SIR670DP-T1-GE3

SiR670DP Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) 0.0048 at VGS = 10 V 60a 0.0060 at VGS = 6 V 60a 60 0.0078 at VGS = 4.5 V 60 Qg (Typ.) 18.5 nC a APPLICATIONS PowerPAK® SO-8 S 6.15 mm • Primary Side Switching • Synchronous Rectification • DC/DC Converters • Boost Converters 5.15 mm 1 S 2 • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 S 3 G D • DC/AC Inverters 4 G D 8 D 7 D 6 S D 5 Bottom View N-Channel MOSFET Ordering Information: SiR670DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Limit 60 ± 20 TC = 70 °C TA = 25 °C 60a ID 24b, c 19.2b, c 200 TA = 70 °C IDM Pulsed Drain Current (t = 100 µs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation TC = 25 °C TA = 25 °C L =0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C A 60a IS 4.5b, c 25 31.2 56.8 36.3 IAS EAS PD mJ W 5b, c 3.2b, c - 55 to 150 260 TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range V 60a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) Symbol RthJA Typical Maximum t  10 s 20 25 Steady State RthJC 1.8 2.2 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 65 °C/W. Document Number: 62863 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-1384-Rev. A, 17-Jun-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR670DP Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 60 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ V 86 ID = 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.8 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS 5 V, VGS = 10 V - 5.5 1.5 30 µA A VGS = 10 V, ID = 20 A 0.0039 0.0048 VGS = 6 V, ID = 15 A 0.0047 0.0060 VGS = 4.5 V, ID = 10 A 0.0060 0.0078 VDS = 10 V, ID = 20 A 60 VDS = 30 V, VGS = 0 V, f = 1 MHz 1050  S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs 2815 VDS = 30 V, VGS = 10 V, ID = 10 A 42 63 VDS = 30 V, VGS = 6 V, ID = 10 A 25 38 18.5 28 VDS = 30 V, VGS = 4.5 V, ID = 10 A 8 43.5 Gate-Drain Charge Qgd Output Charge Qoss VDS = 30 V, VGS = 0 V Rg f = 1 MHz Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(off) VDD = 30 V, RL = 3  ID  10 A, VGEN = 10 V, Rg = 1  0.5 66 1.8 3 19 38 8 16 31 60 tf 7 14 td(on) 42 80 81 150 28 50 8 16 tr td(off) nC 5 td(on) tr pF 90 VDD = 30 V, RL = 3  ID  10 A, VGEN = 4.5 V, Rg = 1  tf  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current (tp = 100 µs) ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 60 200 IS = 5 A IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.78 1.1 V 40 80 ns 37 74 nC 18 22 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 62863 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-1384-Rev. A, 17-Jun-13 2 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR670DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 120 150 VGS = 10 V thru 5 V 100 ID - Drain Current (A) ID - Drain Current (A) 120 90 VGS = 4 V 60 30 80 60 TC = 25 °C 40 20 VGS = 3 V VGS = 2 V 0 0 1 1 2 2 TC = 125 °C TC = - 55 °C 0 3 0.0 1.0 VDS - Drain-to-Source Voltage (V) 2.0 3.0 4.0 5.0 6.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0120 3500 0.0100 2800 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss 0.0080 VGS = 4.5 V 0.0060 VGS = 6.0 V Coss 2100 1400 700 0.0040 Crss VGS = 10 V 0 0.0020 0 0 20 40 60 80 12 24 36 48 VDS - Drain-to-Source Voltage (V) 100 60 ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 2.0 10 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 10 A 8 VDS = 30 V 6 VDS = 20 V VDS = 40 V 4 2 ID = 20 A VGS = 10 V 1.7 1.4 1.1 VGS = 4.5 V 0.8 0.5 0 0 9 18 27 Qg - Total Gate Charge (nC) 36 45 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 62863 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-1384-Rev. A, 17-Jun-13 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR670DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.025 ID = 20 A 0.020 TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 0.015 0.010 TJ = 125 °C 0.005 TJ = 25 °C 0.001 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 350 0.2 280 - 0.1 210 ID = 5 mA - 0.4 - 0.7 - 1.0 - 25 0 25 50 140 70 ID = 250 μA - 50 2 VSD - Source-to-Drain Voltage (V) Power (W) VGS(th) - Variance (V) 0.0 75 100 125 150 0 0.001 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 IDM Limited ID - Drain Current (A) 100 ID Limited 100 us 10 1 ms 10 ms 1 Limited by RDS(on)* 100 ms 1s 0.1 10 s TA = 25 °C Single Pulse 0.01 0.01 DC BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 62863 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-1384-Rev. A, 17-Jun-13 4 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR670DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 ID - Drain Current (A) 80 60 Package Limited 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 70 2.5 56 2.0 Power (W) Power (W) Current Derating* 42 1.5 28 1.0 14 0.5 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 62863 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-1384-Rev. A, 17-Jun-13 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR670DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 t2 1. Duty Cycle, D = 0.05 2. Per Unit Base = R thJA = 65 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 t1 t2 0.001 0.01 4. Surface Mounted 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62863. Document Number: 62863 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-1384-Rev. A, 17-Jun-13 6 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8, (Single/Dual) L H E2 K E4 θ D4 W 1 M 1 Z 2 D5 D2 e 2 D1 D 2 D 3 4 θ 4 b 3 L1 E3 θ A1 Backside View of Single Pad H K E2 E4 L 1 D1 D5 2 D2 Detail Z K1 2 E1 E D3 (2x) D4 c A θ 3 4 Notes 1. Inch will govern. 2 Dimensions exclusive of mold gate burrs. 3. Dimensions exclusive of mold flash and cutting burrs. E3 Backside View of Dual Pad MILLIMETERS DIM. MIN. A 0.97 A1 b 0.33 c 0.23 D 5.05 D1 4.80 D2 3.56 D3 1.32 D4 D5 E 6.05 E1 5.79 E2 (for AL product) 3.30 E2 (for other product) 3.48 E3 3.68 E4 (for AL product) E4 (for other product) e K (for AL product) K (for other product) K1 0.56 H 0.51 L 0.51 L1 0.06  0° W 0.15 M ECN: C13-0702-Rev. K, 20-May-13 DWG: 5881 Revison: 20-May-13 b D2 INCHES NOM. MAX. MIN. NOM. MAX. 1.04 0.41 0.28 5.15 4.90 3.76 1.50 0.57 typ. 3.98 typ. 6.15 5.89 3.48 3.66 3.78 0.58 typ. 0.75 typ. 1.27 BSC 1.45 typ. 1.27 typ. 0.61 0.61 0.13 0.25 0.125 typ. 1.12 0.05 0.51 0.33 5.26 5.00 3.91 1.68 0.038 0 0.013 0.009 0.199 0.189 0.140 0.052 0.044 0.002 0.020 0.013 0.207 0.197 0.154 0.066 6.25 5.99 3.66 3.84 3.91 0.238 0.228 0.130 0.137 0.145 0.71 0.71 0.20 12° 0.36 0.022 0.020 0.020 0.002 0° 0.006 0.041 0.016 0.011 0.203 0.193 0.148 0.059 0.0225 typ. 0.157 typ. 0.242 0.232 0.137 0.144 0.149 0.023 typ. 0.030 typ. 0.050 BSC 0.057 typ. 0.050 typ. 0.024 0.024 0.005 0.010 0.005 typ. 1 0.246 0.236 0.144 0.151 0.154 0.028 0.028 0.008 12° 0.014 Document Number: 71655 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72599 Revision: 21-Jan-08 www.vishay.com 15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000