SIR838DP-T1-GE3

SiR838DP Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 150 0.033 at VGS = 10 V 35 33 nC • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® SO-8 APPLICATIONS S 6.15 mm 1 • Isolated DC/DC Converters S 2 D • Primary Side Switch 5.15 mm S 3 G 4 G D 8 D 7 D 6 D 5 S Bottom View N-Channel MOSFET Ordering Information: SiR838DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e PD TJ, Tstg Limit 150 ± 20 35 28 8.3b, c 6.6b, c 60 60a 4.5b, c 30 45 96 62 5.4b, c 3.5b, c -55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA t  10 s 18 23 Maximum Junction-to-Ambientb, f °C/W RthJC Maximum Junction-to-Case (Drain) Steady State 1 1.3 Notes: a. Package limited b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 65 °C/W. Document Number: 65650 S13-2092-Rev. B, 30-Sep-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR838DP Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 150 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS , ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea V 175 mV/°C -9 2 4 V ± 100 nA VDS = 150 V, VGS = 0 V 1 VDS = 150 V, VGS = 0 V, TJ = 55 °C 10 VDS 5 V, VGS = 10 V 30 µA A RDS(on) VGS 10 V, ID = 8.3 A 0.0275 gfs VDS = 15 V, ID = 8.3 A 28 0.0330  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Rg Gate Resistance 2075 VDS = 75 V, VGS = 0 V, f = 1 MHz tr Rise Time td(off) Turn-Off Delay Time 33 50 14 VDS = 75 V, VGS = 10 V, ID = 8.3 A nC 4 f = 1 MHz VDD = 75 V, RL = 11.5  ID  6.6 A, VGEN = 10 V, Rg = 1  tf Fall Time pF 45 td(on) Turn-On Delay Time 155 0.3 1.4 2.8 16 25 11 17 23 35 10 15  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C 60 60 IS = 6.6 A, VGS 0 V 0.8 1.2 A V Body Diode Reverse Recovery Time trr 77 116 ns Body Diode Reverse Recovery Charge Qrr 260 390 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 6.6 A, dI/dt = 100 A/µs, TJ = 25 °C 60 17 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: pmostechsupport@vishay.com Document Number: 65650 S13-2092-Rev. B, 30-Sep-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR838DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 1.5 1.2 VGS = 6 V 45 I D - Drain Current (A) I D - Drain Current (A) VGS = 10 V thru 7 V 30 15 VGS = 5 V 0.9 0.6 TC = 25 °C 0.3 TC = 125 °C 0 0 1 2 3 4 TC = - 55 °C 0.0 0.0 5 1.5 3.0 4.5 6.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.040 2500 2000 0.035 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss VGS = 10 V 0.030 1500 1000 0.025 500 Coss Crss 0.020 0 0 15 30 45 60 0 30 60 120 150 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 10 2.5 ID = 8.3 A ID = 8.3 A VDS = 75 V 8 2.1 VDS = 38 V 6 VDS = 120 V 4 2 VGS = 10 V (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 90 1.7 1.3 0.9 0 0 7 14 21 Qg - Total Gate Charge (nC) Gate Charge Document Number: 65650 S13-2092-Rev. B, 30-Sep-13 28 35 0.5 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR838DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.10 0.08 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 100 TJ = 150 °C 10 TJ = 25 °C 1 TJ = 125 °C 0.06 0.04 TJ = 25 °C 0.02 0.00 4.0 0.1 0.0 0.3 0.6 0.9 1.2 5.5 7.0 8.5 10.0 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 4.0 150 3.5 120 3.0 Power (W) VGS(th) (V) ID = 250 µA 2.5 2.0 1.5 - 50 90 60 30 - 25 0 25 50 75 100 125 0 0.01 150 0.1 TJ - Temperature (°C) 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* I D - Drain Current (A) 100 µs 10 1 ms 10 ms 1 100 ms 0.1 1s TA = 25 °C Single Pulse 0.01 0.1 10 s BVDSS Limited DC 1 10 1000 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 For technical questions, contact: pmostechsupport@vishay.com Document Number: 65650 S13-2092-Rev. B, 30-Sep-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR838DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) I D - Drain Current (A) 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 120 2.5 2.0 Power (W) Power (W) 90 60 1.5 1.0 30 0.5 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65650 S13-2092-Rev. B, 30-Sep-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR838DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 65 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65650. www.vishay.com 6 For technical questions, contact: pmostechsupport@vishay.com Document Number: 65650 S13-2092-Rev. B, 30-Sep-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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