SIR880BDP-T1-RE3

SiR880BDP www.vishay.com Vishay Siliconix N-Channel 80 V (D-S) MOSFET FEATURES PowerPAK® SO-8 Single D 5 D 6 D 7 • TrenchFET® Gen IV power MOSFET D 8 • Very low RDS - Qg figure-of-merit (FOM) • Tuned for the lowest RDS - Qoss FOM • 100 % Rg and UIS tested 6. 15 m m m 1 5m 5.1 Top View 3 4 S G Bottom View 2 S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 S APPLICATIONS PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration D • Synchronous rectification • Primary side switch 80 0.0065 0.0080 19.5 70.6 Single • DC/DC converters G • OR-ing • Power supplies S • Motor drive control • Battery and load switch N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SO-8 SIR880BDP-T1-RE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c PD TJ, Tstg LIMIT 80 ± 20 70.6 56.5 18.6 b, c 15 b, c 200 64.9 a 4.5 b, c 30 45 71.4 45.7 5 b, c 3.2 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b t ≤ 10 s RthJA 20 25 °C/W 1.4 1.75 Maximum junction-to-case (drain) Steady state RthJC Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 70 °C/W g. TC = 25 °C S21-0022-Rev. A, 18-Jan-2021 Document Number: 63031 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR880BDP www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 80 - - ΔVDS/TJ ID = 10 mA - 65 - VGS(th) temperature coefficient ΔVGS(th)/TJ ID = 250 μA - -5.0 - Gate-source threshold voltage VDS temperature coefficient mV/°C VGS(th) VDS = VGS, ID = 250 μA 1 - 2.4 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 80 V, VGS = 0 V - - 1 VDS = 80 V, VGS = 0 V, TJ = 70 °C - - 15 VDS ≥ 10 V, VGS =10 V 40 - - VGS = 10 V, ID = 10 A - 0.0053 0.0065 VGS = 4.5 V, ID = 10 A - 0.0062 0.0080 VDS = 15 V, ID = 10 A - 49 - - 2930 - - 280 - - 11.5 - μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg VDS = 40 V, VGS = 0 V, f = 1 MHz VDS = 40 V, VGS = 10 V, ID = 10 A VDS = 40 V, VGS = 4.5 V, ID = 10 A - 43.5 66 - 19.5 30 - 9.4 - - 4.0 - Gate-source charge Qgs Gate-drain charge Qgd Output charge Qoss VDS = 40 V, VGS = 0 V - 35.4 - Rg f = 1 MHz 0.3 0.80 1.4 - 12 24 - 7 14 - 40 80 tf - 9 18 td(on) - 28 56 - 73 146 - 39 78 - 12 24 Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tr td(off) VDD = 40 V, RL = 4 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω VDD = 40 V, RL = 4 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω tf pF nC Ω ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 5 A, VGS = 0 V IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C - - 64.9 - - 200 - 0.74 1.1 - 38 76 ns - 52 104 nC - 28 - - 10 - A V ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0022-Rev. A, 18-Jan-2021 Document Number: 63031 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR880BDP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 180 10000 100 VGS = 10 V thru 4 V 144 100 1000 108 1st line 2nd line VGS = 3 V 40 2nd line ID - Drain Current (A) 1000 60 1st line 2nd line 2nd line ID - Drain Current (A) 80 72 100 TC = 25 °C 36 20 VGS = 2 V thru 0V 0 1 2 3 4 TC = -55 °C TC = 125 °C 10 0 10 0 0 5 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title Axis Title 10000 0.0070 10000 10 000 0.0058 100 1000 1000 1st line 2nd line 1000 0.0062 2nd line C - Capacitance (pF) VGS = 4.5 V 1st line 2nd line 2nd line ( ) RDS(on) - On-Resistance Ciss 0.0066 Coss 100 100 VGS = 10 V 0.0054 Crss 0 20 40 60 80 10 10 10 0.0050 0 100 16 32 64 80 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title Axis Title 10000 2nd line 1st line 2nd line 6 1000 VDS =20 V, 40 V, 60 V 4 100 2 10 0 0 9 18 27 36 45 2.0 VGS = 10 V, 10 A 1000 1.6 1st line 2nd line ID = 10 A 8 10000 2.4 2nd line RDS(on) - On-Resistance (Normalized) 10 2nd line VGS - Gate-to-Source Voltage (V) 48 1.2 100 VGS = 4.5 V, 10 A 0.8 10 0.4 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S21-0022-Rev. A, 18-Jan-2021 Document