SIR876DP-T1-GE3

SiR876DP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 100 0.0108 at VGS = 10 V 40 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 Qg (Typ.) 16.9 nC PowerPAK® SO-8 APPLICATIONS S 6.15 mm • DC/DC Primary Side Switch • Telecom/Server 48 V, Full/Half-Bridge dc-to-dc • Industrial D 5.15 mm 1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC S 2 S 3 G 4 D 8 D 7 G D 6 D 5 Bottom View S N-Channel MOSFET Ordering Information: SiR876DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Continuous Source-Drain Diode Current Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg Limit 100 ± 20 Unit V 40a 40a 15.2b, c 12.1b, c 80 A 40a 4.5b, c 25 31.2 62.5 40 5.0b, c 3.2b, c - 55 to 150 260 mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA t ≤ 10 s 20 25 Maximum Junction-to-Ambientb, f °C/W RthJC Steady State Maximum Junction-to-Case (Drain) 1.6 2.0 Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 65 °C/W. Document Number: 65934 S10-2684-Rev. B, 22-Nov-10 www.vishay.com 1 SiR876DP Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 100 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs 47 ID = 250 µA VGS(th) Temperature Coefficient V mV/°C - 5.6 2.8 V VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V 1.2 30 µA A VGS = 10 V, ID = 20 A 0.0087 0.0108 VGS = 7.5 V, ID = 15 A 0.0092 0.0114 VGS = 4.5 V, ID = 10 A 0.0115 0.0145 VDS = 10 V, ID = 20 A 57 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 1640 VDS = 50 V, VGS = 0 V, f = 1 MHz pF 60 VDS = 50 V, VGS = 10 V, ID = 10 A 31.8 48 VDS = 50 V, VGS = 7.5 V, ID = 10 A 25 37.5 16.9 25.5 nC 3.6 7.2 Ω 11 22 9 18 VDS = 50 V, VGS = 4.5 V, ID = 10 A 4.8 7.9 f = 1 MHz td(on) tr 960 VDD = 50 V, RL = 5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 0.8 36 70 tf 11 22 td(on) 12 24 td(off) tr td(off) VDD = 50 V, RL = 5 Ω ID ≅ 10 A, VGEN = 7.5 V, Rg = 1 Ω tf 14 28 35 70 10 20 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 40 80 IS = 4 A IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.76 1.1 V 52 100 ns 65 120 nC 22 30 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65934 S10-2684-Rev. B, 22-Nov-10 SiR876DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 10 VGS = 10 V thru 5 V 8 VGS = 4 V ID - Drain Current (A) ID - Drain Current (A) 64 48 32 6 TC = 25 °C 4 TC = - 55 °C 16 TC = 125 °C 2 VGS = 3 V 0 0 0.5 1.0 1.5 2.0 0 2.5 0 2 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.016 5 3000 0.014 2400 VGS = 4.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1 VDS - Drain-to-Source Voltage (V) 0.012 VGS = 7.5 V 0.010 VGS = 10 V 0.008 Ciss 1800 1200 Coss 600 Crss 0.006 0 16 32 48 64 0 80 0 40 60 80 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 100 2.0 10 ID = 10 A ID = 20 A 1.7 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 20 ID - Drain Current (A) VDS = 25 V 6 VDS = 50 V 4 VDS = 75 V VGS = 10 V 1.4 VGS = 4.5 V 1.1 0.8 2 0 0 7 Document Number: 65934 S10-2684-Rev. B, 22-Nov-10 14 21 28 35 0.5 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 www.vishay.com 3 SiR876DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.060 ID = 20 A 0.048 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.036 0.024 TJ = 125 °C 0.012 TJ = 25 °C 0.001 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 3 4 5 6 7 8 9 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 10 200 0.2 160 0.0 Power (W) VGS(th) - Variance (V) 1 VSD - Source-to-Drain Voltage (V) ID = 5 mA - 0.2 80 ID = 250 μA - 0.4 40 - 0.6 - 0.8 - 50 120 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 TJ - Junction Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 100 Limited by RDS(on)* ID - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 0.1 10 s TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 10 DC 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 65934 S10-2684-Rev. B, 22-Nov-10 SiR876DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 ID - Drain Current (A) 48 Package Limited 36 24 12 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 75 2.5 60 2.0 45 1.5 Power (W) Power (W) Current Derating* 30 15 1.0 0.5 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65934 S10-2684-Rev. B, 22-Nov-10 www.vishay.com 5 SiR876DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 t1 t2 2. Per Unit Base = RthJA = 65 °C/W 1. Duty Cycle, D = 0.02 (t) 3. TJM - TA = PDMZthJA Single Pulse 0.01 10-4 10-3 10-2 4. Surface Mounted 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65934. www.vishay.com 6 Document Number: 65934 S10-2684-Rev. 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