SiR582DP
www.vishay.com
Vishay Siliconix
N-Channel 80 V (D-S) MOSFET
FEATURES
PowerPAK® SO-8 Single
D
5
D
6
D
7
• TrenchFET® Gen V power MOSFET
D
8
• Very low RDS x Qg figure-of-merit (FOM)
• Tuned for the lowest RDS x Qoss FOM
• 100 % Rg and UIS tested
6.
15
m
m
m
1
5m
5.1
Top View
3
4 S
G
Bottom View
2
S
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
1
S
APPLICATIONS
PRODUCT SUMMARY
VDS (V)
RDS(on) max. (Ω) at VGS = 10 V
RDS(on) max. (Ω) at VGS = 7.5 V
Qg typ. (nC)
ID (A)
Configuration
D
• Synchronous rectification
• Primary side switch
80
0.0034
0.0039
33.5
116
Single
• DC/DC converters
G
• OR-ing and hot swap switch
• Power supplies
S
• Motor drive control
• Battery management
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
Alternate manufacturing location
PowerPAK SO-8
SIR582DP-T1-RE3
SIR582DP-T1-BE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
SYMBOL
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 100 μs)
Continuous source-drain diode current
Single pulse avalanche current
Single pulse avalanche energy
ID
IDM
TC = 25 °C
TA = 25 °C
IS
L = 0.1 mH
IAS
EAS
TC = 25 °C
TC = 70 °C
Maximum power dissipation
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) c
PD
TJ, Tstg
LIMIT
80
± 20
116
93
28.9 b, c
23.1 b, c
300
84.1 a
5.1 b, c
40
80
92.5
59.2
5.6 b, c
3.6 b, c
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum junction-to-ambient b
t ≤ 10 s
RthJA
18
22
°C/W
1.1
1.35
Maximum junction-to-case (drain)
Steady state
RthJC
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 62.5 °C/W
g. TC = 25 °C
S23-1066-Rev. B, 04-Dec-2023
Document Number: 63128
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR582DP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
Static
Drain-source breakdown voltage
VDS
VGS = 0 V, ID = 1 mA
80
-
-
ΔVDS/TJ
ID = 10 mA
-
52
-
VGS(th) temperature coefficient
ΔVGS(th)/TJ
ID = 250 μA
-
-6.3
-
Gate-source threshold voltage
VDS temperature coefficient
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
2
-
4
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
100
nA
Zero gate voltage drain current
IDSS
Drain-source on-state resistance a
Forward transconductance a
RDS(on)
gfs
VDS = 64 V, VGS = 0 V
-
-
1
VDS = 64 V, VGS = 0 V, TJ = 70 °C
-
-
15
VGS = 10 V, ID = 15 A
-
0.0028
0.0034
VGS = 7.5 V, ID = 10 A
-
0.0032
0.0039
VDS = 15 V, ID = 15 A
-
42
-
-
3360
-
-
1020
-
-
9.5
-
-
44.5
67
-
33.5
51
-
16.3
-
-
4.5
-
μA
Ω
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
VDS = 40 V, VGS = 0 V, f = 1 MHz
VDS = 40 V, VGS = 10 V, ID = 10 A
VDS = 40 V, VGS = 7.5 V, ID = 10 A
Gate-source charge
Qgs
Gate-drain charge
Qgd
Output charge
Qoss
VDS = 40 V, VGS = 0 V
-
104
-
Gate resistance
Rg
f = 1 MHz
0.4
1.1
1.9
-
18
36
-
10
20
-
28
56
tf
-
12
24
td(on)
-
21
42
-
18
36
-
25
50
-
12
24
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tr
td(off)
VDD = 40 V, RL = 4 Ω, ID ≅ 10 A,
VGEN = 10 V, Rg = 1 Ω
VDD = 40 V, RL = 4 Ω, ID ≅ 10 A,
VGEN = 7.5 V, Rg = 1 Ω
tf
pF
nC
Ω
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
IS = 5 A, VGS = 0 V
IF = 10 A, di/dt = 100 A/μs,
TJ = 25 °C
-
-
94.5
-
-
300
-
0.75
1.1
-
67
134
ns
-
88
176
nC
-
28
-
-
38.8
-
A
V
ns
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S23-1066-Rev. B, 04-Dec-2023
Document Number: 63128
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR582DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
130
10000
150
VGS = 10 V thru 6 V
52
100
1000
90
1st line
2nd line
1000
VGS = 5 V
78
2nd line
ID - Drain Current (A)
120
1st line
2nd line
2nd line
ID - Drain Current (A)
104
60
100
