SIR874DP-T1-GE3

New Product SiR874DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0094 at VGS = 10 V 20 0.012 at VGS = 4.5 V 20 VDS (V) 25 Qg (Typ.) 8 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 S 2 G D • Notebook CPU Core - High-Side Switch • Game Machine DC/DC High-Side • Server DC/DC High-Side D D 6 D APPLICATIONS 4 7 Rectifier S 3 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • Optimized for High-Side Synchronous Operation • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/96/EC D 5 G Bottom View Ordering Information: SiR874DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit 25 ± 20 20g 20g 15b, c 12b, c ID IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Unit V A 50 20g 3.2b, c 20 20 29.8 19.0 3.9b, c 2.5b, c mJ W - 55 to 150 260 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 27 3.5 Maximum 32 4.2 Unit °C/W Notes: a. Base on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 70 °C/W. g. Packaged Limited. Document Number: 64813 S09-0663-Rev. A, 20-Apr-09 www.vishay.com 1 New Product SiR874DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 25 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ V 34 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.2 V IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 25 V, VGS = 0 V 1 VDS = 25 V, VGS = 0 V, TJ = 55 °C 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea VDS ≥ 5 V, VGS = 10 V RDS(on) gfs - 4.7 1.1 30 µA A VGS = 10 V, ID = 10 A 0.0075 0.0094 VGS = 4.5 V, ID = 7 A 0.010 0.012 VDS = 15 V, ID = 10 A 30 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 985 VDS = 15 V, VGS = 0 V, f = 1 MHz pF 205 76 VDS = 15 V, VGS = 10 V, ID = 10 A VDS = 15 V, VGS = 4.5 V, ID = 10 A 18 27 8 12 2.4 nC 2.3 f = 1 MHz td(on) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω tr td(off) 0.3 1.3 2.6 14 25 12 24 19 35 tf 9 18 td(on) 8 16 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tr td(off) tf 10 20 16 30 9 18 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD 20 50 IS = 3 A 0.76 1.1 A V Body Diode Reverse Recovery Time trr 14 28 ns Body Diode Reverse Recovery Charge Qrr 5 10 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 8 6 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 64813 S09-0663-Rev. A, 20-Apr-09 New Product SiR874DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 8.0 VGS = 10 V thru 4 V 6.4 I D - Drain Current (A) I D - Drain Current (A) 40 30 VGS = 3 V 20 4.8 3.2 TC = 25 °C TC = 125 °C 10 1.6 0 0.0 TC = - 55 °C 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.015 1300 0.013 1040 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V 0.011 0.009 VGS = 10 V 780 520 Coss 260 0.007 Crss 0 0.0 0.005 0 10 20 30 40 50 4.8 7.2 9.6 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance ID = 10 A ID = 10 A 1.6 VDS = 20 V 6 VDS = 10 V VDS = 15 V 4 2 VGS = 10 V 1.4 (Normalized) R DS(on) - On-Resistance 8 0 0.0 12.0 1.8 10 VGS - Gate-to-Source Voltage (V) 2.4 1.2 VGS = 4.5 V 1.0 0.8 3.7 7.4 11.1 Qg - Total Gate Charge (nC) Gate Charge Document Number: 64813 S09-0663-Rev. A, 20-Apr-09 14.8 18.5 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SiR874DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.05 100 TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 0.04 0.03 0.02 TJ = 125 °C 0.01 TJ = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 3 4 5 6 7 8 9 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 10 80 0.2 64 0.0 - 0.2 Power (W) VGS(th) Variance (V) 1 ID = 5 mA 48 32 - 0.4 ID = 250 µA 16 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 I D - Drain Current (A) Limited by RDS(on)* 10 1 ms 10 ms 1 100 ms TA = 25 °C Single Pulse 1s 10 s 0.1 DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 64813 S09-0663-Rev. A, 20-Apr-09 New Product SiR874DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 46.0 I D - Drain Current (A) 36.8 27.6 Package Limited 18.4 9.2 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 36.0 2.20 28.8 1.76 21.6 1.32 Power (W) Power (W) Current Derating* 14.4 7.2 0.88 0.44 0.0 0.00 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Case 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 64813 S09-0663-Rev. A, 20-Apr-09 www.vishay.com 5 New Product SiR874DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70 °C/W 3. TJM -- TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64813. www.vishay.com 6 Document Number: 64813 S09-0663-Rev. A, 20-Apr-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000