SIR664DP-T1-GE3

SiR664DP Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) 0.0060 at VGS = 10 V 60a 0.0075 at VGS = 6 V 60a 0.0095 at VGS = 4.5 V 54 60 Qg (Typ.) 12 nC APPLICATIONS PowerPAK® SO-8 S 6.15 mm • Primary Side Switching • Synchronous Rectification • DC/DC Converters • Boost Converters 5.15 mm 1 S 2 • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 S 3 G • DC/AC Inverters 4 D G D 8 D 7 D 6 S D 5 Bottom View N-Channel MOSFET Ordering Information: SiR664DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current (t = 100 µs) TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L =0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Continuous Source-Drain Diode Current Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg Limit 60 ± 20 Unit V 60a 54 21.5b, c 17.2b, c 150 A 60a 4.5b, c 20 20 50 32 5b, c 3.2b, c - 55 to 150 260 mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA t  10 s 20 25 Maximum Junction-to-Ambientb, f °C/W RthJC Steady State Maximum Junction-to-Case (Drain) 2 2.5 Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 70 °C/W. Document Number: 62849 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-1160-Rev. A, 13-May-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR664DP Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 60 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ V 103 ID = 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS 5 V, VGS = 10 V - 5.5 1.3 30 µA A VGS = 10 V, ID = 20 A 0.0050 0.0060 VGS = 6 V, ID = 15 A 0.0060 0.0075 VGS = 4.5 V, ID = 10 A 0.0073 0.0095 VDS = 10 V, ID = 20 A 70  S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs 1750 VDS = 30 V, VGS = 0 V, f = 1 MHz 60 VDS = 30 V, VGS = 10 V, ID = 10 A 26 40 VDS = 30 V, VGS = 6 V, ID = 10 A 16 24 12 18 VDS = 30 V, VGS = 4.5 V, ID = 10 A Gate-Drain Charge Qgd Output Charge Qoss VDS = 30 V, VGS = 0 V Rg f = 1 MHz Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(off) 5 VDD = 30 V, RL = 3  ID  10 A, VGEN = 10 V, Rg = 1  29 0.5 45 1.7 3 10 20 12 24 24 48 tf 7 14 td(on) 34 68 95 190 20 40 8 16 tr td(off) nC 3.2 td(on) tr pF 720 VDD = 30 V, RL = 3  ID  10 A, VGEN = 4.5 V, Rg = 1  tf  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current (tp = 100 µs) ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 60 150 IS = 5 A IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.76 1.1 V 29 55 ns 19 35 nC 14 15 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 62849 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-1160-Rev. A, 13-May-13 2 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR664DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 150 VGS = 10 V thru 5 V 80 ID - Drain Current (A) ID - Drain Current (A) 120 VGS = 4 V 90 60 TC = 25 °C 40 20 30 TC = 125 °C VGS = 3 V VGS = 2 V 0 0 1 2 3 4 TC = - 55 °C 0 0.0 5 1.0 2.0 3.0 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5.0 2000 0.0100 0.0090 Ciss 1600 VGS = 4.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 60 0.0080 0.0070 VGS = 6.0 V 0.0060 VGS = 10 V 1200 Coss 800 400 0.0050 Crss 0 0.0040 0 20 40 60 80 0 100 12 ID - Drain Current (A) 24 36 48 60 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 2.0 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 10 A VDS = 30 V 6 VDS = 20 V VDS = 40 V 4 2 0 ID = 20 A VGS = 10 V 1.7 1.4 VGS = 4.5 V 1.1 0.8 0.5 0 6 12 18 24 30 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 62849 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-1160-Rev. A, 13-May-13 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR664DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.025 ID = 20 A 0.020 TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 0.001 0.015 TJ = 125 °C 0.010 0.005 TJ = 25 °C 0.000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 6 8 10 On-Resistance vs. Gate-to-Source Voltage 0.5 350 0.2 280 - 0.1 210 Power (W) VGS(th) - Variance (V) 4 VGS - Gate-to-Source Voltage (V) ID = 5 mA - 0.4 140 ID = 250 μA 70 - 0.7 - 1.0 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 IDM Limited ID - Drain Current (A) 100 ID Limited 100 us 10 1 ms 1 10 ms Limited by RDS(on)* 100 ms 0.1 1s TA = 25 °C Single Pulse 0.01 0.01 10 s BVDSS Limited DC 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 62849 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-1160-Rev. A, 13-May-13 4 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR664DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 75 ID - Drain Current (A) 60 Package Limited 45 30 15 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 60 2.5 48 2.0 36 1.5 Power (W) Power (W) Current Derating* 24 12 1.0 0.5 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 62849 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-1160-Rev. A, 13-May-13 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR664DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 t2 1. Duty Cycle, D = 0.05 2. Per Unit Base = R thJA = 70 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 t1 t2 0.001 0.01 4. Surface Mounted 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62849. Document Number: 62849 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-1160-Rev. A, 13-May-13 6 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8, (Single/Dual) L H E2 K E4 θ D4 W 1 M 1 Z 2 D5 D2 e 2 D1 D 2 D 3 4 θ 4 b 3 L1 E3 θ A1 Backside View of Single Pad H K E2 E4 L 1 D1 D5 2 D2 Detail Z K1 2 E1 E D3 (2x) D4 c A θ 3 4 Notes 1. Inch will govern. 2 Dimensions exclusive of mold gate burrs. 3. Dimensions exclusive of mold flash and cutting burrs. E3 Backside View of Dual Pad MILLIMETERS DIM. MIN. A 0.97 A1 b 0.33 c 0.23 D 5.05 D1 4.80 D2 3.56 D3 1.32 D4 D5 E 6.05 E1 5.79 E2 (for AL product) 3.30 E2 (for other product) 3.48 E3 3.68 E4 (for AL product) E4 (for other product) e K (for AL product) K (for other product) K1 0.56 H 0.51 L 0.51 L1 0.06  0° W 0.15 M ECN: C13-0702-Rev. K, 20-May-13 DWG: 5881 Revison: 20-May-13 b D2 INCHES NOM. MAX. MIN. NOM. MAX. 1.04 0.41 0.28 5.15 4.90 3.76 1.50 0.57 typ. 3.98 typ. 6.15 5.89 3.48 3.66 3.78 0.58 typ. 0.75 typ. 1.27 BSC 1.45 typ. 1.27 typ. 0.61 0.61 0.13 0.25 0.125 typ. 1.12 0.05 0.51 0.33 5.26 5.00 3.91 1.68 0.038 0 0.013 0.009 0.199 0.189 0.140 0.052 0.044 0.002 0.020 0.013 0.207 0.197 0.154 0.066 6.25 5.99 3.66 3.84 3.91 0.238 0.228 0.130 0.137 0.145 0.71 0.71 0.20 12° 0.36 0.022 0.020 0.020 0.002 0° 0.006 0.041 0.016 0.011 0.203 0.193 0.148 0.059 0.0225 typ. 0.157 typ. 0.242 0.232 0.137 0.144 0.149 0.023 typ. 0.030 typ. 0.050 BSC 0.057 typ. 0.050 typ. 0.024 0.024 0.005 0.010 0.005 typ. 1 0.246 0.236 0.144 0.151 0.154 0.028 0.028 0.008 12° 0.014 Document Number: 71655 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72599 Revision: 21-Jan-08 www.vishay.com 15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000