SiR632DP
www.vishay.com
Vishay Siliconix
N-Channel 150 V (D-S) MOSFET
FEATURES
PowerPAK® SO-8 Single
D
5
D
6
D
7
• ThunderFET® technology optimizes balance
of RDS(on), Qg, Qsw and Qoss
D
8
• 100 % Rg and UIS tested
6.
15
m
m
m
1
5m
5.1
Top View
3
4 S
G
Bottom View
2
S
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
1
S
APPLICATIONS
• Fixed telecom
• DC/DC converter
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 10 V
RDS(on) max. () at VGS = 7.5 V
Qg typ. (nC)
ID (A)
Configuration
D
• Primary and secondary side switch
150
0.0345
0.0410
11
29
Single
G
• Battery management
• Synchronous rectification
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK SO-8
SiR632DP-T1-RE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
SYMBOL
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 100 μs)
ID
IDM
Continuous source-drain diode current
TC = 25 °C
TA = 25 °C
IS
Single pulse avalanche current
Single pulse avalanche energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
TC = 70 °C
Maximum power dissipation
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) c
PD
TJ, Tstg
LIMIT
150
± 20
29
23
7.7 b, c
6.2 b, c
50
29
4.5 b, c
25
31.2
69.5
44.5
5 b, c
3.2 b, c
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum junction-to-ambient b
t 10 s
RthJA
20
25
°C/W
1.4
1.8
Maximum junction-to-case (drain)
Steady state
RthJC
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
g. TC = 25 °C.
S16-2644-Rev. A, 26-Dec-16
Document Number: 74886
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR632DP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
Static
Drain-source breakdown voltage
VDS
VGS = 0 V, ID = 250 μA
150
-
-
VDS/TJ
ID = 10 mA
-
129
-
VGS(th) temperature coefficient
VGS(th)/TJ
ID = 250 μA
-
-6.1
-
Gate-source threshold voltage
VDS temperature coefficient
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
2
-
4
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
100
nA
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
RDS(on)
gfs
VDS = 150 V, VGS = 0 V
-
-
1
VDS = 150 V, VGS = 0 V, TJ = 70 °C
-
-
15
VDS 10 V, VGS =10 V
30
-
-
A
VGS =10 V, ID = 10 A
-
0.0285
0.0345
VGS = 7.5 V, ID = 10 A
-
0.0315
0.0410
VDS = 15 V, ID = 10 A
-
18
-
-
740
-
-
145
-
-
8.5
-
-
14
21
-
11
17
-
3.7
-
-
3.9
-
μA
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Output charge
Qoss
VDS = 75 V, VGS = 0 V
-
34
-
Gate resistance
Rg
f = 1 MHz
0.3
1.2
2
-
8
16
-
20
40
-
10
20
tf
-
23
46
td(on)
-
9
18
-
27
54
-
9
18
-
21
42
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDS = 75 V, VGS = 0 V, f = 1 MHz
VDS = 75 V, VGS = 10 V, ID = 10 A
VDS = 75 V, VGS = 7.5 V, ID = 10 A
td(on)
tr
td(off)
tr
td(off)
VDD = 75 V, RL = 7.5 , ID 10 A,
VGEN = 10 V, Rg = 1
VDD = 75 V, RL = 7.5 , ID 10 A,
VGEN = 7.5 V, Rg = 1
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
IS = 5 A, VGS = 0 V
IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C
-
-
29
-
-
50
-
0.79
1.1
V
-
96.5
190
ns
-
270
540
nC
-
91
-
-
5.5
-
A
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-2644-Rev. A, 26-Dec-16
Document Number: 74886
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR632DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
100
60
10000
10000
VGS = 10 V thru 8 V
VGS = 6 V
40
100
VGS = 5 V
20
1000
36
1st line
2nd line
1000
60
2nd line
ID - Drain Current (A)
48
VGS = 7 V
1st line
2nd line
24
12
0
0
10
3
6
9
12
TC = -55 °C
TC = 125 °C
VGS = 4 V
0
10
0
15
2
4
6
8
VDS - Drain-to-Source Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
10
Axis Title
0.1000
1700
10000
10000
1360
VGS = 7.5 V
1000
0.0600
0.0400
100
VGS = 10 V
0.0200
2nd line
C - Capacitance (pF)
0.0800
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
100
TC = 25 °C
1000
1020
1st line
2nd line
2nd line
ID - Drain Current (A)
80
Ciss
680
Coss
100
340
Crss
0.0000
0
10
20
40
60
80
100
10
0
20
40
80
ID - Drain Current (A)
2nd line
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
2.5
ID = 10 A
8
1000
VDS = 50 V, 75 V, 100 V
1st line
2nd line
6
4
100
2
0
10
3
6
9
12
15
2nd line
RDS(on) - On-Resistance (Normalized)
10000
0
100
Axis Title
Axis Title
10
2nd line
VGS - Gate-to-Source Voltage (V)
60
10000
ID = 10 A
VGS = 10 V
2.1
1000
1.7
VGS = 7.5 V
1.3
100
0.9
0.5
10
-50
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
2nd line