TC = 25 °C
30
26
VGS = 4 V
10
0
0
1
2
3
TC = -55 °C
TC = 125 °C
4
10
0
0
5
1.6
3.2
4.8
6.4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
Axis Title
8
Axis Title
10000
0.0040
10 000
10000
1000
VGS = 10 V
0.0028
100
Coss
1000
1000
1st line
2nd line
VGS = 7.5 V
0.0032
2nd line
C - Capacitance (pF)
0.0036
1st line
2nd line
2nd line
RDS(on) - On-Resistance
(Ω)
Ciss
100
100
Crss
10
0.0024
0
20
40
60
80
10
1
10
0.0020
0
100
16
32
64
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
1st line
2nd line
VDS = 20 V, 40 V, 60 V
100
2
10
0
0
9
18
27
36
45
1.68
VGS = 10 V, 20 A
1000
1.36
1st line
2nd line
1000
2nd line
RDS(on) - On-Resistance (Normalized)
ID = 10 A
6
10000
2.00
8
4
80
Axis Title
10000
10
2nd line
VGS - Gate-to-Source Voltage (V)
48
1.04
VGS = 7.5 V, 20 A
0.72
10
0.40
-50
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S23-1066-Rev. B, 04-Dec-2023
100
Document Number: 63128
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR582DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
0.5
10000
100
2nd line
VGS(th) - Variance (V)
TJ = 150 °C
1
TJ = 25 °C
100
0.1
1000
-0.1
1st line
2nd line
1000
1st line
2nd line
2nd line
IS - Source Current (A)
0.2
10
ID = 5 mA
-0.4
100
ID = 250 μA
-0.7
0.01
10
0
0.2
0.4
0.6
0.8
1.0
10
-1.0
1.2
-50
-25
0
25
50
75
100 125 150
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
Source-Drain Diode Forward Voltage
Threshold Voltage
Axis Title
Axis Title
10000
0.020
10000
1000
800
100
0.004
600
400
100
200
TJ = 25 °C
10
0
0
2
4
1st line
2nd line
TJ = 125 °C
0.008
1000
2nd line
P - Power (W)
1000
0.012
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
ID = 10 A
0.016
6
8
10
0
0.001
10
0.01
0.1
1
10
VGS - Gate-to-Source Voltage (V)
t - Time (s)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
10000
1000
IDM limited
ID limited
1000
100
μs
10
1 ms
Limited by RDS(on)
a
10 ms
1
1st line
2nd line
2nd line
ID - Drain Current (A)
100
100ms
100
1s
0.1
10s
TA = 25 °C,
single pulse
0.01
0.01
BVDSS limited
DC
10
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
Safe Operating Area, Junction-to-Ambient
Note
a. VGS > minimum VGS at which RDS(on) is specified
S23-1066-Rev. B, 04-Dec-2023
Document Number: 63128
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR582DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
150
1000
90
1st line
2nd line
2nd line
ID - Drain Current (A)
120
60
100
30
10
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating a
Axis Title
Axis Title
10000
120
2.0
1st line
2nd line
48
100
24
1000
1.5
1st line
2nd line
1000
72
2nd line
P - Power (W)
96
2nd line
P - Power (W)
10000
2.5
1.0
100
0.5
10
0
0
25
50
75
100
125
150
10
0
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
150
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S23-1066-Rev. B, 04-Dec-2023
Document Number: 63128
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR582DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
Duty cycle = 0.5
Notes
0.2
PDM
0.1
0.1
t1
0.05
t2
t1
1. Duty cycle, D = t
2
2. Per unit base = RthJA = 62.5 °C/W
0.02
3. TJM - TA = PDMZthJA
Single pulse
0.01
0.0001
0.001
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
0.01
100
(t)
4. Surface mounted
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
1
10000
0.2
0.1
1000
0.05
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.02
0.1
Single pulse
100
0.01
0.0001
10
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63128.
S23-1066-Rev. B, 04-Dec-2023
Document Number: 63128
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 01-Jan-2023
1
Document Number: 91000