SIR626ADP-T1-RE3

SiR626ADP www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PowerPAK® SO-8 Single D 5 D 6 D 7 • TrenchFET® Gen IV power MOSFET D 8 • Very low RDS - Qg figure-of-merit (FOM) • Tuned for the lowest RDS - Qoss FOM • 100 % Rg and UIS tested 6. 15 m m m 1 5m 5.1 Top View 3 4 S G Bottom View 2 S 1 S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D • Synchronous rectification • Primary side switch PRODUCT SUMMARY VDS (V) • DC/DC converter 60 • Solar micro inverter RDS(on) max. () at VGS = 10 V 0.00175 • Motor drive switch RDS(on) max. () at VGS = 7.5 V 0.00240 RDS(on) max. () at VGS = 6 V 0.00340 Qg typ. (nC) ID (A) Configuration 42.5 G S • Battery and load switch N-Channel MOSFET • Industrial 165 Single ORDERING INFORMATION Package PowerPAK SO-8 Lead (Pb)-free and halogen-free SiR626ADP-T1-RE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 60 Gate-source voltage VGS ± 20 Continuous drain current (TJ = 150 °C) TC = 25 °C 165 TC = 70 °C 132 TA = 25 °C ID Pulsed drain current (t = 100 μs) Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy IDM TC = 25 °C TA = 25 °C L = 0.1 mH IS Maximum power dissipation TC = 70 °C TA = 25 °C Operating junction and storage temperature range A 100 a 5.6 b, c IAS 50 125 mJ 104 PD 66.6 6.25 b, c W 4 b, c TA = 70 °C Soldering recommendations (peak temperature) c 300 EAS TC = 25 °C V 40.4 b, c 32.4 b, c TA = 70 °C UNIT TJ, Tstg -55 to +150 260 °C Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s S19-0848-Rev. A, 07-Oct-2019 Document Number: 77248 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR626ADP www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient a Maximum junction-to-case (drain) t  10 s Steady state SYMBOL RthJA RthJC TYPICAL 15 0.9 MAXIMUM 20 1.2 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER Static Drain-source breakdown voltage VDS temperature coefficient VGS(th) temperature coefficient Gate-source threshold voltage Gate-source leakage SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 μA ID = 1 mA ID = 250 μA VDS = VGS, ID = 250 μA VDS = 0 V, VGS = ± 20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 70 °C VDS  10 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 7.5 V, ID = 20 A 60 2 40 - 32 -7.8 0.00145 0.00190 3.5 100 1 15 0.00175 0.00240 V VGS = 6 V, ID = 20 A - 0.00260 0.00340 gfs VDS = 15 V, ID = 20 A - 84 - Ciss Coss Crss VDS = 30 V, VGS = 0 V, f = 1 MHz 0.3 - 3770 1370 40 55 42.5 16.7 9.2 88.5 0.9 16 10 30 10 20 20 27 12 83 64 1.6 32 20 60 20 40 40 54 24 - 0.7 52 50 25 27 100 300 1.1 104 100 - Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a Dynamic b Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Output charge Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulse diode forward current Body diode voltage Body diode reverse recovery time Body diode reverse recovery charge Reverse recovery fall time Reverse recovery rise time RDS(on) Qg VDS = 30 V, VGS = 10 V, ID = 20 A Qgs Qgd Qoss Rg td(on) tr td(off) tf td(on) tr td(off) tf VDS = 30 V, VGS = 7.5 V, ID = 20 A IS ISM VSD trr Qrr ta tb TC = 25 °C VDS = 30 V, VGS = 0 V f = 1 MHz VDD = 30 V, RL = 1.5 , ID  20 A, VGEN = 10 V, Rg = 1  VDD = 30 V, RL = 1.5 , ID  20 A, VGEN = 7.5 V, Rg = 1  IS = 5 A, VGS = 0 V IF = 20 A, di/dt = 100 A/μs, TJ = 25 °C mV/°C V nA μA A  S pF nC  ns A V ns nC ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing  Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0848-Rev. A, 07-Oct-2019 Document Number: 77248 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR626ADP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 200 10000 200 VGS = 10 V thru 6 V 80 100 1000 120 1st line 2nd line 1000 120 2nd line ID - Drain Current (A) 160 VGS = 5 V 1st line 2nd line 2nd line ID - Drain Current (A) 160 TC = 25 °C 80 100 40 40 1 2 3 4 10 0 10 0 0 TC = -55 °C TC = 125 °C VGS = 4 V thru 0 V 0 5 1.6 3.2 4.8 6.4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title 8.0 Axis Title 10000 0.005 10000 10 000 0.003 0.002 VGS = 10 V 100 Coss 1000 1000 1st line 2nd line 1000 VGS = 6.0 V 2nd line C - Capacitance (pF) 0.004 1st line 2nd line 100 100 Crss 0.001 0 40 80 120 160 10 10 10 0 0 200 12 24 48 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title 1000 1st line 2nd line 4 VDS = 20 V, 30 V, 40 V 100 2 10 