SIR888DP-T1-GE3

New Product SiR888DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 a RDS(on) (Ω) ID (A) 0.00325 at VGS = 10 V 40g 0.0040 at VGS = 4.5 V 40g Qg (Typ.) 35.5 nC • • • • Halogen-free TrenchFET® Power MOSFET 100 % Rg Tested 100 % Avalanche Tested RoHS COMPLIANT APPLICATIONS PowerPAK SO-8 • Low-Side Switch in Synchronous Buck Converter S 6.15 mm D 5.15 mm 1 S 2 S 3 G 4 D 8 G D 7 D 6 D 5 Bottom View S Ordering Information: SIR888DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg Limit 25 ± 16 40g 40g 29b, c 23b, c 70 40g 4.5b, c 40 80 48 31 5.0b, c 3.2b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA t ≤ 10 s 20 25 Maximum Junction-to-Ambientb, f °C/W RthJC 2.1 2.6 Maximum Junction-to-Case (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 70 °C/W. g. Package limited. Document Number: 68627 S-81010-Rev. A, 05-May-08 www.vishay.com 1 New Product SiR888DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 25 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 16 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Forward Transconductancea gfs V 26 mV/°C - 5.6 0.8 2.2 V ± 100 nA VDS = 25 V, VGS = 0 V 1 VDS = 25 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V 30 µA A VGS = 10 V, ID = 15 A 0.0025 0.00325 VGS = 4.5 V, ID = 10 A 0.0031 0.004 VDS = 15 V, ID = 15 A 97 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 5065 VDS = 15 V, VGS = 0 V, f = 1 MHz 295 VDS = 15 V, VGS = 10 V, ID = 20 A VDS = 15 V, VGS = 4.5 V, ID = 20 A tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 0.2 0.55 1.1 32 55 14 25 70 11 20 td(on) 15 30 10 20 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf Fall Time 55 12 tf td(off) Turn-Off Delay Time 120 40 tr Rise Time 78 35.5 nC 8.1 f = 1 MHz td(on) Turn-On Delay Time pF 655 40 70 9 18 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 40 ISM VSD 70 IS = 2.7 A 0.78 1.1 A V Body Diode Reverse Recovery Time trr 36 65 ns Body Diode Reverse Recovery Charge Qrr 36 60 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 19 17 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68627 S-81010-Rev. A, 05-May-08 New Product SiR888DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 70 2.0 VGS = 10 thru 3 V 1.6 ID - DrainCurrent (A) ID - Drain Current (A) 56 42 28 14 1.2 0.8 TC = 125 °C 0.4 TC = 25 °C VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 TC = - 55 °C 0.0 0.0 2.5 0.8 1.6 2.4 3.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4.0 6150 0.0040 0.0036 4920 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V 0.0032 VGS = 10 V 0.0028 3690 2460 Crss 0 0.0020 0 14 28 42 56 0 70 5 10 15 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 25 1.8 10 ID = 20 A VGS = 4.5 V ID = 15 A VDS = 10 V 8 1.6 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-SourceVoltage (V) Coss 1230 0.0024 VDS = 15 V 6 VDS = 20 V 4 2 1.4 1.2 VGS = 10 V 1.0 0.8 0 0 16 32 48 64 80 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 68627 S-81010-Rev. A, 05-May-08 150 www.vishay.com 3 New Product SiR888DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.015 100 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.012 0.009 0.006 TJ = 125 °C 0.003 TJ = 25 °C 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 200 0.2 160 Power (W) V GS(th) Variance (V) 0.001 0.0 - 0.1 ID = 5 mA - 0.4 10 120 80 ID = 250 µA - 0.7 40 - 1.0 0 - 50 - 25 0 25 50 75 100 125 150 0 .0 0 1 0.01 0.1 1 10 Time (s) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 I D - Drain Current (A) Limited by RDS(on)* 1 ms 10 10 ms 100 ms 1 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.01 BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 68627 S-81010-Rev. A, 05-May-08 New Product SiR888DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 ID - Drain Current (A) 80 60 Package Limited 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 60 2.5 48 2.0 Power (W) Power (W) Current Derating* 36 24 12 1.5 1.0 0.5 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68627 S-81010-Rev. A, 05-May-08 www.vishay.com 5 New Product SiR888DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70 °C/W 0.02 3. TJM -- TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68627. www.vishay.com 6 Document Number: 68627 S-81010-Rev. A, 05-May-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000