SIRA14BDP-T1-GE3

SiRA14BDP www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PowerPAK® SO-8 Single D 5 D 6 D 7 D 8 • TrenchFET® Gen IV power MOSFET • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 6. 15 m m 1 5 5.1 mm Top View 4 G Bottom View 3 S 2 S 1 S D • High power density DC/DC • Synchronous rectification PRODUCT SUMMARY VDS (V) APPLICATIONS • VRMs and embedded DC/DC G 30 RDS(on) max. () at VGS = 10 V 0.00538 RDS(on) max. () at VGS = 4.5 V 0.00702 Qg typ. (nC) 6.6 S ID (A) a 64 N-Channel MOSFET Configuration Single ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SO-8 SiRA14BDP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS Maximum power dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e TJ, Tstg LIMIT 30 +20, -16 64 52 21 b, c 16 b, c 130 33 3.3 b, c 15 11.3 36 23 3.7 b, c 2.4 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SMYBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b, f t  10 s RthJA 28 34 °C/W 2.7 3.5 Maximum junction-to-case (drain) Steady state RthJC Notes a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 72 °C/W S18-0993-Rev. A, 01-Oct-2018 Document Number: 76789 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiRA14BDP www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = 250 μA 30 - - VDSt VGS = 0 V, ID(aval) = 40 A, ttranscient  50 ns 36 - - - 15.2 - - -4.7 - UNIT Static Drain-source breakdown voltage Drain-source breakdown voltage (c) (transient) VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage ID = 250 μA V mV/°C VGS(th) VDS = VGS, ID = 250 μA 1.1 - 2.2 V Gate-source leakage IGSS VDS = 0 V, VGS = +20, -16 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a VDS = 30 V, VGS = 0 V - - 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C - - 10 VDS  5 V, VGS = 10 V 30 - - VGS = 10 V, ID = 10 A - 0.00370 0.00538 VGS = 4.5 V, ID = 8 A - 0.00540 0.00702 VDS = 10 V, ID = 20 A - 65 - - 917 - - 389 - - 37 - RDS(on) gfs μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VDS = 15 V, VGS = 0 V, f = 1 MHz Crss/Ciss ratio VDS = 15 V, VGS = 10 V, ID = 10 A - 0.04 0.08 - 14 22 - 6.6 10 - 2.93 - - 1.61 - Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Output charge Qoss VDS = 15 V, VGS = 0 V - 11 - Rg f = 1 MHz 0.6 2.8 5.6 - 10 20 - 5 10 - 16 30 tf - 5 10 td(on) - 15 30 - 30 60 - 17 35 - 10 20 Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 15 V, VGS = 4.5 V, ID = 10 A td(on) VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  tr td(off) tr td(off) VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current a ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 10 A IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C - - 33 - - 130 - 0.77 1.1 V - 20 40 ns - 7 20 nC - 10 - - 10 - A ns Notes a. Pulse test: pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Based on characterization, not subject to production testing   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-0993-Rev. A, 01-Oct-2018 Document Number: 76789 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiRA14BDP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 120 VGS = 10 V thru 4 V 100 100 20 0 1 1.5 2 2.5 TC = 25 °C 40 3 TC = 125 °C 1 2 3 4 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title Axis Title 1500 10000 10000 1200 0.004 100 VGS = 10 V 0.002 Ciss 1000 900 1st line 2nd line 1000 VGS = 4.5 V 0.006 2nd line C - Capacitance (pF) 0.008 1st line 2nd line 600 Coss 100 300 Crss 0 10 0 20 40 60 80 100 0 120 10 0 5 10 20 25 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance Axis Title 1.6 VDS = 15 V 8 1000 6 4 1st line 2nd line VDS = 10 V VDS = 20 V 100 2 0 10 3 6 9 12 15 2nd line RDS(on) - On-Resistance (Normalized) 10000 ID = 10 A 30 Axis Title 10 0 15 10000 ID = 10 A VGS = 10 V 1.4 1000 1.2 VGS = 4.5 V 1.0 100 0.8 0.6 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S18-0993-Rev. A, 01-Oct-2018 