SiR608DP
www.vishay.com
Vishay Siliconix
N-Channel 45 V (D-S) MOSFET
FEATURES
PowerPAK® SO-8 Single
D
5
D
6
D
7
• TrenchFET® Gen IV power MOSFET
D
8
• 45 V Drain-source break-down voltage
• Tuned for low Qg and Qoss
• 100 % Rg and UIS tested
6.
15
m
m
m
1
5m
5.1
Top View
3
4 S
G
Bottom View
2
S
1
S
APPLICATIONS
D
• Synchronous rectification
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 10 V
RDS(on) max. () at VGS = 4.5 V
Qg typ. (nC)
ID (A) a
Configuration
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
• High power density DC/DC
45
0.00120
0.00180
50.5
208
Single
• Motor drive control
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK SO-8
SiR608DP-T1-RE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
SYMBOL
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 100 μs)
ID
IDM
Continuous source-drain diode current
TC = 25 °C
TA = 25 °C
IS
Single pulse avalanche current
Single pulse avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum power dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
TJ, Tstg
LIMIT
45
+20, -16
208
166
51 b, c
40.8 b, c
400
94.5
5.6 b, c
50
125
104
66.6
6.25 b, c
4 b, c
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
t 10 s
RthJA
15
20
Maximum junction-to-ambient b, f
°C/W
Maximum junction-to-case (drain)
Steady state
RthJC
0.9
1.2
Notes
a. Based on TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 54 °C/W
g. Package limited
S18-0952-Rev. A, 17-Sep-2018
Document Number: 76807
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR608DP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
Static
Drain-source breakdown voltage
VDS
VGS = 0 V, ID = 250 μA
45
-
-
VDS/TJ
ID = 10 mA
-
29
-
VGS(th) temperature coefficient
VGS(th)/TJ
ID = 250 μA
-
-5.8
-
Gate-source threshold voltage
VDS temperature coefficient
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
1.1
-
2.3
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = +20, -16 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
RDS(on)
gfs
VDS = 45 V, VGS = 0 V
-
-
1
VDS = 45 V, VGS = 0 V, TJ = 55 °C
-
-
10
VDS 5 V, VGS = 10 V
50
-
-
VGS = 10 V, ID = 20 A
-
0.00100 0.00120
VGS = 4.5 V, ID = 20 A
-
0.00136 0.00180
VDS = 10 V, ID = 20 A
-
120
-
μA
A
S
Dynamic b
Input capacitance
Ciss
-
8900
-
Output capacitance
Coss
-
1244
-
Reverse transfer capacitance
Crss
-
120
-
-
0.0135
0.0270
-
111
167
-
50.5
76
-
26
-
-
7.8
-
VDS = 20 V, VGS = 0 V, f = 1 MHz
Crss/Ciss ratio
VDS = 20 V, VGS = 10 V, ID = 20 A
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Output charge
Qoss
VDS = 20 V, VGS = 0 V
-
59
-
Gate resistance
Rg
f = 1 MHz
0.3
0.88
1.5
-
19
38
-
10
20
100
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDS = 20 V, VGS = 4.5 V, ID = 20 A
td(on)
tr
td(off)
VDD = 20 V, RL = 1
ID 20 A, VGEN = 10 V, Rg = 1
pF
-
nC
-
50
tf
-
8
16
td(on)
-
52
104
-
86
172
-
50
100
-
25
50
-
-
94.5
-
-
400
-
0.7
1.1
V
-
52
104
ns
-
71
142
nC
-
32
-
-
20
-
tr
td(off)
VDD = 20 V, RL = 1
ID 20 A, VGEN = 4.5 V, Rg = 1
tf
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current (tp = 100 μs)
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
IS = 10 A
IF = 10 A, di/dt = 100 A/μs,
TJ = 25 °C
A
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-0952-Rev. A, 17-Sep-2018
Document Number: 76807
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR608DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
200
10000
350
VGS = 10 V thru 4 V
80
100
VGS = 3 V
1000
210
1st line
2nd line
1000
120
2nd line
ID - Drain Current (A)
280
1st line
2nd line
2nd line
ID - Drain Current (A)
160
140
TC = 25 °C
100
70
40
1
2
3
4
10
0
10
0
0
TC = -55 °C
TC = 125 °C
VGS = 2 V
0
5
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
Axis Title
6
Axis Title
10000
0.0018
10000
10 000
1000
0.0012
100
VGS = 10 V
1000
100
100
Crss
0.0010
20
40
60
80
0
100
9
18
36
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1000
1st line
2nd line
VDS = 10 V, 20 V, 30 V
100
2
10
0
22
44
66
88
110
2nd line
RDS(on) - On-Resistance (Normalized)
ID = 20 A
8
6
10000
2.0
10000
4
45
Axis Title
Axis Title
10
0
27
1.7
VGS = 10 V, 20 A
1000
1.4
1.1
VGS = 4.5 V, 20 A
100
0.8
10
0.5
-50
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S18-0952-Rev. A, 17-Sep-2018
1st line
2nd line
0
10
10
10
0.0008
2nd line
VGS - Gate-to-Source Voltage (V)