TJ - Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S16-2644-Rev. A, 26-Dec-16
1st line
2nd line
0
Document Number: 74886
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR632DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10000
0.5
2nd line
VGS(th) - Variance (V)
0.1
1000
1
TJ = 25 °C
0.1
100
1000
ID = 5 mA
-0.3
1st line
2nd line
TJ = 150 °C
1st line
2nd line
2nd line
IS - Source Current (A)
10
10000
-0.7
ID = 250 μA
0.01
100
-1.1
0.001
10
0
0.2
0.4
0.6
0.8
1.0
-1.5
1.2
-50
-25
0
25
50
75 100 125 150
TJ - Temperature (°C)
2nd line
VSD - Source-to-Drain Voltage (V)
2nd line
Source-Drain Diode Forward Voltage
Threshold Voltage
Axis Title
Axis Title
0.15
300
10000
10000
0.12
240
1000
2nd line
Power (W)
1000
TJ = 125 °C
0.06
180
1st line
2nd line
0.09
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
ID = 10 A
120
100
100
0.03
60
TJ = 25 °C
0
0
0.001
10
0
2
4
6
8
10
10
0.01
0.1
1
10
VGS - Gate-to-Source Voltage (V)
2nd line
Time (s)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
100
10000
IDM limited
100 μs
ID limited
1 ms
1000
1
10 ms
Limited by RDS(on) (1)
100 ms
1s
0.1
1st line
2nd line
2nd line
ID - Drain Current (A)
10
100
10
s
DC
0.01
TA = 25 °C
Single pulse
0.001
0.01
(1)
BVDSS limited
10
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S16-2644-Rev. A, 26-Dec-16
Document Number: 74886
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR632DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
35
10000
1000
21
1st line
2nd line
2nd line
ID - Drain Current (A)
28
14
100
7
0
10
0
25
50
75
100
125
150
TC - Case Temperature (°C)
2nd line
Current Derating a
Axis Title
Axis Title
90
10000
2.5
72
10000
2.0
1.5
1st line
2nd line
36
2nd line
Power (W)
1000
1st line
2nd line
2nd line
Power (W)
1000
54
1.0
100
18
100
0.5
0
10
0
25
50
75
100
125
150
0
10
0
25
50
75
100
125
TC - Case Temperature (°C)
2nd line
TA - Ambient Temperature (°C)
2nd line
Power, Junction-to-Case
Power, Junction-to-Ambient
150
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-2644-Rev. A, 26-Dec-16
Document Number: 74886
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR632DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
Duty Cycle = 0.5
Notes:
0.2
PDM
0.1
0.1
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
t1
0.05
t2
t
1. Duty cycle, D = t1
2
2. Per unit base = RthJA = 70 °C/W
0.02
Single pulse
3. TJM - TA = PDMZthJA
100
(t)
4. Surface mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
10000
1
0.2
0.1
1000
0.05
0.1
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.02
100
Single pulse
0.01
0.0001
10
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74886.
S16-2644-Rev. A, 26-Dec-16
Document Number: 74886
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8, (Single/Dual)
L
H
E2
K
E4
θ
D4
W
1
M
1
Z
2
D5
D2
e
2
D1
D
2
D
3
4
θ
4
b
3
L1
E3
θ
A1
Backside View of Single Pad
H
K
E2
E4
L
1
D1
D5
2
D2
Detail Z
K1
2
E1
E
D3 (2x) D4
c
A
θ
3
4
Notes
1. Inch will govern.
2 Dimensions exclusive of mold gate burrs.
3. Dimensions exclusive of mold flash and cutting burrs.
DIM.
A
A1
b
c
D
D1
D2
D3
D4
D5
E
E1
E2
E3
E4
e
K
K1
H
L
L1
W
M
b
D2
E3
Backside View of Dual Pad
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
0.97
1.04
0.41
0.28
5.15
4.90
3.76
1.50
0.57 typ.
3.98 typ.
6.15
5.89
3.66
3.78
0.75 typ.
1.27 BSC
1.27 typ.
0.61
0.61
0.13
0.25
0.125 typ.
1.12
0.05
0.51
0.33
5.26
5.00
3.91
1.68
0.038
0
0.013
0.009
0.199
0.189
0.140
0.052
0.044
0.002
0.020
0.013
0.207
0.197
0.154
0.066
6.25
5.99
3.84
3.91
0.238
0.228
0.137
0.145
0.71
0.71
0.20
12°
0.36
0.022
0.020
0.020
0.002
0°
0.006
0.041
0.016
0.011
0.203
0.193
0.148
0.059
0.0225 typ.
0.157 typ.
0.242
0.232
0.144
0.149
0.030 typ.
0.050 BSC
0.050 typ.
0.024
0.024
0.005
0.010
0.005 typ.
0.33
0.23
5.05
4.80
3.56
1.32
6.05
5.79
3.48
3.68
0.56
0.51
0.51
0.06
0°
0.15
0.246
0.236
0.151
0.154
0.028
0.028
0.008
12°
0.014
ECN: S17-0173-Rev. L, 13-Feb-17
DWG: 5881
Revison: 13-Feb-17
1
Document Number: 71655
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single
0.260
(6.61)
0.150
(3.81)
0.050
0.174
(4.42)
0.154
(1.27)
0.026
(0.66)
(3.91)
0.024
(0.61)
0.050
0.032
0.040
(1.27)
(0.82)
(1.02)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72599
Revision: 21-Jan-08
www.vishay.com
15
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 01-Jan-2022
1
Document Number: 91000