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) TC = -55 °C 10 0 0.010 2nd line VGS - Gate-to-Source Voltage (V) 100 0 10 0.5 60 20 VGS = 3 V 0 1000 80 1st line 2nd line 40 2nd line ID - Drain Current (A) 1000 60 1st line 2nd line 2nd line ID - Drain Current (A) 80 Document Number: 76789 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiRA14BDP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 ID = 10 A 1st line 2nd line 1000 TJ = 25 °C 1 100 0.025 1000 0.02 1st line 2nd line 10 2nd line RDS(on) - On-Resistance (Ω) TJ = 150 °C 2nd line IS - Source Current (A) 10000 0.03 0.015 0.01 100 TJ = 125 °C 0.005 TJ = 25 °C 0.1 0 10 0 0.2 0.4 0.6 0.8 1.0 1.2 10 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 10000 2.0 10000 200 1.8 150 1000 1.4 1.2 1st line 2nd line 1000 2nd line Power (W) ID = 250 μA 1st line 2nd line VGS(th) (V) 1.6 100 100 100 50 1.0 0.8 0 0.0001 0.001 0.01 10 -50 -25 0 25 50 75 100 125 150 0.1 TJ - Temperature (°C) 2nd line 1 10 100 10 1000 Time (s) 2nd line Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 1000 Limited by RDS(on) (1) 10000 ID(ON) Limited 1000 10 100 μs 1 ms 10 ms 100 ms100 1s 10 s DC 1 0.1 TA = 25 °C Single pulse 0.01 0.01 (1) 1st line 2nd line 2nd line ID - Drain Current (A) 100 IDM Limited BVdss Limited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area S18-0993-Rev. A, 01-Oct-2018 Document Number: 76789 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiRA14BDP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 90 50 10000 40 60 1000 45 30 30 1st line 2nd line 2nd line Power (W) 2nd line ID - Drain Current (A) 75 20 100 15 10 0 0 25 50 75 100 TC - Case Temperature (°C) 2nd line Current Derating a 125 150 0 10 0 25 50 75 100 125 150 TC - Case Temperature (°C) 2nd line Power, Junction-to-Case Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S18-0993-Rev. A, 01-Oct-2018 Document Number: 76789 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiRA14BDP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 Notes 0.2 1000 PDM 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.1 t1 0.05 t2 t1 t2 2. Per unit base = RthJA = 72 °C/W 1. Duty cycle, D = 0.02 3. TJM - TA = PDMZthJA 0.001 (t) 4. Surface mounted Single pulse 0.01 0.0001 100 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty Cycle = 0.5 1000 0.2 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.1 0.05 100 0.02 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76789. S18-0993-Rev. A, 01-Oct-2018 Document Number: 76789 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8, (Single/Dual) L H E2 K E4 θ D4 W 1 M 1 Z 2 D5 D2 e 2 D1 D 2 D 3 4 θ 4 b 3 L1 E3 θ A1 Backside View of Single Pad H K E2 E4 L 1 D1 D5 2 D2 Detail Z K1 2 E1 E D3 (2x) D4 c A θ 3 4 Notes 1. Inch will govern. 2 Dimensions exclusive of mold gate burrs. 3. Dimensions exclusive of mold flash and cutting burrs. DIM. A A1 b c D D1 D2 D3 D4 D5 E E1 E2 E3 E4 e K K1 H L L1  W M b D2 E3 Backside View of Dual Pad MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. 0.97 1.04 0.41 0.28 5.15 4.90 3.76 1.50 0.57 typ. 3.98 typ. 6.15 5.89 3.66 3.78 0.75 typ. 1.27 BSC 1.27 typ. 0.61 0.61 0.13 0.25 0.125 typ. 1.12 0.05 0.51 0.33 5.26 5.00 3.91 1.68 0.038 0 0.013 0.009 0.199 0.189 0.140 0.052 0.044 0.002 0.020 0.013 0.207 0.197 0.154 0.066 6.25 5.99 3.84 3.91 0.238 0.228 0.137 0.145 0.71 0.71 0.20 12° 0.36 0.022 0.020 0.020 0.002 0° 0.006 0.041 0.016 0.011 0.203 0.193 0.148 0.059 0.0225 typ. 0.157 typ. 0.242 0.232 0.144 0.149 0.030 typ. 0.050 BSC 0.050 typ. 0.024 0.024 0.005 0.010 0.005 typ. 0.33 0.23 5.05 4.80 3.56 1.32 6.05 5.79 3.48 3.68 0.56 0.51 0.51 0.06 0° 0.15 0.246 0.236 0.151 0.154 0.028 0.028 0.008 12° 0.014 ECN: S17-0173-Rev. L, 13-Feb-17 DWG: 5881 Revison: 13-Feb-17 1 Document Number: 71655 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72599 Revision: 21-Jan-08 www.vishay.com 15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000