Number: 63031 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR880BDP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 0.4 10000 100 TJ = 150 °C 1 TJ = 25 °C 100 0.1 1000 0 1st line 2nd line 2nd line VGS(th) - Variance (V) 1000 1st line 2nd line 2nd line IS - Source Current (A) 0.2 10 ID = 5 mA -0.2 100 -0.4 ID = 250 μA -0.6 0.01 10 0 0.2 0.4 0.6 0.8 1.0 10 -0.8 1.2 -50 -25 0 25 50 75 100 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage Axis Title 125 150 Axis Title 10000 0.03 10000 300 240 TJ = 125 °C 0.012 100 1000 180 1st line 2nd line 2nd line P - Power (W) 1000 0.018 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) ID = 10 A 0.024 120 100 0.006 60 TJ = 25 °C 10 0 0 2 4 6 8 10 0 0.001 10 0.01 0.1 1 10 VGS - Gate-to-Source Voltage (V) t - Time (s) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Axis Title 10000 1000 IDM limited ID limited 100 μs 1000 10 1 ms 1 Limited by RDS(on) a 10 ms 1st line 2nd line 2nd line ID - Drain Current (A) 100 100 100 ms 1s 0.1 10s TA = 25 °C, single pulse 0.01 0.01 BVDSS limited DC 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Note a. VGS > minimum VGS at which RDS(on) is specified S21-0022-Rev. A, 18-Jan-2021 Document Number: 63031 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR880BDP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 80 1000 48 1st line 2nd line 2nd line ID - Drain Current (A) 64 32 100 16 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating a Axis Title Axis Title 10000 90 72 36 100 18 1000 1.5 1st line 2nd line 1000 54 2nd line P - Power (W) 2.0 1st line 2nd line 2nd line P - Power (W) 10000 2.5 1.0 100 0.5 10 0 0 25 50 75 100 125 150 10 0 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S21-0022-Rev. A, 18-Jan-2021 Document Number: 63031 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiR880BDP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 Duty cycle = 0.5 Notes 0.2 PDM 0.1 0.1 t1 0.05 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 70 °C/W 0.02 3. TJM - TA = PDMZthJA Single pulse 0.01 0.0001 0.001 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.01 100 (t) 4. Surface mounted 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 0.2 0.1 1000 0.05 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.02 Single pulse 100 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63031. S21-0022-Rev. A, 18-Jan-2021 Document Number: 63031 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8, (Single/Dual) L H E2 K E4 θ D4 W 1 M 1 Z 2 D5 D2 e 2 D1 D 2 D 3 4 θ 4 b 3 L1 E3 θ A1 Backside View of Single Pad H K E2 E4 L 1 D1 D5 2 D2 Detail Z K1 2 E1 E D3 (2x) D4 c A θ 3 4 Notes 1. Inch will govern. 2 Dimensions exclusive of mold gate burrs. 3. Dimensions exclusive of mold flash and cutting burrs. DIM. A A1 b c D D1 D2 D3 D4 D5 E E1 E2 E3 E4 e K K1 H L L1  W M b D2 E3 Backside View of Dual Pad MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. 0.97 1.04 0.41 0.28 5.15 4.90 3.76 1.50 0.57 typ. 3.98 typ. 6.15 5.89 3.66 3.78 0.75 typ. 1.27 BSC 1.27 typ. 0.61 0.61 0.13 0.25 0.125 typ. 1.12 0.05 0.51 0.33 5.26 5.00 3.91 1.68 0.038 0 0.013 0.009 0.199 0.189 0.140 0.052 0.044 0.002 0.020 0.013 0.207 0.197 0.154 0.066 6.25 5.99 3.84 3.91 0.238 0.228 0.137 0.145 0.71 0.71 0.20 12° 0.36 0.022 0.020 0.020 0.002 0° 0.006 0.041 0.016 0.011 0.203 0.193 0.148 0.059 0.0225 typ. 0.157 typ. 0.242 0.232 0.144 0.149 0.030 typ. 0.050 BSC 0.050 typ. 0.024 0.024 0.005 0.010 0.005 typ. 0.33 0.23 5.05 4.80 3.56 1.32 6.05 5.79 3.48 3.68 0.56 0.51 0.51 0.06 0° 0.15 0.246 0.236 0.151 0.154 0.028 0.028 0.008 12° 0.014 ECN: S17-0173-Rev. L, 13-Feb-17 DWG: 5881 Revison: 13-Feb-17 1 Document Number: 71655 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72599 Revision: 21-Jan-08 www.vishay.com 15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000