1000
Coss
1st line
2nd line
VGS = 4.5 V
0.0014
2nd line
C - Capacitance (pF)
0.0016
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
Ciss
Document Number: 76807
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR608DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
0.005
10000
100
TJ = 150 °C
1
TJ = 25 °C
100
0.1
0.004
1000
0.003
1st line
2nd line
1000
2nd line
RDS(on) - On-Resistance (Ω)
10
1st line
2nd line
2nd line
IS - Source Current (A)
ID = 20 A
TJ = 125 °C
0.002
100
0.001
TJ = 25 °C
0.01
10
0
0.2
0.4
0.6
0.8
1.0
10
0
1.2
0
2
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
Axis Title
10000
0.5
10000
2000
0.2
ID = 5 mA
-0.4
ID = 250 μA
100
-0.7
1000
1200
1st line
2nd line
1000
-0.1
2nd line
P - Power (W)
1600
1st line
2nd line
2nd line
VGS(th) - Variance (V)
4
800
100
400
10
-1.0
-50
-25
0
25
50
75
100 125 150
0
0.0001
10
0.001
0.01
0.1
1
TJ - Junction Temperature (°C)
t - Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
S18-0952-Rev. A, 17-Sep-2018
Document Number: 76807
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR608DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
250
10000
1000
IDM limited
150
100
100
50
ID limited
100 μs
1000
1 ms
10
10 ms
Limited by RDS(on) b
1
100 ms
1s
TA = 25 °C,
single pulse
10
0
25
50
75
100
125
BVDSS limited
0.1
1
10
100
TC - Case Temperature (°C)
VDS - Drain-to-Source Voltage (V)
Current Derating a
Safe Operating Area
Axis Title
Axis Title
10000
125
10000
3.0
2.4
1st line
2nd line
50
100
25
1000
1.8
1st line
2nd line
1000
75
2nd line
P - Power (W)
100
2nd line
P - Power (W)
DC
10
0.01
0.01
150
100
10 s
0.1
0
1st line
2nd line
1000
2nd line
ID - Drain Current (A)
100
1st line
2nd line
2nd line
ID - Drain Current (A)
200
1.2
100
0.6
10
0
0
25
50
75
100
125
150
10
0
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
150
Notes
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
b. VGS > minimum VGS at which RDS(on) is specified
S18-0952-Rev. A, 17-Sep-2018
Document Number: 76807
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR608DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
Duty cycle = 0.5
Notes
0.2
PDM
0.1
0.1
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
t1
t2
t1
1. Duty cycle, D = t
2
2. Per unit base = RthJA = 54 °C/W
0.05
0.02
3. TJM - TA = PDMZthJA
Single pulse
100
(t)
4. Surface mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
1
10000
0.2
0.1
1000
0.05
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.02
0.1
Single pulse
100
0.01
0.0001
10
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76807.
S18-0952-Rev. A, 17-Sep-2018
Document Number: 76807
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8, (Single/Dual)
L
H
E2
K
E4
θ
D4
W
1
M
1
Z
2
D5
D2
e
2
D1
D
2
D
3
4
θ
4
b
3
L1
E3
θ
A1
Backside View of Single Pad
H
K
E2
E4
L
1
D1
D5
2
D2
Detail Z
K1
2
E1
E
D3 (2x) D4
c
A
θ
3
4
Notes
1. Inch will govern.
2 Dimensions exclusive of mold gate burrs.
3. Dimensions exclusive of mold flash and cutting burrs.
DIM.
A
A1
b
c
D
D1
D2
D3
D4
D5
E
E1
E2
E3
E4
e
K
K1
H
L
L1
W
M
b
D2
E3
Backside View of Dual Pad
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
0.97
1.04
0.41
0.28
5.15
4.90
3.76
1.50
0.57 typ.
3.98 typ.
6.15
5.89
3.66
3.78
0.75 typ.
1.27 BSC
1.27 typ.
0.61
0.61
0.13
0.25
0.125 typ.
1.12
0.05
0.51
0.33
5.26
5.00
3.91
1.68
0.038
0
0.013
0.009
0.199
0.189
0.140
0.052
0.044
0.002
0.020
0.013
0.207
0.197
0.154
0.066
6.25
5.99
3.84
3.91
0.238
0.228
0.137
0.145
0.71
0.71
0.20
12°
0.36
0.022
0.020
0.020
0.002
0°
0.006
0.041
0.016
0.011
0.203
0.193
0.148
0.059
0.0225 typ.
0.157 typ.
0.242
0.232
0.144
0.149
0.030 typ.
0.050 BSC
0.050 typ.
0.024
0.024
0.005
0.010
0.005 typ.
0.33
0.23
5.05
4.80
3.56
1.32
6.05
5.79
3.48
3.68
0.56
0.51
0.51
0.06
0°
0.15
0.246
0.236
0.151
0.154
0.028
0.028
0.008
12°
0.014
ECN: S17-0173-Rev. L, 13-Feb-17
DWG: 5881
Revison: 13-Feb-17
1
Document Number: 71655
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single
0.260
(6.61)
0.150
(3.81)
0.050
0.174
(4.42)
0.154
(1.27)
0.026
(0.66)
(3.91)
0.024
(0.61)
0.050
0.032
0.040
(1.27)
(0.82)
(1.02)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72599
Revision: 21-Jan-08
www.vishay.com
15
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 09-Jul-2021
1
Document Number: 91000
