SIR640DP-T1-GE3

SiR640DP Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 40 0.0017 at VGS = 10 V 60 0.0022 at VGS = 4.5 V 60 Qg (Typ.) 34.6 nC PowerPAK® SO-8 • TrenchFET® Power MOSFET • Low Qg for High Efficiency • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS S 6.15 mm 5.15 mm 1 • Synchronous Rectification • DC/DC Converter S 2 S 3 D G 4 D 8 D 7 G D 6 D 5 Bottom View Ordering Information: SiR640DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 TC = 70 °C TA = 25 °C 60a ID 45b, c 36b, c TA = 70 °C IDM Pulsed Drain Current (t = 100 µs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L =0.1 mH TC = 70 °C TA = 25 °C 60a IS 5.6b, c IAS 40 EAS mJ 80 104 66.6 PD W 6.25b, c 4b, c TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A 350 TC = 25 °C Maximum Power Dissipation V 60a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit - 55 to 150 Soldering Recommendations (Peak Temperature)d, e °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) Symbol Typical Maximum t  10 s RthJA 15 20 Steady State RthJC 0.9 1.2 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 54 °C/W. Document Number: 67190 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-0830-Rev. B, 22-Apr-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR640DP Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 40 Typ. Max. Unit Static Drain-Source Breakdown Voltage VGS(th) Temperature Coefficient VGS(th)/TJ ID = 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) gfs Forward Transconductancea V - 5.3 mV/°C 2.3 V VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 55 °C 10 VDS 5 V, VGS = 10 V 1 30 µA A VGS = 10 V, ID = 20 A 0.0014 0.0017 VGS = 4.5 V, ID = 20 A 0.0018 0.0022 VDS = 15 V, ID = 20 A 110 VDS = 20 V, VGS = 0 V, f = 1 MHz 3810  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Rg Gate Resistance 4930 314 VDS = 20 V, VGS = 10 V, ID = 20 A VDS = 20 V, VGS = 4.5 V, ID = 20 A tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time f = 1 MHz VDD = 20 V, RL = 2  ID  10 A, VGEN = 10 V, Rg = 1  11 0.4 1.3 2.6 19 35 11 20 50 90 20 td(on) 46 90 88 170 56 110 25 50 VDD = 20 V, RL = 2  ID  10 A, VGEN = 4.5 V, Rg = 1  tf Fall Time 52 10 td(off) Turn-Off Delay Time 113 tf tr Rise Time 75 34.6 nC 8.2 td(on) Turn-On Delay Time pF  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current (t = 100 µs) ISM Body Diode Voltage VSD TC = 25 °C 60 350 IS = 5 A 0.69 1.1 A V Body Diode Reverse Recovery Time trr 83 160 ns Body Diode Reverse Recovery Charge Qrr 77 150 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 26 57 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 67190 S13-0830-Rev. B, 22-Apr-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 2 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR640DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 10 V GS = 10 V thru 3 V 8 ID - Drain Current (A) ID - Drain Current (A) 64 48 32 16 6 4 T C = 25 °C 2 T C = 125 °C V GS = 2 V 0 0.0 T C = - 55 °C 0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) 2.5 0 1 Output Characteristics 3 4 5 Transfer Characteristics 0.0022 8000 0.0020 6400 Coss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 2 VGS - Gate-to-Source Voltage (V) V GS = 4.5 V 0.0018 0.0016 V GS = 10 V Ciss 4800 3200 1600 0.0014 Crss 0 0.0012 0 16 32 48 ID - Drain Current (A) 64 0 80 8 16 24 32 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 2.0 RDS(on) - On-Resistance (Normalized) ID = 20 A VGS - Gate-to-Source Voltage (V) 40 8 V DS = 20 V 6 V DS = 10 V V DS = 30 V 4 2 0 0 16 32 48 64 Qg - Total Gate Charge (nC) Gate Charge Document Number: 67190 S13-0830-Rev. B, 22-Apr-13 80 ID = 20 A 1.7 1.4 V GS = 10 V 1.1 V GS = 4.5 V 0.8 0.5 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR640DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.015 ID = 20 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 T J = 150 °C 1 T J = 25 °C 0.1 0.012 0.009 0.006 0.003 0.01 T J = 25 °C 0.000 0.001 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 0 Source-Drain Diode Forward Voltage 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage 0.5 200 0.2 160 - 0.1 120 ID = 5 mA - 0.4 Power (W) VGS(th) Variance (V) T J = 125 °C 80 ID = 250 μA - 0.7 - 1.0 - 50 40 - 25 0 25 50 75 100 125 150 0 0.001 TJ - Temperature (°C) 0.01 0.1 Time (s) 1 10 Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 IDM Limited ID - Drain Current (A) 100 100 μs ID Limited 1 ms 10 10 ms 1 Limited by RDS(on)* 100 ms 1s 0.1 10 s TA = 25 °C Single Pulse 0.01 0.01 BVDSS Limited DC 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 67190 S13-0830-Rev. B, 22-Apr-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 4 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR640DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 200 ID - Drain Current (A) 160 120 80 Package Limited 40 0 0 25 50 75 100 TC - Case Temperature (°C) 125 150 125 3.0 100 2.4 75 1.8 Power (W) Power (W) Current Derating* 50 1.2 0.6 25 0.0 0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 TA - Ambient Temperature (°C) 150 Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 67190 S13-0830-Rev. B, 22-Apr-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR640DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 54 °C/W 0.02 3. T JM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 10 -2 4. Surface Mounted 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67190. Document Number: 67190 S13-0830-Rev. B, 22-Apr-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 6 This document is subject to change without notice. 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