen V power MOSFET D 8 • Very low RDS x Qg figure-of-merit (FOM) • Tuned for the lowest RDS x Qoss FOM • 100 % Rg and UIS tested 6. 15 m m m 1 5m 5.1 Top View 3 4 S G Bottom View 2 S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 S APPLICATIONS • • • • • PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 7.5 V Qg typ. (nC) ID (A) a Configuration 150 0.023 0.027 9.7 33.8 Single D Synchronous rectification Primary side switch DC/DC converters Power supplies Motor drive control G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SO-8 SIR5708DP-T1-RE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e PD TJ, Tstg LIMIT 150 ± 20 33.8 27 9.5 b, c 7.6 b, c 80 59.8 4.7 b, c 15 11.25 65.7 42 5.2 b, c 3.3 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b t ≤ 10 s RthJA 20 24 °C/W 1.5 1.9 Maximum junction-to-case (drain) Steady state RthJC Notes a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 62.5 °C/W S22-0175-Rev. A, 14-Feb-2022 Document Number: 62040 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR5708DP www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 1 mA 150 - - ΔVDS/TJ ID = 10 mA - 124 - VGS(th) temperature coefficient ΔVGS(th)/TJ ID = 250 μA - -8.6 - Gate-source threshold voltage VDS temperature coefficient mV/°C VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - 100 nA Zero gate voltage drain current IDSS Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 120 V, VGS = 0 V - - 1 VDS = 120 V, VGS = 0 V, TJ = 70 °C - - 15 VGS = 10 V, ID = 10 A - 0.019 0.023 VGS = 7.5 V, ID = 10 A - 0.022 0.027 VDS = 15 V, ID = 10 A - 24 - - 975 - - 130 - - 5.2 - - 12.8 20 - 9.7 15 - 6.0 - - 1.4 - μA Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg VDS = 75 V, VGS = 0 V, f = 1 MHz VDS = 75 V, VGS = 10 V, ID = 10 A VDS = 75 V, VGS = 7.5 V, ID = 10 A Gate-source charge Qgs Gate-drain charge Qgd Output charge Qoss VDS = 75 V, VGS = 0 V - 43 - Gate resistance Rg f = 1 MHz 0.5 1.25 2.1 - 12 24 - 6 12 - 16 32 tf - 9 18 td(on) - 13 26 - 8 16 - 15 30 - 9 18 Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tr td(off) VDD = 75 V, RL = 7.5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω VDD = 75 V, RL = 7.5 Ω, ID ≅ 10 A, VGEN = 7.5 V, Rg = 1 Ω tf pF nC Ω ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 5 A, VGS = 0 V IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C - - 59.8 - - 80 - 0.79 1.1 - 63 126 ns - 130 260 nC - 52 - - 11 - A V ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S22-0175-Rev. A, 14-Feb-2022 Document Number: 62040 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR5708DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 80 10000 80 VGS = 10 V thru 7 V VGS = 6 V 32 100 1000 48 1st line 2nd line 1000 48 2nd line ID - Drain Current (A) 64 1st line 2nd line 32 100 TC = 25 °C 16 16 VGS = 5 V thru 0 V TC = -55 °C TC = 125 °C 0 1 2 3 4 10 0 10 0 0 5 2 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title 10 Axis Title 10000 10 000 10000 Ciss 1000 0.028 VGS = 7.5 V 0.022 100 0.016 2nd line C - Capacitance (pF) 0.034 1st line 2nd line 2nd line RDS(on) - On-Resistance ( ) 8 VDS - Drain-to-Source Voltage (V) 0.040 1000 1000 Coss 100 100 Crss 10 VGS = 10 V 0 16 32 48 64 10 1 10 0.010 0 80 30 60 90 120 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title 1st line 2nd line VDS = 50 V, 75 V, 100 V 4 100 2 10 0 3 6 9 12 15 2.1 VGS = 10 V, 10 A 1000 1.7 1st line 2nd line 1000 2nd line RDS(on) - On-Resistance (Normalized) ID = 10 A 6 10000 2.5 8 0 150 Axis Title 10000 10 2nd line VGS - Gate-to-Source Voltage (V) 6 1st line 2nd line 2nd line ID - Drain Current (A) 64 1.3 VGS = 7.5 V, 10 A 0.9 10 0.5 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S22-0175-Rev. A, 14-Feb-2022 100 Document Number: 62040 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR5708DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 0.6 10000 100 TJ = 150 °C 1 TJ = 25 °C 100 0.1 1000 -0.2 ID = 5 mA -0.6 100 ID = 250 µA -1.0 0.01 10 0 0.2 0.4 0.6 0.8 1.0 1st line 2nd line 2nd line VGS(th) - Variance (V) 1000 1st line 2nd line 2nd line IS - Source Current (A) 0.2 10 10 -1.4 1.2 -50 -25 0 25 50 75 100 125 150 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage Axis Title Axis Title 10000 0.10 10000 800 640 TJ = 125 °C 0.04 100 0.02 1000 480 1st line 2nd line 2nd line P - Power (W) 1000 0.06 1st line 2nd line 2nd line RDS(on) - On-Resistance ( ) ID = 10 A 0.08 320 100 160 TJ = 25 °C 10 0 5 6 7 8 9 0 0.0001 10 10 0.001 0.01 0.1 1 10 VGS - Gate-to-Source Voltage (V) t - Time (s) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Axis Title 10000 1000 IDM limited 1000 ID limited 10 100 µs 1st line 2nd line 2nd line ID - Drain Current (A) 100 1 ms 1 Limited by RDS(on) a 10 ms 100 100 ms 0.1 1s TA = 25 °C, single pulse 0.01 0.01 10 s BVDSS limited DC 0.1 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Note a. VGS > minimum VGS at which RDS(on) is specified S22-0175-Rev. A, 14-Feb-2022 Document Number: 62040 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR5708DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 40 1000 24 1st line 2nd line 2nd line ID - Drain Current (A) 32 16 100 8 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating a Axis Title Axis Title 10000 80 2.0 1st line 2nd line 32 100 16 1000 1.5 1st line 2nd line 1000 48 2nd line P - Power (W) 64 2nd line P - Power (W) 10000 2.5 1.0 100 0.5 10 0 0 25 50 75 100 125 150 10 0 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S22-0175-Rev. A, 14-Feb-2022 Document Number: 62040 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR5708DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 Duty cycle = 0.5 Notes 0.2 PDM 0.1 0.1 t1 0.05 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 62.5 °C/W 0.02 3. TJM - TA = PDMZthJA Single pulse 0.01 0.0001 0.001 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.01 100 (t) 4. Surface mounted 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 0.2 1000 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.05 0.1 0.02 100 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62040. S22-0175-Rev. A, 14-Feb-2022 Document Number: 62040 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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