0 11 22 33 44 55 2nd line RDS(on) - On-Resistance (Normalized) ID = 20 A 6 10000 2.5 8 0 60 Axis Title 10000 10 2nd line VGS - Gate-to-Source Voltage (V) 36 2.0 VGS = 10 V, 20 A 1000 1.5 VGS = 7.5 V, 20 A 1.0 100 0.5 10 0 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S19-0848-Rev. A, 07-Oct-2019 1st line 2nd line 2nd line RDS(on) - On-Resistance ( ) Ciss Document Number: 77248 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR626ADP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 100 10000 0.6 2nd line VGS(th) - Variance (V) TJ = 150 °C 1 TJ = 25 °C 100 0.1 1000 0 1st line 2nd line 1000 1st line 2nd line 2nd line IS - Source Current (A) 0.3 10 -0.3 ID = 5 mA 100 -0.6 ID = 250 µA -0.9 0.01 0.2 0.4 0.6 0.8 1.0 10 -1.2 10 0 -50 1.2 -25 0 25 50 75 100 125 150 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage Axis Title Axis Title 10000 0.010 10000 500 400 TJ = 125 °C 100 300 1st line 2nd line 0.004 1000 2nd line P - Power (W) 1000 0.006 1st line 2nd line 2nd line RDS(on) - On-Resistance ( ) ID = 20 A 0.008 200 100 0.002 100 TJ = 25 °C 10 10.0 0 4.0 5.2 6.4 7.6 8.8 10 0 0.001 0.01 0.1 1 10 VGS - Gate-to-Source Voltage (V) t - Time (s) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Axis Title 10000 1000 IDM limited 100 µs 1000 ID limited 1 ms 10 10 ms 1 Limited by RDS(on) a 1st line 2nd line 2nd line ID - Drain Current (A) 100 100 ms 100 1s 0.1 10s TA = 25 °C, single pulse 0.01 0.01 BVDSS limited DC 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Note a. VGS > minimum VGS at which RDS(on) is specified S19-0848-Rev. A, 07-Oct-2019 Document Number: 77248 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR626ADP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 200 1000 120 1st line 2nd line 2nd line ID - Drain Current (A) 160 80 100 40 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating a Axis Title Axis Title 10000 125 100 50 100 25 1000 1.8 1st line 2nd line 1000 75 2nd line P - Power (W) 2.4 1st line 2nd line 2nd line P - Power (W) 10000 3.0 1.2 100 0.6 10 0 0 25 50 75 100 125 150 10 0 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S19-0848-Rev. A, 07-Oct-2019 Document Number: 77248 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR626ADP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 Duty cycle = 0.5 Notes 0.2 PDM 0.1 0.1 t1 0.05 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 54 °C/W 0.02 3. TJM - TA = PDMZthJA Single pulse 0.01 0.0001 0.001 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.01 100 (t) 4. Surface mounted 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 0.2 1000 0.1 0.05 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.02 0.1 Single pulse 100 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                    Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77248. S19-0848-Rev. A, 07-Oct-2019 Document Number: 77248 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8, (Single/Dual) L H E2 K E4 θ D4 W 1 M 1 Z 2 D5 D2 e 2 D1 D 2 D 3 4 θ 4 b 3 L1 E3 θ A1 Backside View of Single Pad H K E2 E4 L 1 D1 D5 2 D2 Detail Z K1 2 E1 E D3 (2x) D4 c A θ 3 4 Notes 1. Inch will govern. 2 Dimensions exclusive of mold gate burrs. 3. Dimensions exclusive of mold flash and cutting burrs. DIM. A A1 b c D D1 D2 D3 D4 D5 E E1 E2 E3 E4 e K K1 H L L1  W M b D2 E3 Backside View of Dual Pad MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. 0.97 1.04 0.41 0.28 5.15 4.90 3.76 1.50 0.57 typ. 3.98 typ. 6.15 5.89 3.66 3.78 0.75 typ. 1.27 BSC 1.27 typ. 0.61 0.61 0.13 0.25 0.125 typ. 1.12 0.05 0.51 0.33 5.26 5.00 3.91 1.68 0.038 0 0.013 0.009 0.199 0.189 0.140 0.052 0.044 0.002 0.020 0.013 0.207 0.197 0.154 0.066 6.25 5.99 3.84 3.91 0.238 0.228 0.137 0.145 0.71 0.71 0.20 12° 0.36 0.022 0.020 0.020 0.002 0° 0.006 0.041 0.016 0.011 0.203 0.193 0.148 0.059 0.0225 typ. 0.157 typ. 0.242 0.232 0.144 0.149 0.030 typ. 0.050 BSC 0.050 typ. 0.024 0.024 0.005 0.010 0.005 typ. 0.33 0.23 5.05 4.80 3.56 1.32 6.05 5.79 3.48 3.68 0.56 0.51 0.51 0.06 0° 0.15 0.246 0.236 0.151 0.154 0.028 0.028 0.008 12° 0.014 ECN: S17-0173-Rev. L, 13-Feb-17 DWG: 5881 Revison: 13-Feb-17 1 Document Number: 71655 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72599 Revision: 21-Jan-08 www.vishay.com 15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000